Dans la gamme de fréquence térahertz (THz), les sources et les détecteurs couramment utilisés en optique et en électronique présentent une chute de performances. Mon travail de thèse s’inscrit dans le cadre de la recherche de composants THz peu onéreux, compacts, accordables en fréquence et facile à intégrer. Le premier volet de mon travail de thèse concerne la détection THz et met à profit le couplage entre une onde incidente THz et des plasmons d’un gaz bidimensionnel d’électrons (2DEG) via des réseaux métalliques déposés au-dessus d’hétérostructures. Quatre puits quantiques à base de semi-conducteurs III/V(AlGaN/GaN, AlGaAs/GaAs, InAlN/GaN) et IV/IV (SiGe/Si/SiGe) ont été étudiés. Parmi les hétérostructures envisagées, celles réalisées à partir de matériaux III-N présentent les plus fortes résonances. Des mesures de spectre de transmission ont été effectuées avec un spectromètre à transformée de Fourier (FTIR) à température ambiante et cryogénique. Les modélisations numériques sont en bon accord avec les résultats expérimentaux. Une étude sur l’influence de la distribution homogène ou inhomogène du gaz d’électrons 2D est présentée. Le deuxième volet de la thèse concerne l’optimisation de la transmission THz. Les performances (dipsersions et les pertes) des guides d'onde planaires sont mal connues au THz. Nous avons choisi d’étudier des guides d’onde couramment utilisés en hyperfréquence. Dans un premier temps, la dispersion et les pertes (rayonnement, conduction et diélectrique) de lignes coplanaires (CPW) sur substrat polymère (BCB = benzocyclobutène) et substrat semiconducteur (InP) obtenues grâce à des modélisations numériques (Ansoft HFSS) entre 20 GHz et 1 THz sont présentées. Puis d’autres types de guides ont été envisagés tels que les lignes micro-ruban, à fente et triplaques sur substrat BCB avec HFSS et CST MWS. Leurs performances ont été comparées afin de dégager la structure la plus performante au THz. Des mesures entre 340 et 500 GHz ont pu aussi être réalisées pour les guides CPW. La comparaison avec les données numériques a montré un bon accord. / In the THz frequency gap between electronics and optics, the development of compact, tunable, less costly and room temperature operating sources, detectors, amplifiers and passive devices is growing. Electronic devices based on two dimensional (2D) plasmons in heterostructures open up the possibility of tunable emission and detection of THz radiation. For short distance THz transmission, the increased radiation loss as well as other types of loss (dielectric and ohmic loss) may handicap the applications of conventional planar waveguides well studied in the microwave band. Reevaluation of their propagation properties and comprehension of the physical nature of each kind of loss are necessary.This work is divided into two main sections. The first part deals with the optimization of THz resonant detection by quasi 2D plasmons-polaritons (PP) in the quantum wells (QW) among four heterostructures: III-V (AlGaN/GaN, InAlN/GaN, AlGaAs/GaAs) and IV-IV (SiGe/Si/SiGe). With the aid of metallic grating coupler, both ANSOFT HFSS and an indigenously developed program are used to investigate quantitatively the influences of structural parameters (grating period, metal strip width and thickness of barrier layer) and natural properties of 2D plasmons (electron concentration and mobility) on the PP resonances (frequency and amplitude) up to 5 THz. Transmission spectra of sample AlGaN/GaN have been measured by Fourier Transform Infrared Spectroscopy (FTIR) in 0.6-1.8 THz for various metal widths and at different temperatures to compare with the simulated results. At last, two types of modulated 2D electron gas in AlGaAs/GaAs are analyzed. One is the natural electron variation below and between metal fingers due to the difference between the barrier height at the interface metal/semiconductor and Fermi level pinning at the interface air/semiconductor. The other type is the forced modulated 2DEG by biasing voltage on metal fingers. These two parametric studies allow us to analyze and tune the frequency and amplitude of the THz detection. The second part separately studies the dispersions and attenuations of four waveguides (CPW, Microstrip, Stripline and Slotline) with the variation of geometric dimensions and properties of dielectric and metal by ANSOFT HFSS and CST MWS. Their performances are compared until 1 THz based on the same characteristic impedance. The advantages and the limitations of each waveguide are outlined and an optimal THz transmission line is proposed. Furthermore, preliminary measured attenuation of CPW in the frequency range 340-500 GHz are demonstrated and compared with numerical results. The design of transitions for adapting experimental probes by HFSS and the de-embedding method for extracting scattering and attenuation parameters of CPW by ADS are also presented..

