Solar thermal energy is emerging as an important source of renewable energy for meeting the ever-increasing energy requirements of the world. Solar selective coatings are known to enhance the efficiency of the photo thermal energy conversion. An ideal solar selective coating has zero reflectance in the solar spectrum region (i.e., 0.3-2.5 µm) and 100% reflectance in the infrared (IR) region (i.e. 2.5-50 µm). In this thesis, novel carbon nanotubes (CNT) and graphene based absorbers have been developed for photo thermal applications. Carbon nanotubes have good optical properties (i.e., α and ε close to 1), high aspect ratios (> 150), high surface area (470 m2/g) and high thermal conductivity (> 3000 W/mK), which enable rapid heat transfer from the CNTs to the substrates. Similarly, graphene also exhibits high transmittance (97%), low reflectance, high thermal conductivity (5000 W/mK) and high oxidation resistance behaviour. The major drawback of using CNTs for photothermal applications is that it exhibits poor spectral selectivity (i.e., α/ε = 1). In other words, it acts as a blackbody absorber. On the other hand, graphene exhibits poor intrinsic absorption behaviour (α - 2.3%) in a broad wavelength range (UV-Near IR). The main objective of the present study is to develop CNT and graphene based absorbers for photothermal conversion applications. The growth of CNT and graphene was carried out using chemical vapour deposition and sputtering techniques. An absorber-reflector tandem concept was used to develop the CNT based tandem absorber (Ti/Al2O3/Co/CNT). The transition from blackbody absorber to solar selective absorber was achieved by varying the CNT thicknesses and by using a suitable underlying absorber (Ti/Al2O3). A simple multilayer heat mirror concept was used to develop the graphene based multilayer absorber (SiO2/graphene/Cu/graphene). The transition from high transmitance to high absorptance was achieved by varying the Cu thickness. The refractive indices and the extinction coefficients of Ti/Al2O3, AlTiO and graphene samples were determined by the phase-modulated spectroscopic ellipsometric technique. Finally, the optical properties (i.e., absorptance and the emittance) of the CNT and graphene based absorbers were investigated. Chapter 1 gives a brief introduction about solar thermal energy, spectrally selective coating and photothermal conversion. The different types of absorbers used to achieve the spectral selectivity have also been discussed shortly. A brief description about the carbon-based materials/allotropes and their properties are outlined. The properties of carbon nanotubes and graphene which are the 1-D and 2-D allotropes of carbon, respectively are tabulated. A detailed literature survey was carried out in order to identify the potential candidates for the photothermal conversion applications. The objectives and the scope of the thesis are also discussed in this chapter. Chapter 2 discusses the deposition and characterization techniques used for the growth and the study of 1-D and 2-D carbon nanostructures. Atmospheric pressure chemical vapour deposition (CVD) and hot filament CVD techniques were used to grow CNT and graphene, respectively. The magnetron sputtering technique was used for the growth of ‘Ti’, ‘Al2O3’ and Co layers which were needed to grow the CNT based tandem absorber on stainless steel (SS) substrates. The important characterization techniques used to examine various properties of the 1-D and 2-D carbon nanostructures include: X-ray diffraction, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), phase modulated ellipsometry, UV-VIS-NIR spectrophotometer, Fourier-infrared spectroscopy (FTIR), micro-Raman spectroscopy and solar spectrum reflectometer and emissometer. Chapter 3 describes the design and development of Ti/Al2O3 coating for the growth of CNT-based tandem absorber on SS substrates. The power densities of the aluminum and titanium targets and the oxygen flow rates were optimized to deposit the Ti/Al2O3 coatings. The optimized Ti/Al2O3 coating with a Co catalyst on top was used as an underlying substrate to grow the CNT-based tandem absorber at 800°C in Ar+H2 atmosphere (i.e., CNT/Co/Al2O3/Ti/SS). The formation of aluminum titanium oxide (AlTiO) was observed during the CNT growth process and this layer