The large unlicensed 3 GHz overlapping bandwidth that is available worldwide at 60 GHz has resulted in renewed interest in 60 GHz technology. This frequency band has made it attractive for short-range gigabit wireless communication. The power amplifier (PA) directly influences the performance and quality of this entire communication chain, as it is one of the final subsystems in the transmitter. Spectral efficient modulation schemes used at 60 GHz pose challenging requirements for the linearity of the PA. To improve the linearity, several external linearisation techniques currently exist, such as feedback, feedforward, envelope elimination and restoration, linear amplification with non-linear components and predistortion. This thesis is aimed at investigating and characterising the distortion components found in PAs at mm-wave frequencies and evaluating whether an adaptive predistortion (APD) linearisation technique is suitable to reduce these distortion components. After a thorough literature study and mathematical analysis, it was found that the third-order intermodulation distortion (IMD3) components were the most severe distortion components. Predistortion was identified as the most effective linearisation technique in terms of minimising these IMD3 components and was therefore proposed in this research. It does not introduce additional complexity and can easily be integrated with the PA. Furthermore, the approach is stable and has lower power consumption when compared to the aforementioned linearisation techniques. The proposed predistortion technique was developed compositely through this research by making it a function of the PA’s output power that was measured using a power detector. A comparator was used with the detected output power and the reference voltages to control the dynamic bias circuit of the variable gain amplifier. This provided control and flexibility on when to apply the predistortion to the PA and therefore allowing the linearity of the PA to be optimised. Three-stage non-linear and linear PAs were also designed at 60 GHz and implemented to compare the performance of the APD technique and form part of the hypothesis verification process. The 130 nm silicon-germanium (SiGe) bipolar and complementary metal oxide semiconductor (BiCMOS) technology from IBM was used for the simulation of the entire APD and PA design and for the fabrication of the prototype integrated circuits (ICs). This technology has the advantage of integrating the high performance, low power intensive SiGe heterojunction bipolar transistors (HBTs) with the CMOS technology. The SiGe HBTs have a high cut-off frequency ( > 200 GHz), which is ideal for mm-wave PA applications and the CMOS components were integrated in the control logic of the digital circuitry. The simulations and IC layout were accomplished with Cadence Virtuoso. The implemented IC occupies an area of 1.8 mm by 2.0 mm. The non-linear PA achieves a of 11.97 dBm and an of -10 dBm. With the APD technique applied, the linearity of the PA is significantly improved with an of -6 dBm and an optimum IMD3 reduction of 10 dB. Based on the findings and results of the applied APD technique, APD reduced intermodulation distortion (especially the IMD3) and is thus suitable to improve the linearity of PAs at mm-wave frequencies. To the knowledge of this author, no APD technique has been applied for PAs at 60 GHz, therefore the contribution of this research will assist future PA designers to characterise and optimise the reduction of the IMD3 components. This will result in improved linear output power from the PA and the use of complex modulation schemes at 60 GHz. ## Die groot ongelisensieerde oorvleuelde bandwydte van 3 GHz wat wêreldwyd by 60 GHz beskikbaar is, het hernude belangstelling in 60 GHz-tegnologie tot gevolg gehad. Hierdie frekwensieband het dit aantreklik gemaak vir kortafstand-gigabis draadlose kommunikasie. Aangesien die drywingsversterker een van die finale subsisteme in die seintoestel is, het dit ’n direkte invloed op die werkverrigting en kwaliteit van die hele kommunikasieketting. Spektraaldoeltreffende modulasieskemas wat by 60 GHz gebruik word, stel uitdagende vereistes vir die lineariteit van die drywingsversterker. Om die lineariteit te verbeter, is daar tans verskeie eksterne linearisasietegnieke beskikbaar, soos terugvoer, vooruitvoer, omhullende eliminasie en -restorasie, lineêre versterking met nie-lineêre komponente en predistorsie. Hierdie tesis het ten doel om die distorsiekomponente wat by millimetergolffrekwensies in drywingsversterkers gevind word, te ondersoek en te karakteriseer en om te bepaal of ’n aanpassende predistorsielinearisasietegniek geskik is om hierdie distorsiekomponente