Estruturas semicondutoras com dopagem planar são sistemas de considerável interesse tanto para a a pesquisa básica como para a aplicação em dispositivos. Neste trabalho caracterizamos estruturas semicondutoras com dopagem planar tipo n ou p, utilizando técnicas de espectroscopia ótica tais como fotoluminescencência (PL) e fotoluminescência-excitação (PLE). As amostras foram crescidas com a técnica de Epitaxia por Feixe Molecular (BEM, Molecular Beam Epitaxy) no Laboratório de Novos Materiais Semicondutores (LNMS) do IFUSP, com exceção das amostras com dopagem planar tipo p que foram crescidas nos laboratórios do Departamento de Física da Universidade Federal de Minas Gerais. Investigamos as propriedades eletrônicas de super-redes de GaAs com dopagem planar de silício, em função da concentração dos átomos dopantes, mantendo-se fixa a distância entre os planos de dopagem. Através da comparação de nossos resultados experimentais com os de cálculos autoconsistentes da estrutura eletrônica das super-redes, identificamos a origem de todas as emissões observadas nos espectros de PL. As emissões principais (denominada bandas B) foram identificadas como oriundas do processo de recombinação radiativa dos portadores do gás bidimensional de elétrons (2DEG) com buracos fotogerados na banda de valência. Outras emissões (denominadas bandas A) foram associadas com o processo de recombinação dos elétrons do 2DEG com impurezas de Carbono. Analisamos também amostras de poços quânticos de InGaAs/GaAs com dopagem planar de Silício. Nestes sistemas, devido à presença de impurezas (que atuam como centros de espalhamento) e variações na composição da liga de InGaAs (que dão origem à localização de buracos), transições com e /ou sem conservação de quase-momento envolvendo estados de buraco estendidos e/ou localizados constituem os possíveis processos de recombinação radiativa entre os elétrons do 2DEG e os buracos fotogerados. Neste trabalho, investigamos os processos de recombinação dos elétrons do 2DEG com os buracos gerados por excitação ótica comparando a forma de linha dos espectros experimentais e teóricos de PL. Estruturas semicondutoras de GaAs contendos um único plano de átomos de Berílio (dopagem tipo p ) também foram analisadas neste trabalho. Os resultados de nossas investigações evidenciam a existência de um potencial fotoinduzido, que confina os elétrons fotogerados. O processo de formação deste potencial é discutido neste trabalho. / Delta-doped semiconductor structures are systems of considerable interest for basic research and device applications. In this work, we performed the characterization of n or p-type semiconductor structures, using spectroscopic tecniques as photoluminescence (PL), photoluminescence-excitation (PLE) and selective photoluminescence (SPL). The samples were grown by Molecular Beam Epitaxy (BEM) at LNMS (Laboratório de Novos Materias Semicondutores) of IFUSP anda t Physical Department of UFMG. The electronic structure of Silicon delta-doped GaAs super-lattices with different donor concentrations in the delta-doped layer and a fixed distance between adjacent Si-doped layers was investigated. Though the comparison o four experimental results with the superlattices electronic structure calculated self-consistently we identified the origino f all observed in PL spectra structures. The principal emissions (denominated as bands B) are due to recombination of two-dimensional electron gás (due to delta doping) with photocreated holes in Valence band. Other spectral features (denominated as bands A) were associated with recombination of two dimensional electron gás and Carbon impurity. We analyzed PL spectra of InGaAs/GaAs quantum well samples with Silicon delta doping. In this systems recombination of electrons from two-dimensional gas with photocreated holes through the transitions with or without quase-momentum conservation were observed in PL spectra. Comparing experimental and theoretical lineshape, we are able to determine optical transitions in which holes in localize dor extended states took part. Localization of holes in Valence band is due to fluctuations in dopant distribution in the delta-doped layer. Moreover, GaAs with Beryllium delta doping (p-type) were analyzed in this work . Results o four investigation shown the existence of a photoinduced potential, which confine photocreated electrons in strutures of this type. Formation processo f this potential is discussed in this work.

