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The interfacial reaction of Ni with Si, Si₀.₇₅Ge₀.₂₅, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, uniform film of NiGe was formed at 400°C for Ni reaction with Ge. Whereas using in situ annealing at 400°C, Ni₃Ge₂ and NiGe were observed. For the interfacial reaction of Ni with relaxed Si₀.₇₅Ge₀.₂₅ films rapid thermal annealed at 400°C, a mixed layer consisting of Ni₃(Si₁₋xGex)₂, Ni(Si₁₋yGey), and Si₁₋zGez (z>y>x) was formed; whereas only Ni₃(Si₁₋xGex)₂ and Ni(Si₁₋yGey>) were observed by in situ annealing. / Singapore-MIT Alliance (SMA)

In a conventional nonvolatile memory, charge is stored in a polysilicon floating gate (FG) surrounded by dielectrics. The scaling limitation stems from the requirement of very thin tunnel oxide layer. For FG, once the tunnel oxide develops a leaky path under repeated write/erase operation, all the stored charge will be lost.Therefore, the thickness of the tunnel oxide can not be scaled down to about 7 nm. To alleviate the scaling limitation of the conventional FG device while preserving the fundamental operating principle of the memory, we have studied the distributed charge storage approach such as the nanocrystal nonvolatile memory. Each nanodot will typically store only a handful of electrons; collectively the charges stored in these dots control the channel conductivity of the memory device. Nanocrystal charge storage offers several advantages, the main one being the potential to use thinner tunnel oxide without sacrificing non-volatility. This is a quite attractive proposition since reducing the tunnel oxide thickness is a key to lowering operating voltages and/or increasing operating speeds. The improved scalability results not only from the distributed nature of the charge storage, which makes the storage more robust and fault-tolerant, but also from the beneficial effects of Coulomb blockade. A local leaky path will not cause a fatal loss of information for the nanocrystal non-volatile memory device. Also, the nanocrystal memory device can maintain good retention characteristics and lower the power consumption. In recent years, nonvolatile memory with nanocrystals cell have widely applied to overcome the issue of operation and reliability for conventional floating gate memory. The excellent electrical characteristics of memory device need good endurance, long retention time and small operation voltage. Among numerous memory devices with nanocrystals, the memory device with metal nanocrystals was widely researched. It will be a new candidate for flash memory. The advantages of metal nanocrystals has have higher density of states around Fermi level, stronger coupling with conduction channel, wide range of available work functions and smaller energy perturbation due to carrier confinement. So metal nanocrystals can reduce operate voltage, and increase write/erase speed and endurance. Most important of all, we can control the sizes of nanocrystals dot and manufacture at low temperature¡CThis advantage can apply to thin film transistor liquid crystal display; it fabricates driving IC and logical IC on panel for diverseness and adds memory beside switch TFT as image storage to reduce power consumption for portability. In this thesis, we will discuss metal nanocrystals as memory storage medium. And we can use high temperature oxidation, low temperature annealing with oxygen to form nanocrystals. Most importantly, we analyze the effect of electron storage at metal nanocrystals by means of material and electrical analysis.

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Thesis (M.A.)--Zhong guo wen hua xue yuan. / Cover title. Reproduced from typescript. eContent provider-neutral record in process. Description based on print version record. Bibliography: p. 225-[228].

Thesis (M.A.)--Zhong guo wen hua xue yuan. / Cover title. Reproduced from typescript. Bibliography: p. 225-[228]. Also issued in print.

