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With the evolution of technologies, mixed-signal system integration is becoming necessary for combining heterogeneous functions such as high-speed processors, radio frequency (RF) circuits, memory, microelectromechanical systems (MEMS), sensors, and optoelectronic devices. This kind of integration is required for convergent microsystems that support communication and computing capabilities in a tightly integrated module. A major bottleneck with such heterogeneous integration is the noise coupling between the dissimilar blocks constituting the system. The noise generated by the high-speed digital circuits can couple through the power distribution network (PDN) and this noise can transfer to sensitive RF circuits, completely destroying the functionality of noise-sensitive RF circuits. One common method used for mixed-signal integration in the package is splitting the power and/or ground planes. The gap in the power and ground planes can partially block the propagation of electromagnetic waves. However, electromagnetic energy can still couple through the split, especially at frequencies greater than 1 GHz. The AI-EBG structure in this dissertation has been developed to suppress unwanted noise coupling in mixed-signal systems and this AI- EBG structure shows excellent isolation (-80 dB ~ -140 dB), which results in a noise coupling-free environment in mixed-signal systems. The AI-EBG structure would be part of the power distribution network (PDN) in systems and is expected to have a significant impact on noise suppression and isolation in mixed-signal systems in future.

This thesis describes the architecture, verification, qualification, and packaging of a 16-channel silicon-germanium (SiGe) Remote Electronics Unit (REU) designed for use in extreme environment applications encountered on NASA's exploration roadmap. The SiGe REU was targeted for operation outside the protective electronic "vaults" in a lunar environment that exhibits cyclic temperature swings from -180ºC to 120ºC, a total ionizing dose (TID) radiation level of 100 krad, and heavy ion exposure (single event effects) over the mission lifetime. The REU leverages SiGe BiCMOS technological advantages and design methodologies, enabling exceptional extreme environment robustness. It utilizes a mixed-signal Remote Sensor Interface (RSI) ASIC and an HDL-based Remote Digital Control (RDC) architecture to read data from up to 16 sensors using three different analog channel types with customizable gain, current stimulus, calibration, and sample rate with 12-bit analog-to-digital conversion. The SiGe REU exhibits excellent channel sensitivity throughout the temperature range, hardness to at least 100 krad TID exposure, and single event latchup immunity, representing the cutting edge in cold-capable electronic systems. The SiGe REU is the first example within a potential paradigm shift in space-based electronics.