La mission Darwin, un projet d'interférométrie spatiale initié par l'ESA, nécessite l'utilisation de filtres modaux fonctionnant dans la gamme spectrale [6-20 µm]. Dans le cadre de ce travail, nous proposons la réalisation de filtres modaux basés sur des guides d'onde « tout tellurures » obtenus par la méthode d'empilement et de gravure. L'originalité de ce travail réside dans le fait que les guides réalisés sont de grandes dimensions (couches épaisses et profondeurs de gravure importantes), pour satisfaire aux exigences du projet. La première étape a donc consisté à choisir une méthode de dépôt qui permette d'obtenir des couches épaisses. La co-évaporation thermique a ainsi été mise en place et les paramètres de dépôt optimisés. Des couches d'épaisseur pouvant atteindre 17 µm, de bonne qualité (adhérentes, amorphes, denses et homogènes), transparentes de 6 à 20 µm et d'indice de réfraction contrôlé ont pu être obtenues. La gravure physique réactive (RIE) de ces couches, en utilisant un mélange gazeux CHF3/O2/Ar, a constitué la deuxième partie de ce travail. L'obtention de marches de profondeur pouvant dépasser 10 µm, présentant des profils de gravure de qualité, a été démontrée. Les différents guides d'onde IR réalisés ont été caractérisés optiquement après préparation de leurs faces d'entrée et de sortie. L'observation d'un bon confinement de la lumière sur un banc de guidage à λ = 10,6 µm et l'obtention d'un taux de réjection de 10-3 sur un banc d'interférométrie annulante nous ont permis de confirmer que les guides d'onde à base de couches tellurures et réalisés par la méthode d'empilement et de gravure constituaient une solution de choix en tant que filtres modaux pour l'interférométrie spatiale. / The Darwin mission, an interferometric spatial project initiated by ESA, requires modal filters being able to work in the whole spectral range [6-20 µm]. In the framework of this work, we propose the realization of modal filters based on waveguides obtained by stacking and etching chalcogenide films. The originality of this work lies in the fact that the realized waveguides have large dimensions (thick films and deep etching), to satisfy the project requirements. The first step consisted in choosing the deposition method which allows obtaining thick films. The thermal co-evaporation was setting up and the deposition parameters were optimized. Films with thickness which can reach 17 µm, of good quality (adhesive, amorphous, dense and homogeneous), transparent from 6 to 20 µm and with controlled refractive index were obtained. The physical reactive etching of these films, by using a gas mixture CHF3/O2/Ar, constituted the second part of this work. The obtaining of deep rib which can exceed 10 µm, presenting etching profiles of good quality was demonstrated. The elaborated IR waveguides were optically characterized after preparation of their entrance and exit faces. The observation of light confinement on a guiding bench at λ = 10.6 µm and the obtaining of a rejection rate of 10-3 on a nulling interferometry bench allowed confirming that the waveguides based on the stacking and etching of telluride films was a choice solution as modal filters for the spatial interferometry.

This PhD dissertation reports the development of miniature ion optics components of a mass spectrometer (MS) with the ultimate goal to lay the foundation for a compact low-power micromachined MS (µMS) for broad-range chemical analysis. Miniaturization of two specific components a) RF ion traps and b) an ion funnel have been investigated and miniature low-power versions of these components have been developed and demonstrated successfully in lab experiments. Power savings, simpler electronics and packaging schemes required to operate the micro-scale RF cylindrical ion traps have been the key motivation driving this research. Microfabricated cylindrical ion traps (µCITs) and arrays in silicon, silicon-on-insulator and stainless steel substrates have been demonstrated and average power of as low as 55 mW for a low mass range (28 to 136 amu) and mass spectra with better than a unit-mass-resolution have been recorded. For the ion funnel miniaturization effort, simple assembly, small form factor and ease of integration have been emphasized. A simplification of the conventional 3D ion funnel design, called the planar ion funnel, has been developed in a single plate and has been tested to demonstrate ion funneling at medium vacuum levels (1E-5 Torr) using DC voltages and power less than 0.5 W. Miniaturization of these components also enables use of other novel ion optics components, packaging and integration, which will allow a new class of µMS architectures amenable for radical miniaturization.

