Vandenilio, kaip energijos nešėjo gavyba ir saugojimas yra iki šiol neišspręsta problema. Viena iš perspektyvių vandenilio gavybos iš vandens technologijų yra katalitinis vandens skaidymas TiO2 paviršiuje. Šiame darbe nagrinėjama titano dioksido dangų formavimas plazmoje. Plazma formuojama vandens garuose, gauti jonai greitinami elektriniame lauke ir implantuojami į titano tūrį. Tai termodinamiškai nepusiausvyrinis procesas, kurio metu inicijuojama daug kitų procesų, keičiančių medžiagos paviršiaus sudėtį ir struktūrą. Darbe pristatomas fenomenologinis, vienadimensinis plazmos sąveikos su medžiaga modelis, medžiagos paviršinio sluoksnio elementinės sudėties kinetikos modeliavimui. Modelis įvertina keletą vienalaikių medžiagos sąveikos su plazma procesų, tokių kaip joninė implantacija, paviršiaus joninė erozija, adsorbcija, terminė difuzija. Didžiausias dėmesys šiame darbe buvo skiriamas difuzijai ir joninei implantacijai, kaip pagrindiniams masės pernešimo procesams su plazma sąveikaujančios medžiagos tūryje. Buvo pateikta keletas alternatyvių šiuos procesu aprašančių modelių. Darbe pateikiami deguonies koncentracijos profiliai titane, gauti po sąveikos su jonų pluošteliu suformuotu vandens garų plazmoje. Taip pat pateikiamas modelio taikymas šių eksperimentų modeliavimui. Gauti rezultatai taikant skirtingus modelius palyginti tarpusavyje, taip pat su eksperimento rezultatais. / The production and storage of hydrogen as energy carrier is still unsolved problem. One of the most promising hydrogen production technologies is water catalysis reaction on the surface of TiO2. In this work formation of TiO2 films in plasma is studied. Plasma is initiated in water vapour, obtained ions are accelerated in electric field and implanted into the bulk of titanium. It is thermodynamically non-equilibrium process by which many other plasma-material interaction processes occur. The one-dimensional, phenomenological model of ion beam interaction with solids, for the simulation of material surface composition kinetic during the process is presented. Few ion beam–material interaction processes are considered in the model, such as ion implantation, sputtering, adsorption, thermal diffusion. The main attention in this work has been paid to the processes of diffusion and ion implantation, as they are the main mass transport processes. Several alternative models for these processes have been proposed. The experimental oxygen concentration profiles in titanium after irradiation of water vapour plasma are presented. The model has been applied for the simulation of this experiment. Results obtained by different models have been compared.

Šiame darbe, panaudojant jonines-plazmines technologijas, sintezuotos Mg, MgH2, Mg-Al ir Mg(AlH4)2 plonos nanokristalinės dangos. Ištirta jų struktūros, paviršiaus morfologijos ir sudėties priklausomybė nuo nusodinimo ir hidrinimo plazmoje technologinių parametrų. Darbe panaudoti plėvelių formavimo metodai: (i) magnetroninis-joninis garinimas Ar dujų aplinkoje; (ii) plonų dangų prisotinimas vandeniliu, panaudojant vandenilio jonų implantacijos iš plazmos technologijas. Šio darbo originalumas susijęs su nepusiausvyrinių plazminių technologijų panaudojimu nanokristalinių medžiagų hidrinimui. Pirmą kartą atlikta metalų hidridų sintezė ir ištirta vandenilio kaupimosi kinetika nanostruktūrinėse medžiagose panaudojant plazminės vandenilio implantacijos technologiją. Gauti rezultatai patvirtina joninių-plazminių technologijų pranašumus, iš kurių svarbiausias - formuojamų plėvelių mikrostruktūros valdymas nanometriniame lygyje. Tyrimo metu, panaudojant vandenilio jonų implantaciją į Mg-Al dangas, pirmą kartą susintezuotas Mg(AlH4)2 hidridas. 5 storio Mg dangų transformacija į MgH2, hidrinimo procesą atliekant vandenilio plazmoje, įvyksta esant 400 K temperatūrai. Eksperimentiniai rezultatai atskleidė, kad Ti priemaišomis legiruotose Mg dangose paspartėja hidridų formavimosi kinetika, o vandenilio desorbcijos temperatūra sumažėja 60-80 K. Vandenilio desorbcijos kinetika Ti priemaišomis legiruotose Mg-Al dangose taip pat yra spartesnė, o jų desorbcijos temperatūra sumažėja 65 K... [toliau žr. visą tekstą] / In the present work Mg and MgAl thin films were fabricated using physical vapour deposition (PVD) technologies as non-traditional and new nanotechnology methods for designing high performance hydrogen storage materials. The physical vapour deposition technologies allow the formation of metastable metal, alloy and chemical compounds with strictly controlled composition, microstructure and stoichiometry at low temperatures. The synthesis of MgH2, MgAl and Mg(AlH4)2 films has been conducted in two steps: (i) fabrication of thin films employing magnetron sputtering in Ar gas, and (ii) hydrogenation of thin films employing plasma immersion ion implantation technologies. For the first time, chemical compound Mg(AlH4)2 has been synthesized using the deposition of Mg and Al atoms from gas phase in hydrogen plasma (reactive deposition with simultaneously hydrogen implantation). The transformation of Mg thin film to MgH2 takes place at 400 K temperature during hydrogenation in hydrogen plasma. Experimental results showed that hydriding kinetics of Ti-doped Mg film increases and desorption temperature decreases by 60-80 K and the maximum H2-effusion from the Ti-undoped Mg-Al takes place at temperature 475 K, and for the Ti-doped Mg-Al film – at temperature 410 K; the release time of accommodated hydrogen is shorted for the Ti-doped Mg-Al film. The mathematical model of hydrogenation shows that during the process of material irradiation in plasma the concentration of incident ions in... [to full text]

