No description available.

Les MEMS et NEMS résonants sont d'excellents candidats pour la réalisation de systèmes de détection de gaz haute résolution et faible couts ayant des applications dans les domaines de la sécurité, la défense, l'environnement et la santé. Cependant, la question du choix des techniques de transduction est toujours largement débattue. La transduction piézoélectrique pourrait être avantageusement exploitée mais elle est encore peu connue à l'échelle nanométrique. L'objectif de cette thèse est donc de progresser vers la réalisation de capteur de gaz à haute résolution à l'aide résonateurs à base de micro / nano poutres piézoélectriques en couvrant la chaîne de prototypage complète depuis les techniques de dépôt des matériaux jusqu'à l'expérience de preuve de principe de mesure de gaz. Pour cela, notre première contribution concerne la modélisation analytique des performances et l'optimisation, design et système, d'un capteur de gaz à base de poutres résonantes piézoélectriques. En particulier, nous démontrons que la diminution de l'épaisseur du film piézoélectrique actif sous la barre des 100 nm permet d'atteindre les meilleures performances. La deuxième contribution concerne la fabrication, la caractérisation et la démonstration des performances capteur de poutres résonantes de 80 μm de long exploitant un film piézoélectrique en AlN de 50 nm d'épais. Ainsi nous avons démontré expérimentalement la stabilité fréquentielle exceptionnelle de ces dispositifs atteignant des déviations standard de l'ordre de 〖10〗^(-8), au niveau de l’état de l'art. Ainsi, ils permettent la détection de vapeurs Di -Methyl -méthyl- phosphonates, un simulateur de gaz sarin, avec des concentrations aussi faibles que 10 ppb. Bien que le niveau d'intégration de notre système de détection ne soit pas suffisant, ces résultats prouvent le fort potentiel de ces résonateurs cantilever piézoélectriques pour un développement industriel futur. / Resonant MEMS and NEMS are excellent candidate for the realization of low cost and high resolution gas sensing systems that have several applications in security, defense, and environment and health care domains. However, the question of the transduction technique used to couple micro or nano scale signals to the macro scale is still a key issue. Piezoelectric transduction can be advantageously exploited but has been rarely studied at the nano-scale. The objective of this PhD is thus to progress toward the realization of high-resolution gas sensor using piezoelectric micro/nano cantilevers resonators and cover the whole prototyping chain from device fabrication to proof of principle experiment. Our first contribution in this research relates the analytical modeling of the sensing performance and the system and design optimization. In particular we demonstrate that decreasing the piezoelectric active film thickness below 100 nm is particularly beneficial. The second contribution relates the fabrication, characterization and demonstration of the high sensing performances of 80 μm long cantilevers embedding a 50 nm thick piezoelectric AlN film for transduction. These devices exhibit state of the art performances in terms of resonance frequency deviation down to the 〖10〗^(-8) range. They allow thus the detection of Di-Methyl-Methyl-Phosphonate vapors, a sarin gas simulant, with concentration as low as 10 ppb. Although the level of integration of our sensing system is not sufficient for real life application, these results prove the high potential of these piezoelectric cantilever resonators for future industrial development.

Elastic and inelastic interactions are studied in tunnel junctions of a superconducting nanoelectromechanical setup and in response to resent experimental superconducting scanning tunneling microscope findings on a paramagnetic molecule. In addition, the electron density of molecular graphene is modeled by a scattering theory approach in very good agreement with experiment. All studies where conducted through the use of model Hamiltonians and a Green function formalism. The nanoelectromechanical system comprise two fixed superconducting leads in-between which a cantilever suspended superconducting island oscillates in an asymmetric fashion with respect to both fixed leads. The Josephson current is found to modulate the island motion which in turn affects the current, such that parameter regions of periodic, quasi periodic and chaotic behavior arise. Our modeled STM setup reproduces the experimentally obtained spin excitations of the paramagnetic molecule and we show a probable cause for the increased uniaxial anisotropy observed when closing the gap distance of tip and substrate. A wider parameter space is also investigated including effects of external magnetic fields, temperature and transverse anisotropy. Molecular graphene turns out to be well described by our adopted scattering theory, producing results that are in good agreement with experiment. Several point like scattering centers are therefore well suited to describe a continuously decaying potential and effects of impurities are easily calculated.

