Cette thèse porte sur les applications optiques de films d’oxynitrures de silicium dopés cérium et co-dopés cérium-ytterbium élaborés par pulvérisation cathodique magnétron radiofréquence. Les paramètres de dépôt ont été optimisés afin d’obtenir une intense émission visible à l’œil nu des ions Ce3+ dans la matrice hôte SiOxNy. Il est démontré que le flux d’azote est un paramètre crucial pour obtenir cette émission. Nous avons montré aussi que les ions Ce3+ peuvent être incorporés en grande quantité dans cette matrice, sans clusterisations jusqu’à de très hautes températures de recuits (1200°C). Ces excellentes propriétés optiques ont mené à une première application : la tentative d’élaboration de DEL bleue. Les premiers résultats obtenus montrent une électroluminescence peu intense, mais restent encourageants pour une étude plus approfondie. La deuxième application étudiée est le développement de couches à conversion de fréquence basse pour augmenter le rendement des cellules solaires à base de silicium. En effet les cellules solaires sont limitées par le recouvrement du spectre solaire et la plage d’absorption de la cellule. L’élaboration de films SiOxNy co-dopés Ce/Yb pour convertir un photon ultra-violet (300-400 nm) en deux photons infra-rouges (980 nm) permet de passer outre la limite théorique des cellules solaires. Les systèmes élaborés montrent une émission des ions Yb3+ en présence d’ions Ce3+ dans la matrice hôte SiOxNy. Les ions Ce3+ permettent d’excités les ions Yb3+ sur une large gamme spectrale et le mécanisme de transfert d’énergie entre ces deux terres rares est détaillé. Un rendement de conversion de 185% est obtenu pour la plus forte concentration en ions Yb3+. Pour améliorer ce système, l'ajout de miroirs de Bragg entre la couche à conversion et le substrat de silicium, représentant la cellule solaire, a été étudié théoriquement. Leur but est double : maximiser le flux de photons ultraviolets piégé dans la couche à conversion de fréquence et transmettre un maximum de photons infrarouges, qui sont facilement absorbables, vers la cellule solaire. / This thesis is dedicated to cerium doped and cerium-ytterbium co doped oxynitride silicon films optical applications grown by radio frequency magnetron sputtering. Growth parameters have been optimized in order to obtain a strong cerium emission visible to the naked eye in the matrix host SiOxNy, especially the nitrogen flux has a dominant role. We showed that cerium ions have a high solubility without clustering at very high annealing temperature (1200°C). Those excellent properties lead to a first application: the elaboration of blue LED. First results show a weak electroluminescence signal but are still encouraging for further study. The second application is the elaboration of frequency conversion layers to increase the efficiency of Si based solar cell. Indeed solar cell are limited by the mismatch between the solar spectrum and the cell absorption range. The elaboration of Ce/Yb co doped SiOxNy films to convert a UV photon (300-400 nm) into two infrared photons (980 nm) allows to overcome the solar cell theoretical limit. Layers grown show an Yb3+ ion emission in presence of Ce3+ ions in the host matrix SiOxNy. Ce3+ ions sensitize Yb3+ ions on a large spectral range and their cooperative energy transfer mechanism is detailed. An efficiency of 185% is obtained for the higher dopants atomic concentration. In order to improve this system, the effect of adding Bragg mirrors placed between the conversion layer and the silicon substrate, which represents the solar cell, is theoretically studied. Their aim is double: increase the maximum flux of UV photons trapped in the frequency conversion layer and transmit a maximum of infrared photons, which are easily absorbable, toward the solar cell.

