With rapid development of light emitting device, the detection techniques of semiconductor are more and more important, which include time-resolved photoluminescence (TRPL) and optical beam induced current (OBIC) microscopy. In this thesis, we realize the carrier behaviors of active region with multiple quantum wells (MQWs) by these microscopies, and the samples are light emitting diodes (LEDs). However, PL intensity of LEDs increase but OBIC not due to external field compensates, on the other hand, reducing PL lifetime indicates the response time of device shorter with higher reverse bias.

In this research, we investigated a novel rigid-rod polymer sPBI for mono-layer polymer light emitting diode (PLED) fabrication and luminescence emission. sPBI could be a luminescent polymer with a low threshold voltage of 4.5 V and green light electroluminescence emission (530 nm). Its SO3H pendant attached to the p-phenyl ring improved electronic delocalization along the backbone resulted in a red shift of the absorption spectrum. By attaching propanesulfonated pendants to the heterocyclic moiety of intractable fully conjugated sPBI, water-soluble rigid-rod polyelectrolyte sPBI-PS(Li+) was synthesized to promote its processibility in water or common organic solvent. This water-soluble rigid-rod polyelectrolyte sPBI-PS(Li+) was fabricated for polymer light-emitting electrochemical cells (PLECs) with LiCF3SO3 (LiTf) or LiN(CF3SO2)2 (LiTfSI) dopants for investigating the influence of propanesulfonated pendants as well as dopants on the opto-electronic emission and the room-temperature DC conductivity. The effect of lithium salts (LiTf or LiTfSI) on photoluminescence color of doped sPBI-PS(Li+) films was negligible. sPBI-PS(Li+) PLECs doped with 0.41 and 1.01 wt. % of LiTfSI showed higher green light electroluminescence emission (514 nm) with a lower threshold voltage of 3.0 V and -4.6 V, respectively. Emission brightness of the sPBI-PS(Li+) PLEC did not raise upon increasing the ionic conductivity of the luminescent layer.

GaN-based light emitting diodes (LEDs) face several challenges if the technology is to make a significant impact on the solid state lighting market. The two most pressing of these challenges are cost and efficiency. The development of alternative substrate technologies shows promise toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on ZnO and Si. ZnO, because of its similar lattice constant and thermal expansion coefficient, is a promising substrate for growth of low defect-density GaN. The major hurdles for GaN growth on ZnO are the instability of ZnO in a hydrogen atmosphere and out-diffusion of zinc and oxygen from the substrate. A process was developed for the MOCVD growth of wurtzite GaN and InxGa1-xN on ZnO, and the structural and optical properties of these films were studied. High zinc and oxygen concentrations remained an issue, however, and the diffusion of zinc and oxygen into the subsequent GaN layer was studied more closely. Silicon is the most promising material for the development of an inexpensive, large-area substrate technology. The challenge in GaN growth on Si is the tensile strain induced by the lattice and thermal mismatch between GaN and Si. A thin atomic layer deposition (ALD)-grown Al2O3 interlayer was employed to relieve strain while also simplifying the growth process. While some strain was still observed, the oxide interlayer leads to an improvement in thin film quality and a reduction in both crack density and screw dislocation density in the GaN films. A comparison of GaN-based LEDs grown on sapphire and Al2O3/Si shows similar performance characteristics for both devices. IQE of the devices on silicon is ~32%, compared to ~37% on sapphire. These results show great promise toward an inexpensive, large-area, silicon-based substrate technology for MOCVD growth of GaN-based optoelectronic devices.

No description available.

PROPERTIES OF LIGHT EMITTING DIODES FOLLOWING COBALT-60 IRRADIATION &Ouml / zcan, Safak M.S., Department of Physics Supervisor: Prof. Dr. ibrahim G&uuml / nal September 2004, 71 pages The main purpose of this study is to investigate the effects of gamma radiation on the properties of the light emitting diodes. GaP and GaAsP LEDs are used in the study. It is observed that the exposure of a light emitting diode affects its various properties. A cobalt-60 gamma-cell is used to irradiate the selected light emitting diodes. For the different total doses of gamma pre-irradiation and post-irradiation I-V characteristics and spectral responses are recorded. The capacitance characteristics are measured at 1MHz at room temperature. Gamma ray bombardment of these LEDs results in reduction of electroluminescent intensity and increase in forward current up to levels tested. In GaP diodes dominant current transport mechanism has found to be effected by irradiation. No noticeable change is observed in the series resistances. The impurity density remains same in the green LED and increases in the red one due to the irradiation, which is deduced from the C-V characteristics. Both the circuit designers and the users should be aware of these effects in order to reach a reliable application for these components in a radiation environment.