Applications of zinc oxide (ZnO) for optoelectronic devices, including light emitting diodes, semiconductor lasers, and solar cells have not yet been realized due to the lack of high-quality p-type ZnO. In the research presented herein, pulsed laser deposition is employed to grow Ag-doped ZnO thin films, which are characterized in an attempt to understand the ability of Ag to act as a p-type dopant. By correlating the effects of the substrate temperature, oxygen pressure, and laser energy on the electrical and microstructural properties of Ag-doped ZnO films grown on c-cut sapphire substrates, p-type conductivity is achieved under elevated substrate temperatures. Characteristic stacking fault features have been continuously observed by transmission electron microscopy in all of the p-type films. Photoluminescence studies on n-type and p-type Ag-doped ZnO thin films demonstrate the role of stacking faults in determining the conductivity of the films. Exciton emission attributed to basal plane stacking faults suggests that the acceptor impurities are localized nearby the stacking faults in the n-type films. The photoluminescence investigation provides a correlation between microstructural characteristics and electrical properties of Ag- doped ZnO thin films; a link that enables further understanding of the doping nature of Ag impurities in ZnO. Under optimized deposition conditions, various substrates are investigated as potential candidates for ZnO thin film growth, including r -cut sapphire, quartz, and amorphous glass. Electrical results indicated that despite narrow conditions for obtaining p-type conductivity at a given substrate temperature, flexibility in substrate choice enables improved electrical properties. In parallel, N+-ion implantation at elevated temperatures is explored as an alternative approach to achieve p-type ZnO. The ion implantation fluence and temperature have been optimized to achieve p-type conductivity. Transmission electron microscopy reveals that characteristic stacking fault features are present throughout the p-type films, however in n-type N-doped films high-density defect clusters are observed. These results suggest that the temperature under which ion implantation is performed plays a critical role in determining the amount of dynamic defect re- combination that can take place, as well as defect cluster formation processes. Ion implantation at elevated temperatures is shown to be an effective method to introduce increased concentrations of p-type N dopants while reducing the amount of stable post-implantation disorder. Finally, the fabrication and properties of p-type Ag-doped ZnO/n-type ZnO and p-type N-doped ZnO/n-type ZnO thin film junctions were reported. For the N-doped sample, a rectifying behavior was observed in the I-V curve, consistent with N-doped ZnO being p-type and forming a p-n junction. The turn-on voltage of the device was ∼2.3 V under forward bias. The Ag-doped samples did not result in rectifying behavior as a result of conversion of the p-type layer to n-type behavior under the n- type layer deposition conditions. The systematic studies in this dissertation provide possible routes to grow p-type Ag-doped ZnO films and in-situ thermal activation of N-implanted dopant ions, to overcome the growth temperature limits, and to push one step closer to the future integration of ZnO-based devices.

In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the electrical properties of as-grown, as-implanted and annealed samples within the temperature range of 80-400 K. To investigate the annealing effect on both the absorption and photoluminescence (PL) spectra, absorption and PL measurements were performed at room temperature. N-implantation reduced the resistivity order from 103 to 101 (&amp / #937 / -cm). We have used temperature dependent conductivity and Hall effect measurements to analyze the dominant scattering mechanisms. Hall measurements showed that all the samples had n-type conduction. Absorption measurements showed that InSe had direct band gap. It was observed that annealing had almost no effect an both room temperature absorption and PL spectra of the samples.

