Made available in DSpace on 2014-06-11T19:30:18Z (GMT). No. of bitstreams: 0 Previous issue date: 2014-02-14Bitstream added on 2014-06-13T19:18:57Z : No. of bitstreams: 1 santos_kt_me_bauru.pdf: 2573333 bytes, checksum: 9b74b644f19dcb4ae279533899cad065 (MD5) / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / Estruturas dot-in-a-well (DWELL) têm sido extensivamente estudadas nos últimos anos devido a sua relevância para a fabricação de dispositivos ópticos e eletrônicos, em especial os fotodetectores e lasers de alto desempenho. inserir pontos quânticos (QDs) em poços quânticos (QWs) aumenta a densidade dos pontos quânticos que, somado ao confinamento adicional fornecido pelo poço quântico, resulta em eficiência óptica elevada. Muitos trabalhos se dedicam ao estudo da dinâmica dos portadores, a fim de compreender melhor o funcionamento dos dispositivos, principalmente em altas temperaturas. Em nosso estudo, as amostras DWELL, em que os pontos de InAs são confinados em poços de InGaAs, foram crescidas sobre um substrato de GaAs por epitaxia de feixe molecular (MBE) e analisadas a partir de medidas de fotoluminiscência (PL). Os pontos quânticos foram obtidos pelo método de Stranski-Krastanov. Para realizar as medidas de PL foi utilizado um monocromador Jobin Yvon T64000. As amostras foram inseridas em um criostato de Janis, com circuito fechado de He, e excitadas por um laser de Ar. O sinal da PL, depois de espalhado, foi detectado por um detector de Ge e registrado usando um amplificador lock-in. Nos espectros de emissão foram identificados três picos em medidas com alta potência de excitação e baixa temperatura. Os resultados das medidas de PL em função da potência de excitação indicaram que se tratava de transições entre níveis confinados nos QDs. Não foi identificado comportamento bi-modal no crescimento dos pontos quânticos nas amostras analisadas. Os resultados das medidas de PL, para diferentes regimes de excitação, mostraram que em todas as transições ópticas investigadas há éxcitons envolvidos e as recombinações não radiativas são insignificantes. Os gráficos de intensidade da PL integrada em função da... / The dot-in-well (DWELL) structure has been exensively studied in recent years because of its relevance to the fabrication of optical and electronic devides, in particular, high-performance photodetectors. The insertion of quantum dots (QD) in the well increases the density of dots which, added to the additional confinement provided by the quantum well, results in a higher optical efficiency. Many works has been devoted to the study of the dynamics carriers in order to properly understand the functioning of devices mostly at high temperatures. In our study, a DWELL sample, in which InAs QDs are confined in InGaAs wells, was grown on a GaAs substrate by molecular beam epitaxy (MBE) and was analyzed by photoluminescence (PL) measurements. The quantum dots were grown by typical Stranski-Krastanov method. The PL spectra were obtained in a T64000 Jobin Yvon Monochromator. The sample was inserted in a Janis He-closed-circuit crystat and excited using an Ar-ion laser. The PL signal, after dispersed, was detected by a Ge-detector and recorded using a loock-in amplifier. In the emission spectra is possible to identify 3 peaks in high power and low temperature. The results of PL measurements depending on the power excitation showed that the peaks are related to transitions between the confined levels in the QDs. Not been identified bi-modal behavior in the growth of quantum dots in the samples analyzed. The results of the PL measurments for different excitation regimes showed that in all the investigated optical transitions there excitons involved and non radiative recombinations are insignificant. The graphics of integrated PL intensity as a function or inverse temperature allowed finding different ranges of temperature and the activation energies associated with the processes of thermal escape of... (Complete abstract click electronic access below)

Orientadores: Jose Alexandre Diniz, Davies William de Lima Monteiro / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-15T05:03:14Z (GMT). No. of bitstreams: 1 Furtado_AndreSantosdeOliveira_M.pdf: 1676950 bytes, checksum: 4a916b5f14986722791efe6f19d7618a (MD5) Previous issue date: 2009 / Resumo: Sensores de Pixel Ativo (APS) baseados em tecnologia nMOS simples e com alta razão de aspecto podem apresentar boa sensibilidade para fotodetecção e oferecer uma opção de baixo custo para circuitos de sensoreamento de imagens. Neste trabalho são apresentados o leiaute, fabricação e caracterização de fotodiodos, transitores e APSs construídos no Centro de Componentes Semicondutores (CCS). Todas as etapas do projeto foram realizadas no CCS, incluindo as máscaras litográficas, fabricadas em um processo óptico. Foi utilizado um processo nMOS de 5[j,m, de porta metálica, com uma camada de metal para interconexões e apenas quatro níveis de litografia. Os dispositivos apresentam resultados satisfatórios e compatíveis ao comportamento previsto em simulações SPICE, indicando que podem obter bom desempenho em circuitos para aplicações específicas, como sensores ópticos de posição e sensores de frente de onda, em diversas áreas, como astronomia, oftalmologia e microscopia de força atômica (AFM) / Abstract: Active Pixel Sensors (APS) based on a simple nMOS technology with high aspect ratio may present good sensitivity to photodetection and offer a low cost option for image sensing circuits. This work presents the layout, fabrication and characterization of photodiodes, transistors and APSs built at the Center for Semiconductor Components (CCS). All the process stages took place in CCS, including the manufacturing of the lithography masks through an optical process. The technology used was an nMOS, 5[j,m, metal gate, with a single metal layer for interconnections and only four lithography levels. The devices presented satisfactory results, compatible to the behavior predicted by SPICE simulations, suggesting a good performance in application specific circuits, such as optical position sensitive detectors and wavefront sensors, and in several fields, such as astronomy, ophthalmology and atomic force microscopy (AFM) / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