京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第17985号 / 工博第3814号 / 新制||工||1584(附属図書館) / 80829 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 川上 養一, 教授 藤田 静雄, 准教授 浅野 卓 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

La détection des déplacements nano-mécaniques par les techniques de transport électronique a atteint un haut niveau de sensibilité et de polyvalence. Afin de détecter l'amplitude d'oscillation d'un oscillateur nano-mécanique, une technique largement utilisée consiste à coupler ce mouvement de façon capacitive à un transistor à un seul électron ou, plus généralement, à un dispositif de transport, et à détecter la modulation haute fréquence du courant à travers le mélange non linéaire avec un signal électrique à une fréquence légèrement désaccordée. Cette méthode, connue sous le nom de technique de mélange des courants, est utilisée notamment pour la détection de nanotubes de carbone suspendus et s'est avérée particulièrement efficace, ce qui a permis d'obtenir des records de sensibilité dans la détection de masse et de force. Dans cette thèse nous étudions théoriquement les conditions qui limitent la sensibilité de cette méthode dans différents types de dispositifs de transport. La sensibilité est un compromis entre le bruit, le bruit de rétroaction et la fonction de réponse. Cette dernière est proportionnel au couplage électromécanique. Pour ces raisons dans la thèse, nous étudions la fonction de réponse, l'effet des fluctuations de courant et de déplacement (back-action) dans les dispositifs de détection suivants: (i) le transistor métallique à électron unique, (ii) le transistor à un seul niveau électronique et (iii) le point quantique cohérent. La sensibilité optimale est obtenue, comme d'habitude, lorsque la rétroaction du dispositif de détection est égale au bruit du signal intrinsèque, ce qui, dans notre cas, est le bruit en courant. Nous avons constaté que les valeurs optimales typiques du couplage sont obtenues dans la limite de couplage fort, où une forte renormalisation de la fréquence de résonance est observée et une bistabilité de l'oscillateur mécanique est présente [comme discuté dans G. Micchi, R. Avriller, F. Pistolesi, Phys. Rev. Lett. 115, 206802 (2015)]. Nous trouvons donc des limites supérieures à la sensibilité de la technique de détection de mélange des courants. Nous considérons également comment la technique du mélange des courants est modifiée dans la limite où le taux de transmission tunnel devient comparable à la fréquence de résonance de l'oscillateur mécanique / Detection of nanomechanical displacement by electronic transport techniques has reached a high level of sensitivity and versatility. In order to detect the amplitude of oscillation of a nanomechanical oscillator, a widely used technique consists of coupling this motion capacitively to a single-electron transistor or, more generally, to a transport device, and to detect the high-frequency modulation of the current through the nonlinear mixing with an electric signal at a slightly detuned frequency. This method, known as mixing-current technique, is employed in particular for the detection of suspended carbon nanotubes and has proven to be particularly successful leading to record sensitivities of mass and force detection. In this thesis we study theoretically the limiting conditions on the sensitivity of this method in different kind of transport devices. The sensitivity is a compromise between the noise, the back-action noise, and the response function. The latter is proportional to the electromechanical coupling. For these reasons in the thesis we study the response function, the effect of current and displacement (back-action) fluctuations for the following detection devices: (i) the metallic single electron transistor, (ii) the single-electronic level single electron transistor, and (iii) the coherent transport quantum dot. The optimal sensitivity is obtained, as usual, when the back-action of the detection device equals the intrinsic signal noise that, in our case, is the current noise. We found that the typical optimal values of the coupling are obtained in the strong coupling limit, where a strong renormalization of the resonating frequency is observed and a bistability of the mechanical oscillator is present [as discussed in G. Micchi, R. Avriller, F. Pistolesi, Phys. Rev. Lett. 115, 206802 (2015)]. We thus find upper bounds to the sensitivity of the mixing-current detection technique. We also consider how the mixing-current technique is modified in the limit where the tunneling rate becomes comparable to the resonating frequency of the mechanical oscillator.

No description available.

