The design, simulation, and initial fabrication of a novel ultra-compact 2x2 silicon multimode-interference device evanescently coupled to a dual germanium metal-semiconductor-metal (MSM) photodetector is presented. For operation at the standard telecom wavelength of 1.5 µm, the simulations demonstrate high-speed operation at 30 GHz, low dark current in the nanoamp range, and external quantum efficiency of 80%. Error analysis was performed for possible tilt error introduced by hybrid integration of the MSM layer on top of the MMI waveguides by use of surface mount technology (SMT) and direct wafer bonding.

Success of total hip replacements is well reported however, failures as a result of wear processes and the biological response to these products continue to challenge the orthopaedic community. Lately, corrosion of metal surfaces as well as wear particles have seen particular interest with elevated blood cobalt levels widely reported in patients receiving metal-on-metal (MoM) hip replacements. Some instances have also reported this in patients with metal-on-polyethylene (MoP) components and these corrosion products are believed to contribute to hypersensitivity reactions reported. This thesis considers wear and cobalt release in MoP and MoM hip bearings tested under standard and challenging hip simulator conditions and includes an exploration of novel bearing coatings to reduce cobalt release. The incorporation of silver into these coatings may be sufficient to produce an antibacterial response, reducing the risk of mid-term infections, another reported cause of failure. Polyethylene wear was low under standard and clinically relevant adverse conditions in 28mm and 52 mm diameter MoP bearings (less than 35 mm3/mc). Cobalt release was measurable in 28 mm diameter MoP bearings (51 ppb/mc) with higher levels produced in large 52 mm diameters (123 ppb/mc), the first time this has been reported, although cobalt release was substantially less than that observed in MoM bearings (6909 ppb/mc). Alumina abrasives introduced in the lubricant substantially damaged MoP bearings, increasing the cobalt release to 70,690 ppb after 1 mc, greater than found after edge loaded MoM bearings (19,240 ppb). The removal of these particles still produced elevated cobalt levels compared to standard conditions and increased polyethylene wear to 435 mm3/mc. A chromium nitride (CrN) coating in MoP bearings was resistant to this abrasive damage showing no delamination in the coating, with negligible cobalt released after 7.04 mc (153 ppb) and maintained a polyethylene wear rate below 20 mm3/mc. Silver CrN coatings on both bearing surfaces of MoM components prevented cobalt release under standard conditions, with silver release after 0.17 mc up to 3,720 ppb in high silver surface coatings, although the wear was relatively high (5.24 mm3/mc). A silver CrN coating with a low concentration of silver at the surface reduced wear and was resistant to 5 mc of edge loading. It generated 241 ppb of cobalt and maintained comparable steady state wear rates (0.65 mm3/mc) to the uncoated metal while releasing 18,786 ppb silver which may be sufficient to be an effective anti-microbial agent. These coatings may provide potential clinical benefits in MoP and MoM bearings by reducing both wear and cobalt release in ideal and adverse conditions. There may also be beneficial wear products in the form of silver, although further testing of optimised coatings is required.

