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Les applications émergentes des nanocristaux de CdSe nécessitent une compréhension approfondie des propriétés d’émission et de relaxation des sous-niveaux de structure fine de l’exciton de bord de bande. Cette thèse porte sur l’étude spectroscopique de nanocristaux individuels de CdSe présentant une photostabilité remarquable aux températures cryogéniques. La distribution spectrale de leur photoluminescence en fonction de la température et d’un champ magnétique appliqué fournit une signature précise des niveaux de plus basse énergie, révélatrice de leur morphologie et leur structure cristalline. Une méthode d’excitation de la luminescence de haute résolution spectrale a été développée pour sonder la totalité des niveaux de structure fine. Les raies de recombinaison des huit états ont ainsi été résolues pour la première fois dans une situation de levée totale de dégénérescence produite par l’anisotropie des nanocristaux et l’application d’un champ magnétique. L’excitation sélective des nanocristaux dans les niveaux supérieurs de la structure fine permet aussi d’étudier les mécanismes de relaxation de spin entre les branches excitoniques à trou lourd et à trou léger. Des canaux de relaxation sélectifs peuvent notamment être mis à profit pour préparer un nanocristal dans un niveau quantique unique.Des nanocristaux à double coque ont été conçus pour être efficacement photo-chargés, produisant une émission stable à partir de l’exciton chargé (trion) à la température de l’hélium liquide. La recombinaison du trion est purement radiative, avec une signature spectrale caractérisée par une raie d’émission sans phonon unique et intense. Sous champ magnétique, son éclatement en quatre composantes Zeeman livre les facteurs de Landé de l’électron et du trou. L’analyse des poids de ces composantes permet aussi de trouver le taux de relaxation de spin du trion et le signe de sa charge. Une inhibition remarquable de la relaxation de spin se produit lorsque l’éclatement Zeeman est inférieur à l’énergie du premier mode de phonons acoustiques du nanocristal. / The development of emerging applications of CdSe nanocrystals requires a detailed understanding of the band-edge exciton fine structure and relaxation pathways. This thesis is focused on cryogenic spectroscopy of single nanocrystal with a remarkable photostability. Photoluminescence spectra as a function of temperature and under external magnetic fields provide a spectral fingerprint of the low energy sub-levels, revealing the morphology and the crystal structure of individual nanocrystals. In order to probe the entire band-edge exciton fine structure, a high resolution luminescence excitation technique has been developed. Zeeman and anisotropy-induced splittings are used to reveal the entire 8-state band-edge fine structure, enabling complete comparison with band-edge exciton models. State selective excitation allows the preparation of single quantum states. It is also used to map the hole spin relaxation pathways between the fine structure sub-levels.Charged quantum dots provide an important platform for a range of emerging quantum technologies. Double shell CdSe nanocrystals are engineered to efficiently ionize at cryogenic temperatures, resulting in trion emission with a single sharp zero-phonon line and a near-unity quantum yield. Zeeman splitting of this line enables direct determination of electron and hole g-factors. Spin relaxation is observed in high fields, enabling identification of the trion charge. Importantly, we show that spin flips are completely inhibited for Zeeman splittings below the low-energy bound for confined acoustic phonons. This charac- teristic unique to colloidal quantum dots has potential applications in single spin coherent manipulation.

