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yes / Interface definition is an essential and integral part of systems engineering. In current practice, interface requirements or control documents are generally used to define systems or subsystems interfaces. One of the challenges with the use of such documents in product development process is the diversity in their types, methodology, contents coverage, and structure across various design levels and across multidisciplinary teams, which often impedes the design process. It is important that interface information is described with appropriate detail and minimal or no ambiguity at each design level. The purpose of this paper is to present an interface analysis template (IAT) as a structured tool and coherent methodology, built upon a critical review of existing literature concepts, with the aim of using and implementing the same template for capturing interface requirements at various levels of design starting from stakeholders' level down to component level analysis. The proposed IAT is illustrated through a desktop case study of an electric pencil sharpener, and two examples of application to automotive systems.

yes / This paper presents a structured approach for systems requirements analysis that integrates use case modelling with a coherent flows based approach for describing interface exchanges based on the Interface Analysis Template. The approach is discussed in the context of current frameworks for requirements elicitation from the engineering design and systems engineering domains, and it is illustrated with an automotive case study. This illustrates the strength of the framework to support structured multi-domain and multi-disciplinary analysis of requirements for complex systems.

This thesis presents the development and validation of a novel interface modelling methodology integrated with a system architectural analysis framework that emphasises the need to manage the integrity of deriving and allocating requirements across multiple levels of abstraction in a structured manner. The state of the art review in this research shows that there is no shared or complete interface definition model that could integrate diverse interaction viewpoints for defining system requirements with complete information. Furthermore, while existing system modelling approaches define system architecture with functions and their allocation to subsystems to meet system requirements, they do not robustly address the importance of considering well-defined interfaces in an integrated manner at each level of systems hierarchy. This results in decomposition and integration issues across the multiple levels of systems hierarchy. Therefore, this thesis develops and validates following: -Interface Analysis Template as a systematic tool that integrates diverse interaction viewpoints for modelling system interfaces with intensive information for deriving requirements. -Coupling Matrix as an architecture analysis framework that not only allocates functions to subsystems to meet requirements but also promotes consistent consideration of well-defined interfaces at each level of design hierarchy. Insights from the validation of developed approach with engineering case studies within an automotive OEM are discussed, reflecting on the effectiveness, efficiency and usability of the methods.

Ce travail de thèse a consisté à améliorer certaines propriétés de revêtements fonctionnels à base de polychlorure de vinyle (PVC) plastifié et de polyamide-imide (PAI) par incorporation de nanocharges inorganiques préformées, lamellaires ou divisées. La compatibilisation des nanocharges avec la matrice dans laquelle elles ont été incorporées s’est avérée indispensable pour obtenir des films nanocomposites avec une distribution homogène et un état de dispersion le plus fin possible. Différentes stratégies de compatibilisation ont été étudiées, comme la physisorption, la chimisorption, l’intercalation ou encore la chélation d’agents compatibilisants judicieusement choisis et adaptés à chacun des systèmes. Les nouvelles nanocharges ainsi modifiées ont été caractérisées en vue de leur introduction dans la matrice. Les films nanocomposites « compatibilisés » ont été élaborés en voie solvant et/ou par polymérisation in-situ, suivie d’une gélification physique pour le PVC ou d’une réticulation chimique pour le PAI. La caractérisation morphologique des films, réalisée par DRX et MEB/MET, ainsi que les propriétés thermiques et thermomécaniques des films, évaluées par ATG, DSC et DMA, mettent en évidence l’importance de deux paramètres : la chimie de surface des nanocharges, à l’origine des interactions interfaciales nanocharge/polymère, et le procédé d’élaboration du nanocomposite. / This study aims at improving some properties of functional PVC- and PAI- based coatings by adding preformed inorganic lamellar or spherical nanofillers. The compatibilization of nanofiller with the polymer matrix in which they are introduced, is required in order to obtain nanocomposite films with an homogeneous distribution and a dispersion state as fine as possible. Different compatibilization strategies, well-suited for each system, have been studied: compatibilizer physisorption, chemisorption, intercalation or chelation. The new modified nanofillers have been characterized before their introduction into the matrix. Various strategies have been considered to obtain the “compatibilized” nanocomposite films such as the solution mixing and/or the in-situ polymerization, followed by a physical gelation or curing step for PVC- or PAI-based nanocomposites, respectively. The morphological characterization of the films, through XRD and SEM/TEM analysis, and the thermal and thermomecanical properties, evaluated by TGA, DSC and DMA, underlined the importance of two parameters: the nanofiller surface chemistry, responsible for the nanofiller/polymer interfacial interactions, and the elaboration process of the nanocomposite.