Ce travail porte sur la réalisation de dispositifs quantiques fonctionnant en régime de couplage fort entre une excitation d'un gaz d'électrons dans un puits quantique semiconducteur et un mode de cavité dans le moyen infra- rouge. Les quasi-particules issues de ce couplage lumière-matière sont appelées "polaritons intersousbande". La première partie de ce manuscrit est consacrée à l'étude d'un dis- positif électroluminescent basé sur une structure à cascade quantique in- sérée dans une microcavité planaire. Par une analyse détaillée des spectres d'électroluminescence à différents voltages, je démontre que les états de po- laritons sont peuplés de façon résonante, à une énergie qui dépend du voltage appliqué à la structure. Les résultats expérimentaux sont analysés et in- terprétés à l'aide d'un modèle reliant les spectres d'électroluminescence aux propriétés de l'injecteur de la structure à cascade. Pour augmenter la sélectivité de l'injection et observer ainsi une exaltation de l'émission spontanée, un nouveau type de cavité est développé dans la sec- onde partie de ce travail. Il s'agit d'une cavité basée sur un confinement plas- monique, dans laquelle la lumière est confinée entre deux plans métalliques, dans une épaisseur très inférieure à la longueur d'onde. Le miroir supérieur est façonné en réseau. L'influence des différents paramètres du réseau est étudiée et deux régimes sont mis en évidence: un régime où le mode de cavité se couple à un mode de plasmon de surface et un régime où le mode de cavité ne présente pas de dispersion en énergie. En insérant des puits quantiques dopés dans une cavité de ce deuxième type, les régimes de couplage fort puis de couplage ultra-fort lumière-matière sont démontrés jusqu'à température ambiante. La valeur importante du dédoublement de Rabi et la forte densité d'états polaritoniques obtenues dans ce type de cavité en font un candidat très prometteur pour la réalisation de dispositifs électroluminescents infrarouges de grande efficacité radiative et fonctionnant sans inversion de population.

Nanostructured materials are materials consisting of nanoparticulate building blocks on the scale of nanometers (i.e. 10-9 m). Composition, crystallinity and morphology can enhance or even induce new properties of the materials, which are desirable for todays and future technological applications. In this work, we have shown new strategies to synthesise metal oxide and metal nitride nanomaterials. The first part of the work deals with the study of nonaqueous synthesis of metal oxide nanoparticles. We succeeded in the synthesis of In2O3 nanopartcles where we could clearly influence the morphology by varying the type of the precursors and the solvents; of ZnO mesocrystals by using acetonitrile as a solvent; of transition metal oxides (Nb2O5, Ta2O5 and HfO2) that are particularly hard to obtain on the nanoscale and other technologically important materials. Solvothermal synthesis however is not restricted to formation of oxide materials only. In the second part we show examples of nonaqueous, solvothermal reactions of metal nitrides, but the main focus lies on the investigation of the influence of different morphologies of metal oxide precursors on the formation of the metal nitride nanoparticles. In spite of various reports, the number and variety of nanocrystalline metal nitrides is marginally small by comparison to metal oxides; hence preformed metal oxides as precursors for the preparation of metal nitrides are a logical choice. By reacting oxide nanoparticles with cyanamide, urea or melamine, at temperatures of 800 to 900 °C under nitrogen flow metal nitrides could be obtained. We studied in detail the influence of the starting material and realized that size, crystallinity, type of nitrogen source and temperature play the most important role. We have managed to propose and verify a dissolution-recrystallisation model as the formation mechanism. Furthermore we could show that the initial morphology of the oxides could be retained when ammonia flow was used instead. / Nanostrukturierte Materialien sind Materialien, die aus nanopartikulären Baueinheiten in der Größenordnung von Nanonmetern (d.h. 10-9 m) bestehen. Zusammensetzung, Kristallinität und Morphologie können die natürlichen Eigenschaften dieser Materialien verbessern oder zusätzliche Eigenschaften erzeugen, die für heutige und zukünftige Anwendungen und Verfahren wünschenswert sind. In dieser Arbeit präsentieren wir neue Strategien zur Synthese von Nanopartikeln der Metaloxide und Metalnitride. Im einführenden Teil wird die nichtwässrige Synthese von Metaloxidnanopartikeln beschrieben. Uns gelang die Darstellung von In2O3 Nanopartikeln, deren Größe und Form wir durch die Wahl des Prekursors und des Lösemittels deutlich beeinflussen konnten; von ZnO Mesokristallen durch den Einsatz von Acetonitril als Lösemittel; von Übergangsmetalloxiden (Nb2O5, Ta2O5 and HfO2), die besonders schwer im Nanomaßstab zu erhalten sind und von anderen, technisch relevanten Materialien. Die Möglichkeiten der solvothermalen Synthese sind nicht mit der Darstellung von Oxidmaterialen erschöpft. Im zweiten Teil zeigen wir einige Beispiele nichtwässriger, solvothermaler Synthese von Metalnitriden auf; das Hauptaugenmerk liegt aber auf einer Betrachtung der Einflüsse der Morphologie von Metaloxidnanopartikelprekursoren auf die Bildung der Metalnitridnanopartikel. Die Anzahl und Vielfalt bekannter nanokristalliner Metalnitride ist verschwindend klein im Vergleich zu den Metaloxiden, die in der Fachliteratur etabliert sind und demzufolge einen reichen Baukasten an Prekursoren zur Darstellung von Metalnitriden liefern. Durch die Reaktion von Metaloxidnanopartikeln mit Cyanamid, Urea oder Melamine bei Temperaturen von 800 bis 900 °C unter Stickstofffluss konnten Metalnitride erhalten werden. Eine detaillierte Studie der Reaktionsbedingungen und des Reaktionsablaufs zeigte auf, dass Größe und Kristallinität der Metaloxide, die Art der Stickstoffquelle und die Temperatur die entscheidenden Faktoren sind und legte eine Auflösungs-Rekristallisation als Modelmechanismus dieser Art Reaktion nahe. Darüber hinaus konnte gezeigt worden, dass die anfängliche Morphologie des Oxids unter einem Ammoniafluss beibehalten werden konnte.