Ce travail de thèse porte sur l’étude de nouveaux phénomènes vibratoires dans les systèmes Nano-électromécaniques (NEMS) conçus à partir de nanofils (NFs) SiC ou de nanotubes de carbone (NCs) résonants. La configuration encastré-libre permet d'effectuer l'émission de champ (EC) pour caractériser nos échantillons et notamment mesurer le module de Young et le facteur de qualité (Q) de nos NEMS. Le chauffage du résonateur permet d'accroître fortement la valeur de Q des nanofils SiC (Qmax = 159 000). Les auto-oscillations observées sous EC sont obtenues seulement par l'application d'une tension continue et permettent un taux de conversion AC/DC de l'ordre de 50%. L'utilisation de NFs très résistifs couplée au courant d'EC est indispensable pour engendrer ces oscillations spontanées. La réalisation d'une nanoradio sous EC permet la démodulation d'un signal AM ou FM grâce à la résonance d'un NC. Nous décrivons une méthode originale pour exciter les vibrations d'un NF à partir du faisceau d'électrons d'un microscope électronique. L'évolution de la charge au bout du NF est la principale cause de ces auto-oscillations. La configuration encastré-encastré consiste à obtenir un transistor à base de NCs suspendus. Les composants sont caractérisés électriquement et mécaniquement dans un testeur sous pointe sous ultra vide à partir de techniques dites de mixing. La fréquence de résonance de ces échantillons est de l'ordre de 100 MHz et la démodulation d'un signal FM est réalisée pour la première fois dans cette configuration de NEMS. Pour l'ensemble des phénomènes découverts et traités dans ce manuscrit, un modèle et les simulations qui en découlent sont présentés et commentés / This thesis focuses on new phenomena in the mechanical resonances of SiC nanowires (NWs) and carbon nanotubes (CNs) of interest for the emerging field of nano-electro-mechanical systems (NEMS). The clamped-free confiuration allowed the study of our nanowire and nanotube samples by field emission (FE), including measuring the Young's modulus and the quality factor (Q). Heating NW resonators significantly increased their Q factor (Qmax = 159 000). Self-oscillations were observed during FE where only a DC voltage was applied, thus allowing DC/AC conversion with a rate of up to » 50%. Using highly resistive NWs coupled with FE current was required to generate these spontaneous oscillations. Achieving a nanoradio under FE allowed the demodulation of AM or FM signals through the mechanical resonance of CNs. We describe a new method to excite vibrations of a NW from the electron beam of an electron microscope. The evolution of the charge at the end of NW is the main source of these self-oscillations. The clamped-clamped configuration consists of a transistor based on suspended CNs. The devices are characterized electrically and mechanically in a probe station under ultrahigh vacuum with mixing techniques. The resonance frequencies of these samples was around 100 MHz. The demodulation of an FM signal was achieved for the first time in this NEMS configuration. For all the phenomena discovered and treated in this manuscript, a model and derived simulations are described and discussed

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2×2 up to 8×8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0º-180º capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased array switch elements is demonstrated in this chapter. An executive summary and conclusions sections are also included in the thesis.

This thesis presents an introduction to the design and simulation of a novel class of integrated photonic phased array switch elements. The main objective is to use nano-electromechanical (NEMS) based phase shifters of cascaded under-etched slot nanowires that are compact in size and require a small amount of power to operate them. The structure of the switch elements is organized such that it brings the phase shifting elements to the exterior sides of the photonic circuits. The transition slot couplers, used to interconnect the phase shifters, are designed to enable biasing one of the silicon beams of each phase shifter from an electrode located at the side of the phase shifter. The other silicon beam of each phase shifter is biased through the rest of the silicon structure of the switch element, which is taken as a ground. Phased array switch elements ranging from 2×2 up to 8×8 multiple-inputs/multiple-outputs (MIMO) are conveniently designed within reasonable footprints native to the current fabrication technologies. Chapter one presents the general layout of the various designs of the switch elements and demonstrates their novel features. This demonstration will show how waveguide disturbances in the interconnecting network from conventional switch elements can be avoided by adopting an innovative design. Some possible applications for the designed switch elements of different sizes and topologies are indicated throughout the chapter. Chapter two presents the design of the multimode interference (MMI) couplers used in the switch elements as splitters, combiners and waveguide crossovers. Simulation data and design methodologies for the multimode couplers of interest are detailed in this chapter. Chapter three presents the design and analysis of the NEMS-operated phase shifters. Both simulations and numerical analysis are utilized in the design of a 0º-180º capable NEMS-operated phase shifter. Additionally, the response of some of the designed photonic phased array switch elements is demonstrated in this chapter. An executive summary and conclusions sections are also included in the thesis.