te verminder. Na ’n deeglike literatuurstudie en wiskundige analise is gevind dat die derde-orde-intermodulasiedistorsiekomponente (IMD3) die ergste distorsiekomponente was. Predistorsie is geïdentifiseer as die mees effektiewe linearisasietegniek om hierdie IMD3-komponente te minimeer en die gebruik daarvan is gevolglik in hierdie navorsing voorgestel. Dit bring nie addisionele kompleksiteit mee nie en kan maklik met die drywingsversterker geïntegreer word. Daarbenewens is die benadering stabiel, met laer kragverbruik in vergelyking met die linearisasietegnieke wat voorheen genoem is. Die voorgestelde predistorsietegniek is in hierdie navorsing ontwikkel deur dit ’n funksie van die drywingsversterker se uitsetkrag te maak, wat gemeet is deur ’n kragdetektor te gebruik. ’n Vergelyker is saam met die gemete uitsetkrag en die verwysingspannings gebruik om die dinamiese voorspanningsbaan van die veranderlike winsversterker te beheer. Dit het toegelaat vir beheer en buigsaamheid in die aanwending van die predistorsie op die drywingsversterker en gevolglik vir die optimering van die lineêriteit van die drywingsversterker. Driefase- nie-lineêre en lineêre drywingsversterkers is ook by 60 GHz ontwerp en geïmplementeer om die werkverrigting van die aanpassende predistorsietegniek te vergelyk en dit vorm deel van die verifikasieproses van die hipotese. Die 130 nm-silikon-germanium (SiGe) bipolêre en metaaloksiedhalfgeleier- (BiCMOS) tegnologie van IBM is gebruik vir die simulasie van die hele aanpassende predistorsietegniek- en drywingsversterkerontwerp en vir die vervaardiging van die prototipe- geïntegreerde stroombane. Hierdie tegnologie het die voordeel dat dit die hoë werkverrigting en lae krag-intensiewe SiGe-heterovoegvlak-bipolêre transistors (HBTs) met die CMOS-tegnologie integreer. Die SiGe-HBTs het ’n hoë afsnyfrekwensie ( > 200 GHz), wat ideaal is vir mm-golfdrywingsversterkeraanwendings en die CMOS-komponente is in die beheer-logika van die digitale stroombaan geïntegreer. Die geïntegreerde stroombaan beslaan ’n area van 1.8 mm by 2.0 mm. Die nie-lineêre drywingsversterker behaal ’n van 11.97 dBm en ’n van -10 dBm. As die APD-tegniek toegepas word, word die lineariteit van die drywingsversterker beduidend verbeter tot ’n van -6 dBm en ’n optimum-IMD3-vermindering van 10 dB. Volgens die bevindings en resultate van die APD-tegniek wat toegepas is, verminder APD intermodulasiedistorsie (veral die IMD3) en is gevolglik geskik om die lineariteit van drywingsversterkers by mm-golffrekwensies te verbeter. Na die wete van hierdie skrywer is daar nie voorheen enige APD tegniek toegepas vir drywingsversterkers by 60 GHz nie, gevolglik sal die bydrae van hierdie navorsing toekomstige drywingsversterkerontwerpers help om die vermindering van die IMD3-komponente te karakteriseer en optimeer. Dit sal verbeterde lineêre uitsetkrag van die drywingsversterker tot gevolg hê, asook meer komplekse modulasieskemas by 60 GHz toelaat. / Thesis (PhD)--University of Pretoria, 2014. / lk2014 / Electrical, Electronic and Computer Engineering / PhD / unrestricted

The large unlicensed 3 GHz overlapping bandwidth that is available worldwide at 60 GHz has resulted in renewed interest in 60 GHz technology. This frequency band has made it attractive for short-range gigabit wireless communication. The power amplifier (PA) directly influences the performance and quality of this entire communication chain, as it is one of the final subsystems in the transmitter. Spectral efficient modulation schemes used at 60 GHz pose challenging requirements for the linearity of the PA. To improve the linearity, several external linearisation techniques currently exist, such as feedback, feedforward, envelope elimination and restoration, linear amplification with non-linear components and predistortion. This thesis is aimed at investigating and characterising the distortion components found in PAs at mm-wave frequencies and evaluating whether an adaptive predistortion (APD) linearisation technique is suitable to reduce these distortion components. After a thorough literature study and mathematical analysis, it was found that the third-order intermodulation distortion (IMD3) components were the most severe distortion components. Predistortion was identified as the most effective linearisation technique in terms of minimising these IMD3 components and was therefore proposed in this research. It does not introduce additional complexity and can easily be integrated with the PA. Furthermore, the approach is stable and has lower power consumption when compared to the aforementioned linearisation techniques. The proposed predistortion technique was developed compositely through this research by making it a