The objectives of this thesis are to develop and validate laser ultrasonic inspection methods for on-line testing of microelectronic devices. Electronic packaging technologies such as flip chips and BGAs utilize solder bumps as electrical and mechanical connections. Since they are located hidden from view between the device and the substrate, defects such as cracks, voids, misalignments, and missing bumps are difficult to detect using non-destructive methods. Laser ultrasonic inspection is capable of detecting such defects by utilizing a high power laser pulse to induce vibrations in a microelectronic device while measuring the out of plane displacement using an interferometer. Quality can then be assessed by comparing the vibration response of a known-good device to the response of the sample under inspection. The main limitation with the implementation of laser ultrasonic inspection in manufacturing applications is the requirement to establish a known-good reference device utilizing other non-destructive methods. My work will focus on developing a method to inspect flip chip devices without requiring a previously established reference. The method will automatically examine measurement data from a large sample set to identify those devices which are most similar. The selected devices can then be utilized to compose a hybrid reference signal which can be used for comparison and defect detection. Current trends in the electronic packaging industry continue to drive toward increased solder bump density, making it increasingly difficult to generate strong ultrasonic signals in these stiffer devices. To overcome this difficulty, I propose a new excitation method which places the source of ultrasound at the inspection location for each test point on the device surface. This ensures that the same power is available for each inspection location while also increasing the signal to noise ratio. The hardware implementation of this method reduces the system complexity and required automation, which can significantly reduce equipment cost and inspection time. The implementation of the proposed excitation method in conjunction with the use of a hybrid reference signal for defect detection will improve the utility of the laser ultrasonic inspection technique to on-line inspection applications where no other non-destructive methods are currently available.

This thesis explores the technical feasibilty of creating a remote laboratory in the field of microelectronics fabrication. It also includes the evaluation of the developed laboratory as a teaching tool. / PhDElectronicEngineering

Thesis (M.S.)--State University of New York at Binghamton, Thomas J. Watson School of Engineering and Applied Science, Department of Systems Science and Industrial Engineering, 2007. / Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 1996. / eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves 146-154).

Thesis (M.A.) - Carleton University, 2007. / Includes bibliographical references (p. 59-60). Also available in electronic format on the Internet.

Thesis (M.S.)--San Jose State University, 1995. / Adviser: Guna S. Selvaduray. Includes bibliographical references.

Thesis (Ph. D.)--Mechanical Engineering, Georgia Institute of Technology, 2007. / Neu, Richard W., Committee Member ; Sanders, Thomas H. Jr., Committee Member ; Wong, C.P., Committee Member ; McDowell, David L., Committee Member ; Qu, Jianmin, Committee Chair.

Thesis (Ph. D.)--State University of New York at Binghamton, Thomas J. Watson School of Engineering and Applied Science, Department of Systems Science and Industrial Engineering, 2008. / Includes bibliographical references.

O sistema desenvolvido obteve boa resposta na detecção de modelos numéricos de tumores com dimensões a partir de 5mm, representada na localização adequada e determinação do tamanho obtidos por meio de simulações envolvendo os modelos dos blocos especificados. Como objetivo principal do trabalho será apresentado o projeto, fabricação e resultados de testes de um circuito integrado gerador de pulsos com o formato da derivada de quinta ordem do pulso de gaussiano (transmissor UWB) fabricado utilizando a tecnologia IBM 0.18 CMOS. Os blocos principais que formam o circuito gerador de pulso são: circuito gerador de onda quadrada, gerador de atrasos, detector de fase e etapa de saída (formador de pulso). O gerador de onda quadrada foi implementado a partir de um buffer de RF com um inversor na saída com casamento de impedância. O gerador de atrasos foi implementado a partir de uma cascata de inversores. O circuito detector de fase é composto por bloco n- dinâmico , n-latch e inversor estático para forma pulsos em alta velocidade. As dimensões dos transistores foram definidas de modo a obter característica adequada de um pulso Gaussiano de 5ª ordem, considerando especificações exigidas de Sistema de Detecção de Câncer de Mama. Foi implementado o leiaute em full Custom com dimensões mínimas da tecnologia. Cinco chips diferentes foram testados. E os valores da fonte de alimentação foram variadas em 1,62V, 1,80V e 1.98, então foram medidos os valores de saída pico a pico e largura de pulso para cada chip. O consumo de energia medido foi de 244 uW, e a amplitude do pulso de saída 115,2 mV pico a pico e largura de pulso de 407,8 ps com um sinal de entrada senoidal de amplitude 806mVp à 100 MHz . O pulso gerado pelo gerador de pulso resultou em uma PSD (Power Spectral Density) com largura de banda de 0,6 GHz a 7,8 GHz, que é adequado para aplicações de UWB para detecção do câncer de mama. / As a result for detecting the numeric representation, the system could identify tumors from 5mm of extent with adequate localization, as well size determination. The primary goal of this work, therefore, is to bring out the project, manufacturing process and achieved results of tests regarding an integrated circuit for generating pulses which are shaped as the derivative of fifth order of the Gaussian pulse (UWMB transmitter) using the UWB 0.18 CMOS. The pulse generator circuit is composed by: circuit for generating square waves, delay generator, phase detector and output stage. The generator of square wave was implemented from one buffer of rf, with an inverter in the output and impedance matching. The delay generator was implemented from one cascade of inverters. The circuit for detecting the stages is assembled with n block dynamic, n-latch and static inverter for quickly generating pulses (high speed pulse generation). The dimensions of the transistors were defined in order to obtain the adequate characteristics of one Gaussian pulse of 5th order, considering the required specification of the Detection System for Cancer of Breast. It was implemented using the full Custom layout, taking into account the minimum dimensions for such technology. Five different chips were tested. The values of the source energy varied among 1,62V, 1,80V and 1,98V, being later measured the output values, peak to peak, as well the pulse width for each chip. The measured energy consumption was 244 uW, the amplitude of the output pulse was 115.2 mV peak to peak, and the pulse width was 407,8ps with sinusoidal input signal of 806mVp amplitude at 100MHz. As a result, it was obtained a PSD (Power Spectral Density) with band width of 0,6GHz to 7,8GHz from the pulse generator, which is quite adequate for UWB applications for detecting the breast cancer.