Estruturas semicondutoras com dopagem planar são sistemas de considerável interesse tanto para a a pesquisa básica como para a aplicação em dispositivos. Neste trabalho caracterizamos estruturas semicondutoras com dopagem planar tipo n ou p, utilizando técnicas de espectroscopia ótica tais como fotoluminescencência (PL) e fotoluminescência-excitação (PLE). As amostras foram crescidas com a técnica de Epitaxia por Feixe Molecular (BEM, Molecular Beam Epitaxy) no Laboratório de Novos Materiais Semicondutores (LNMS) do IFUSP, com exceção das amostras com dopagem planar tipo p que foram crescidas nos laboratórios do Departamento de Física da Universidade Federal de Minas Gerais. Investigamos as propriedades eletrônicas de super-redes de GaAs com dopagem planar de silício, em função da concentração dos átomos dopantes, mantendo-se fixa a distância entre os planos de dopagem. Através da comparação de nossos resultados experimentais com os de cálculos autoconsistentes da estrutura eletrônica das super-redes, identificamos a origem de todas as emissões observadas nos espectros de PL. As emissões principais (denominada bandas B) foram identificadas como oriundas do processo de recombinação radiativa dos portadores do gás bidimensional de elétrons (2DEG) com buracos fotogerados na banda de valência. Outras emissões (denominadas bandas A) foram associadas com o processo de recombinação dos elétrons do 2DEG com impurezas de Carbono. Analisamos também amostras de poços quânticos de InGaAs/GaAs com dopagem planar de Silício. Nestes sistemas, devido à presença de impurezas (que atuam como centros de espalhamento) e variações na composição da liga de InGaAs (que dão origem à localização de buracos), transições com e /ou sem conservação de quase-momento envolvendo estados de buraco estendidos e/ou localizados constituem os possíveis processos de recombinação radiativa entre os elétrons do 2DEG e os buracos fotogerados. Neste trabalho, investigamos os processos de recombinação dos elétrons do 2DEG com os buracos gerados por excitação ótica comparando a forma de linha dos espectros experimentais e teóricos de PL. Estruturas semicondutoras de GaAs contendos um único plano de átomos de Berílio (dopagem tipo p ) também foram analisadas neste trabalho. Os resultados de nossas investigações evidenciam a existência de um potencial fotoinduzido, que confina os elétrons fotogerados. O processo de formação deste potencial é discutido neste trabalho. / Delta-doped semiconductor structures are systems of considerable interest for basic research and device applications. In this work, we performed the characterization of n or p-type semiconductor structures, using spectroscopic tecniques as photoluminescence (PL), photoluminescence-excitation (PLE) and selective photoluminescence (SPL). The samples were grown by Molecular Beam Epitaxy (BEM) at LNMS (Laboratório de Novos Materias Semicondutores) of IFUSP anda t Physical Department of UFMG. The electronic structure of Silicon delta-doped GaAs super-lattices with different donor concentrations in the delta-doped layer and a fixed distance between adjacent Si-doped layers was investigated. Though the comparison o four experimental results with the superlattices electronic structure calculated self-consistently we identified the origino f all observed in PL spectra structures. The principal emissions (denominated as bands B) are due to recombination of two-dimensional electron gás (due to delta doping) with photocreated holes in Valence band. Other spectral features (denominated as bands A) were associated with recombination of two dimensional electron gás and Carbon impurity. We analyzed PL spectra of InGaAs/GaAs quantum well samples with Silicon delta doping. In this systems recombination of electrons from two-dimensional gas with photocreated holes through the transitions with or without quase-momentum conservation were observed in PL spectra. Comparing experimental and theoretical lineshape, we are able to determine optical transitions in which holes in localize dor extended states took part. Localization of holes in Valence band is due to fluctuations in dopant distribution in the delta-doped layer. Moreover, GaAs with Beryllium delta doping (p-type) were analyzed in this work . Results o four investigation shown the existence of a photoinduced potential, which confine photocreated electrons in strutures of this type. Formation processo f this potential is discussed in this work.