No description available.

This thesis presents the optimization of deep reactive ion etching process (DRIE) to achieve high precision 3-dimensional integrated micro electro mechanical systems (MEMS) sensors with high aspect ratio structures. Two optimization processes have been performed to achieve 20 &amp / #956 / m depth for 1 &amp / #956 / m opening for a dissolved wafer process (DWP) and to achieve 100 &amp / #956 / m depth for 1 &amp / #956 / m opening for silicon-on-glass (SOG) process. A number of parameters affecting the etch rate and profile angle are investigated, including the step times, etch step pressure, platen power, and electrode temperature. Silicon etch samples are prepared and processed in METU-MET facilities to understand and optimize the DRIE process parameters that can be used for the production of MEMS gyroscopes and accelerometers. The etch samples for DWP are masked using a photoresist, Shipley S1813. After the optimization process, vertical trench profiles are achieved with minimum critical dimension loss for trench depths up to 20 &amp / #956 / m. Since the selectivity of the resist is not sufficient for 100 &amp / #956 / m deep trench etch process, silicon dioxide (SiO2) is used as the mask for this process. At the end of the optimization processes, more than 100 &amp / #956 / m depth for 1 &amp / #956 / m opening with almost vertical sidewalls are achieved. In summary, this study provides an extensive understanding of the DRIE process for successful implementations of integrated MEMS sensors.

No description available.

Diffractive zone-plate lenses are widely used as optics in high-resolution x-ray microscopes. The achievable resolution in such microscopes is presently not limited by the x-ray wavelength but by limitations in zone-plate nanofabrication. Thus, for the advance of high-resolution x-ray microscopy, progress in zone-plate nanofabrication methods are needed.   This Thesis describes the development of new nanofabrication processes for improved x-ray zone-plate optics. Cold development of the electron-beam resist ZEP7000 is applied to improve the resolution of soft x-ray Ni zone plates. The influence of developer temperature on resist contrast, resolution, and pattern quality is investigated. With an optimized process, Ni zone plates with outermost zone widths down to 13 nm are demonstrated. To enhance the diffraction efficiency of Ni zone plates, the concept of Ni-Ge zone plates is introduced. The applicability of Ni-Ge zone plates is first demonstrated in a proof-of-principle experiment, and then extended to cold-developed Ni zone plates with outermost zone widths down to 13 nm. For 15-nm Ni-Ge zone plates a diffraction efficiency of 4.3% at a wavelength of 2.88 nm is achieved, which is about twice the efficiency of state-of-the-art 15-nm Ni zone plates. To further increase both resolution and diffraction efficiency of soft x-ray zone plates, a novel fabrication process for W zone plates is developed. High resolution is provided by salty development of the inorganic electron-beam resist HSQ, and cryogenic RIE in a SF6 plasma is investigated for high-aspect-ratio W structuring. We demonstrate W zone plates with 12-nm outermost zone width and a W height of 90 nm, resulting in a 30% increase in theoretical diffraction efficiency compared to 13-nm efficiency-enhanced Ni-Ge zone plates. In addition to soft x-ray zone plates, some lenses for hard x-ray free-electron-laser applications were also fabricated during this Thesis work. Fabrication processes for the materials W, diamond, and Pt were developed. We demonstrate Pt and W-diamond zone plates with 100-nm outermost zone width and respective diffraction efficiencies of 8.2% and 14.5% at a photon energy of 8 keV. / QC 20111114

