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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
31

Low Noise And Low Repetition Rate Semiconductor-based Mode-locked Lasers

Mandridis, Dimitrios 01 January 2011 (has links)
The topic of this dissertation is the development of low repetition rate and low noise semiconductor-based laser sources with a focus on linearly chirped pulse laser sources. In the past decade chirped optical pulses have found a plethora of applications such as photonic analogto-digital conversion, optical coherence tomography, laser ranging, etc. This dissertation analyzes the aforementioned applications of linearly chirped pulses and their technical requirements, as well as the performance of previously demonstrated chirped pulse laser sources. Moreover, the focus is shifted to a specific application of the linearly chirped pulses, timestretched photonic analog-to-digital conversion (TS ADC). The challenges of surpassing the speeds of current electronic converters are discussed, while the need for low noise linearly chirped pulse lasers becomes apparent for the realization of TS ADC. The experimental research addresses the topic of low noise chirped pulse generation in three distinct ways. First, a chirped pulse (Theta) laser with an intra-cavity Fabry-Pérot etalon and a long-term referencing mechanism is developed that results in the reduction of the pulse-topulse energy noise. Noise suppression of > 15 times is demonstrated. Moreover, an optical frequency comb with spacing equal to the repetition rate (≈100 MHz) is generated using the etalon, resulting in the first reported demonstration of a system operating in the sub-GHz regime based on semiconductor gain. The path for the development of the Theta laser was laid by the precise characterization of the etalon used in this laser cavity design. A narrow linewidth laser is used in conjunction with an acousto-optic modulator externally swept for measuring the etalon's iv free spectral range with a sub-Hz precision, or 10 parts per billion. Furthermore, the measurement of the etalon long-term drift and birefringence lead to the development of a modified intra-cavity Hänsch-Couillaud locking mechanism for the Theta laser. Moreover, an external feed-forward system was demonstrated that aimed at increasing the temporal/spectral uniformity of the optical pulses. A complete characterization of the system is demonstrated. On a different series of experiments, the pulses emitted by an ultra-low noise but high repetition rate mode-locked laser were demultiplexed resulting in a low repetition rate pulse train. Experimental investigation of the noise properties of the laser proved that they are preserved during the demultiplexing process. The noise of the electrical gate used in this experiment is also investigated which led into the development of a more profound understanding of the electrical noise of periodical pulses and a mechanism of measuring their noise. The appendices in this dissertation provide additional material used for the realization of the main research focus of the dissertation. Measurements of the group delay of the etalon used in the Theta laser are presented in order to demonstrate the limiting factors for the development of this cavity design. The description of a balancing routine is presented, that was used for expanding the dynamic range of intra-cavity active variable delay. At last, the appendix presents the calculations regarding the contribution of various parameters in the limitations of analog-todigital conversion.
32

Low Noise, Narrow Optical Linewidth Semiconductor-based Optical Comb Source And Low Noise Rf Signal Generation

Ozdur, Ibrahim Tuna 01 January 2011 (has links)
Recently optical frequency combs and low noise RF tones are drawing increased attention due to applications in spectroscopy, metrology, arbitrary waveform generation, optical signal processing etc. This thesis focuses on the generation of low noise RF tones and stabilized optical frequency combs. The optical frequency combs are generated by a semiconductor based external cavity mode-locked laser with a high finesse intracavity etalon. In order to get the lowest noise and broadest bandwidth from the mode-locked laser, it is critical to know the free spectral range (FSR) of the etalon precisely. First the etalon FSR is measured by using the modified Pound-Drever-Hall (PDH) based method and obtained a resolution of 1 part in 106 , which is 2 order of magnitude better than the standard PDH based method. After optimizing the cavity length, RF driving frequency and PDH cavity locking point, the mode-locked laser had an integrated timing jitter of 3 fs (1 Hz- 100 MHz) which is, to the best of our knowledge, the lowest jitter ever reported from a semiconductor based multigigahertz comb source. The modelocked laser produces ~ 100 comb lines with 10 GHz spacing, a linewidth of ~500 Hz and 75 dB optical signal-to-noise ratio. The same system can also be driven as a regeneratively modelocked laser with greatly improved noise performance. Another way of generating a low noise RF tone is using an opto-electronic oscillator which uses an optical cavity as a high Q element. Due to the harmonic nature of OEOs, a mode selection element is necessary. Standard OEOs use an RF filter having drawbacks such as broad pass band, high loss, and high thermal noise. In our work, a novel optoelectronic scheme which uses an optical filter (Fabry-Perot etalon) as the mode filter instead of an RF filter is demonstrated. This method has the advantage of having ultra-narrow filtering bandwidths ( ~ 10 iv kHz for a 10 GHz FSR and 106 finesse) and an extremely low noise RF signal. Experimental demonstration of the proposed method resulted in a 5-10 dB decrease of the OEO noise compared to the conventional OEO setup. Also, by modifying the etalon-based OEO, and using single side band modulation, an optically tunable optoelectronic oscillator is achieved with 10-20 dB lower noise than dual side band modulation. Noise properties of the OEO as a function of optical frequency detuning is also analyzed theoretically and the results are in agreement with experimental results. The thesis concludes with comments on future work and directions.
33