Neste trabalho, filmes amorfos de oxinitreto de silício (alfa-SiO IND.XN IND.Y:H) foram crescidos pelo processo de Plasma Enhanced Chemical Vapor Deposition (PECVD) a temperatura da 320ºC. No processo de deposição foi utilizada a mistura dos gases óxido nitroso (N IND.2O) e silano (SiH IND.4), variando-se a razão entre os seus fluxos (Re= N2O/SiH4) num intervalo de 0,25 Re 5,00. Foram obtidos filmes com diferentes composições químicas, sendo ricos em O (65 at.%) para Re 2,00 e ricos em Si (44 at. %) para Re 1,50. A técnica de Rutherford backscattering spectroscopy (RBS) foi utilizada para determinar a composição química dos filmes. Os dados de RBS mostram um decréscimo da quantidade de O, enquanto que as quantidades de Si e N aumentam com o decréscimo de Re. A morfologia dos filmes foi estudada por Small Angell X-ray scattering (SAXS), Transmissio Electron Microscopy (TEM) e medida de densidade pelo método de flutuação. Os dados de SAXS revelam a presença de centros espalhadores com raio médio que varia de 10 Ã a 100 Ã. Os resultados de TEM mostram a presença de aglomerados esféricos dispersos numa matriz de mesmas espécies atômicas. A concentração de poros nos filmes é inferior a 10% e diminui com o aumento do conteúdo de oxigênio. Tanto a estrutura de ordem local quanto as ligações químicas foram investigadas pelas técnicas de X-ray Absorption Near Edge Structure (XANES), Extented X-ray Absorption Fine Structure (EXAFS) e Fourier Transform Infrared Spectroscopy (FTIR). foi desenvolvido um potencial modelo de interação para simular a estrutura atômica do oxinitreto de silício amorfo e compará-la com os dados experimentais. As simulações computacionais foram realizadas utilizando o método de Monte Carlo (MC)-Metropolis. A análise estrutural das amostras ricas em O, tanto do ponto de vista experimental quanto teórico (obtidos por MC), mostram que a estrutura básica da rede é um tetraedro, onde o átomo central é o Si conectado por O e N. Os resultados experimentais das amostras ricas em si, apontam para a formação de agregados de Si, embebidos dentro de uma matriz de Si-O-N. Tratamentos térmicos a vácuo em temperaturas entre 550 e 1000 ºC promovem a efusão de hidrogênio e segregação de diferentes fases. / In this work, thin films of amorphous silicon oxynitride(alfa-SiOxNy:H) were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 320 ºC. In the deposition process a mixture of nitrous oxide (N2O) and silane (SiH4) was used, varying their flow ratio (Re= N2O/SiH4) in an interval of 0,25 Re 5,00. Films with different chemical composition were obtained, being O-rich (65 at.%) for Re 2,00 and Si-rich (44 at.%) for Re 1,50. The Rutherford backscattering spectroscopy (RBS) was used to determine the atomic content of the films. The RBS data showed a decrease of the oxygen content while the Si and N contents increase with the decrease of Re. The films morphology was studied by Small Angle X-ray scattering (SAXS), Transmission Electron Microscopy (TEM) and density measurements by the flotation method. The SAXS data revealed the presence of scattering centers with mean radius from 10 Ã to 100 Ã. The TEM data showed the presence of spherical clusters dispersed in a matrix of the same atomic species. The concentration of pores in the material is less than 10% and decreases with the increase of oxygen content. The local atomic structure and chemical bonds were investigated by X-ray Absorption Near Edge Structure (XANES), Extended X-ray Absorption Fine Structure (EXAFS) and Fourier Transform Infrared spectroscopy (FTIR). A model of interatomic potential was developed to simulate the atomic structure of the amorphous silicon oxynitride in order to be compared with the experimental data. The computer simulations were performed by the Monte Carlo (MC) Metropolis method. The structural analysis of the O-rich samples, obtained by both experimental and theoretical simulations (obtained by MC), showed that the basic structure of the network is tetrahedral, being Si the central atom connected by O and N. The experimental results of the Si-rich samples indicate the formation of Si aggregates, embedded in a Si-O-N matrix. Annealing in vacuum, at temperatures between 550 e 1000 ºC, promoted hydrogen effusion and segregation of different phases.

