In the literatures of investigating the coupling mechanism between laser diodes and fibers, Gaussian beam profile was used to describe the propagation of laser beams. But the real laser diode beams exist astigmatism. In order to understand the distributions of real laser diode beams, we used single-mode fiber interferometer to measure the near-field intensity and phase distributions of laser diodes. The nanometer aperture of taper fiber was used to scan through the horizontal and vertical directions across the maximal intensity point of the planes which were perpendicular to propagation axis to measure the intensity and phase distributions of laser diodes. In the measurement of phase distributions, these two single-mode fibers produced interference fringes through accepting laser beams. When the taper fiber scanned the optical field and the reference fiber kept a fixed distance from a laser diode for a stationary phase, the interference fringes shifted because of the phase difference of laser diodes change. In the measurement, in order to improve the stability of interference fringes and consider the aperture of taper fiber, we altered some experiment frameworks. There were four types of experimental framework. According to the experiment results of the near-field measurements, the measured beam widths along the horizontal and vertical directions at the laser diode facet were 4.11 £gm and 1.57 £gm respectively. The measured wavefront radius curvature were 6.59 £gm and 2.96 £gm in horizontal axis and vertical axis respectively. After Gaussian beam fitting, the beam widths along the horizontal and vertical directions at the laser diode facet were 4.04 £gm and 0.83 £gm respectively. The difference in beam widths between measured values and Gaussian fitting were 0.07 £gm and 0.74 £gm. The measured beam widths and the Gaussian beam curve fitting had similar results. We could see that the beam spread tendency in the z-axis for the laser beam which propagated in the z direction. In the phase distribution measurement, the measured wavefront radius curvatures and the theoretically calculated Gaussian beam values had a slight difference. The calculated wavefront radius curvatures at the laser diode facet were 11921.51 £gm and 3.48 £gm in horizontal axis and vertical axis respectively. They were 1809 times and 1.2 times of the measured values. The aperture of taper fiber was expanded because of the energy of laser beams, which also caused the spatial resolution degeneration. Moreover, the wavefront radius curvature in horizontal direction was biggish so the measurement framework also limited the ability of the phase distribution measurement. The above points were the reasons to cause the error of the phase distribution measurement. Furthermore, the measurement of the laser diode facet is under investigation.

In this thesis, with external cavity semiconductor laser, a high lateral resolution thickness measurement is proposed and demonstrated. The approach is typical an intra-cavity measurement of focused cell thickness by wavelength tuning of an external cavity laser diode. In addition, using blue light of 406nm as laser diode, higher lateral resolution is also observed. Using the proposed thickness method, the lateral resolution and longitudinal resolution have been demonstrated with 20£gm and 0.15£gm, respectively. We also discuss the feasibility of £gm scaled lateral resolution through improvement of laser diode, such as M^2~1.

A simulation algorithm is proposed in this thesis to investigate the effects of lensed fiber parameters on the variation of radius of curvature of the melted lens and the coupling efficiency of butterfly type laser diode transiver module. Two different endface shapes, i.e. the taper and the conical-wedge type lensed fibers, will be studied. The effect of endface shapes, sizes, and the melting zone volume on the coupling efficiency of lensed fibers are simulated and discussed. In the study on the conical type lensed fiber, the MARC¡¦s elastic-plastic-thermal finite element model is employed to simulate the melting and the solidification processes at the fiber tip endface with different conical angles. The temperature dependent material properties are used to calculate the melting zone and the post-melten deformation during the heating process. The Surface Evolver Software has also been employed to simulate the solidified lens shapes. The variation of radius of curvature of the tip lens is analyzed. The ZEMAX optical analysis software is applied to explore the relation between the coupling efficiency and the distribution of the radius of curvature. The variation of laser signal coupling efficiency introduced from different conical lensed fibers is simulated numerically. A good agreement between the published measured data and the simulated results indicate the proposed simulation model is feasible. The effect of endface shape and molten zone size on the conical wedge type lensed fiber has been studied in a similar way. The coherence between the shape of solidified elliptical lens at fiber tip and the coupling efficiency for the 980nm LD will be explored. Different endface shapes will also be investigated by using the simulation model proposed previously. Different aspect ratio of the conical-wedge type tip will be introduced to compensate the elliptical LD ray model and to recover the coupling efficiency loss. The agreement between the results simulated using the proposed model and the measured data is examined. The simulated results indicate that the coupling efficiency of a butterfly type laser diode transever can be improved significantly by controlling the shape of the lens introduced in this type lensed fiber. The optimal grinding parameters and the melting parameters used to fabricate the lensed fibers will also be studied. The effects of the shape parameters, i.e. the conical taper angle, the wedge angle and the size of molten zones on the curvature variation of the lens will also be studied. A better understanding about the design and fabrication of the lensed fiber of a laser diode based transever module is expected from the results presented in this thesis.