Investigation of the Feasibility of Mode-Locked Semiconductor Devices as Excitation Sources for Two-Photon Fluorescence

Logan, Andrew 12 1900 (has links)
<p> The potential of a mode-locked semiconductor laser oscillator as a short pulse source for two-photon fluorescence microscopy is explored. Amplification of the 1075 nrn laser is performed with a single pass semiconductor optical amplifier or a ytterbium-doped fibre amplifier. The mode-locked diode oscillator amplified by the Yb-doped fibre amplifier has been shown to produce uncompressed pulses of 4-10 ps with an average power of up to ~0.8 W. Compression with a single pass modified grating pair compressor reduces the pulse duration to as short as 860 fs. The output power level can be easily scaled to higher values. </p> <p> The ability to tightly focus the Yb-doped fibre amplifier beam and semiconductor optical amplifier beam for the purpose of microscopy is studied. Results indicate that the fibre performs close to an ideal Gaussian laser beam source. The semiconductor optical amplifier beam does not focus as well. Measurements suggest that regions of the beam, when focused, do not significantly contribute to the generation of two-photon fluorescence. </p> <p> The efficiency of two-photon fluorescence generation of the two amplifiers is compared to that of the conventional two-photon excitation source: the mode-locked titanium sapphire laser. Results illustrate the need to improve certain operating parameters of the laser oscillator and two amplifiers to be considered practical for two-photon fluorescence microscopy. The mode-locked semiconductor laser oscillator amplified by the Yb-doped fibre amplifier is deemed to be close to being ready for two-photon imaging applications. </p> / Thesis / Master of Applied Science (MASc)
34

Multiwavelength modelocked semiconductor lasers for photonic access network applications

Mielke, Michael M. 01 October 2003 (has links)
No description available.
35

Extended cavity Kerr lens modelocked Ti:Sapphire laser cavity dumped with an acousto-optic Bragg cell

Albert, Felicie 01 January 2004 (has links)
No description available.
36

[en] GENERATION OF OPTICAL SHORT PULSES AND TIME DOMAIN MULTIPLEXING / [pt] GERAÇÃO DE PULSOS ÓPTICOS CURTOS E MULTIPLEXAÇÃO NO DOMÍNIO DO TEMPO

12 March 2007 (has links)
[pt] Esta dissertação de mestrado demonstra o princípio do funcionamento de um sistema gerador e multiplexador óptico utilizando pulsos curtos. Através do efeito de mode locked fiber ring laser pulsos curtos ópticos são gerados para taxa de repetição de 2.48 GHz ao passo que o escalonamento é atribuído ao uso de dispositivos passivos ópticos os quais compõem o conjunto experimental permitindo que a freqüência de 9.95 GHz seja atingida mediante a combinação exata das técnicas utilizadas. O coração de sistema está contido na geração e controle dos pulsos os quais determinarão a taxa de repetição em baixa freqüência e posteriormente a multiplexação através de linhas de atraso devidamente combinadas fornecerão o valor escalonado de operação de frequência. / [en] This master thesis demonstrates the principle of the functioning of an optical time domain multiplex system using short pulses. Through the effect of mode locked to fiber ring laser, optical short pulses are generated at repetition of 2.48 GHz to the step that the scheduling is attributed to the use of optic passive devices which compose the experimental setup allowing that the frequency of 9.95 GHz is reached by means of the accurate combination of the used techniques. The system heart is contained in the generation and control of the pulses which will later determine the rate of repetition in low frequency and multiplexing through lines of delay duly combined.
37