function of the PA’s output power that was measured using a power detector. A comparator was used with the detected output power and the reference voltages to control the dynamic bias circuit of the variable gain amplifier. This provided control and flexibility on when to apply the predistortion to the PA and therefore allowing the linearity of the PA to be optimised. Three-stage non-linear and linear PAs were also designed at 60 GHz and implemented to compare the performance of the APD technique and form part of the hypothesis verification process. The 130 nm silicon-germanium (SiGe) bipolar and complementary metal oxide semiconductor (BiCMOS) technology from IBM was used for the simulation of the entire APD and PA design and for the fabrication of the prototype integrated circuits (ICs). This technology has the advantage of integrating the high performance, low power intensive SiGe heterojunction bipolar transistors (HBTs) with the CMOS technology. The SiGe HBTs have a high cut-off frequency (fT > 200 GHz), which is ideal for mm-wave PA applications and the CMOS components were integrated in the control logic of the digital circuitry. The simulations and IC layout were accomplished with Cadence Virtuoso. The implemented IC occupies an area of 1.8 mm by 2.0 mm. The non-linear PA achieves a Psat of 11.97 dBm and an IP1dB of -10 dBm. With the APD technique applied, the linearity of the PA is significantly improved with an IP1dB of -6 dBm and an optimum IMD3 reduction of 10 dB. Based on the findings and results of the applied APD technique, APD reduced intermodulation distortion (especially the IMD3) and is thus suitable to improve the linearity of PAs at mm-wave frequencies. To the knowledge of this author, no APD technique has been applied for PAs at 60 GHz, therefore the contribution of this research will assist future PA designers to characterise and optimise the reduction of the IMD3 components. This will result in improved linear output power from the PA and the use of complex modulation schemes at 60 GHz. / Thesis (PhD)--University of Pretoria, 2014. / Electrical, Electronic and Computer Engineering / PhD

On-chip impedance tuning is used to overcome IC perturbations caused by packaging stress. Tuning is more important for matching networks of radio frequency (RF) systems. Possible package resonance and fabrication process variations may cause instability, which is a major problem in RF systems. Thus, precautions need to be taken in order to maintain the overall stability of components and the final system itself. Electrically erasable programmable read-only memory switches (EEPROMs) occupy less die area compared to e-fuses and microelectromechanical system (MEMS) switches, thus EEPROMs are proposed to be used as tuning switches in millimetre-wave (mm-wave) applications. It is anticipated that EEPROM switches will also enable multi-time programming because of the smaller area and the fact that more switches can be used for fine-tuning. The problem addressed in this research is how suitable EEPROMs are for switching applications in the mm-wave region. The main focus of this dissertation is to characterise the suitability of EEPROM switches qualitatively for tuning with systems operating in the mm-wave spectrum. 130 nm SiGe BiCMOS IBM 8HP process technology was used for simulation and the fabricated prototypes. The Dickson charge pump (CP), two voltage doubler CPs and four floating gate (FG) devices were investigated. Literature and theoretical verification was done using computer aided design (CAD) Cadence software through circuit analysis and the layouts were also designed for integrated circuit (IC) prototype fabrication. The qualitative evaluation of the hypothesis was based on investigating reliability issues, switching characteristics, CP output drive capability and mm-wave characterisation. The maximum measured drain current for FGs was 1.4 mA, 2.7 mA and 3 mA for devices 2, 3 and 4, respectively. The ratio between ON state switching current (after tunnelling) and OFF state switching current (after injection) was 1.5, 1.35 and 6 for devices 2, 3 and 4, respectively. The ratios correlated with the expected results in terms of FG transistor area: a high area results in a higher ratio. Despite the correlation, devices 2 and 3 may be unsuitable because the ratio is less than 2: a smaller ratio between the ON and OFF states could also result in higher losses. The Dickson CP achieved an output voltage of 2.96 V from an input of 1.2 V compared to 3.08 V as computed from the theoretical analysis and 4.5 V from the simulation results. The prototypes of the voltage doubler CP did not perform as expected: a maximum of 1 V was achieved compared to 4.1 – 5 V as