In this study, we used ion implantation technique to synthesize semiconductor (Ge, Si) nanocrystals in SiO2 matrix. Ge and Si nanocrystals have been successfully formed by Ge and Si implantation and post annealing. Implanted samples were examined by characterization techniques such as TEM, XPS, EDS, SAD, SIMS, PL, Raman and FTIR spectroscopy and the presence of Ge and Si nanocrystals in the SiO2 matrix has been evidenced by these measurements. It was shown that implantation dose, implantation energy, annealing temperature, annealing time and annealing ambient are important parameters for the formation and evolution of semiconductor nanocrystals embedded in SiO2 matrix. The size and size distribution of Ge and Si nanocrystals were estimated successfully by fitting Raman and PL spectra obtained from Ge and Si implanted samples, respectively. It was demonstrated that Si implanted and post annealed samples exhibit two broad PL peaks at &amp / #8764 / 625 and 850 nm, even at room temperature. Origin of these peaks was investigated by temperature, excitation power and excitation wavelength dependence of PL spectrum and etch-measure experiments and it was shown that the peak observed at &amp / #8764 / 625 nm is related with defects (clusters or chain of Si located near the surface) while the other is related to the Si nanocrystals. As an expected effect of quantum size phenomenon, the peak observed at &amp / #8764 / 850 nm was found to depend on the nanocrystal size. Finally, the formation and evolution of Ge and Si nanocrystals were monitored by FTIR spectroscopy and it was shown that the deformation in SiO2 matrix caused by ion implantation tends to recover itself much quicker in the case of the Ge implantation. This is a result of effective segregation of Ge atoms at relatively low temperatures.

Copy of author's previously published work inserted. / xii, 138, [51] leaves, [29] leaves of plates. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / The aim of this thesis is to investigate the process of applying the plasma immersion ion implantation (PIII) to shearing tools and to test surface modified tools in a sheep shearing environment. Detailed observations are made of the microstructural changes occurring near the surface of a Cr-Mo-V alloy tool steel rod subjected to nitrogen ion implantation at 350oC by the Australian Nuclear Science and Technology Organization (ANSTO) / Thesis (Ph.D.)--University of Adelaide, Dept. of Chemical Engineering, 1996

Doctor of Philosophy (PhD) / This thesis investigates ion energy distributions (IEDs) during plasma immersion ion implantation (PIII). PIII is a surface modification technique where an object is placed in a plasma and pulse biased with large negative voltages. The energy distribution of implanted ions is important in determining the extent of surface modifications. IED measurements were made during PIII using a pulse biased retarding field energy analyser (RFEA) in a capacitive RF plasma. Experimental results were compared with those obtained from a two dimensional numerical simulation to help explain the origins of features in the IEDs. Time resolved IED measurements were made during PIII of metal and insulator materials and investigated the effects of the use of a metal mesh over the surface and the effects of insulator surface charging. When the pulse was applied to the RFEA, the ion flux rapidly increased above the pulse-off value and then slowly decreased during the pulse. The ion density during the pulse decreased below values measured when no pulse was applied to the RFEA. This indicates that the depletion of ions by the pulsed RFEA is greater than the generation of ions in the plasma. IEDs measured during pulse biasing showed a peak close to the maximum sheath potential energy and a spread of ions with energies between zero and the maximum ion energy. Simulations showed that the peak is produced by ions from the sheath edge directly above the RFEA inlet and that the spread of ions is produced by ions which collide in the sheath and/or arrive at the RFEA with trajectories not perpendicular to the RFEA front surface. The RFEA discriminates ions based only on the component of their velocity perpendicular to the RFEA front surface. To minimise the effects of surface charging during PIII of an insulator, a metal mesh can be placed over the insulator and pulse biased together with the object. Measurements were made with metal mesh cylinders fixed to the metal RFEA front surface. The use of a mesh gave a larger ion flux compared to the use of no mesh. The larger ion flux is attributed to the larger plasma-sheath surface area around the mesh. The measured IEDs showed a low, medium and high energy peak. Simulation results show that the high energy peak is produced by ions from the sheath above the mesh top. The low energy peak is produced by ions trapped by the space charge potential hump which forms inside the mesh. The medium energy peak is produced by ions from the sheath above the mesh corners. Simulations showed that the IED is dependent on measurement position under the mesh. To investigate the effects of insulator surface charging during PIII, IED measurements were made through an orifice cut into a Mylar insulator on the RFEA front surface. With no mesh, during the pulse, an increasing number of lower energy ions were measured. Simulation results show that this is due to the increase in the curvature of the sheath over the orifice region as the insulator potential increases due to surface charging. The surface charging observed at the insulator would reduce the average energy of ions implanted into the insulator during the pulse. Compared to the case with no mesh, the use of a mesh increases the total ion flux and the ion flux during the early stages of the pulse but does not eliminate surface charging. During the pulse, compared to the no mesh case, a larger number of lower energy ions are measured. Simulation results show that this is caused by the potential in the mesh region which affects the trajectories of ions from the sheaths above the mesh top and corners and results in more ions being measured with trajectories less than ninety degrees to the RFEA front surface.