Made available in DSpace on 2014-12-17T15:14:50Z (GMT). No. of bitstreams: 1 PauloDSJ.pdf: 1532738 bytes, checksum: 94763a76a879a203043b73e771013af5 (MD5) Previous issue date: 2005-11-12 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / We study the optical-phonon spectra in periodic and quasiperiodic (Fibonacci type) superlattices made up from III-V nitride materials (GaN and AlN) intercalated by a dielectric material (silica - SiO2). Due to the misalignments between the silica and the GaN, AlN layers that can lead to threading dislocation of densities as high as 1010 cm−1, and a significant lattice mismatch (_ 14%), the phonon dynamics is described by a coupled elastic and electromagnetic equations beyond the continuum dielectric model, stressing the importance of the piezoelectric polarization field in a strained condition. We use a transfer-matrix treatment to simplify the algebra, which would be otherwise quite complicated, allowing a neat analytical expressions for the phonon dispersion relation. Furthermore, a quantitative analysis of the localization and magnitude of the allowed band widths in the optical phonon s spectra, as well as their scale law are presented and discussed / Neste trabalho estudamos o espectro de f?nons ?pticos em estruturas peri?dicas e quasiperi?dicas (tipo Fibonacci) compostas pelos nitretos da fam?lia dos semicondutores III-V (GaN and AlN) intercalados por um material diel?trico (s?lica-SiO2). Devido ao desalinhamento entre as camadas da s?lica e do GaN, AlN, que pode levar a deslocamentos at?micos com densidade eletr?nica t?o alta quanto 1010 cm−1, e uma diferen?a de par?metro de rede (_ 14%), a din?mica dos f?nons ser? descrita por meio de um modelo te?rico em que as equa??es eletromagn?ticas e el?sticas est?o acopladas atrav?s do tensor piezoel?trico, ressaltando o campo de polariza??o piezoel?trica presente. Usamos tamb?m um tratamento de matriz transfer?ncia para simplificar a ?lgebra do problema, que seria, caso contr?rio, bastante complicada, permitindo uma express?o anal?tica elegante para a curva de dispers?o dos f?nons. Al?m disso, uma an?lise quantitativa da localiza??o e magnitude das larguras de bandas de energia permitida no espectro dos f?nos ?pticos, assim como a sua lei de escala s?o apresentados e discutidos

Nós calculamos o efeito da interação elétron-fonons longitudinais óticos (LO) sobre a energia de transição ls &#8594 2p+ entre os níveis de uma impureza doadora, localizada em um poço quântico de GaAs-AlxGa1-xAs. Nossos resultados para a energia de transição em função do campo magnético aplicado mostram claramente, que a saturação da energia de transição (efeito pinning) ocorre na energia dos fônons LO, em boa concordância com recentes dados experimentais. Obtemos também a massa de cíclotron de polarons confinados em fios quânticos quase-unidimensionais, com potencial de confinamento parabólico. Observamos que o comportamento da massa é diferente daquele para sistemas bi-dimensionais e que esta diferença é maior quanto maior o potencial de confinamento. Para a heterojunção de GaAs-AlGaAs e GaAs-GaSb, investigamos a importância da interação elétron-fonons interfaciais sobre a massa de cíclotron. Verificamos que a contribuição dos fonons interfaciais é fundamental nas regiões próximas às resonâncias, onde domina o espectro. Finalmente, calculamos a energia de ligação de uma impureza hidrogenóide, localizada no centro de um ponto quântico circular de GaAs-AlGaAs. Na ausência de campo magnético aplicado, obtivemos uma expressão analítica para a função de onda do elétron ligado. Notamos, que a influência do campo magnético sobre a energia de ligação é fraca nas regiões de pequenos raios, devido ao forte potencial de confinamento. / We calculate the effects of the electron-longitudinal optical (LO) phonons interaction on the intra donor ls &#8594 2p+ transition energy in GaAs-AlGaAs quantum wells structures. Our results to the transition energy as a function of the magnetic Field strength, show that the pinning effect occur in the phonon LO energy in good agreement with recent experimental data. The cyclotron mass of polarons confined in quasi.one.dimensional quantum-well wires with parabolic confinement potential, is also obtained. The behavior of electrons effective mass with magnetic field is different, of the two-dimensional systems, and the difference increase when the confinement potential increase. To heterojunctions of GaAs-AlAs and GaAs-GaSb, we investigate the electroninterfacials optical (IO) phonons interactions on the effective cyclotron mass. We find that the electron-IO-phonons interaction is fundamental near the resonances, where they dominate the spectra. Finally, the ground state binding energy of donor impurity, placed in the center of a circular quantum dot is calculated. Without magnetic field, we obtained the analytic expression to the bound electron wave function. The influence of the magnetic field on the donor binding energy is weaker, when the radius of the quantum dot became smaller.