enhances the optical properties of the CNT based tandem absorber. The optical constants of Ti, Al2O3 and AlTiO coatings were measured using phase modulated spectroscopic ellipsometry in the wavelength range of 300-900 nm. The experimentally measured ellipsometric parameters have been fitted with the simulated spectra using the Tauc-Lorentz model for generating the dispersion of the optical constants of the Al2O3 and the AlTiO layers. The Ti and Al2O3 layer thicknesses play a major role in the design of the CNT based tandem absorber with good optical properties. Chapter 4 describes the synthesis and characterization of the CNT based tandem absorber (Ti/AlTiO/CoO/CNTs) deposited on SS substrates. CNTs at different thicknesses were grown on Ti/AlTiO/CoO coated SS substrates using atmospheric CVD at various growth durations. The transition from blackbody absorber to solar selective absorber was achieved by varying the thicknesses of the CNTs and by suitably designing the bottom tandem absorber. At thicknesses > 10 µm, the CNT forest acts as near-perfect blackbody absorber, whereas, at thicknesses ≤ 0.36 µm, the IR reflectance of the coating increases (i.e., ε = 0.20) with slight decrease in the absorptance (i.e., α = 0.95). A spectral selectivity (α/ε) of 4.75 has been achieved for the 0.36 µm-thick CNTs grown on SS/Ti/AlTiO/CoO tandem absorber. Chapter 5 discusses the growth of graphene on polycrystalline copper (Cu) foils (1 cm × 1 cm) using hot filament CVD. The roles of the process parameters such as gas flow rates (methane and hydrogen), growth temperatures (filament and substrate) and durations on the growth of graphene were studied. The process parameters were also optimized to grow monolayer, bilayer and multilayer graphene in a controlled manner and the growth mechanism was deduced from the experimental results. The presence of graphene on Cu foils was confirmed using XPS, micro-Raman spectroscopy, FESEM and TEM techniques. The FESEM data clearly confirmed that graphene starts nucleating as hexagonal islands which later evolves into dendritic lobe shaped islands with an increase in the supersaturation. The TEM data substantiated further the growth of monolayer, bilayer and multilayer graphene. The intensity of 2D and G peak ratio (i.e., I2D/IG = 2) confirmed the presence of the monolayer graphene and the absence of the ‘D’ peak in the Raman spectrum indicated the high purity of graphene grown on Cu foils. The results show that the polycrystalline morphology of the copper foil has negligible effect on the growth of monolayer graphene. In Chapter 6, the design and development of graphene/Cu/graphene multilayer absorber and the study of its optical properties are discussed. The multilayer graphene grown on Cu foils has been transferred on quartz and SiO2 substrates in order to fabricate the graphene/Cu/graphene multilayer absorber. The sputtering technique was used to deposit copper on top of graphene/quartz substrates. The uniformity of the transferred multilayer graphene films was confirmed using Raman mapping. A simple multilayer heat mirror concept was used to develop the graphene/Cu/graphene absorber on quartz substrates and the transition from high transmittance to high absorptance was achieved. In order to further enhance the absorption, the graphene/Cu/graphene multilayer coating was fabricated on SiO2 substrates. The thickness of the Cu layer plays a major role in creating destructive interference, which results in high absorptance and low emittance. A high specular absorptance of 0.91 and emittance of 0.22 was achieved for the SiO2 graphene/Cu/graphene multilayer absorber. The specular reflectance of the multilayer absorber coatings was measured using the universal reflectance accessory of the UV-VIS-NIR spectrophotometer. Chapter 7 summarizes the major findings of the present investigation and also suggests future aspects for experimentation and analysis. The results obtained from the present work clearly indicate that both CNT and graphene based absorbers can be used as potential candidates for photothermal applications. In particular, the CNT based tandem absorber can be used for high temperature solar thermal applications and the graphene based multilayer absorber finds applications in the area of photodetectors and optical broadband modulators.