Three-dimensional (3D) integration of micro- and nano-electromechanical systems (MEMS/NEMS) with integrated circuits (ICs) is an emerging technology that offers great advantages over conventional state-of-the-art microelectronics. MEMS and NEMS are most commonly employed as sensor and actuator components that enable a vast array of functionalities typically not attainable by conventional ICs. 3D integration of NEMS and ICs also contributes to more compact device footprints, improves device performance, and lowers the power consumption. Therefore, 3D integration of NEMS and ICs has been proposed as a promising solution to the end of Moore’s law, i.e. the slowing advancement of complementary metal-oxide-semiconductor (CMOS) technology.In this Ph.D. thesis, I propose a comprehensive fabrication methodology for heterogeneous 3D integration of NEM devices directly on top of CMOS circuits. In heterogeneous integration, the NEMS and CMOS components are fully or partially fabricated on separate substrates and subsequently merged into one. This enables process flexibility for the NEMS components while maintaining full compatibility with standard CMOS fabrication. The first part of this thesis presents an adhesive wafer bonding method using ultra-thin intermediate bonding layers which is utilized for merging the NEMS components with the CMOS substrate. In the second part, a novel NEM switch concept is introduced and the performance of CMOS-integrated NEM switch circuits for logic and computation applications is discussed. The third part examines two different packaging approaches for integrated MEMS and NEMS devices with either hermetic vacuum cavities or low-cost glass lids for optical applications. Finally, a novel fabrication approach for through silicon vias (TSVs) by magnetic assembly is presented, which is used to establish an electrical connection from the packaged devices to the outside world. / Tredimensionell (3D) integration av mikro- och nano-elektromekaniska system (MEMS/NEMS) med integrerade kretsar (ICs) är en ny teknik som erbjuder stora fördelar jämfört med konventionell mikroelektronik. MEMS och NEMS används oftast som sensorer och aktuatorer då de möjliggör många funktioner som inte kan uppnås med vanliga ICs.3D-integration av NEMS och ICs bidrar även till mindre dimensioner, ökade prestanda och mindre energiförbrukning av elektriska komponenter. Den nuvarande tekniken för complementary metal-oxide-semicondictor (CMOS) närmar sig de fundamentala gränserna vilket drastiskt begränsar utvecklingsmöjligheten för mikroelektronik och medför slutet på Moores lag. Därför har 3D-integration identifierats som en lovande teknik för att kunna driva vidare utvecklingen för framtidens elektriska komponenter.I denna avhandling framläggs en omfattande fabrikationsmetodik för heterogen 3D-integration av NEMS ovanpå CMOS-kretsar. Heterogen integration betyder att både NEMS- och CMOS-komponenter byggs på separata substrat för att sedan förenas på ett enda substrat. Denna teknik tillåter full processfrihet för tillverkning av NEMS-komponenter och garanterar kompatibilitet med standardiserade CMOS-fabrikationsprocesser.I den första delen av avhandlingen beskrivs en metod för att sammanfoga två halvledarskivor med en extremt tunn adhesiv polymer. Denna metod demonstreras för 3D-integration av NEMS- och CMOS-komponenter. Den andra delen introducerar ett nytt koncept för NEM-switchar och dess användning i NEM-switch-baserade mikrodatorchip. Den tredje delen presenterar två olika inkapslingsmetoder för MEMS och NEMS. Den ena metoden fokuserar på hermetisk vakuuminkapsling medan den andra metoden beskriver en lågkostnadsstrategi för inkapsling av optiska komponenter. Slutligen i den fjärde delen presenteras en ny fabrikationsteknik för så kallade ”through silicon vias” (TSVs) baserad på magnetisk självmontering av nickeltråd på mikrometerskala. / <p>20170519</p>