in the simulation results. The suitability of FG devices for switching applications depends on the ratio of the ON and OFF states (associated to insertion and isolation losses): the larger the FG transistor area, the higher the ratio. The reliability issues are dominated by the oxide thickness of the transistor, which contributes to charge leakages and charge trapping: smaller transistor length causes more uncertainties. Charge trapping in the oxide increases the probability of leakages and substrate conduction, thus introduces more losses. Based on the findings of this research work, the FG devices promise to be suitable for mm-wave switching applications and there is a need for further research investigation to characterise the devices in the mm-wave region fully. AFRIKAANS : Impedansie-instelling op skyf word gebruik om steurings in geïntegreerde stroombane wat deur verpakkingstres veroorsaak word, te oorkom. Instelling is meer belangrik om netwerke van radiofrekwensiesisteme te paar. Moontlike verpakkingresonansie en variasies in die vervaardigingsproses kan onstabiliteit veroorsaak, wat ‟n groot probleem is in radiofrekwensiesisteme. Voorsorg moet dus getref word om die oorhoofse stabiliteit van komponente en die finale sisteem self te handhaaf. Elektries uitveebare programmeerbare slegs-lees-geheueskakelaars (EEPROMs) neem minder matrysarea op as e-sekerings en die sekerings van mikro-elektromeganiese sisteme en word dus voorgestel vir gebruik as instellingskakelaars in millimetergolfaanwendings. Daar word verwag dat EEPROM-skakelaars ook multi-tydprogrammering sal moontlik maak as gevolg van die kleiner area en die feit dat meer skakelaars gebruik kan word vir fyn instellings. Die probleem wat in hierdie navorsing aandag geniet, is die geskiktheid van EEPROMS vir skakelaanwendings in die millimetergolfstreek. The hooffokus van die verhandeling is om die geskiktheid van EEPROM-skakelaars kwalitatief te karakteriseer vir instelling met sisteme wat in die millimetergolfspektrum funksioneer. Department of Electrical, Electronic and Computer Engineering v University of Pretoria 130 nm SiGe BiCMOS IBM 8HP-prosestegnologie is gebruik vir simulasie en die vervaardigde prototipes. Die Dickson-laaipomp is gebruik vir simulasie en die vervaardigde prototipes. Die Dickson-laaipomp, twee spanningverdubbelinglaaipompe en vier swewendehektoestelle is ondersoek. Literatuur- en teoretiese verifikasie is gedoen met behulp van rekenaarondersteunde-ontwerp (CAD) Cadence-sagteware deur stroombaananalise en die uitleg is ook ontwerp vir die vervaardiging van geïntegreerdestroombaanprototipes. Die kwalitatiewe evaluasie van die hipotese is gebaseer op die ondersoek van betroubaarheidkwessies, skakelingeienskappe, laaipompuitsetdryfvermoë en millimetergolfkarakterisering. Die maksimum gemete dreineerstroom vir swewende hekke was 1.4 mA, 2.7 mA en 3 mA vir onderskeidelik toestelle 2, 3 en 4. Die verhouding tussen die AAN-toestand van die skakelstroom (na tonnelling) en die AF-toestand van die skakelstroom (na inspuiting) was 1.5, 1.35 en 6 vir toestelle 2, 3 en 4, onderskeidelik. Die verhoudings het ooreengestem met die verwagte resultate rakende die swewendehek-transistorareas: ‟n groot area het ‟n hoër verhouding tot gevolg. Nieteenstaande die ooreenstemming, mag toestelle 2 en 3 moontlik nie geskik wees nie, omdat die verhouding kleiner as 2 is: ‟n kleiner verhouding tussen die AAN- en AF-toestande mag ook hoër verliese tot gevolg hê. Die Dickson-laaipomp het ‟n uitsetspanning van 2.96 V vanaf ‟n inset van 1.2 V vergeleke met 3.08 V soos bereken volgens die teoretiese analise en 4.5 V volgens die simulasieresultate. Die prototipes van die spanningverdubbelinglaaipomp het nie gefunksioneer soos verwag is nie: ‟n maksimum van 1 V is bereik vergeleke met 4.1 – 5 V soos in die simulasieresultate. Die geskiktheid van swewendehektoestelle vir skakelingtoepassings hang af van die verhouding van die AAN- en AF-toestande (wat met invoer-en isolasieverlies geassosieer word): hoe groter die swewendehektransistorarea, hoe hoër die verhouding. Die betroubaarheidkwessies word oorheers deur die oksieddikte van die transistor, wat bydra tot ladinglekkasies en ladingvasvangs: korter transistorlengte veroorsaak meer onsekerheid. Ladingvasvangs in die oksied verhoog die moontlikheid van lekkasies en substraatgeleiding en veroorsaak dus groter verlies. Die bevindings van hierdie navorsing toon dat swewendehektoestelle waarskynlik geskik is vir millimetergolfaanwendings en verdere navorsing is nodig om die toestelle volledig in die millimetergolfstreek te karakteriseer. Copyright / Dissertation (MEng)--University of Pretoria, 2013. / Electrical, Electronic and Computer Engineering / unrestricted