Research in the field of Photonics is in part, directed at the application of light-emitting materials based on silicon platforms. In this work silicon wafers are modified by carbon ion implantation to incorporate silicon carbide, a known light-emitting material. Ion beam synthesis treatments are applied with implant energy of 20 keV, and ion fluences of 3, 5 and 10 × 1016 ions/cm2 at both ambient temperature and high temperature (400 °C). The samples are annealed at 1000 °C, after implantation. The carbon ion implanted silicon is characterized using Raman and Fourier transform infrared spectroscopic techniques, grazing-incidence X-ray diffraction, transmission electron microscopy and electron energy loss spectroscopy. The materials are observed to have a multilayer structure, where the ambient temperature implanted materials have an amorphous silicon layer, and an amorphous silicon layer with carbon-rich, nanoscale inclusions. The high temperature implanted materials have the same layers, with an additional polycrystalline Si layer at the interface between the implanted layer and the target substrate and the amorphous Si layer with SiC inclusions is reduced in thickness compared to the ambient temperature samples. The carbon-rich inclusions are confirmed to be SiC, with no evidence of carbon clusters in the materials observed using Raman spectroscopy. The carbon ion-implanted material is used to fabricate Schottky diodes having a semitransparent gold contact at the implanted surface, and an aluminum contact on the opposite side. The diodes are tested using current-voltage measurements between -12 and +15 V. No reverse breakdown is observed for any of the diodes. The turn-on voltages for the ambient temperature implanted samples are 2.6±0.1 V, 2.8±0.6 V and 3.9±0.1 V for the 3, 5 and 10 × 1016 ions/cm2 samples, respectively. For the high temperature implanted samples, the turn-on voltages are 3.2±0.1 V, 2.7±0.1 V, and 2.9±0.4 V for the implanted samples with same fluences. The diode curves are modeled using the Shockley equation, and estimates are made of the ideality factor of the diodes. These are 188±16, 224.5±5.8, and 185.4±9.2 for the ambient temperature samples, and 163.6±6.3, 124.3±5.3, and 333±12 for the high temperature samples. The high ideality factor is associated with the native oxide layer on the silicon substrate and with the non-uniform, defect-rich implanted region of the carbon ion implanted silicon. Red-orange visible light emission from the diodes is observed with voltage greater than the turn-on voltage applied across the diodes. The luminescence for the ambient temperature samples is attributed to porous silicon, and amorphous silicon. The high temperature implanted samples show luminescence associated with porous silicon, nanocrystalline silicon carbide, and defects in silicon related to ion implantation. The luminescent intensity observed for the ambient temperature samples is higher than for the high temperature samples. The dominant luminescence feature in the carbon ion-implanted silicon material is porous silicon, which is described by quantum confinement of excitons in silicon.

