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The Global ETD Search service is a free service for researchers
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Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 41 to 50 of 349 (0.087 seconds)Spelling suggestions: "subject:"amolecular bem epitaxial"" "subject:"7molecular bem epitaxial""
| 41 |
Growing of GaN on vicinal SiC surface by molecular beam epitaxy /Cheung, Sau-ha. January 2002 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2002. / Includes bibliographical references (leaves 68-71).
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| 42 |
Molecular beam epitaxial growth of GaN on Si(111) substrateXu, Zhongjie, 徐忠杰 January 2010 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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| 43 |
Growth of Bi2Se3 on Si substrate by molecular beam epitaxyKan, Xin., 阚欣. January 2011 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
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| 44 |
Molecular-beam epitaxial growth of low-dark-current avalanche photodiodesHurst, Jeffrey Byron, 1977- 29 August 2008 (has links)
The quaternary material system In[subscript x]Ga[subscript 1-x]As[subscript y]P[subscript 1-y] is an important material system for optoelectronic devices, specifically covering optimum fiber optic wavelengths. Among the limitations of using this material system concerning photodetector performance is generation of carriers due to material defects and impurities. This dissertation reports on the growth optimization of InGaAs using molecular-beam epitaxy for low-dark-current avalanche photodiodes through the study of the effects of the growth conditions on dark current. An optimum growth temperature of 545°C and arsenic beam equivalent pressure of 2x10⁻⁵ Torr was found for producing the lowest dark current density. Avalanche photodiodes were implemented with a dark current density 80 mA/cm² at 90% of the breakdown voltage.
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| 45 |
Characterization of as-grown and annealed narrow band gap nitrides grown by molecular beam epitaxyReifsnider, Jason Miles, 1967- 13 July 2011 (has links)
Not available / text
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| 46 |
Heteroepitaxial growth of InN on GaN by molecular beam epitaxy吳誼暉, Ng, Yee-fai. January 2002 (has links)
published_or_final_version / abstract / toc / Physics / Doctoral / Doctor of Philosophy
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| 47 |
Chemical beam epitaxial growth of ZnS : growth kinetics and novel electroluminescent struturesTong, Wusheng 05 1900 (has links)
No description available.
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| 48 |
Surface reaction kinetics of molecular beam epitaxial growth of CdTeBenson, J. David 12 1900 (has links)
No description available.
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| 49 |
Molecular beam epitaxial and chemical beam epitaxial growth and doping studies of (001) CdTeRajavel, Damodaran 08 1900 (has links)
No description available.
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| 50 |
Thermodynamics and surface kinetics of the growth and doping of HgCdTe heterostructures by metalorganic molecular beam epitaxyParikh, Ashesh 05 1900 (has links)
No description available.
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