Electrical and optical characterizations of heterostructures and thin films based on group III-V compound semiconductors are presented. Optical properties of GaMnN thin films grown by Metalorganic Chemical Vapor Deposition (MOCVD) on GaN/Sapphire templates were investigated using IR reflection spectroscopy. Experimental reflection spectra were fitted using a non - linear fitting algorithm, and the high frequency dielectric constant (ε∞), optical phonon frequencies of E1(TO) and E1(LO), and their oscillator strengths (S) and broadening constants (Γ) were obtained for GaMnN thin films with different Mn fraction. The high frequency dielectric constant (ε∞) of InN thin films grown by the high pressure chemical vapor deposition (HPCVD) method was also investigated by IR reflection spectroscopy and the average was found to vary between 7.0 - 8.6. The mobility of free carriers in InN thin films was calculated using the damping constant of the plasma oscillator. The terahertz detection capability of n-type GaAs/AlGaAs Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) structures was demonstrated. A threshold frequency of 3.2 THz (93 µm) with a peak responsivity of 6.5 A/W at 7.1 THz was obtained using a 0.7 µm thick 1E18 cm−3 n - type doped GaAs emitter layer and a 1 µm thick undoped Al(0.04)Ga(0.96)As barrier layer. Using n - type doped GaAs emitter layers, the possibility of obtaining small workfunctions (∆) required for terahertz detectors has been successfully demonstrated. In addition, the possibility of using GaN (GaMnN) and InN materials for terahertz detection was investigated and a possible GaN base terahertz detector design is presented. The non - linear behavior of the Inter Pulse Time Intervals (IPTI) of neuron - like electric pulses triggered externally in a GaAs/InGaAs Multi Quantum Well (MQW) structure at low temperature (~10 K) was investigated. It was found that a grouping behavior of IPTIs exists at slow triggering pulse rates. Furthermore, the calculated correlation dimension reveals that the dimensionality of the system is higher than the average dimension found in most of the natural systems. Finally, an investigation of terahertz radiation efect on biological system is reported.

Nós calculamos o efeito da interação elétron-fonons longitudinais óticos (LO) sobre a energia de transição ls &#8594 2p+ entre os níveis de uma impureza doadora, localizada em um poço quântico de GaAs-AlxGa1-xAs. Nossos resultados para a energia de transição em função do campo magnético aplicado mostram claramente, que a saturação da energia de transição (efeito pinning) ocorre na energia dos fônons LO, em boa concordância com recentes dados experimentais. Obtemos também a massa de cíclotron de polarons confinados em fios quânticos quase-unidimensionais, com potencial de confinamento parabólico. Observamos que o comportamento da massa é diferente daquele para sistemas bi-dimensionais e que esta diferença é maior quanto maior o potencial de confinamento. Para a heterojunção de GaAs-AlGaAs e GaAs-GaSb, investigamos a importância da interação elétron-fonons interfaciais sobre a massa de cíclotron. Verificamos que a contribuição dos fonons interfaciais é fundamental nas regiões próximas às resonâncias, onde domina o espectro. Finalmente, calculamos a energia de ligação de uma impureza hidrogenóide, localizada no centro de um ponto quântico circular de GaAs-AlGaAs. Na ausência de campo magnético aplicado, obtivemos uma expressão analítica para a função de onda do elétron ligado. Notamos, que a influência do campo magnético sobre a energia de ligação é fraca nas regiões de pequenos raios, devido ao forte potencial de confinamento. / We calculate the effects of the electron-longitudinal optical (LO) phonons interaction on the intra donor ls &#8594 2p+ transition energy in GaAs-AlGaAs quantum wells structures. Our results to the transition energy as a function of the magnetic Field strength, show that the pinning effect occur in the phonon LO energy in good agreement with recent experimental data. The cyclotron mass of polarons confined in quasi.one.dimensional quantum-well wires with parabolic confinement potential, is also obtained. The behavior of electrons effective mass with magnetic field is different, of the two-dimensional systems, and the difference increase when the confinement potential increase. To heterojunctions of GaAs-AlAs and GaAs-GaSb, we investigate the electroninterfacials optical (IO) phonons interactions on the effective cyclotron mass. We find that the electron-IO-phonons interaction is fundamental near the resonances, where they dominate the spectra. Finally, the ground state binding energy of donor impurity, placed in the center of a circular quantum dot is calculated. Without magnetic field, we obtained the analytic expression to the bound electron wave function. The influence of the magnetic field on the donor binding energy is weaker, when the radius of the quantum dot became smaller.