In order to construct the integrated circuit with high efficiency, the size of the semiconductor devices becomes smaller and smaller. The surface of the chip is unable to offer enough area for devices interconnecting, that the Ultra Large Scale Integration (ULSI) has to adopt the construction of multilayer metal conductor line, and to decrease it¡¦s connects. However, the RC delay time becomes a main issue to limiting semiconductor speed when the electron signal was transferred between two metal connects. In order to solve the problem of RC delay, and to lower resistivity, copper (1.7 £g£[-cm) is applied instead of Aluminum (2.7 £g£[-cm) at present. In additation, to lower the capacitance, the low-k material has taken place SiO for reducing the electric capacity. In this work, the capacitance and current of MIM(Metal-Insulator-Metal) of interconnecting circuit were investigated under bending stress. SiOC of OSG (Organic silicate glass) layer has applied to a MIM structure. In order to apply the strain in devices, the device was bended to a fixed curvature for compressed and tensile stress. By bending the device, the capacitance and leakage current I-V & C-V were analyzed and compared with the unstressed SAMPLE of I-V and C-V at high temperature, too. The result reveals both of Schottky and Poole-Frenkel conduction mechanism existing in device under a high electric field of 1800 V/cm1/2, which indicates the theoretical treatment is unappropriate for the interpretation of the leakage current mechanism.

Poly-p-xylylene is a basic polymer of parylene family. It was discovered in 50s of the 20th century. In practical applications, there are used several derivates. Most of them are discussed in this thesis. Poly-p-xylylene has many utility properties, like barrier, thermal and mechanical properties. It can be used for conservation and protection of electronic equipments, medical tools and devices or museum exhibits. The most important property of parylene is its low dielectric constant which enables parylene to have good insulating properties in form of very thin layer. The most common precursor used for parylene coatings by Chemical Vapor Deposition (CVD) is [2,2]paracyclophane. Special device invented for this process was described in this thesis, including every part and assembly. The main aim of this thesis was to test properties of thin parylene layers on metal samples. High degree of polymer crystallinity was confirmed by confocal laser microscopy and optical microscopy in the polarized light measurements. Problems in the conventional method of production of parylene layers were found during the measurement of thickness of layers. Purity of deposited films was determined using Infrared spectroscopy (IR). Parylene barrier properties were quantified by the measurement of Oxygen Transmission Rate through a layer deposited on the surface of PP foil. Because the research has been mainly focused on protection of museum exhibits, the corrosion resistance test is the most important. Metal samples with thin parylene film were compared to samples with conventional restoration coating. The samples with parylene protection were slowly corroded by point corrosion. In contrast to them, the samples conserved by conventional restoration method were almost destroyed by corrosion.