京都大学 / 新制・課程博士 / 博士(理学) / 甲第23457号 / 理博第4751号 / 新制||理||1681(附属図書館) / 京都大学大学院理学研究科化学専攻 / (主査)准教授 前里 光彦, 教授 北川 宏, 教授 竹腰 清乃理 / 学位規則第4条第1項該当 / Doctor of Science / Kyoto University / DGAM

Proton-Exchange Membrane Fuel Cells are an alternative source of electricity generation for automobiles and stationary power plants. With increasing concerns on environmental issues, recent research has focused on maximizing the efficiency and durability as well as minimizing the costs of fuel cells. One of the main areas of research is optimizing the structure of the cathode catalyst layer. The main driving force of this thesis was the effective visualization of nanostructure of the ionomer, which is responsible for proton conduction in the cathode catalyst layer. However, challenges regarding sample preparation and radiation damage still need to be well understood. Different sample preparation techniques of catalyst inks and catalyst coated membranes were used for Scanning and Transmission Electron Microscopy, such as freeze fracturing, ultramicrotomy and Focused Ion Beam. Comparisons of the microstructure and chemical differences of all components, especially the ionomer, prepared by ultramicrotomy and Focused Ion Beam, was done with Transmission Electron Microscopy and Scanning Transmission X-ray Microscopy applied to the same catalyst coated membrane sample. Detailed spectroscopic information regarding components in both specimens was compared with C 1s and F 1s near edge X-ray absorption spectra recorded in a Scanning Transmission X-ray Microscope. Focused Ion Beam causes extensive damage to the carbon support and ionomer but prepares thinner sections than ultramicrotomy. This work makes it possible to understand the limitations of each sample preparation and compositional analysis technique in order to later apply one of them to image the ionomer in the catalyst layer at the nanoscale, hopefully using tomography techniques. / Thesis / Master of Materials Science and Engineering (MMatSE)

Vanadium dioxide (VO_2) is a material of particular interest due to its exhibited metal to insulator phase transition at 68°C that is accompanied by an abrupt and significant change in its electronic and optical properties. Since this material can exhibit a reversible drop in resistivity of up to five orders of magnitude and a reversible drop in infrared optical transmission of up to 80%, this material holds promise in several technological applications. Solid phase crystallization of VO_2 thin films was obtained by a post-deposition annealing process of a VO_{x,x approx 2} amorphous film sputtered on an amorphous silicon dioxide (SiO_2) layer. Scanning electron microscopy (SEM) and electron-backscattered diffraction (EBSD) were utilized to study the morphology of the solid phase crystallization that resulted from this post-deposition annealing process. The annealing parameters ranged in temperature from 300°C up to 1000°C and in time from 5 minutes up to 12 hours. Depending on the annealing parameters, EBSD showed that this process yielded polycrystalline vanadium dioxide thin films, semi-continuous thin films, and films of isolated single-crystal particles. In addition to these films on SiO_2, other VO_2 thin films were deposited onto a-, c-, and r-cuts of sapphire and on TiO_2(001) heated single-crystal substrates by pulsed-laser deposition (PLD). The temperature of the substrates was kept at ~500°C during deposition. EBSD maps and orientation imaging microscopy were used to study the epitaxy and orientation of the VO_2 grains deposited on the single crystal substrates, as well as on the amorphous SiO_2 layer. The EBSD/OIM results showed that: 1) For all the sapphire substrates analyzed, there is a predominant family of crystallographic relationships wherein the rutile VO_2{001} planes tend to lie parallel to the sapphire's {10-10} and the rutile VO_2{100} planes lie parallel to the sapphire's {1-210} and {0001}. Furthermore, while this family of relationships accounts for the majority of the VO_2 grains observed, due to the sapphire substrate's geometry there were variations within these rules that changed the orientation of VO_2 grains with respect to the substrate's normal direction. 2) For the TiO_2, a substrate with a lower lattice mismatch, we observe the expected relationship where the rutile VO_2 [100], [110], and [001] crystal directions lie parallel to the TiO_2 substrate's [100], [110], and [001] crystal directions respectively. 3) For the amorphous SiO_2 layer, all VO_2 crystals that were measurable (those that grew to the thickness of the deposited film) had a preferred orientation with the the rutile VO_2[001] crystal direction tending to lie parallel to the plane of the specimen. The use of transmission electron microscopy (TEM) is presented as a tool for further characterization studies of this material and its applications. In this work TEM diffraction patterns taken from cross-sections of particles of the a- and r-cut sapphire substrates not only solidified the predominant family mentioned, but also helped lift the ambiguity present in the rutile VO_2{100} axes. Finally, a focused-ion beam technique for preparation of cross-sectional TEM samples of metallic thin films deposited on polymer substrates is demonstrated.