Cette thèse présente des résultats obtenus dans deux domaines : la théorie des langages, et la théorie des graphes. En théorie des langages, on s’intéresse à des problèmes de caractérisation de classes de langages réguliers. Le problème générique consiste à déterminer si un langage régulier donné peut être défini dans un certain formalisme. Les méthodes actuelles font intervenir un problème plus général appelé séparation. On présente ici deux types de contributions : une généralisation d’un résultat de décidabilité au cadre des langages de mots infinis, ainsi que des bornes inférieures pour la complexité du problème de séparation. En théorie des graphes, on considère le problème classique de coloration de graphes, où on cherche à attribuer des couleurs aux sommets d’un graphe de sorte que les sommets adjacents reçoivent des couleurs différentes, le but étant d’utiliser le moins de couleurs possible. Dans le cas des graphes peu denses, la méthode de déchargement est un atout majeur. Elle a notamment joué un rôle décisif dans la preuve du théorème des quatre couleurs. Cette méthode peut être vue comme une construction non conventionnelle d’un schéma de preuve par induction, spécifique à la classe de graphes et à la propriété considérées, et où la validité du schéma est rarement immédiate. On utilise des variantes de la méthode de déchargement pour étudier deux types de problèmes de coloration. / In this thesis, we present results obtained in two fields: formal language theory and graph theory. In formal language theory, we consider some problems of characterization of classes of regular languages. The generic problem consists in determining whether a given regular language can be defined in a fixed formalism. The current approaches use a more general problem called separation. We present here two types of contributions: a generalization of a decidability result to the setting of infinite words, together with lower bounds for the complexity of the separation problem. In graph theory, we consider the classical problem of graph coloring, where we assign colors to vertices of a graph in such a way that two adjacent vertices receive different colors. The goal is to use the fewest colors. When the graphs are sparse, a crucial tool for this is the discharging method. It is most notably decisive in the proof of the Four-Color Theorem. This method can be seen as an unconventional construction of an inductive proof scheme, specific to the considered problem and graph class, where arguing the validity of the scheme is rarely immediate. We use variants of the discharging method to study two types of coloring problems.

This PhD dissertation reports the development of miniature ion optics components of a mass spectrometer (MS) with the ultimate goal to lay the foundation for a compact low-power micromachined MS (µMS) for broad-range chemical analysis. Miniaturization of two specific components a) RF ion traps and b) an ion funnel have been investigated and miniature low-power versions of these components have been developed and demonstrated successfully in lab experiments. Power savings, simpler electronics and packaging schemes required to operate the micro-scale RF cylindrical ion traps have been the key motivation driving this research. Microfabricated cylindrical ion traps (µCITs) and arrays in silicon, silicon-on-insulator and stainless steel substrates have been demonstrated and average power of as low as 55 mW for a low mass range (28 to 136 amu) and mass spectra with better than a unit-mass-resolution have been recorded. For the ion funnel miniaturization effort, simple assembly, small form factor and ease of integration have been emphasized. A simplification of the conventional 3D ion funnel design, called the planar ion funnel, has been developed in a single plate and has been tested to demonstrate ion funneling at medium vacuum levels (1E-5 Torr) using DC voltages and power less than 0.5 W. Miniaturization of these components also enables use of other novel ion optics components, packaging and integration, which will allow a new class of µMS architectures amenable for radical miniaturization.