Dans le cadre de cette thèse, nous présentons un aperçu général des surfaces du silicium micro et nano structurées, appelées silicium noir (BSi), et obtenues par la gravure ionique réactive cryogénique (cryo-DRIE). Ces surfaces auto-générées peuvent être fabriquées dans un procédé en une seule étape fournissant de grandes surfaces à faible réflectivité sur une large gamme de longueurs d'onde et d'angles d'incidence. Nous examinons plusieurs aspects des surfaces du BSi, incluant les méthodes de fabrication, les applications, les méthodes de caractérisation de sa topographie, les techniques de modélisation pour les simulations optiques, et les mécanismes de croissance. Nous développons ensuite trois principales contributions que cette thèse apporte à l'état de l'art : une meilleure compréhension de la topographie du BSi, la modélisation de son comportement optique et un aperçu de ses mécanismes de formation. Nous développons une nouvelle technique de caractérisation topographique du BSi, utilisant un faisceau ionique localisé dans le plan de l'échantillon pour réaliser une nanotomographie qui reproduit les détails de structure avec une précision inférieure au micron. Nous présentons ensuite différentes méthodes de modélisation de cellules unitaires du BSi basées soit sur la topographie de la surface réelle obtenue, ou sur des formes géométriques équivalentes qui sont statistiquement représentatives de la topographie du BSi. Nous sommes capables d'obtenir une excellente concordance entre les simulations et les données expérimentales. Nous présentons également un modèle capable de simuler toute l'évolution de la surface du BSi allant d'un substrat plat jusqu'à sa topographie entièrement développée, en concordance avec des données obtenues expérimentalement. On produit un diagramme de phase qui saisit les combinaisons de paramètres responsables de la formation du BSi. Nous sommes en mesure de reproduire dans notre modèle, un certain nombre d'effets subtils qui mènent à la densification du motif observé, responsable de la formation du BSi pendant cryo-DRIE / In this thesis, we present a general overview of silicon micro and nanostructured surfaces, known as black silicon (BSi), fabricated with cryogenic deep reactive ion etching (cryo-DRIE). These self-generated surfaces can be fabricated in a single step procedure and provide large surfaces with reduced reflectance over a broad range of wavelengths and angles of incidence. We review several aspects of BSi surfaces, such as its fabrication methods, applications, topography characterization methods, modelling techniques for optical simulations, and growth mechanisms. We then develop three main contributions that this thesis brings to the state of the art: a better understanding of BSi topography, modelling of its optical behaviour and insights into its formation mechanism. We develop a novel BSi topographical characterisation technique which is based on in-plane focused ion beam nanotomography and can reproduce sample details with submicron accuracy. We then present different methods of modelling BSi unit cells, based either on real surface topography obtained using the aforementioned technique, or on equivalent geometric shapes that are statistically representative for BSi topography. We are capable to obtain excellent matching between simulations and experimental data. Finally, we present an experimentally-backed phenomenological model that is capable of simulating the entire evolution of a surface from a planar substrate to fully developed BSi topography. We produce a phase diagram which captures the parameter combinations responsible for BSi formation. We also observe experimentally, and are able to reproduce within our model, a number of subtle effects that lead to the observed pattern densification that is responsible for BSi formation during cryo-DRIE

In this work, new small deflection magnetic actuators have been proposed, designed, and tested for applications in Surface Enhanced Raman Scattering optical sensors. Despite the fact that SERS sensors have been shown to increase Raman over ten orders of magnitude for molecular detection, several technological challenges have prevented the design of practical sensors, such as making SERS sensors that can efficiently detect a wide variety of molecules. Since the optimum signal-to-noise in SERS occurs at different excitation wavelengths for different molecules, individual metal nanostructures need to be designed and fabricated for each independent chemical species. One possible solution to this problem is to tune the plasmon resonance frequency of the metal nanoparticles to eliminate the need for individually optimized particles. In order to achieve a tunable local dielectric environment, and thus allow for control over the resonance frequency of metal nanoparticles, a new SERS sensor geometry is proposed and a large deflection magnetic actuator is fabricated and tested as a starting point for the design of a small deflection magnetic actuator. Using the newly developed SERS geometry and the optimized fabrication processing techniques, two small deflection magnetic actuator beam structures were designed, fabricated, and tested. These devices utilizes an off-chip electromagnet source able to produce a magnetic force of approximately 14 μN on the on-chip nickel film generating deflections up to 139 nm for the straight beam device and 164 nm for the curved beam device. iii In the process of characterizing the newly developed small deflection magnetic actuator, an integrated magnetic actuator with electrostatic restoration geometry was conceived. This device was designed to meet the specifications of the small deflection magnetic actuator as well as eliminate the need of an off-chip magnetic source and fully integrate the process atop the metal nanoparticle arrays. Using adhesive iron based magnetic strips as the magnetic drive source, circular NiFe beams with 1, 2, 3, and 4 mm diameters were designed and simulated. Calculations predicted maximum achievable actuation of up to 2.5 μm. Processing steps were laid out for a set of integrated devices as a possible predecessor to the newly designed small deflection magnetic actuator.