Cette étude adresse une technologie de diodes laser à semi-conducteur InGaAs/AlGaAs/GaAs émettant à 980 nm en configuration puce nue (CSE-Composant Sur Embase) utilisées pour le pompage optique dans les amplificateurs à fibre dopée Er3+. Il s'agit de composants possédant un tel niveau de maturité technologique que l’évolution des paramètres observés au cours du temps ne présente plus de variations suffisamment significatives pour pouvoir dégager des conclusions exhaustives en termes de fiabilité. La recherche de méthodes alternatives et/ou complémentaires aux méthodes dites « classiques » visant à la compréhension des mécanismes de défaillance et l’identification des signatures indiquant une possible dégradation future des diodes laser, relève aujourd’hui un défi stratégique pour les composants actuels. Dans ce contexte, cette étude propose un ensemble de techniques basées sur la discrimination du fonctionnement des diodes en régime direct et en particulier en régime inverse par spectroscopie électrique. La corrélation des différentes mesures en régime inverse, très peu étudié dans la caractérisation des diodes laser, peut mettre en évidence des comportements atypiques qui révèlent la présence de défauts ponctuels résiduels dans le volume d’une diode car les courants observés sont très faibles. Le régime inverse permet d'offrir des perspectives intéressantes en considérant que ce régime reste de nos jours quasiment inexploré pour les composants optoélectroniques émissifs tels que les diodes laser. / This study addresses InGaAs / AlGaAs / GaAs laser diode emitting at 980 nm in bare chip configuration (COS-Component on Submount) for optical pumping in Er3+ doped fiber amplifiers. These devices have a level of technological maturity that the changes in the parameters observed during aging do not present sufficiently significant variations in order to obtain exhaustive conclusions in terms of reliability. Searching for alternative and/or complementary methods to the so-called « classical » methods aimed to understanding the failure mechanisms and the identification of signatures indicating possible future degradation of the laser diodes, represents today a strategic challenge for the current components. In this context, this study suggests a set of techniques based on the discrimination of the operation mode of the diodes in direct bias and in particular in reverse bias by electrical spectroscopy. The correlation of the different measurements in reverse bias, not more studied in the characterization of laser diodes, can reveal atypical behaviors highlighting presence of residual point defects in the volume of a diode because the currents observed are very weak. The reverse bias makes it possible to offer interesting perspectives considering that, this operation mode remains today almost unexplored for optoelectronic emitting devices such as laser diodes.

Kyoto University (京都大学) / 0048 / 新制・論文博士 / 博士(工学) / 乙第12695号 / 論工博第4084号 / 新制||工||1555(附属図書館) / 29947 / (主査）教授 平尾 一之, 教授 田中 勝久, 教授 三浦 清貴 / 学位規則第4条第2項該当

This diploma thesis deals with optical and optoelectronic components. The first part describes three selected optical and three optoelectronic components. Optical components include power divider, isolator and circulator. The optoelectronic ones are laser diode, photodetector and modulator. Basic measurement parameters were defined for each component. In the experimental part, four components from different manufacturers were measured. Selected components are power dividers, isolators, circulators and a laser diode. Subsequently, the measured parameters were compared with the catalog values.