A power supply is an essential part of all electronic devices. A switching mode power supply is a light weight power solution for most modern electronic equipment. The high frequency transformer is the backbone of modern switched mode power supplies. The skin effect and proximity effects are major problems in high frequency transformer design, because of induced eddy currents. These effects can result in transformers being destroyed and losing their power transferring function at high frequencies. Therefore, eddy currents are unwanted currents in high frequency transformers. Leakage inductance and the unbalanced magnetic flux distribution are two further obstacles for the development of high frequency transformers. Winding structures of power transformers are also a critical part of transformer design and manufacture, especially for high frequency applications. A new planar transformer with a helical winding structure has been designed and can maintain the advantages of existing planar transformers and significantly reduce the eddy currents in the windings. The maximum eddy current density can be reduced to 27% of the density of the planar transformer with meander type winding structure and 33% of the density of the transformer with circular spiral winding structure at an operating frequency of 1MHz. The voltage ratio of the transformer with helical winding structure is effectively improved to 150% of the voltage ratio of the planar transformer with circular spiral coils. With the evenly distributed magnetic flux around the winding, the planar transformer with helical winding structure is excellent for high frequency switching mode power supplies in the 21st Century.

A number of novel hydrocarbon cage systems have been designed and characterized using ab initio molecular orbital calculations at the MP2 and B3-LYP levels. In particular,equilibrium structures for five families of molecules, hemialkaplanes, hemispiroalkaplanes, alkaplanes, spiroalkaplanes and dimethanospiroalkaplanes, have been examined in detail with the aim of designing a saturated hydrocarbon with a planar-tetracoordinate carbon atom and with a view to identifying appropriate synthetic targets. ¶ The hemialkaplanes and hemispiroalkaplanes are constructed from a spiropentane or neopentane subunit, respectively, which is capped by a cyclic hydrocarbon. The hemispiroalkaplanes are predicted to contain a pyramidal-tetracoordinate carbon atom possessing a lone pair of electrons. Protonation at this apical carbon atom is found to be highly favorable, resulting in a remarkably high basicity for a saturated hydrocarbon. The proton affinities of the hemispiroalkaplanes are calculated to be more than 1170 kJ mol[superscript -1] , even greater than those for the diamine "proton sponges". ¶ The alkaplanes and the spiroalkaplanes, which are constructed by bicapping a neopentane or spiropentane subunit, respectively, with a pair of cyclic hydrocarbons, show unprecedented flattening of a tetracoordinate carbon atom. Linking the spiroalkaplane caps with methano bridges gives the dimethanospiroalkaplanes, two of which, dimethanospirooctaplane and dimethanospirobinonaplane, achieve exact planarity at the central carbon atom. They are the first neutral saturated hydrocarbons predicted to contain an exactly planartetracoordinate carbon atom. This has been achieved through structural constraints alone. The electronic structure at the central carbon atom results in a highest occupied molecular orbital corresponding to a p-type lone pair. Consequently, the adiabatic ionization energies for octaplane, spirooctaplane and dimethanospirooctaplane (approximately 5 eV) are predicted to be similar to those of lithium and sodium - incredibly low for a saturated hydrocarbon. ¶ Some consideration has been given to likely pathways for unimolecular decomposition for all species. Predicted structures, heats of formation and strain energies for all the novel hydrocarbons are also detailed. Tetramethylhemispirooctaplane and dimethanospirobinonaplane are identified as the preferred synthetic targets.

Ces travaux contribuent aux recherches menées par la communauté des électroniciens de puissance autour de l'intégration des convertisseurs. Notre étude se focalise sur les composants magnétiques utilisés dans ces convertisseurs d'une puissance de l'ordre de quelques W à quelques centaines de W. Cette étude commence par un travail de modélisation et de compréhension du comportement fréquentiel des matériaux magnétiques métalliques en rubans minces. Cette étude s'appuie sur une description des mécanismes d'aimantation que sont les déplacements de parois de Bloch et la rotation cohérente des moments magnétiques. Notre recherche continue par une étude technologique des procédés de mis en œuvre et de traitement thermique des alliages Fe-Ni Ces travaux aboutissent alors à la réalisation d'un prototype de composant extra-plat de type méandre, intégrable au PCB et utilisable dans les applications d'électronique de puissance.

