This Thesis describes the development of a cost-effective process for patterning nanoscale metal antenna arrays. Soft ultraviolet (UV) Nanoimprint Lithography (NIL) into bilayer resist was chosen since it enables repeatable large-scale replication of nanoscale patterns with good lift-off properties using a simple low-cost process. Nanofabrication often involves the use of Electron Beam Lithography (EBL) which enables the definition of nanoscale patterns on small sample regions, typically < 1 mm 2 . However its sequential nature makes the large scale production of nanostructured substrates using EBL cost-prohibitive. NIL is a pattern replication method that can reproduce nanoscale patterns in a parallel fashion, allowing the low-cost and rapid production of a large number of nanopatterned samples based on a single nanostructured master mold. Standard NIL replicates patterns by pressing a nanostructured hard mold into a soft resist layer on a substrate resulting in exposed substrate regions, followed by an optional Reactive Ion Etching (RIE) step and the subsequent deposition of e.g. metal onto the exposed substrate area. However, non-vertical sidewalls of the features in the resist layer resulting from an imperfect hard mold, from reflow of the resist layer, or from isotropic etching in the RIE step iii may cause imperfect lift-off. To overcome this problem, a bilayer resist method can be used. Using stacked resist layers with different etch rates, undercut structures can be obtained after the RIE step, allowing for easy lift-off even when using a mold with non-vertical sidewalls. Experiments were carried out using a nanostructured negative SiO2 master mold. Various material combinations and processing methods were explored. The negative master mold was transferred to a positive soft mold, leaving the original master mold unaltered. The soft mold consisted of a 5 m thick top Poly(methyl methacrylate) (PMMA), or Polyvinyl alcohol (PVA) layer, a 1.5 mm thick Polydimethylsiloxane (PDMS) buffer layer, and a glass supporting substrate. The soft mold was pressed into a bilayer of 300 nm PMMA and 350 nm of silicon based UV-curable resist that was spin-coated onto a glass slide, and cured using UV radiation. The imprinted patterns were etched using RIE, exposing the substrate, followed by metal deposition and lift-off. The experiments show that the use of soft molds enables successful pattern transfer even in the presence of small dust particles between the mold and the resist layer. Feature sizes down to 280 nm were replicated successfully

Les capteurs d'image connaissent un regain d'intérêt grâce à la croissance remarquable du secteur de la communication sans fil, et leurs fonctionnalités tendent à se diversifier. Plus particulièrement, une application récente connue sous le nom de capteur de luminosité ambiante (ALS de l'acronyme anglais) est apparue dans le but de proposer un ajustement intelligent du rétro-éclairage dans les appareils mobiles pourvus d'écrans. Les avancées technologiques ont permis la fabrication de smartphones toujours plus fins, ce qui impose une contrainte importante sur la hauteur des capteurs de lumière. Cette réduction d'épaisseur peut être réalisée grâce à l'utilisation de filtres spectraux innovants, plus fins et entièrement sur puce. Dans cette thèse, nous présentons l'étude et la démonstration de filtres plasmoniques adaptés à une intégration dans des produits ALS commerciaux. Les structures de filtrage les plus performantes sont identifiées avec une importance particulière accordée à la stabilité des filtres par rapport à l'angle d'incidence de la lumière et à son état de polarisation. Des schémas d'intégration compatibles CMOS et respectant les contraintes d'une fabrication à l'échelle du wafer sont proposés. Les résonances de plasmon sont étudiées afin d'atteindre des propriétés optiques optimales et une méthodologie spécifique à partir d'un véritable cahier des charges client a été utilisée pour obtenir des performances ALS optimisées. La robustesse des filtres plasmoniques aux dispersions de procédé est analysée à travers l'identification et la modélisation des imprécisions et des défauts typiques d'une fabrication sur wafer 300 mm. A la lumière de ces travaux, une démonstration expérimentale de filtres ALS plasmoniques est réalisée avec le développement d'une intégration à l'échelle du wafer et avec la caractérisation et l'évaluation des performances des structures fabriquées afin de valider la solution plasmonique. / Image sensors have experienced a renewed interest with the prominent market growth of wireless communication, together with a diversification of functionalities. In particular, a recent application known as Ambient Light Sensing (ALS) has emerged for a smarter screen backlight management of display-based handheld devices. Technological progress has led to the fabrication of thinner handsets, which imposes a severe constraint on light sensors' heights. This thickness reduction can be achieved with the use of an innovative, thinnest and entirely on-chip spectral filter. In this work, we present the investigation and the demonstration of plasmonic filters aimed for commercial ALS products. The most-efficient filtering structures are identified with strong emphasis on the stability with respect to the light angle of incidence and polarization state. Integration schemes are proposed according to CMOS compatibility and wafer-scale fabrication concerns. Plasmon resonances are studied to reach optimal optical properties and a dedicated methodology was used to propose optimized ALS performance based on actual customers' specifications. The robustness of plasmonic filters to process dispersions is addressed through the identification and the simulation of typical 300 mm fabrication inaccuracies and defects. In the light of these studies, an experimental demonstration of ALS plasmonic filters is performed with the development of a wafer-level integration and with the characterization and performance evaluation of the fabricated structures to validate the plasmonic solution.