Spelling suggestions: "subject:"metalloxide"" "subject:"metaloxide""
71 |
Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETsKrishnamohan, Tejas. January 2006 (has links) (PDF)
Thesis (Ph.D.)--Stanford University, 2006. / Adviser: Krishna C. Saraswat. Includes bibliographical references (p. 160-177)
|
72 |
Semiclassical Monte Carlo simulation of nano-scaled semiconductor devices28 August 2008 (has links)
Not available
|
73 |
Novel channel materials for Si based MOS devices: Ge, strained Si and hybrid crystal orientations28 August 2008 (has links)
Not available
|
74 |
Time domain CMOS image sensor : from photodetection to on-chip image processing /Chen, Shoushun. January 2007 (has links)
Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references (leaves 135-145). Also available in electronic version.
|
75 |
Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture /Al-Ahmadi, Ahmad Aziz. January 2006 (has links)
Thesis (Ph.D.)--Ohio University, June, 2006. / Title from PDF t.p. Includes bibliographical references (p. [69]-[78])
|
76 |
Current-feedthrough cancellation techniques in switched-current circuitsLao, Paul A. 06 August 1990 (has links)
Graduation date: 1991
|
77 |
Fully-differential current-mode CMOS circuits and applicationsZele, Rajesh H. 02 August 1990 (has links)
With increasing interest in current-mode analogue processing due to its high
performance properties such as speed, bandwidth and accuracy compared to voltage-mode
processing, new current-mode alternatives to various conventional circuit designs are
appearing. In this report, a novel circuit design to construct a fully-differential current-mode
operational amplifier ( OP-AMP ) is suggested. A standard CMOS process and a 5
volt power supply are utilized. Simulation results using SPICE are presented. For the
current-amplifier, a highly linear behavior ( THD 0.02% ) and an excellent frequency
response ( 10 MHz ) were observed. Using this new differential OP-AMP topology,
fully-differential switched-current delay cell and an integrator circuit were also developed
successfully. / Graduation date: 1991
|
78 |
Comparison and analysis of current-mode logic circuits with differential and static CMOSShrivastava, Manu B. 07 February 1994 (has links)
This thesis describes the analysis and comparison of Folded Source-Coupled
Logic (FSCL) with standard static CMOS, cascode voltage-switch logic and differential
split-level logic gates. The advantages of FSCL are low switching noise and
high operating speed. The effect of voltage and device scaling on these topologies is
evaluated in terms of average delay, power dissipation at maximum frequency,
power-delay-product and current spike noise. Several two-summand adders are
designed and simulated using MOSIS 1-μm CMOS process parameters and evaluations
are performed in terms of area, delay, noise and power dissipation. / Graduation date: 1994
|
79 |
Characterization of oxygen and carbon effects in silicon material and MOSFET devicesHaddad, Homayoon 20 February 1990 (has links)
Graduation date: 1990
|
80 |
High frequency voltage controlled ring oscillators in standard CMOSEken, Yalcin Alper 07 June 2004 (has links)
No description available.
|
Page generated in 0.0467 seconds