This study concentrates on two of the main processes involved in the fabrication of electrostatic valve assembly, thick resist photolithography and wet chemical etching of a polyamide film. The electrostatic valve has different orifice diameters of 25, 50, 75 and 100 µm. These orifice holes are to be etched in the silicon wafer with deep reactive ion etching. The photolithography process is developed to build a mask of 15 µm thick resist pattern on silicon wafer. This photo layer acts as a mask for deep reactive ion etching. Wet chemical etching process is developed to etch kapton polyamide film. This etched film is used as a stand off, gap between two electrodes of the electrostatic valve assembly. The criterion is to develop the processed using standard industry tools. Pre post etch effects, such as, surface roughness, etching pattern, critical dimensions on the samples are measured with Veeco profilometer.

Ferroelectric materials are characterized by a reversible spontaneous polarization in the absence of an electric field. The characteristic polarization response of a ferroelectric material to an applied electric field enables a binary state device in the form of a thin film ferroelectric capacitor that can be used to store digital information. This provides opportunities for the development of high speed, low cost and low power, nonvolatile memory devices. The development of commercial ferroelectric memory devices has however been hampered by (a) several reliability issues including fatigue, leakage current, aging, time dependent dielectric breakdown, retention and imprint and (b) processing problems including the development of a low temperature thin film deposition process and the development of a patterning technology. Lead zirconate titanate (PZT) is now widely considered as the most promising material for ferroelectric memory applications as a result of its excellent ferroelectric properties and wide operating temperature range. However, it is commonly found that metal electroded-PZT capacitors (e.g., Pt/PZT/Pt) show a loss of switchable polarization with cumulative switching cycles. This phenomenon is known as fatigue and is the one of the critical problems affecting the lifetime of ferroelectric memories. This research is primarily focused on the problem of fatigue. On the basis of a quantitative model, various guidelines to minimize the degradation problem have been derived. The model attributes fatigue to domain pinning by space charge that is caused by defect (e.g. oxygen vacancy) entrapment at various interface sites such as electrode-ferroelectric interface, domain boundaries and grain boundaries. Two different approaches to minimize the problem have been outlined : (a) control of the defect density and (b) control of the interface state. The control of interface state was achieved by replacing the metal electrodes with conducting oxide electrodes such as RuO₂. The oxide electrode/PZT capacitors were characterized for their diffusion barrier properties, perovskite phase formation, interface nature and ferroelectric properties. The results indicate that these oxide electroded PZT films are good candidates for nonvolatile memory applications. However, the leakage current levels at the operating voltages are far higher than the metal counterparts. Simultaneous minimization of fatigue and leakage current in PZT films was achieved by using multilayer metal/conducting oxide electrodes (e.g., Pt/RuO₂). The control of defect density was attained by (a) donor doping to compensate for the oxygen vacancies (e.g, Nb doping in PZT) and (b) utilizing ferroelectric materials that have a low intrinsic defect concentration. As a result of the latter approach, novel ferroelectric materials belonging to the layer-structure family of oxides have been identified as excellent candidates for fatigue free nonvolatile memory applications. Laser ablated SrBi₂(Ta_xNb_{1 - x})₂O₉ (0<x<1) films showed very good hysteresis characteristics (remnant polarization value of 11 µC/cm², coercive field of 60 kV/cm), no fatigue was observed up to 10⁹ switching cycles and very low leakage current densities. Furthermore, the formation and properties of these films were characterized. It was found grain size and orientation played a major role in determining the properties of these films. C-axis oriented films were found to exhibit almost no polarization. An additional objective of this research was to identify an etching technology (process integration issue) for patterning of the ferroelectric capacitors. The etching process should provide high etch rates, good etch anisotropy, high etch selectivity and minimal post etch residues. It has been shown that a reactive ion etch process with CCl₂F₂/O₂ as the etch gas mixture can meet these requirements. A detailed process study has been conducted to determine the mechanism of etching. / Ph. D.