The electrostatic ion beam trap (EIBT) was designed by D. Zajfman during the previous decade. This ion trap combines many properties of the Fourier-transform ion cyclotron resonance (FTICR) mass analyzer and time-of-flight (TOF) mass analyzer. There are several advantages for the electrostatic ion beam trap. First, large mass-to-charge particles in an electrostatic field could be easier to analyze. Second, there is a folded flight path, which could make the mass analyzer smaller compared to conventional TOF mass analyzer. This principle of operation of this ion trap is analogous to an optical resonator. The ions are trapped in a voltage valley and oscillate between the two parallel sets of mirror electrodes with high voltages. In this thesis, I first describe a new type of miniaturized electrostatic ion beam trap mass analyzer that consists of two printed circuit boards (PCBs). The facing surfaces of these boards are imprinted with copper electrodes. The center of the boards is field free and at ground potential with ion mirrors and Einzel lenses on either side. A charge detector is attached to the center for recording the time-dependant motion of the ions in the field. The PCB-based EIBT design is easier to construct than the original EIBT mass analyzer. The electrostatic fields are optimized by adjusting the potential on the mirror electrodes as well as the geometry of the electrodes. Although nondestructive charge detection is much less sensitive for small ions, this detection is ideal for analysis of large ions. The planar electrostatic ion beam trap is inexpensive, small, and simple to operate. The PCB EIBT device was designed, built, and tested using metal samples such as copper and nickel. The electric field of the PCB EIBT is not the same as that of the original EIBT. Unfortunately, there were no ion signals captured in image charge detector. Another new type of miniaturized electrostatic ion beam trap was made by depositing electrodes onto Kapton film. Seven thin tin/copper traces (1 mm wide by 0.015 mm thick) were deposited onto each side of a flat, flexible circuit board substrate (Kapton film 0.15 mm thickness). The film was rolled to form a cylinder. The flexible EIBT is small (4.5 cm × 8 cm), and lightweight (~1 g). This device was tested using laser ablation of CsI. The CsI signals were detected by the charge detector, amplified and sent to the oscilloscope. Fourier transformation was used to convert the data to the frequency domain spectrum. The resolution of Cs+ is around 1000 (m/Δm) from initial flexible EIBT test. The mass accuracy of the Cs+ peak is better than 0.1%.

Since the discovery of carbon nanotubes (CNT) in 1999, they have attracted much attention due to their unique mechanical and electrical properties and potential applications. Yet their nanosize makes the study of individual CNTs easier said than done. In our laboratory, carbon fibers with nanotube cores have been synthesized with conventional chemical vapor deposition (CVD) method. The single multiwall carbon nanotube (MWNT) sticks out as a tip of the carbon fiber. In order to pick up the individual CNT tips, focused ion beam (FIB) technique is applied to cut and adhere the samples. The carbon fiber with nanotube tip was first adhered on a micro-manipulator with the FIB welding function. Afterwards, by applying the FIB milling function, the fiber was cut from the base. This enables us to handle the individual CNT tips conveniently. By the same method, we can attach the nanotube tip on any geometry of solid samples such as conventional atomic force microscopy (AFM) silicon tips. The procedures developed for the FIB assisted individual CNT tip fabrication will be described in detail. Because of their excellent electrical and stable chemical properties, individual CNTs are potential candidates as electron guns for electron based microscopes to produce highly coherent electron beams. Due to the flexibility of the FIB fabrication, the individual CNT tips can be easily fabricated on a sharpened clean tungsten wire for field emission (FE) experimentation. Another promising application for individual CNT tips is as AFM probes. The high aspect ratio and mechanical resilience make individual CNTs ideal for scanning probe microscopy (SPM) tips. Atomic force microscopy with nanotube tips allows us to image relatively deep features of the sample surface at near nanometer resolution. Characterization of AFM with individual CNT tips and field emission properties of single CNT emitters will be studied and presented.

No / The work presented in this paper contributes to a wider research objective aiming at gaining a better understanding of the injection moulding process at microscales. More specifically, it contributes to the development of a new modelling approach combining experimental observation and mathematical modelling to characterise thermal contact resistance that results from the imperfections present on the surfaces when two surfaces are brought in contact. Thus, this paper describes micro and nano structuring technologies (Focus Ion beam and Laser Ablation) used to structure sapphire inserts that are used as ”windows” in the injection moulding process, allowing thermal measurements with a high speed thermal camera whilst sapphire structures are filled with polymer melt. / The Engineering and Physical Sciences Research Council (EPSRC) under the grant EP/I014551/1 and the Interreg IVB project “ECOefficient LASER technology for FACTories of the future”.