An active core fiber optic gas sensing technique has been developed by using a photonic crystal (PC) hollow core fiber (HCF) as a transducer and a tunable diode laser as a light source for multi-gas sensing. The intrinsic optical absorption signal of an analyte molecule in the near nfrared region is monitored for sensing C2H2,CO2 and NH3. Although the overtone absorptions are known to have low absorption cross-sections, this sensor can detect these gas components down to the parts-per-million (ppm) level by using a 1-meter hollow core fiber as a transducer. This sensor is an example of application of PC-HCF to gas sensor design. The sensitivity of this gas sensing technique can be improved by introducing periodic openings along the fiber, decreasing the hole diameter down to 0.5 mm and using a longer hollow optical fibers. Other advantages of this gas sensing technique include less interference, fast response and potential applications like high temperature, remote and corrosive gas sensing.

No description available.

Silicon photonics provides an environmentally sustainable pathway to a more robust data infrastructure. To compensate for optical power losses, methods of amplification are required; specifically, amplifiers that can fit in a small footprint for applications in data centres. Semiconductor optical amplifiers (SOA) provide such a solution, and can be fabricated using III-V ternary or quaternary materials to enhance optical signals through a device on the scale of most CMOS components. This research sought to fabricate an InGaAsP multiple quantum well semiconductor optical amplifier using the facilities in McMaster University’s Centre for Emerging Device Technologies (CEDT). A ridge waveguide laser diode was first fabricated and validated, then altered by applying an anti-reflective coating to the waveguide facets to suppress reflections in the Fabry-Perot cavity in an attempt to create an SOA. The design process and fabrication methodology are explained, including an analysis of failed methodologies. Characterization measurement techniques are then detailed for the fabricated devices. Finally, the performance of the devices is presented, and future steps are suggested for improving the fabrication process to enhance device characteristics. The fabricated laser diodes produced an output power in excess of 20 mW at a peak wavelength near 1580 nm. The subsequently coated devices proved difficult to measure, displaying a maximum of 0 dB or 1 dB gain when checked for amplification, with suspicions that output loss (and therefore gain) was higher than measured. The coated devices exhibited gain saturation between -10 and 0 dBm of input power. Owing to the shapes of their characteristic curves, it was determined that SOA devices were successfully created. / Thesis / Master of Applied Science (MASc)

Lasers bombeados por diodo semicondutor emitindo em 1mm têm diversas aplicações. Para muitas destas aplicações é desejado um feixe laser com uma boa qualidade e alta potência. Um dos maiores problemas encontrado quando se utiliza altas potências de bombeamento é a forte lente térmica gerada no meio ativo. Neste trabalho estuda-se um laser de Nd:YVO4 bombeado transversalmente por diodo laser em regime contínuo. Este tipo de bombeamento possibilita aproveitar o alto coeficiente de absorção do cristal tornando possível a obtenção de altas eficiências. Duas configurações de ressonadores foram estudadas. A primeira com uma dobra em ângulo rasante na superfície de bombeamento do cristal e a segunda com duas dobras nesta mesma face. Um laser de 22 watts de potência de saída e eficiência angular de 74% foi obtido com a primeira configuração sob um bombeamento de 35 watts. A qualidade do modo era de M2 = 26 ´ 11, na horizontal e na vertical, respectivamente. Uma melhora significativa na qualidade do feixe foi demonstrada quando feita a segunda dobra dentro do cristal. Uma potência de 17 watts foi atingida com essa configuração com qualidade de feixe de M2 = 3,4 ´ 3,7, na horizontal e na vertical, respectivamente. / Within the existing variety of laser cavity geometries and gain materials there is one combination that is particularly interesting because of its reduced complexity and high efficiency: the edge-pumped slab-laser using grazing-incidence geometry and a gain media with a very high pump absorption cross-section. In this work we studied a diode side-pumped Nd:YVO4 cw laser. We describe a single and a multiple bounce laser configurations. We demonstrate 22 W of multimode output power for 35 watts of pump power with a single pass through the gain media. A high optical-to-optical conversion efficiency of 63% and a slope efficiency of 74% with a very compact and simple Nd:YVO4 cavity that uses joint stability zones was achieved. The beam quality was M2 = 26 ´ 11 in the horizontal and vertical direction, respectively. With a double pass configuration we achieved 17 watts with a better beam quality of M2 = 3,4 ´ 3,7, in the horizontal and vertical direction, respectively.