Modern studies on charge transfer reaction and conductivity measurements of DNA have shown that the electrical behavior of DNA ranges from that of an insulator to that of a wide bandgap semiconductor. Based on this property of DNA, a metal-semiconductor-metal photodetector is fabricated using a self-assembled layer of deoxyguanosine derivative (DNA base) deposited between gold electrodes. The electrodes are lithographically designed on a GaN substrate separated by a distance L (50nm < L < 100nm). This work examines the electrical and optical properties of such wide-bandgap semiconductor based biomaterial systems for their potential application as photodetectors in the UV region wherein most of the biological agents emit. The objective of this study was to develop a biomolecular electronic device and design an experimental setup for electrical and optical characterization of a novel hybrid molecular optoelectronic material system. AFM results proved the usage of Ga-Polar substrate in conjugation with DG molecules to be used as a potential electronic based sensor. A two-terminal nanoscale biomolectronic diode has been fabricated showing efficient rectification ratio. A nanoscale integrated ultraviolet photodetector (of dimensions less than 100 nm) has been fabricated with a cut-off wavelength at ~ 320 nm.

M. S.

This paper presents the theory and results of three Moire methods 1) the incoherent projection Moire method, 2) the electronic phase detection method, and 3) the fringe multiplication method. It is proposed that these three methods be used together in a system to measure out-of-plane displacements of large diffusely reflecting surfaces. The operation of the system is divided into two processes. The first process records an incoherent moire pattern which contains the out-of-plane displacement information. The second process uses a transduced coherent image of the pattern produced in the first process to optically generate a quantitative result with variable sensitivity. The coherent processing is a technique that uses the fringe multiplication method with the electronic phase-detection method. The result is the quantitative, out-of-plane displacement measurement with sensitivity enhancement that can be altered during coherent processing of the Moire fringe pattern. / Master of Science

This thesis describes the implementation of a mechanical strain sensor which uses concentric core optical fiber waveguide as the sensing element. When this particular type of fiber is strained, a transfer of optical power occurs between propagating modes in the two concentric cylindrical cores of the fiber. This strain-induced redistribution of optical power may be detected at the output end of the fiber using either two separated optical detectors or a two dimensional detector array. The calibrated strain sensitivity of the sensor is reported and suggestions for continuing research are discussed. / M.S.

M.S.

Methods designed to improve the practicality of the elliptical-core two-mode optical fiber sensors for use in real-life applications are presented. The improvements include the development of insensitive lead fibers and an optical device which allows fringe counting at the output of the sensor. The insensitive leads eliminate extraneous perturbations and effectively isolate the sensing region. The fringe counting optics are designed to generate quadrature-phase shifted signals, thereby allowing the determination of whether the strain is increasing or decreasing. Work performed to advance the understanding of the effect of sensor placement within a composite specimen is also presented. Optical fiber sensors are embedded between different laminae of a graphite-epoxy composite panel, and the outputs of the sensors are shown to be proportional to the distance of the sensor from the neutral axis. / Master of Science

Optical fiber systems have been developed during the past twenty-five years with primary applications in long distance, high speed digital information communication. Optical fiber sensors have also been developed over the past fifteen years for the nondestructive inspection and evaluation of materials used in the aerospace, energy, transportation, and medical industries. Optical fibers may be used as the field-sensitive elements in sensors for the measurement of environmental parameters such as displacement, strain, temperature, vibration, chemical concentrations and electromagnetic fields. Their advantages for such measurements include 1) an inherent immunity to electromagnetic interference (EMD), 2) avoidance of ground loops, 3) the capability of responding to a wide variety of measurands, 4) excellent resolution, 5) the avoidance of sparks, especially important for applications within explosive environments, and 6) operation at temperatures of approximately 800°C for silica waveguides and above 1900°C for sapphire waveguides. Phase-modulated optical fiber sensors have been shown to possess the highest sensitivities to a given measurand. This dissertation describes several novel phase-modulated optical fiber sensors. The sensors described include a strain gage, a temperature sensor for applications up to and including 1700°C, a displacement sensor with sub-Angstrom resolution, and a vibration mode filter. For each sensing concept, a description and method of operation is given, followed by fabrication methods and experimental results. / Ph. D.

No description available.