Since there is a continuous shrinking of feature sizes in ultra-large scale integrated (ULSI) circuits, requirements on materials and technology are going to rise dramatically in the near future. In particular, at the interconnect system this calls for new concepts and materials. Therefore, carbon nanotubes (CNTs) are considered as a promising material to replace partly or entirely metal interconnects in such devices. The present thesis aims to make a contribution to the CNT growth control with the thermal chemical vapor deposition (CVD) method and the integration of CNTs as vertical interconnects (vias) in ULSI circuits. Different support/catalyst systems are examined in processes for catalyst pretreatment and CNT growth. The investigations focus on the catalyst formation and the interactions at the interfaces. Those effects are related to the CNT growth. To get an insight into interactions at interfaces, film structure, composition, and CNT growth characteristics, samples are extensively characterized by techniques like AFM, SEM, TEM, XRD, XPS, and Raman spectroscopy. Screening studies on nanoparticle formation and CNT growth with the well known system SiO2/Ni are presented. This system is characterized by a weak support/catalyst interaction, which leads to undirected growth of multi-walled CNTs (MWCNTs). By contrast, at the Ta/Ni system a strong interaction causes a wetting of catalyst nanoparticles and vertically aligned MWCNT growth. At the system W/Ni a strong interaction at the interface is found as well, but there it induces Stranski-Krastanov catalyst film reformation upon pretreatment and complete CNT growth inhibition. Studies on the SiO2/Cr/Ni system reveal that Cr and Ni act as a bi-catalyst system, which leads to a novel nanostructure defined as interlayer CNT (ICNT) structure. The ICNT films are characterized by well crystallized vertically aligned MWCNTs, which grow out a Cr/Ni layer lifted off as a continuous and very smooth layer from the substrate with the growth. Besides, this nanostructure offers new possibilities for the integration of CNTs in different electronic applications. Based on the presented possibilities of manipulating CNT growth, an integration technology was derived to fabricate CNT vias. The technology uses a surface mediated site-selective CVD for the growth of MWCNTs in via structures. Developments are demonstrated with the fabrication of via test vehicles and the site-selective growth of MWCNTs in vias on 4 inch wafers. Furthermore, the known resistance problem of CNT vias, caused by too low CNT density, is addressed by a new approach. A CNT/metal heterostructure is considered, where the metal is implemented through atomic layer deposition (ALD). The first results of the coating of CNTs with readily reducible copper oxide nanoparticles are presented and discussed. / Aufgrund der kontinuierlichen Verkleinerung von Strukturen in extrem hoch integrierten (engl. Ultra-Large Scale Integration − ULSI) Schaltkreisen werden die Anforderungen an die Materialien und die Technologie in naher Zukunft dramatisch ansteigen. Besonders im Leitbahnsystem sind neue Materialien und Konzepte gefragt. Kohlenstoffnanoröhren (engl. Carbon Nanotubes − CNT) stellen hierbei ein vielversprechendes Material dar, um teilweise oder sogar vollständig metallische Leitbahnen zu ersetzen. Die vorliegende Arbeit liefert einen Beitrag zur CNT-Wachstumskontrolle mit der thermischen Gasphasenabscheidung (engl. Chemical Vapor Deposition − CVD) sowie der Integration von CNTs als vertikale Leitungsverbindungen (Via) in ULSI-Schaltkreisen. Verschiedene Untergrund/Katalysator-Systeme werden in Prozessen zur Katalysatorvorbehandlung sowie zum CNT-Wachstum betrachtet. Die Untersuchungen richten sich insbesondere auf die Katalysatorformierung und die Wechselwirkungen an den Grenzflächen. Diese werden mit dem CNT-Wachstum in Verbindung gebracht. Für Untersuchungen von Grenzflächeninteraktionen, Schichtstruktur, Zusammensetzung sowie CNT-Wachstumscharakteristik werden Analysen mit AFM, REM, TEM, XRD, XPS und Raman-Spektroskopie genutzt. Zunächst werden Voruntersuchungen an dem gut bekannten System SiO2/Ni zur Nanopartikelformierung und CNTWachstum vorgestellt. Dieses System ist gekennzeichnet durch eine schwache Wechselwirkung zwischen Untergrund und Katalysator sowie ungerichtetem Wachstum von mehrwandigen CNTs (MWCNTs). Im Gegensatz dazu hat bei dem System Ta/Ni eine starke Interaktion an der Grenzfläche eine Katalysatornanopartikelbenetzung und vertikales MWCNT-Wachstum zur Folge. Für das W/Ni-System gelten ebenfalls starke Interaktionen an der Grenzfläche. Bei diesem System wird allerdings eine Stranski-Krastanov-Schichtformierung des Katalysators und eine vollständige Unterbindung von CNT-Wachstum erreicht. Bei dem System SiO2/Cr/Ni agieren Cr und Ni als Bi- Katalysatorsystem. Dies führt zu einer neuartigen Nanostruktur, die als Zwischenschicht-CNT (engl. Interlayer Carbon Nanotubes − ICNTs) Struktur definiert wird. Die Schichten sind durch eine gute Qualität von gerichteten MWCNTs charakterisiert, die aus einer geschlossenen, sehr glatten und von den CNTs getragenen Cr/Ni-Schicht herauswachsen. Darüber hinaus bietet die Struktur neue Möglichkeiten für die Integration von CNTs in verschiedene elektronische Anwendungen. Auf der Grundlage der vorgestellten Manipulationsmöglichkeiten von CNT-Wachstum wurde eine Integrationstechnologie für CNTs in Vias abgeleitet. Der Ansatz ist eine oberflächeninduzierte selektive CVD von vertikal gerichteten MWCNTs in Via-Strukturen. Diese Technologie wird mit der Herstellung von einem Via-Testvehikel und dem selektiven CNT-Wachstum in Vias auf 4 Zoll Wafern demonstriert. Um das Widerstandsproblem von CNT-Vias, verursacht durch eine zu niedrige CNT-Dichte, zu reduzieren, wird eine Technologieerweiterung vorgeschlagen. Der Ansatz geht von einer CNT/Metall-Heterostruktur aus, bei der das Metall mit Hilfe der Atomlagenabscheidung (engl. Atomic Layer Deposition − ALD) implementiert wird. Es werden erste Ergebnisse zur CNT-Beschichtung mit reduzierbaren Kupferoxidnanopartikeln vorgestellt und diskutiert.