Cette thèse porte sur la réalisation de composants photoniques à base de fils de nitrures III-V. Les fils de GaN non-catalysés ont été élaborés de manière auto-assemblée par épitaxie en phase vapeur aux organométalliques (MOVPE) sur saphir. Un des axes de ce travail a porté sur la croissance organisée de ces fils à travers un réseau d’ouvertures défini par lithographie et gravure d’une couche de SiNx. Nous avons étudié en particulier l’influence des paramètres de croissance (température, pression, ratio V/III) et du motif sur l’homogénéité de la croissance sélective. Ces fils ont servi de substrat pour la croissance d’hétérostructures radiales cœur-coquille InGaN/GaN.D’autre part, la croissance, la fabrication et les propriétés physiques de trois types de composant ont pu être étudiées :-Des cellules solaires à fils uniques. Nous avons comparé l’efficacité de conversion de deux types d’hétérostructures : des coquilles épaisses d’In0.1Ga0.9N et des coquilles à 15 et 30 puits quantiques In0.18Ga0.82N/GaN. Après optimisation du contact électrique sur la coquille p-GaN, un rendement maximal de 0,33 % a été obtenu avec des fils à 30 puits quantiques sous éclairement équivalent à 1 soleil (AM1.5G). Le seuil d’absorption mesuré par spectroscopie de photocourant varie entre 400 et 440 nm.- Une plateforme émetteur-détecteur. Le système, qui fonctionne à 400 nm, comprend deux fils de GaN à hétérostructure radiale InGaN/GaN positionnés sur le même substrat et couplés par un guide d’onde en SiNx. La caractérisation électrique du dispositif a mis en évidence une durée de commutation inférieure à 0,25 s sans photocourant persistant.- Des diodes électroluminescentes (LED) flexibles. Ces diodes qui émettant dans le visible (400-470 nm) ont été réalisées en se basant sur une approche hybride organique/inorganique. Les fils émetteurs à puits quantiques InGaN/GaN sont encapsulés dans une matrice organique de PDMS puis détachés de leur substrat de croissance. Les contacts sont réalisés à partir de nanofils d’argent qui présentent l’avantage d’être à la fois flexibles, transparents et conducteurs. A partir de ce procédé, une LED bicolore flexible a été réalisée en combinant des émetteurs bleus et « verts ». / This thesis reports on the realization of photonic devices based on nitride wires. Self-assembled GaN wires were grown without catalyst by metal-organic vapor phase epitaxy (MOCVD) on sapphire substrates. Part of this work focused on the selective area growth of GaN wires through a dielectric SiNx mask with regular arrays of holes defined by lithography and dry etching. We studied the influence of the growth conditions (temperature, pressure, V/III ratio) and pattern geometry on the homogeneity of the selective area growth. These wires were used as templates for the growth of core-shell InGaN/GaN heterostructures. In addition, the growth, microfabrication process and properties of three types of devices were studied:- Single wire solar cells. We compared the efficiency of two type of heterostructures: shells composed of thick In0.1Ga0.9N layers and In0.18Ga0.82N/GaN quantum wells. After optimization of the electrical contact on the p-GaN shell, a maximal conversion efficiency of 0,33 % was obtained on single GaN wires with a shell of 30 quantum wells under 1 sun illumination (AM1.5G). Photocurrent spectroscopy revealed that the wire absorption edge varied between 400 and 440 nm.- An integrated photonic platform. The system, that operates around 400 nm, is composed of two GaN wires with radial InGaN/GaN heterostructures positioned on the same substrate and coupled with a SiNx waveguide. The electrical characterization of the platform revealed a switching speed inferior to 0.25 s without persistent photocurrent.- Flexible light emitting diodes (LED). The LED fabrication is based on a dual approach which associates inorganic InGaN/GaN emitters (400-470 nm) and a polymer. The wires are encapsulated in a PDMS matrix before being detached from their native substrate. Electrical contacts are made with silver nanowires which are flexible, highly conductive and transparent in the visible range. Based on this procedure a two-color LED was realized by stacking a blue and a “green” LED.

abstract: Current organic light emitting diodes (OLEDs) suffer from the low light extraction efficiency. In this thesis, novel OLED structures including photonic crystal, Fabry-Perot resonance cavity and hyperbolic metamaterials were numerically simulated and theoretically investigated. Finite-difference time-domain (FDTD) method was employed to numerically simulate the light extraction efficiency of various 3D OLED structures. With photonic crystal structures, a maximum of 30% extraction efficiency is achieved. A higher external quantum efficiency of 35% is derived after applying Fabry-Perot resonance cavity into OLEDs. Furthermore, different factors such as material properties, layer thicknesses and dipole polarizations and locations have been studied. Moreover, an upper limit for the light extraction efficiency of 80% is reached theoretically with perfect reflector and single dipole polarization and location. To elucidate the physical mechanism, transfer matrix method is introduced to calculate the spectral-hemispherical reflectance of the multilayer OLED structures. In addition, an attempt of using hyperbolic metamaterial in OLED has been made and resulted in 27% external quantum efficiency, due to the similar mechanism of wave interference as Fabry-Perot structure. The simulation and optimization methods and findings would facilitate the design of next generation, high-efficiency OLED devices. / Dissertation/Thesis / Masters Thesis Mechanical Engineering 2016