Thesis (M.S.)--Mississippi State University. Department of Mechanical Engineering. / Title from title screen. Includes bibliographical references.

No description available.

n-type binary compound semiconductors such as InN, InAs, or In2O3 are especial because the branch-point energy or charge neutrality level lies within the conduction band. Their tendency to form a surface electron accumulation layer prevents the formation of rectifying Schottky contacts. Utilizing a reactive sputtering process in an oxygen-containing atmosphere, we demonstrate Schottky barrier diodes on indium oxide thin films with rectifying properties being sufficient for space charge layer spectroscopy. Conventional non-reactive sputtering resulted in ohmic contacts. We compare the rectification of Pt, Pd, and Au Schottky contacts on In2O3 and discuss temperature-dependent current-voltage characteristics of Pt/In2O3 in detail. The results substantiate the picture of oxygen vacancies being the source of electrons accumulating at the surface, however, the position of the charge neutrality level and/or the prediction of Schottky barrier heights from it are questioned.

The focus of this thesis is on radio frequency magnetron sputtered aluminum oxide thin films developed for use as the gate dielectric for organic thin film transistors. The effect of top metal electrodes on the electrical characteristics of aluminum oxide metal-insulator-metal capacitors has been studied to determine an optimum material combination for minimizing the leakage current, while maximizing the breakdown field. The leakage current and breakdown characteristics were observed to have a strong dependence on the top electrode material. Devices with Al top electrodes exhibited significantly higher breakdown voltages compared to devices with Au, Ni, Cu and Ag electrodes. Introducing an Al diffusion barrier dramatically increased the breakdown field and reduced the leakage current for capacitors with Ag, Au and Cu top electrodes. The electrical characteristics were found to relate well to material properties, of the contacting metals, such as ionization potential and diffusion coefficient.

The focus of this thesis is on radio frequency magnetron sputtered aluminum oxide thin films developed for use as the gate dielectric for organic thin film transistors. The effect of top metal electrodes on the electrical characteristics of aluminum oxide metal-insulator-metal capacitors has been studied to determine an optimum material combination for minimizing the leakage current, while maximizing the breakdown field. The leakage current and breakdown characteristics were observed to have a strong dependence on the top electrode material. Devices with Al top electrodes exhibited significantly higher breakdown voltages compared to devices with Au, Ni, Cu and Ag electrodes. Introducing an Al diffusion barrier dramatically increased the breakdown field and reduced the leakage current for capacitors with Ag, Au and Cu top electrodes. The electrical characteristics were found to relate well to material properties, of the contacting metals, such as ionization potential and diffusion coefficient.

Thesis (Ph. D.)--Ohio State University, 2007. / Title from first page of PDF file. Includes bibliographical references (p. 265-278).