SOUSA, J.B. Estudo da influência dos parâmetros operacionais na eletrodeposição de camadas eletrocatalíticas de ligas de Ni-Fe. 2007. 67 f. Dissertação (Mestrado em Ciências Química Inorgânica) – Centro de Ciências, Universidade Federal do Ceará, Fortaleza, 2007. / Submitted by irlana araujo (irlanaaraujo@gmail.com) on 2011-12-29T12:48:00Z No. of bitstreams: 1 2007_dis_Jos_Sousa.pdf: 1996703 bytes, checksum: cd18632d3c46b27ffca6accdda448896 (MD5) / Approved for entry into archive by Aline Nascimento(vieiraaline@yahoo.com.br) on 2012-02-14T14:33:02Z (GMT) No. of bitstreams: 1 2007_dis_Jos_Sousa.pdf: 1996703 bytes, checksum: cd18632d3c46b27ffca6accdda448896 (MD5) / Made available in DSpace on 2012-02-14T14:33:02Z (GMT). No. of bitstreams: 1 2007_dis_Jos_Sousa.pdf: 1996703 bytes, checksum: cd18632d3c46b27ffca6accdda448896 (MD5) Previous issue date: 2007-07-13 / The present work shows the study of the ultrasound irradiation influence in the electrodeposition of Ni-Fe coatings. The electrocatalytic performance of these coatings for the hydrogen evolution reaction (her) in alkaline medium was also evaluated. The Ni-Fe coatings were obtained from plating solutions containing 0.06 mol.dm-3 Ni2SO4.6H2O, 0.48 mol.dm-3 Na3C3H5O7.2H2O, 0.71 mol.dm-3 Na2CO3 and 0.16 mol.dm-3 (bath 1) and 0.04 mol.dm-3 FeSO4.7H2O (bath 2). It was also added 8.4 mL L-1 H2SO4 to maintain the pH below 1. The electrodepositions were carried out under galvanostatic control in the range of 10 mA cm-2 to 50 mA cm-2, at room temperature (≈ 28ºC) and at 55ºC in the presence and in the absence of ultrasound irradiation. All coatings were deposited on disk mild steel substrate with an exposed geometric area of 0.7 cm2. The hydrogen evolution reaction was studied in 0.5 mol.dm-3 NaOH. In all electrochemical experiments Pt was the auxiliary electrode and Hg/HgO, OH- (0,5 mol.dm-3) was the reference one. The coatings ware characterized by scanning electron microscopy (SEM), cyclic voltammetry (CV) and the electrocatalytic properties of the Ni-Fe coating were evaluated by Tafel polarization and long-term performance tests. The results showed that the use of the ultrasound irradiation leads to an increase of the Fe content in the electrodeposits. Additionally, the coatings obtained in presence of ultrasound also present the best performance for her. / O presente trabalho mostra o estudo da influência da radiação de ultra-som sobre a eletrodeposição de ligas de Ni-Fe. Foram avaliados a estabilidade e o desempenho eletrocatalítico das ligas para a Reação de Desprendimento de Hidrogênio (RDH) em meio alcalino. As ligas eletrodepositadas de Ni-Fe foram obtidas em solução 0,06 mol.dm-3 de Ni2SO4.6H2O, 0,48 mol.dm-3 de Na3C3H5O7.2H2O, 0,71 mol.dm-3 de Na2CO3 e 0,16 mol.dm-3 (banho 1) e 0,04 mol.dm-3 de FeSO4.7H2O (banho 2). Foi adicionado 8,4 mL.L-1 de H2SO4 para manter o pH abaixo de 1. A eletrodeposição foi realizada sob controle galvanostático variando-se a densidade de corrente de 10 mA.cm-2 a 50 mA.cm-2, na temperatura ambiente (≡ 28ºC) e de 55ºC na presença e na ausência da radiação de ultra-som. Todos os revestimentos foram depositados em um disco de aço-carbono com área geométrica exposta de 0,7 cm2. A RDH foi estudada em solução de NaOH 0,5 mol.dm-3. Foi utilizada para todos os experimentos o eletrodo auxiliar de Pt e o eletrodo de referência de Hg/HgO, OH- (0,5 mol.dm-3). Os revestimentos foram caracterizados por Microscopia Eletrônica de Varredura (MEV), Voltametria Cíclica (VC) e as propriedades eletrocatalíticas das ligas de Ni-Fe foram avaliadas por Curva de Polarização de Tafel e por Operação Contínua. Os resultados mostraram que o ultra-som aumentou a quantidade de Fe eletrodepositada e as ligas obtidas sob a ação da radiação de ultra-som apresentaram o melhor desempenho para a RDH.