No / The ESA/Roscosmos ExoMars rover will be launched in 2018. The primary aim of the mission will be to find evidence of extinct or extant life by extracting samples from the subsurface of Mars. The rover will incorporate a drill that is capable of extracting cores from depths of up to 2 m, a Sample Preparation and Distribution System (SPDS) that will crush the core into small grains and a suite of analytical instruments. A key component of the analytical suite will be the Raman Laser Spectrometer (RLS) that will be used to probe the molecular and mineralogical composition of the samples. In this work we consider the capability of the proposed Raman spectrometer to detect reduced carbon (possibly associated with evidence for extinct life) and to identify the level of thermal alteration/maturity. The Raman analysis of 21 natural samples of shale (originating from regions exhibiting different levels of thermal maturity) is described and it is shown that reduced carbon levels as low as 0.08% can be readily detected. It is also demonstrated that the Raman spectra obtained with the instrument can be used to distinguish between samples exhibiting high and low levels of thermal maturity and that reduced carbon can be detected in samples exposed to significant levels of oxidation (as expected on the surface of Mars). (C) 2014 Published by Elsevier Ltd.

Lasers find a wide range of applications in many areas including photo-biology, photo-chemistry, materials processing, imaging and telecommunications. However, the practical use of such sources is often limited by the bulky nature of existing systems. By fabricating channel waveguides in solid-state laser-gain materials more compact laser systems can be designed and fabricated, providing user-friendly sources. Other advantages inherent in the use of waveguide gain media include the maintenance of high intensities over extended interaction lengths, reducing laser thresholds. This thesis presents the development of Yb:tungstate lasers operating around 1μm in waveguide geometries. An Yb:KY(WO₄)₂ planar waveguide laser grown by liquid phase epitaxy is demonstrated with output powers up to 190 mW and 76 % slope efficiency. This is similar to the performance from bulk lasers but in a very compact design. Excellent thresholds of only 40 mW absorbed pump power are realised. The propagation loss is found to be less than 0.1 dBcm⁻¹ and Q-switched operation is also demonstrated. Channel waveguides are fabricated in Yb:KGd(WO₄)₂ and Yb:KY(WO₄)₂ using ultrafast laser inscription. Several of these waveguides lase in compact monolithic cavities. A maximum output power of 18.6 mW is observed, with a propagation loss of ~2 dBcm⁻¹. By using a variety of writing conditions the optimum writing pulse energy is identified. Micro-spectroscopy experiments are performed to enable a fuller understanding of the induced crystal modification. Observations include frequency shifts of Raman lines which are attributed to densification of WO₂W bonds in the crystal. Yb:tungstate lasers can generate ultrashort pulses and some preliminary work is done to investigate the use of quantum dot devices as saturable absorbers. These are shown to have reduced saturation fluence compared to quantum well devices, making them particularly suitable for future integration with Yb:tungstate waveguides for the creation of ultrafast, compact and high repetition rate lasers.

The CdTe family members (in particular CdZnTe) remain the substrate of choice for epitaxial growth of HgCdTe for use in high performance infrared (IR) detectors and focal plane arrays. This is the case despite advances in the use of alternate substrate technologies such as buffered GaAs and GaAs on Si; these technologies, to date, have not reproducibly demonstrated device performance comparable to the arrays made in HgCdTe grown on CdZnTe and CdTe. The quality of CdTe family materials has improved significantly over the past several years and so the quality and reproducibility of IR detectors has improved along with them. It is clear, however, that CdTe family substrates still have a significant impact on the performance of HgCdTe devices and that further research is required to reduce the effects of substrate on these devices. Unlike silicon or gallium arsenide, it is very difficult to grow the large area single crystals of CdZnTe due to thermodynamic limitations. It has the lowest thermal conductivity among all semiconductors that makes it difficult to obtain planar solid-liquid interface, which is desirable for the growth of large area single crystals of CdZnTe. Due to its high ionicity and weak bonding, defects are easily incorporated during the growth. Also, it is well established that both the