Les nitrures d'éléments II-IV ZnSiN2, ZnGeN2 et ZnSnN2 forment une famille de semi-conducteurs liés aux nitrures d'éléments III (le GaN et ses alliages contenant de l'aluminium ou de l'indium). Ils s'obtiennent par construction en remplaçant l'élément III (Ga) périodiquement par un élément II (Zn) puis par un élément IV (Si, Ge ou Sn), ses voisins de gauche et de droite dans le tableau périodique. La structure cristalline qui en résulte est très proche de celle du GaN wurtzite. Le ZnGeN2 présente un désaccord de maille avec le GaN inférieur à 1%. Sa largeur de bande interdite est de quelques pour cents identique à celle du GaN et le large décalage de bande entre le GaN et le ZnGeN2 permet la formation d'une hétérostructure de type II. Ces données ont ouvert la voie à l'étude théorique de l'intégration des matériaux II-IV-N2 dans les zones actives de LEDs GaN. Ces puits quantiques de type II pourraient contribuer à améliorer les propriétés d'émission à grandes longueurs d'onde (verte et au-delà) des émetteurs à base de GaN. L'alliage ZnSn{x}Ge{1-x}N2 (de x = 0 à x = 1) étant peu connu, l'objectif de la thèse est de réaliser une étude expérimentale du matériau sous forme de couches minces élaborées par pulvérisation cathodique magnétron réactive. Ses propriétés structurales, optiques et électriques sont étudiées au moyen de différentes méthodes d'analyse. Il paraît ainsi possible de moduler son paramètre de maille a (de 3.22 A à 3.41 A) ainsi que la largeur de la bande interdite (de 2.1 eV pour le ZnSnN2 à 3.0 eV pour le ZnGeN2) mais également ses propriétés électriques sur plusieurs ordres de grandeur. L'utilisation de substrats de GaN permet, en outre, une analyse de l'interface entre les deux matériaux et l'étude des effets de quasi-épitaxie. / The II-IV-nitrides ZnSiN2, ZnGeN2 and ZnSnN2 represent a semiconductors family close to the III-nitrides (GaN and its aluminum and indium containing alloys). They are obtained by replacing periodically the group III element (Ga) by a group II element (Zn) and by a group IV element (Si, Ge or Sn), its left and right neighbors in the periodic table. The crystalline structure of ZnGeN2 is therefore really close to the one of wurtzite GaN. They show a lattice mismatch smaller than 1 %. The band gap of ZnGeN2 is almost identical to GaN and their large band offset enables the design of a type II heterostructure. These data set the stage for the theoretical study of II-IV-N2 integration into the active zones of GaN LEDs. These type II quantum wells could contribute to enhance the emission properties of GaN-based light emitters at high wavelengths (green and beyond). The ZnSn{x}Ge{1-x}N2 alloy (with x = 0 to x = 1) being rather unknown, the objective of this thesis is the experimental study of sputtered thin films of this material. Its structural, optical and electrical properties are investigated through different analysis methods. It seems possible to adjust its lattice parameter a (from 3.22 A to 3.41 A) as well as its band gap (from 2.1 eV for ZnSnN2 to 3.0 eV for ZnGeN2) but also its electrical properties on several orders of magnitude. The use of GaN substrates enables the investigation of the interface between both materials and quasi-epitaxy effects.

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<p>Renewable energy technologies and the development of cleaner and more environmentally friendly power have been at the forefront of research for the past few decades. Photovoltaic systems – systems that convert photon energy to electrical energy – are at the center of these research efforts. Decreasing the cost of energy production, through increasing the power conversion efficiency or decreasing the device cost, is a key factor in widespread use of these energy production systems. To increase the energy conversion efficiency, ideally, all useful photons should be absorbed by the solar cell; however, due to the large discontinuity in the refractive index at the solar cell/air interface, a large fraction of incidence light is lost due to reflection (30% loss in crystalline silicon cells). The currently used single and double layer anti-reflection coatings reduce the reflection losses, but their optimal performance is limited to a narrow range of wavelengths and angles of incidence. Moth-eye anti-reflection coatings are composed of patterned single layer films having a gradual decrease in refractive index from the solar cell surface to air. This study is focused on developing an inexpensive method for direct deposition of patterned films – in the form of moth-eye anti-reflection coatings – on solar cell surface.</p> <p>In this research, the creation of moth-eye anti-reflection coatings has been attempted through the process of electrodeposition. ZnO was chosen for the thin film material, and the ability to develop the required moth-eye structure by changing the electrodeposition parameters including temperature, applied potential, type and concentration of solution-borne species, and type of substrate was investigated. Using this method, pyramidal and hemispherical structures with a 100-200 nm diameter and 100-200 nm height were created directly on ITO substrates. Similar structures were also developed on silicon substrates. The anti-reflection properties of ZnO-coated silicon substrates were investigated by comparing their broadband and broad angle reflection-mode UV-VIS spectrum with uncoated silicon. The optimized ZnO-coated silicon substrate showed a reflectance of at most 20% for wavelengths between 400-1500 nm at angles of incidence less than 50^O.</p> / Master of Applied Science (MASc)