We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y2, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3′ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

A comprehensive study on growth of ferrimagnetic manganese zinc ferrite (Mn0.5Zn0.5Fe2O4) films on single crystalline strontium titanate(001) (SrTiO3) substrates was carried out. Under the optimized conditions, a thin film with a layer thickness of 200 nm was deposited, and the structural properties were investigated. Contrary to data published in literature, no buffer layer was necessary to achieve epitaxial growth of a poorly lattice-matched layer. This was confirmed for Mn0.5Zn0.5Fe2O4(001) on SrTiO3(001) by x-ray diffraction and the adjoined phi scans, which also revealed a lattice compression of 1.2% of the manganese zinc ferrite film in the out-of-plane direction. Using x-ray photoelectron spectroscopy, the near surface stoichiometry of the film could be shown to agree with the intended one within the uncertainty of the method. X-ray absorption spectroscopy showed an electronic structure close to that published for bulk samples. Additional x-ray magnetic circular dichroism investigations were performed to answer detailed structural questions by a comparison of experimental data with the calculated ones. The calculations took into account ion sites (tetrahedral vs. octahedral coordination) as well as the charge of Fe ions (Fe2+ vs. Fe3+). Contrary to the expectation for a perfect normal spinel that only Fe3þ ions are present in octahedral sites, hints regarding the presence of additional Fe2+ in octahedral sites as well as Fe3+ ions in tetrahedral sites have been obtained. Altogether, the layer could be shown to be mostly in a normal spinel configuration.

Ce travail est consacré à l’étude de l’incorporation volontaire des dopants dans des films de carbure de silicium épitaxiés par la technique de dépôt chimique en phase vapeur. Le rôle des principaux paramètres de croissance (température, flux de dopant, vitesse de dépôt, pression dans le réacteur et le rapport C/Si) sur l’incorporation d’azote et d’aluminium a été étudié en détail. Les travaux menés jusqu’ici ont largement exploré les caractéristiques de l’incorporation de dopants, en particulier l’incorporation d’azote et ont montré des résultats parfois très dépendants de l’équipement de croissance utilisé. Afin d’explorer cette influence, une étude expérimentale exhaustive sur l’incorporation de N et Al a été réalisée sur des couches homoépitaxiées 4H-SiC sur la face carbone et sur la face silicium de substrats 4H-SiC dans nos réacteurs CVD. Cette étude a été complétée par une analyse des propriétés structurales, optiques et électriques de couches 4H-SiC dopé Al. Aussi, la fabrication de diodes pn a été expérimentée sur les couches épitaxiées dans nos réacteurs. Nous avons pu observer différentes tendances expérimentales selon la nature du dopant, l’orientation cristalline du substrat et l’environnement chimique durant la croissance. Nous en déduisons que le mécanisme derrière les tendances observées est largement influencé par des facteurs comme les conditions de croissance (c'est-à-dire la température de croissance et/ou la pression) et la couverture de carbone à la surface de la croissance, surtout sur la face C / This work is dedicated to the investigation of intentional dopant incorporation in silicon carbide epilayers grown by chemical vapor deposition technique. The role of main process conditions (growth temperature, dopant supply, deposition rate, growth pressure and C/Si ratio) on both, Nitrogen and Aluminum incorporation was studied in details. Previous works have widely explored the characteristics of dopant incorporation, especially the nitrogen incorporation addressing a potential influence of growth equipment for the observed incorporation trends. An exhaustive experimental study of N and Al incorporation was performed for homoepitaxial 4H-SiC layers grown on Si- and C-faces of 4H-SiC substrates in our CVD setups to explore such influence. It was completed by the assessment of the structural, optical and electrical properties of the Al doped 4H-SiC films. Furthermore, the fabrication of pn diodes was tested on the grown layers. We have observed different experimental tendencies depending on dopant nature, crystal orientation and chemical environment. We conclude from these observations that the mechanism behind the experimentally obtained tendencies is widely influenced by factors such as process conditions (i.e. growth temperature and/or pressure) and the carbon coverage at the grown surface, especially on C-face