Silicates analogous to cosmic dust were synthesized, modified, and analyzed utilizing ion-beam techniques with Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Silicate dust is a common constituent in interstellar space, with an estimated 50% of dust produced in the stellar winds of M class Asymptotic Giant Branch (AGB) stars. Silicate dust acts as a surface upon which other chemicals may form (water ice for example), increasing significance in the cosmochemistry field, as well as laboratory astrophysics. Silicate formation in the stellar winds of AGB stars was simulated in the laboratory environment. Three sequential ion implantations of Fe-, MgH2-, and O- with thermal annealing were used to synthesize a mixture appropriate to silicate dust in the surface layers of a p-type Si substrate. Post implantation He+ irradiation was shown to preferentially induce crystalline formation in the analogue prior to thermal annealing. This effect is believed to originate in the ion-electron interaction in the Si substrate. The effects of ionization and ion energy loss due to electronic stopping forces is believed to precipitate nucleation in the amorphous media. For annealing temperatures of 1273 K, predominant quartz formation was found in the substrate, whereas lower annealing temperatures of 1000 K formed enstatite without post-implantation He+ irradiation, and olivine with He+ irradiation. Post annealed crystalline phase modification was investigated via x-ray diffraction and elemental compositions were investigated utilizing RBS. Finally, the interdiffusion of Fe and Mg at temperatures of 900-1100 K was investigated with RBS, and activation energies for interdiffusion were extracted for the transition from amorphous to crystalline phase in the silicate analogues. Fe had an interdiffusion energy of 1.8 eV and Mg 1.5eV. The produced analogues have similar properties to those inferred from infrared spectroscopy of the stellar winds of M-class AGB stars with an oxygen-rich outflow. This work established a method of silicate production using ion beam modifications, explored He+ irradiation effects in the annealed structures, and derived interdiffusion activation energies for Fe and Mg in the amorphous structure. Grain sizes were <100 nm with the observed formation of quartz, enstatite, and olivine.

Silicon has been the fundamental material for most semiconductor devices. As Si devices continue to scale down, there is a growing need to gain a better understanding of the characteristics of Si-based nanostructures and to develop novel fabrication methods for devices with extremely small dimensions. Ion beam implantation as a ubiquitous industrial method is a promising candidate for introducing dopants into semiconductor devices. Although the interactions between ion beams and Si nanostructures have been studied for several decades, many questions still remain unanswered, especially when the size of the target structure and the interaction volume of the incident ion beam have similar extents. Recent studies have demonstrated different potential use cases of ion beam interactions with Si nanostructures, such as Si nanocrystals (SiNCs). One of them is to use SiNCs embedded in a SiO2 layer as the Coulomb blockade for a single electron transistor (SET) device. In this work, we demonstrate the ion beam synthesis of SiNCs, as well as other ion beam interactions with Si-based nanostructures. To build the basic structure of a room-temperature SET, both conventional broad-beam implantation and a focused Ne+ beam from a helium ion microscope (HIM) were used for ion beam mixing. Subsequent annealing using rapid thermal processing (RTP) triggered phase separation and Ostwald ripening, where small nucleated Si clusters merge to form larger ones with the lowest surface free energy. Various ion implantation parameters were tested, along with different conditions during the RTP treatment. The SiNC structures were examined with energy-filtered transmission electron microscopy (EFTEM) to determine the optimum fabrication conditions in terms of ion beam fluence and thermal budget for the RTP treatment. Due to their small size and the resulting quantum confinement, SiNCs also exhibited optical activity, which was confirmed by photoluminescence spectroscopy on both broad-beam irradiated blank wafers and vertical hybrid nanopillar structures with embedded SiNCs. By scanning a laser probe over the sample and integrating the signal close to the emission peak, 1 μm-wide micropads with embedded SiNCs could be spatially resolved and imaged, demonstrating a new method of patterning and visualizing the SiNC emission pattern. To integrate SiNCs into vertical nanopillars for the fabrication of the SET, a fundamental study was conducted on the interaction between ions and vertical Si nanopillars. It was discovered that irradiating vertical Si nanopillars with ion fluence up to 2×1016 cm−2 immediately caused amorphization and plastic deformation due to the ion hammering effect and the viscous flow of Si during the irradiation. However, amorphization could be avoided by heating the substrate to above 350 °C, which promotes dynamic annealing. Several factors, including substrate temperature, ion flux, and nanostructure geometry, determine whether ion irradiation causes amorphization. Furthermore, at sufficiently high substrate temperatures, increasing ion fluence gradually reduced the diameter of the nanopillars due to forward sputtering from ions on the sidewalls. With a fluence up to 8×1016 cm−2 from broad-beam Si+, the diameter of Si nanopillars could be reduced by 50% to approximately 11 nm. Similar experiments were conducted on vertical nano-fin structures, which were thinned down to about 16 nm with Ne+ irradiation from the HIM. However, electrical measurements with scanning spreading resistance microscopy (SSRM) showed that the spreading resistance of the fins increased, even at a lower fluence of 2×1016 cm−2, which was too high for subsequent device integration. Nevertheless, these findings contributed to achieving the CMOS-compatible manufacturability of room-temperature SET devices and furthered our understanding of the fundamentals of ion interactions with Si nanostructures.

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