structural defects and impurity content of Hg1-xCdxTe epitaxial layers are strongly influenced by the quality of the substrates used in the epitaxial growth process. A substrate of poor structural quality will result in a poor substrate/layer interface from which defects will propagate into the epilayer. It is known that our focal plane arrays (FPAs) are backside illuminated, with the device connected to underlying silicon multiplexer, using a matrix of indium bumps. Thus the substrate should have high IR transmission to pass the radiation on to the detector for collection. High IR transmission requires chemically and electrically homogeneous crystals free from extraneous second phase particles. This objective is one of the most difficult thermodynamic and technological problems in the growth of CdTe and related alloys. The bulk CdZnTe crystals grown from melt suffer from the inherent disadvantage of accommodating tellurium precipitates because of high growth temperature and phase diagram limitations. These tellurium (Te) precipitates condense as cadmium vacancies and Te interstitials during the cooling process, which contribute to intrinsic point defects. Although extensive efforts have been made in the area of purification of the CdZnTe crystals by using 6N pure starting materials, still the high temperature melt growth leads to impurity pickup during the crystal growth process. This deviation in the stoichiometry, especially due to free carriers, impurities and second phase tellurium precipitates, play the major role in reducing the infrared transmission through the CdZnTe substrate material. Also they affect the device performance when used for detector applications. In this context a thorough investigation of the non-stoichiometry of the CdZnTe material is mandatory to improve the material quality. It is my endeavor in this respect to present in this thesis “optical and structural investigations of defects in CdZnTe (Zn~4%) crystals”. The present thesis has been organized into six chapters. Chapter 1: It presents an up to date comprehensive review of the defects in CdTe binary and CdZnTe ternary compound semiconductors. It includes an introduction to the ternary II-VI cadmium zinc telluride with potential device applications. Issues related to CdTe based substrates for infrared (IR) applications have been discussed. Growth as well as several material aspects like crystal structure, band structure, mechanical, thermal, optical and dielectric properties have been discussed in details. The chapter ends with the motivation and scope for the present thesis. Chapter 2 : Te precipitates were identified and characterized in CdZnTe (Zn ~ 4%) crystals using various physical characterization techniques and the results are presented in Chapter 2. X-ray diffraction rocking curve measurements were carried out on a series of samples to assess the overall crystalline quality of the as grown CdZnTe crystals, in conjunction with Fourier transform infrared (FTIR) absorption spectroscopy measurements to identify the presence of Te precipitates. Further, the CdZnTe samples having Te precipitates were systematically characterized using micro-Raman imaging technique. CdZnTe wafers grown in three and six zone furnaces using quartz and/or pyrolytic boron nitride (PBN) crucibles have been subjected to micro-Raman imaging to quantify and understand the nature of Te precipitates. It is well known that for the normal phase of Te precipitates, the Raman modes appear centered around 121 (A1), 141(E) /TO (CdTe) cm -1and a weak mode around 92 (E) cm -1 in CdZnTe indicating the presence of trigonal lattice of Te. Using the micro-Raman maps and taking the spatial distribution of the area ratio of 121 to 141 cm-1 Raman modes, the size and distribution of Te precipitates were estimated. A substantial reduction in Te precipitate size and an improvement in the IR transmission in the 2.2 – 5 µm IR window was observed in the CdZnTe crystals subjected to post growth annealing under Cd+Zn vapors at 650 oC for 6 hrs. Also it is shown that the samples grown in pyrolytic boron nitride (PBN) crucibles have shown an overall improvement in the crystalline quality and reduction in the Te precipitate size as compared to the samples grown in quartz crucibles. The possible reasons for these observations have been discussed in chapter 2. The presence of Te precipitates under high pressure phase was detected by the blueshift of the Raman bands that appear at 121 (A1) cm-1for a normal Te phase, indicating that these micro-Raman maps are basically the distribution of Te precipitates in different phases. NIR microscopy imaging has been carried out to further substantiate the presence of Te precipitates under high pressure