Foram estudados filmes de oxinitreto de silício obtidos por PECVD à 320°C, a partir da mistura gasosa de N2O+SiH4+He, com diferentes valores de pressão e potência de deposição com o objetivo de produzir boa qualidade de interface deste material com o Si e de obter uma baixa densidade de carga efetiva visando a aplicação desses filmes em dispositivos semicondutores MOS. Os resultados mostraram que com uma pressão de deposição de 0,160 mbar e potências menores que 125 W/cm2 é possível obter um valor de densidade de estados de interface (Dit) de 4x1010 eV-1.cm-2, campo elétrico de ruptura (Ebd) de 13 MV/cm, valores comparáveis ao SiO2 térmico e uma densidade de carga efetiva (Nss) de 4x1011 cm-2. Segundo resultados experimentais esse valor de Nss é o mínimo possível que se pode atingir com a limpeza química utilizada em nosso laboratório. Pode-se dizer que estes são resultados bastante interessantes considerando que se trata de um material obtido por PECVD à baixa temperatura, porém viável para aplicação em dispositivos MOS. Iniciando os estudos com dielétricos de maiores valores de constante dielétrica optamos por estudar filmes de TiOx (k=40-100), obtidos por sputtering reativo, a partir da mistura gasosa de Ar+O2 e utilizando alvo de Ti. Foram fabricados capacitores MOS com estes filmes e obteve-se valores de constante dielétrica que variaram de 40-160. Porém esses materiais ainda apresentavam valores apreciáveis de corrente de fuga que foram minimizadas em ordens de grandeza quando utilizados dielétricos de dupla camada com SiO2 ou SiOxNy (otimizado neste trabalho) na interface, além de se observar uma melhora significativa da qualidade de interface. Utilizando dupla camada dielétrica com filmes de SiOxNy e SiO2, ainda espessos (³ 1nm) para camada intermediária, obteve-se uma constante dielétrica efetiva em torno de 20. Vale ressaltar que os dois filmes SiOxNy e TiOx, conseqüentemente a dupla camada, foram fabricados a baixas temperaturas. / Silicon oxynitride films obtained by the PECVD technique from N2O+SiH4+He gaseous mixtures, at 320°C, with different deposition pressure and RF power were studied intending to improve the interface quality with Si, decreasing the effective charge density and the interface state density in order to utilize them in MOS semiconductor devices. The results showed that with a deposition pressure of 0.160 mbar and a RF power density lower than 125 W/cm2 it is possible to obtain interface state density (Dit) values of 4x1010 eV-1.cm-2, Electrical Breakdown (Ebd) of 13 MV/cm, comparable with the obtained for thermally grown SiO2 , and an effective charge density (Nss) of 4x1011 cm-2. According with experimental results this Nss value is the minimum attainable with our chemical cleaning process. In this way it can be said that these results are very promising, considering that these materials were obtained by PECVD at low temperatures, but still viable for MOS devices application. In order to initiate studies with high dielectrics constant material, TiOx films (k= 40-180), obtained by reactive sputtering through the Ar+O2 gaseous mixture utilizing a Ti target, were chosen. MOS capacitors with these films were fabricated and dielectric constant values varying from 40 to 160 were obtained. However, until now, these materials have presented appreciable leakage current values, which were, minimize by orders of magnitude with the addition of a thin SiO2 or SiOxNy (optimized in this work) layer at the interface were utilized. This thin layer also resulted in a significant improvement of the interface quality. Utilizing double dielectric layer with SiOxNy or SiO2, still thick (³ 1nm) as intermediate layer a dielectric constant value of 20 was obtained. Its important to mention that the SiOxNy and TiOx films, and consequently the double layer, were deposited at low temperatures.