<p>Laser scanners in combination with devices for accurate orientation like Coordinate Measuring Machines (CMM) are often used in Geometric Reverse Engineering (GRE) to measure point data. The industrial robot as a device for orientation has relatively low accuracy but the advantage of being numerically controlled, fast, flexible, rather cheap and compatible with industrial environments. It is therefore of interest to investigate if it can be used in this application.</p><p>This thesis will describe a measuring system consisting of a laser profile scanner mounted on an industrial robot with a turntable. It will also give an introduction to Geometric Reverse Engineering (GRE) and describe an automatic GRE process using this measuring system. The thesis also presents a detailed accuracy analysis supported by experiments that show how 2D profile data can be used to achieve a higher accuracy than the basic accuracy of the robot. The core topic of the thesis is the investigation of a new technique for planar segmentation. The new method is implemented in the GRE system and compared with an implementation of a more traditional method.</p><p>Results from practical experiments show that the new method is much faster while equally accurate or better.</p>

A graph Gis said to be an intersection graph of sets from a family of sets if there exists a function ƒ : V(G)→ such that for u,v V(G), (u,v) E(G) ƒ (u) ƒ (v) ≠ . Interval graphs are thus the intersection graphs of closed intervals on the real line and unit interval graphs are the intersection graphs of unit length intervals on the real line. An interval on the real line can be generalized to a “kbox” in Rk.A kbox B =(R1,R2,...,Rk), where each Riis a closed interval on the real line, is defined to be the Cartesian product R1x R2x…x Rk. If each Ri is a unit length interval, we call B a k-cube. Thus, 1-boxes are just closed intervals on the real line whereas 2-boxes are axis-parallel rectangles in the plane. We study the intersection graphs of k-boxes and k-cubes. The parameter boxicity of a graph G, denoted as box(G), is the minimum integer k such that G is an intersection graph of k-boxes. Similarly, the cubicity of G, denoted as cub(G), is the minimum integer k such that G is an intersection graph of k-cubes. Thus, interval graphs are the graphs with boxicity at most 1 and unit interval graphs are the graphs with cubicity at most 1. These parameters were introduced by F. S.Roberts in 1969. In some sense, the boxicity of a graph is a measure of how different a graph is from an interval graph and in a similar way, the cubicity is a measure of how different the graph is from a unit interval graph. We prove several upper bounds on the boxicity and cubicity of general as well as special classes of graphs in terms of various graph parameters such as the maximum degree, the number of vertices and the bandwidth. The following are some of the main results presented. 1. We show that for any graph G with maximum degree Δ , box(G)≤ Δ 22 . This result implies that bounded degree graphs have bounded boxicity no matter how large the graph might be. 2. It was shown in [18] that the boxicity of a graph on n vertices with maximum degree Δ is O(Δ ln n). But a similar bound does not hold for the average degree davof a graph. [18] gives graphs in which the boxicity is exponentially larger than davln n. We show that even though an O(davln n) upper bound for boxicity does not hold for all graphs, for almost all graphs, boxicity is O(davln n). 3. The ratio of the cubicity to boxicity of any graph shown in [15] when combined with the results on boxicity show that cub(G) is O(Δ ln 2 n) and O(2 ln n) for any graph G on n vertices and with maximum degree . By using a randomized construction, we prove the better upper bound cub(G) ≤ [4(Δ + 1) ln n.] 4. Two results relating the cubicity of a graph to its bandwidth b are presented. First, it is shown that cub(G) ≤ 12(Δ + 1)[ ln(2b)] + 1. Next, we derive the upper bound cub(G) ≤ b + 1. This bound is used to derive new upper bounds on the cubicity of special graph classes like circular arc graphs, cocomparability graphs and ATfree graphs in relation to the maximum degree. 5. The upper bound for cubicity in terms of the bandwidth gives an upper bound of Δ + 1 for the cubicity of interval graphs. This bound is improved to show that for any interval graph G with maximum degree , cub(G) ≤[ log2 Δ] + 4. 6. Scheinerman [54] proved that the boxicity of any outerplanar graph is at most 2. We present an independent proof for the same theorem. 7. Halin graphs are planar graphs formed by adding a cycle connecting the leaves of a tree none of whose vertices have degree 2. We prove that the boxicity of any Halin graph is equal to 2 unless it is a complete graph on 4 vertices, in which case its boxicity is 1.