2 μm Pulsed Fiber Laser Sources and Their Application in Terahertz Generation

Fang, Qiang January 2012 (has links)
In this dissertation, an all-fiber-based single frequency nanosecond pulsed laser system at ~ 1918.4 nm in master-oscillator-power-amplifier (MOPA) configuration is present. The nanosecond pulse seed is achieved by directly modulating a continuous wave (CW) single frequency fiber laser using a fast electro-optical modulator (EOM) driven by an arbitrary waveform generator (AWG). One piece of single mode, large core, polarization-maintaining (PM) highly thulium-doped (Tm-doped) germanate glass fiber (LC-TGF) is used to boost the pulse power and pulse energy of these modulated pulses in the final power amplifier. This laser system can work in both high power and high energy regime: in high power regime, to the best of our knowledge, the highest average power 16 W and peak power 78.1 kW are achieved for single frequency transform-limited ~2.0 ns pulses at 500 kHz and 100 kHz repetition rate, respectively: In high energy regime, nearly 1 mJ and half mJ pulse energy is obtained for ~15 ns pulses at 1 kHz repetition rate and 5 kHz repetition rate, respectively. Theoretical modeling of the large-core highly Tm-doped germanate glass double-cladding fiber amplifier (LC-TG-DC-FA) is also present for 2&mum nanosecond pulse amplification. A good agreement between the theoretical and experimental results is achieved. The model can simulate the evolution of pump power, signal energy, pulse shape and the amplified stimulated emission (ASE) in the amplifier. It can also be utilized to investigate the dependence of the stored energy in the LC-TGF on the pump power, seed energy and repetition rate, which can be used to design and optimize the LC-TG-DC-FA to achieve higher pulse energy and average power. Two channel of high energy nanosecond pulses (at 1918.4 nm and 1938 nm) are utilized to generate THz wave in a quasi-phase-matched (QPM) gallium arsenide (GaAs) based on difference frequency generation. THz wave with ~ 5.4μW average power and ~18 mW peak power has been achieved. Besides, one model is built to simulate a singly resonated THz parametric oscillator. The threshold, the dependence of output THz energy on pump energy has been investigated through this model. One pump enhanced THz parametric oscillator has been proposed. The enhancement factor of the nanosecond pulses in a bow-tie ring cavity has been calculated for different pulse duration, cavity length and the transmission of the coupler. And the laser resonances in the ring cavity have been observed by using a piezo to periodically adjust the cavity length. We also build an all-fiber thulium-doped wavelength tunable mode-locked laser operating near 2&mum. Reliable self-starting mode locking over a large tuning range (>50 nm) using fiber taper based carbon nanotube (FTCNT) saturable absorber (SA) is observed. Spectral tuning is achieved by stretching another fiber taper. To the best of our knowledge, this is the first demonstration of an all-fiber wavelength tunable mode-locked laser near 2&mum.
38

Ultrashort Pulse Production in Synchronously Pumped Mode-Locked Dye Laser Systems

MacFarlane, Duncan Leo 01 January 1989 (has links)
The concern of this dissertation is the understanding and improvement of a class of lasers that is responsible for some of the shortest optical pulses available today. In particular, we seek ways to produce from synchronously pumped mode-locked dye laser systems, shorter pulses of higher intensity with improved pulse-to-pulse consistency. Specific topics.that are discussed herein include the study of the role of the pump pulse in synchronously pumped mode-locked lasers, the study of the pulse shaping and shortening due to an intracavity saturable absorber, and the study of a fundamental pulse train instability associated with these lasers.
39

Dual-Wavelength Passively Mode-Locked Semiconductor Disk Laser

Scheller, Maik, Baker, Caleb W., Koch, Stephan W., Moloney, Jerome V. 15 June 2016 (has links)
A dual-wavelength mode-locked semiconductor vertical-external-cavity-surface-emitting laser is demonstrated. A semiconductor saturable absorber mirror allows for simultaneous mode locking of pulses centered at two center wavelengths with variable frequency spacing. The difference-frequency control is achieved with an intracavity etalon. Changing the finesse of the etalon enables the adjustment of the pulse duration between 6 and 35 ps. The emitted two-color pulses are modulated by a beat frequency in the terahertz range. Self-starting mode-locking with 0.8-W average output power is demonstrated.
40

The Study of Concentration Effect of Carbon Nanotube Based Saturable Absorber on Mode-Locked Pulse

Chen, Xi-zong 20 July 2010 (has links)
We comprehensively investigated the concentration effect of dispersed single-walled carbon nanotubes (SWCNTs) in polymer films for being a saturable absorber (SA) to stabilize the mode locking performance of the Erbium-doped fiber laser (EDFL) pulse through the diagnosis of its nonlinear properties of SA. The measured modulation depth was 1 to 4.5% as the thickness increased from 18 to 265 £gm. We obtained the stable pulse of the mode-locked EDFL (MLEDFL) when the full-width half-maximum (FWHM) decreased from 3.43 to 2.02 ps as the concentrations of SWCNTs SA increased from 0.125 to 0.5 wt%. At constant concentration of 0.125 wt%, the similar pulse shortening effect of the MLEDFL was also observed when the FWHM decreased from 3.43 to 1.85 ps was the thickness of SWCNTs SA increased from 8 to 100 £gm. In EDFL system, we vary group-velocity dispersion (GVD) with different cavity length to achieve optical pulse compression. We got the shortest pulsewidth was 713 fs, and the time-bandwidth product (TBP) was 0.345. An in-depth study on the stable mode-locked pulse formation employing SWCNTs SA, it is possible to fabricate the SWCNT films for use in high performance MLEDFL and utilization of many other low-cost nanodevices.

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