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In this thesis, the leakage-mechanism after O2-plasma treatments was investigated. And the mechanism is transformed from Schottky emission into ionic conduction due to moisture uptake after porous silica film undergoes O2 plasma ashing. Besides, CMP process can to recover the damaged films by removed the degraded parts. From the result, we know that O2 plasma causing the bulky damage. Finally, the resistance of metal penetration of O2 plasma treated POSG is performed by utilizing BTS test. It was found that the moisture uptake in POSG films assisting metals in ionization process. Then, the penetrated metal ions in POSG film causes the leaky characters degraded.

Abstract As ULSI circuits are scaled down to deep submicron regime, interconnect delay becomes increasingly dominant over intrinsic gate delay. To reduce the RC delay time, many low dielectric constant materials have been developed. One of the most promising low-k materials is siloxane-based hydrogen silsesquioxane (HSQ) having the general formula (HSiO3/2)2n, n=2, 3, etc. available as Flowable Oxide (FOx). But low mechanical strength is the problem of HSQ. In order to modify the material composition and mechanical intensity of HSQ, a novel siloxane-based inorganic spin-on material Modified-HSQ has been developed for intermetal dielectric applications. In this thesis, the Intrinsic Properties of M-HSQ was investigated. And the effect of H2, O2 plasma treatment was investigated. Besides, In order to avoid the damage when remove the PR, to achieve small linewidth and reduce linewidth fluctuations. We employed E-Beam lithography to pattern the M-HSQ film. The leakage current of M-HSQ film by E-Beam curing is lower than film by conventional process.

As integrated circuits (ICs) are scaled down to deep submicron regime, interconnect delay becomes increasingly dominant over intrinsic gate delay. To solve the issue, two realistic methods are accepted popularly. On the one hand we use copper as the conductor for multilevel interconnects to decrease the resistance part of the RC delay. On the other hand we should reduce the coupling capacitance between the metal lines and this requires a low dielectric constant material. However, some difficulties come up in integrating low-k material with copper wires, including dielectric integrity and high diffusivity of copper ions. In order to prevent copper from penetrating into dielectric material under high electric fields and operation temperature, barrier dielectric have been developed to enhance resistance against copper drift. Silicon carbide (SixCy) with lower dielectric constant (k=4~5) is a promising barrier dielectric material to replace typically used silicon nitride (SixNy), (k~8). In this thesis, we will discuss the basic material properties of silicon carbide and the issues which will meet in process integration and actual working such as thermal cycles and operating under an electric field and a high temperature environment simultaneously. We investigated the conduction mechanism of the leakage current and tried to extract the physical parameters among it. In addition, the electrical properties of Silicon carbide at low temperature were also an important part of our research. Finally, we proposed some reasonable models to demonstrate the phenomenon and results we observed.

Periodic mesoporous material is a class of solids that possess periodically ordered pores with sizes of 2–50 nm. After a brief introduction to the synthesis, structure, property and function of periodic mesoporous materials in general in Chapter 1, a specific type of periodic mesoporous material, periodic mesoporous organosilica (PMO), is examined in detail in Chapter 2. Chapter 3 and Chapter 4 focus on the application of periodic mesoporous organosilica as low-dielectric-constant (low-k) insulating materials on semiconductor microprocessors. Specifically, Chapter 3 introduces a vapor-phase delivery technique, vacuum-assisted aerosol deposition, for the synthesis of PMO thin films; Chapter 4 studies one property crucial for the application of low-k PMO in detail—hydrophobicity. The focus of Chapter 5 turns to a novel sandwich-structured nanocomposite made of periodic mesoporous silica and graphene oxide. In Chapter 6, progress towards the synthesis of periodic mesoporous quartz is summarized. A conclusion and an outlook are given in Chapter 7.

Periodic mesoporous material is a class of solids that possess periodically ordered pores with sizes of 2–50 nm. After a brief introduction to the synthesis, structure, property and function of periodic mesoporous materials in general in Chapter 1, a specific type of periodic mesoporous material, periodic mesoporous organosilica (PMO), is examined in detail in Chapter 2. Chapter 3 and Chapter 4 focus on the application of periodic mesoporous organosilica as low-dielectric-constant (low-k) insulating materials on semiconductor microprocessors. Specifically, Chapter 3 introduces a vapor-phase delivery technique, vacuum-assisted aerosol deposition, for the synthesis of PMO thin films; Chapter 4 studies one property crucial for the application of low-k PMO in detail—hydrophobicity. The focus of Chapter 5 turns to a novel sandwich-structured nanocomposite made of periodic mesoporous silica and graphene oxide. In Chapter 6, progress towards the synthesis of periodic mesoporous quartz is summarized. A conclusion and an outlook are given in Chapter 7.