Ce travail rapporte le développement et la validation d’un système de mesure pour l’étude cinématique des rotations du genou en 3 dimensions. Pour cela, nous avons dans un premier temps étudié in‐vitro les avantages apportés par un système de mesure de référence par rapport à l’évaluation du clinicien. Dans un second temps, nous avons développé un outil de mesure optoélectronique utilisable dans un contexte clinique. Nous avons réalisé une étude de reproductibilité de ce système pour des mesures de rotation interne‐externe en charge sur une série de sujets sains. Enfin, nous avons utilisé le système en condition réelle lors d’une étude clinique de revue à 2 ans de recul. 16 sujets opérés d’une rupture partielle du LCA ont été revus lors d’une consultation. Des mesures de rotation interne‐externe du genou en charge ainsi que des mesures de proprioception ont été réalisées. / The purpose of this work was to develop and to validate a new device for clinical 3D rotational kinematic evaluation of the knee. With this aim in view, we demonstrated in‐vitro the advantages of using a device for clinical evaluation of the knee. After, we developed a clinical opto‐electronic device. We validated it with a protocol for knee examination during an active weight bearing test of rotational laxity on healthy subjects. Last, the device was used in actual conditions for a clinical study. 16 patients were examined 2 years after an ACL partial reconstruction. Weight bearing tests of rotational laxity and proprioception evaluation were performed on the patients.

This thesis describes the fabrication and characterization of two-dimensional transition dichalcogenides (2D TMDs) nanolayers for various applications in electronic and opto-electronic devices applications. In Chapter 1, crystal and optical structure of TMDs materials are introduced. Many TMDs materials reveal three structure polytypes (1T, 2H, and 3R). The important electronic properties are determined by the crystal structure of TMDs; thus, the information of crystal structure is explained. In addition, the detailed information of photon vibration and optical band gap structure from single-layer to bulk TMDs materials are introduced in this chapter. In Chapter 2, detailed information of physical properties and synthesis techniques for molybdenum disulfide (MoS2), tungsten disulfide (WS2), and molybdenum ditelluride (MoTe2) nanolayers are explained. The three representative crystal structures are trigonal prismatic (hexagonal, H), octahedral (tetragonal, T), and distorted structure (Tʹ). At room temperature, the stable structure of MoS2 and WS2 is semiconducting 2H phase, and MoTe2 can reveal both 2H (semiconducting phase) and 1Tʹ (semi-metallic phase) phases determined by the existence of strains. In addition, the pros and cons of the synthesis techniques for nanolayers are discussed. In Chapter 3, the topic of synthesized large-scale MoS2, WS2, and MoTe2 films is considered. For MoS2 and WS2 films, the layer thickness is modulated from single-layer to multi-layers. The few-layer MoTe2 film is synthesized with two different phases (2H or 1Tʹ). The all TMDs films are fabricated using two-step chemical vapor deposition (CVD) method. The analyses of atomic force microscopy (AFM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL), and Raman spectroscopy confirm that the synthesis of high crystalline MoS2, WS2, and MoTe2 films are successful. The electronic properties of both MoS2 and WS2 exhibit a p-type conduction with relatively high field effect mobility and current on/off ratio. In Chapter 4, vertically-stacked few-layer MoS2/WS2 heterostructures on SiO2/Si and flexible polyethylene terephthalate (PET) substrates is presented. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) show the structural integrity of two distinct 2D TMD layers with atomically sharp van der Waals (vdW) heterointerfaces. Electrical transport measurements of the MoS2/WS2 heterostructure reveal diode-like behavior with current on/off ratio of ~ 104. In Chapter 5, optically uniform and scalable single-layer Mo1-xWxS2 alloys are synthesized by a two-step CVD method followed by a laser thinning. Post laser treatment is presented for etching of few-layer Mo1-xWxS2 alloys down to single-layer alloys. The optical band gap is controlled from 1.871 to 1.971 eV with the variation in the tungsten (W) content, x = 0 to 1. PL and Raman mapping analyses confirm that the laser-thinning of the Mo1-xWxS2 alloys is a self-limiting process caused via heat dissipation to SiO2/Si substrate, resulting in fabrication of spatially uniform single-layer Mo1-xWxS2 alloy films.