Observando o atual interesse em polímeros organometálicos para diversas aplicações, foi feita a síntese de uma série de polímeros conjugados contendo ferroceno na cadeia principal visando à investigação de suas propriedades, em especial fenômenos magnetorresistivos, magneto-ópticos e de óxido-redução. Os polímeros preparados pelo método de McMurry foram os seguintes: PFV: poli(1,1\'-ferrocenilenovinileno) e PFV-DOPPV-M: poli[1,1\'-ferrocenilenovinileno-alt-(2,5-di-n-octilóxi)-1,4-fenilenovinileno]. Outros dois polímeros foram preparados utilizando o método de polimerização de Wittig, o PFV-DOPPV-W: poli[1,1\'-ferrocenilenovinileno-alt-(2,5-di-n-octilóxi)-1,4-fenilenovinileno] e o PFV-DMPPV: poli[1,1\'-ferrocenileno-vinileno-alt-(2,5-dimetóxi)-1,4-fenilenovinileno]. A síntese de polímeros contendo segmentos π-conjugados equenos e bem definidos separados por segmentos não-conjugados é uma das melhores stratégias para a obtenção de polímeros emissores de luz azul. Com base nesse argumento foi feita a síntese de uma série de polímeros contendo um derivado metoxilado de bisfenol-A (BPA) na cadeia principal, alternando-se com unidades de PPV ou PFV que apresentam segmentos conjugados bem definidos. Os polímeros preparados foram os seguintes: BPA-DOPPV:poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-(di-n-octilóxi)-1,4-divinilbenzeno]; BPA-PPV: poli[2,2-bis(4-metoxifenil)-propano-alt-1,4-ivinilbenzeno]; BPA-DMPPV: poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-dimetóxi-1,4-ivinilbenzeno]; BPA-DBPPV: poli[2,2-bis(4-metoxifenil)-propano-alt-2,5-dibromo-1,4-divinilbenzeno] e BPA-PFV: poli[2,2-bis(4-metoxifenil)-propano-alt-1,1\'-divinil-ferroceno]. Todos os polímeros obtidos foram caracterizados por métodos espectroscópicos (UV-VIS, IR, RMN), análises térmicas, SEC, entre outras. Algumas aplicações foram estudadas para esses polímeros, tais como a construção de um eletrodo de ORP modificado, a produção de diodos orgânicos emissores de luz (OLEDs) e a determinação da resposta \"olfativa\" de sensores de gases. / Owing to the current interest in organometallic polymers and their applications, a group of conducting polymers containing ferrocene in the main chain was synthesized aiming the study of their magnetoresistive, magneto-optic and redox properties. The following polymers were prepared via McMurry method: poly(1,1\'-ferrocenylenevinylene) (PFV) and poly[1,1\'-ferrocenylenevinylene-alt-(2,5-di-n-octiloxy)-1,4-phenylenevinylene] (PFV-DOPPV-M). Two other polymers were synthesized via Wittig method: poly[1,1\'-ferrocenylenevinylene-alt-(2,5-di-n-octiloxy)-1,4-phenylenevinylene] (PFV-DOPPV-W) and poly[1,1\'-ferrocenylene-vinylene-alt-(2,5-dimethoxy)-1,4-phenylenevinylene] (PFV-DMPPV). The synthesis of polymers with well-defined small π-conjugated segments separated by non-conjugated segments is one of the best strategies to obtain blue light emitting polymers. Based on this statement the synthesis of several polymers formed by methoxylated bisphenol-A (BPA) alternated with PPV or PFV units was performed. The prepared polymers were the following: poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-(di-n-octiloxy)-1,4-divinylbenzene] (BPA-DOPPV), poly [2,2-bis(4-methoxyphenyl)-propane-alt-1,4-divinylbenzene] (BPA-PPV), poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-dimethoxy-1,4-divinylbenzene] (BPA-DMPPV), poly[2,2-bis(4-methoxyphenyl)-propane-alt-2,5-dibromo-1,4-divinylbenzene] (BPA-DBPPV) and poly[2,2-bis(4-methoxyphenyl)-propane-alt-1,1\'-divinylferrocene] (BPA-PFV). All the synthesized polymers were characterized by spectroscopic methods (UV/VIS, IR, NMR), thermal analysis, SEC, among others. Some applications to these polymers were studied: a modified ORP electrode, organic light emitting devices (OLEDs) and gas sensors.

Grâce à leur haute efficacité et leur durée de vie plus longue, les LED sont de plus en plus utilisées pour l’éclairage, et particulièrement depuis ces dernières années, pour l’éclairage public. Toutefois, le spectre d’émission d’une LED diffère de celui d’une ampoule à incandescence ou à décharge, avec notamment des longueurs d’onde dont l’amplitude est plus élevée dans le domaine du bleu. Il a été démontré que ces longueurs d’onde bleues réduisent la sécrétion de mélatonine, une hormone qui, en plus de ses propriétés anti-oxydantes et anti- cancérigènes, permet de réguler l’horloge biologique du corps humain. La carence de mélatonine peut provoquer des états de fatigue et de stress, pouvant conduire dans certains cas à la dépression. Les longueurs d’onde rouges et proche-IR issues d’éclairages LED ou incandescent ont également des effets négatifs sur l’environnement, puisqu’elles perturbent les cycles de la végétation, comme la photosynthèse. Ces problèmes de santé publique sont connus des autorités, si bien qu’elles imposent des normes pour réduire l’émission de longueurs d’onde bleue, rouge et proche-IR issues de l’éclairage public (ex. norme BNQ 4930-100 au Québec). Dans ce projet, nous proposons des filtres interférentiels permettant d’éliminer les longueurs d’onde nuisibles issues d’un éclairage LED, sans impacter la qualité et l’efficacité de cet éclairage. En utilisant la technique de dépôt PECVD (Plasma Enhanced Chemical Vapor Deposition), nous avons développé des matériaux optiques innovants qui permettent de réaliser des filtres efficaces, simples et à faible coût.