La réduction des dimensions des dispositifs et les limites atteintes par la lithographie pour les nœuds technologiques sub-20nm requièrent l’introduction d’un « double patterning » pour définir les contacts. Le masque final est défini par l’intersection d’un masque dur en TiN et d’un masque organique (OPL) et est utilisé pour transférer les motifs des contacts par gravure plasma dans une couche de diélectriques (SiO2/Si3N4). Par rapport aux nœuds technologiques précédents, cette architecture entraine de nouvelles problématiques dues à l’intégration du double patterning et du masque dur en TiN.Cette thèse porte sur la gravure des contacts définis par « double patterning » pour la technologie 14 nm FDSOI (Fully Depleted Silicon On Insulator) à STMicroelectronics. Plus particulièrement, l’objectif principal de ce travail de thèse a été d’évaluer l’effet des masques d’OPL et de TiN sur la gravure des contacts en termes de contrôle dimensionnel (CD) et de profil de gravure. Dans cet objectif, nous avons comparé deux procédés de gravure de l’OPL à base de N2/H2 ou de COS/O2 et leur impact sur le transfert des contacts. Un autre objectif de ce travail de thèse a été consacré à la compréhension et à la limitation du phénomène de croissance de résidus métalliques après le procédé de gravure des contacts. Ceci est obtenu notamment à travers le développement de traitements plasma post gravure. Pour déterminer les mécanismes d’interactions entre les plasmas du procédé de gravure des contacts et les matériaux des masques, des analyses de la surface des matériaux exposés aux plasmas ont été réalisées par des techniques telles que l’XPS et l’EDX et des analyses de la phase gazeuses du plasma ont été réalisées par spectroscopie d’émission optique (Optical Emission Spectroscopy – OES). Nous avons montré que les profiles des contacts étaient influencés par le procédé de l’étape d’ouverture de l’OPL et particulièrement à travers l’interaction des plasmas et du masque dur en TiN. Cette interaction peut conduire à une modification de la forme du masque dur en TiN et au redépôt de composés métalliques peu volatils sur la plaque et sur les parois du réacteur au cours du procédé de gravure. Ceci peut conduire à une déformation des profils et à un quasi-arrêt de la gravure pendant la gravure des matériaux diélectriques. Par ailleurs, nous avons montré que l’efficacité des traitements à base de méthane pour ralentir ou éviter la croissance de résidus à la surface du TiN après la gravure des diélectriques peut être améliorée par un contrôle de l’état des parois de la chambre au cours du traitement, en effectuant un nettoyage de la chambre en oxygène avant l’application du traitement. / Due to the reduction of the transistor dimensions and the limitations of the lithography to define small contact patterns for the sub-20nm technological nodes, the introduction of double patterning strategies is required for contact patterning. In such architectures, the final mask is defined by the combination of a TiN hard mask and an organic (OPL) mask, which defines the contact patterns that will be transferred into the underlying dielectric layers (SiO2/Si3N4). This leads to new challenges for contacts definition, especially because of the integration of double patterning strategies and TiN hard masks which were not present for previous technologies.This study addresses the contact etching process using a double patterning strategy for the 14 nm Fully Depleted Silicon on Insulator (FDSOI) technology. More particularly, the main goal of this work was to evaluate the impact of both TiN and OPL masks on the contact patterning process in terms of dimensions and profiles control. For this, we have compared two different OPL etch processes (N2/H2 and COS/O2) and their impact in the contact pattern transfer in the dielectric layers. In addition, this work was also dedicated to the understanding and limitation of metallic residues growth occurring after the contact etch process. This is carried out especially through the development of post etch plasma treatments.We performed XPS and EDX analyses to determine the mechanisms involved in the interactions between plasma processing steps and the masking materials (TiN, OPL). The plasma gas phase was also analyzed by Optical Emission Spectroscopy (OES).We show that the contact etch profile is influenced by the OPL etching process due to the interactions between the plasma and the TiN hard mask. These interactions may lead to a modification of the hard mask profile and are at the origin of the metallic contamination observed over the patterned wafer or the reactor walls. Due to this contamination, the contact profiles are deformed and the dielectric etch process may be stopped. Finally, we have shown that the state-of-art CH4-based post-etch-treatments introduced to limit the residues growth after dielectric patterning with a TiN mask can be improved by adding an oxygen-based reactor cleaning process before the post-treatment process.