phase and that of larger Te precipitates. The significance of micro-Raman imaging lies in quantifying and demonstrating the high pressure phase of Te precipitates in CdZnTe crystals in a non-destructive way. Also it is shown that the presence of Te precipitates lead to loss of useful signal in the 2.2 – 6 µm wavelength regions and hence are “deleterious” for substrate applications of CdZnTe crystals required for the growth and fabrication of HgCdTe detectors. Chapter 3: The effects of annealing and hydrogenation on the low temperature photoluminescence (PL) spectra of CdZnTe (Zn ~ 4%) crystals are reported in this chapter. It is shown that annealing at 600 oC for 12 hrs under Cd vapors has resulted in the disappearance of both C-A and DAP recombination features (attributed to singly ionized cadmium vacancy acceptors) observed in the 1.5 – 1.6 eV band edge region in the low temperature PL spectra of CdZnTe, confirming the origination of these bands from Cd vacancy defects. The presence of copper impurity has been identified by the appearance of the 1.616 (AoX) eV energy peak attributed to exciton bound to the neutral copper acceptor and the 1.469 eV band attributed to copper acceptor in the donor acceptor pair (DAP) recombinations. It is shown that, only annealing under Cd+Zn vapors at 650 oC for 6 hrs has resulted in the passivation of the 1.469 eV band and the mechanism has been explained invoking the Hume-Rothery rule. Passivation of the 1.469 eV band is significant, since CdZnTe substrate copper contamination was found to degrade HgCdTe epitaxial layer and hence the performance of HgCdTe infrared (IR) detectors. Also it shown that vacuum annealing has resulted in the introduction of a new defect band around 0.85 eV in the low temperature PL spectra of CdZnTe possibly due to the loss of Cd and/or Zn. Further, the effects of hydrogenation in passivating the defect bands observed in the low temperature PL spectra of the control CdZnTe crystals are discussed. Using micro-Raman imaging technique, it is shown that hydrogenation has resulted in the reduction in size and restoration of normal phase for Te precipitates, which otherwise were present under high pressure phase in CdZnTe crystals. It is shown that the net effect of hydrogenation is to improve the quality of CdZnTe crystals at low temperature (50 oC) as compared to the high Cd+Zn annealing temperature (650 oC) whose effect is only to reduce the size of Te precipitates. To further substantiate this an analysis of the temperature dependent resonance micro-Raman spectra recorded with 633 and 488 nm lasers has been made and it is shown that appearance of the multiple orders (up to 4 orders) of the CdTe like LO phonon modes and emergence of the ZnTe like LO phonon mode are clear indications of the improved quality of the hydrogenated CdZnTe crystals. Chapter 4: Manifestation of Fe2+and Fe3+charge states of Fe in undoped CdZnTe (Zn ~ 4 %) crystals grown in quartz crucibles by asymmetrical Bridgemann method and their respective optical and magnetic behaviors have been discussed in this chapter. Fe2+being optically active shows absorption around 2295 cm-1in the low temperature (T = 3 K) FTIR spectra, while Fe3+being magnetically active exhibits coexistence of para and ferromagnetic phases, as identified by low temperature electron spin resonance and supported independently by low temperature SQUID and AC susceptibility measurements. In the paramagnetic phase (TC ~ 4.8 K) the inverse of ac susceptibility follows the Curie-Weiss law. In the ferromagnetic phase (TC ~ 4.8 K) the thermal evolution of magnetization follows the well known Bloch’s T3/2 law. This is further supported by the appearance of hysteresis in the SQUID measurements at 2K below TC. Small coercive field of 10 Oe as estimated in the hysteresis suggests that the magnetic anisotropy is very small in these systems. Chapter 5: In this chapter, details of the indigenously developed laser beam induced current (LBIC) instrumentation have been presented. These include instrumental arrangement of the micro-mechanical system for raster scanning of defects in semicoductors and fabrication details of continuous flow liquid helium cryostat for low temperature LBIC measurements. Preliminary LBIC data recorded using this system have been shown to demonstrate the operability of the system. Chapter 6: This chapter includes a brief write-up summarizing the results and draws the attention for the possible future work. Appendix A: Here C++ programs for LBIC measurements are presented. Appendix B: Here the CAD diagrams for the full cross sectional view of the liquid helium cryostat consisting of “assembly liquid helium cryostat” and “part liquid helium cryostat” are attached.