Thesis (Ph. D.)--University of Sydney, 2004. / Title from title screen (viewed 5 May 2008). Submitted in fulfilment of the requirements for the degree of Doctor of Philosophy to the School of Physics, Faculty of Science. Degree awarded 2004; thesis submitted 2003. Includes bibliographical references. Also available in print form.

Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2008. / Committee Chair: King, William; Committee Member: Graham, Samuel; Committee Member: Hesketh, Peter

O efeito bactericida de íons cobre é bem conhecido; no entanto a atividade inibitória depende diretamente da concentração desses íons no material base. Contudo, essa concentração deve ser controlada, pois o excesso destes íons pode ser tóxico e além disso, a implantação de cobre pode comprometer a resistência a corrosão do substrato metálico. A propriedade bactericida é desejável para aplicação em ligas metálicas empregadas em diversos setores, na assepsia de materiais que tenham contato direto com subprodutos que necessitam alta pureza e com baixíssimos índices de contaminação. O aço inoxidável austenítico AISI 304 é amplamente utilizado devido às suas propriedades mecânicas e de resistência à corrosão. Considerando isso, o aço AISI 304 é o foco do presente estudo, mesclando as características anticorrosivas naturais com a assepsia oligodinâmica proveniente da dopagem com íons de cobre. Nesse sentido, avaliou a resistência à corrosão do aço inoxidável AISI 304 com diferentes doses de cobre implantado (1015 íons.cm-2 e 1016 íons.cm-2) por monitoramento do potencial de circuito aberto e voltametria cíclica em uma solução eletrolítica de NaCl 3,5 % em peso. Através de simulações computacionais, previu-se que nos parâmetros escolhidos, a profundidade de implantação dos íons no substrato atingiu até 40 nm da superfície, com uma concentração de pico, maior teor de cobre, na profundidade de 12 nm. As amostras com doses de 1015 íons.cm-2 de cobre apresentaram o potencial de pites semelhante ao aço inoxidável austenítico AISI 304 sem implantação de Cu. Na análise de EDS observou-se que as áreas que não sofreram corrosão, apresentaram melhor distribuição dos elementos de liga e do cobre implantado em comparação com as regiões com maior incidência de pites. A maior intensidade de pites foi encontrada para a amostra com maior dose de cobre implantado (1016 íons.cm-2 de cobre). / The bactericidal effect of copper ions is well known; however, the inhibitory activity depends directly on the concentration of these ions in the base material. However, this concentration should be controlled because the excess of these ions can be toxic and the implantation of copper may compromise the corrosion resistance of the metal substrate. The bactericidal property is desirable for application in metal alloys used in the several sectors, in the asepsis of materials that have direct contact with by-products that require high purity and with very low contamination rates. The AISI 304 austenitic stainless steel is widely used because of its mechanical properties and corrosion resistance. Considering this, the AISI 304 is the focus of the present study, mixing the natural anticorrosive characteristics with the oligodynamic aseptic from the copper ions doping. The corrosion resistance of AISI 304 stainless steel with different doses of implanted copper (1015 ions.cm-2 and 1016 ions.cm-2) was evaluated by monitoring the open circuit potential and cyclic voltammetry in an electrolytic solution of NaCl 3,5% by weight. Through computational simulations, it was predicted that in the chosen parameters, the implantation depth of the ions in the substrate reached up to 40 nm from the surface, with a peak concentration, higher copper content, at the depth of 12 nm. The samples with doses of 1015 ions.cm-2 of copper had the pit potential similar to the austenitic stainless steel AISI 304 without implantation of Cu. In EDS analysis, it was observed that the areas that did not undergo corrosion had better distribution of the alloying elements and of the implanted copper compared to the regions with a higher incidence of pitting. The highest pitting intensity was found for the sample with the highest dose of implanted copper (1016 ions.cm-2 copper).