Foram estudados filmes de oxinitreto de silício obtidos por PECVD à 320°C, a partir da mistura gasosa de N2O+SiH4+He, com diferentes valores de pressão e potência de deposição com o objetivo de produzir boa qualidade de interface deste material com o Si e de obter uma baixa densidade de carga efetiva visando a aplicação desses filmes em dispositivos semicondutores MOS. Os resultados mostraram que com uma pressão de deposição de 0,160 mbar e potências menores que 125 W/cm2 é possível obter um valor de densidade de estados de interface (Dit) de 4x1010 eV-1.cm-2, campo elétrico de ruptura (Ebd) de 13 MV/cm, valores comparáveis ao SiO2 térmico e uma densidade de carga efetiva (Nss) de 4x1011 cm-2. Segundo resultados experimentais esse valor de Nss é o mínimo possível que se pode atingir com a limpeza química utilizada em nosso laboratório. Pode-se dizer que estes são resultados bastante interessantes considerando que se trata de um material obtido por PECVD à baixa temperatura, porém viável para aplicação em dispositivos MOS. Iniciando os estudos com dielétricos de maiores valores de constante dielétrica optamos por estudar filmes de TiOx (k=40-100), obtidos por sputtering reativo, a partir da mistura gasosa de Ar+O2 e utilizando alvo de Ti. Foram fabricados capacitores MOS com estes filmes e obteve-se valores de constante dielétrica que variaram de 40-160. Porém esses materiais ainda apresentavam valores apreciáveis de corrente de fuga que foram minimizadas em ordens de grandeza quando utilizados dielétricos de dupla camada com SiO2 ou SiOxNy (otimizado neste trabalho) na interface, além de se observar uma melhora significativa da qualidade de interface. Utilizando dupla camada dielétrica com filmes de SiOxNy e SiO2, ainda espessos (³ 1nm) para camada intermediária, obteve-se uma constante dielétrica efetiva em torno de 20. Vale ressaltar que os dois filmes SiOxNy e TiOx, conseqüentemente a dupla camada, foram fabricados a baixas temperaturas. / Silicon oxynitride films obtained by the PECVD technique from N2O+SiH4+He gaseous mixtures, at 320°C, with different deposition pressure and RF power were studied intending to improve the interface quality with Si, decreasing the effective charge density and the interface state density in order to utilize them in MOS semiconductor devices. The results showed that with a deposition pressure of 0.160 mbar and a RF power density lower than 125 W/cm2 it is possible to obtain interface state density (Dit) values of 4x1010 eV-1.cm-2, Electrical Breakdown (Ebd) of 13 MV/cm, comparable with the obtained for thermally grown SiO2 , and an effective charge density (Nss) of 4x1011 cm-2. According with experimental results this Nss value is the minimum attainable with our chemical cleaning process. In this way it can be said that these results are very promising, considering that these materials were obtained by PECVD at low temperatures, but still viable for MOS devices application. In order to initiate studies with high dielectrics constant material, TiOx films (k= 40-180), obtained by reactive sputtering through the Ar+O2 gaseous mixture utilizing a Ti target, were chosen. MOS capacitors with these films were fabricated and dielectric constant values varying from 40 to 160 were obtained. However, until now, these materials have presented appreciable leakage current values, which were, minimize by orders of magnitude with the addition of a thin SiO2 or SiOxNy (optimized in this work) layer at the interface were utilized. This thin layer also resulted in a significant improvement of the interface quality. Utilizing double dielectric layer with SiOxNy or SiO2, still thick (³ 1nm) as intermediate layer a dielectric constant value of 20 was obtained. Its important to mention that the SiOxNy and TiOx films, and consequently the double layer, were deposited at low temperatures.

Made available in DSpace on 2014-12-17T14:06:56Z (GMT). No. of bitstreams: 1 DaniloCB_DISSERT.pdf: 3100682 bytes, checksum: ca6553081fbf48a3fd486b3f20d01cc2 (MD5) Previous issue date: 2011-06-09 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / Discs were grade II cp Ti oxynitride by plasma of Ar - N2 - O2 using different proportions of individual gases. These ratios were established from analysis of optical emission spectroscopy (OES) of plasma species. The proportions that resulted in species whose spectra showed an abrupt change of light intensity were chosen for this study. Nanohardness tests revealed that there was a correlation between the intensity of N2 + species with the hardness, because the treatments where they had a higher intensity, obtained a higher value nanohardness, although the crystalline phases have remained unchanged. With respect to topography, it was observed that in general, the surface roughness is related to the intensities of plasma species, because they may have different values depending on the behavior of the species. Images obtained by optical microscopy revealed a surface with grains of different colors to optical reflectance showed a peak of reflection in the red area. Measures the contact angle and surface tension showed hydrophilic properties and hydrophilic with little variation of polar and dispersive components of surface tension / Discos de tit?nio cp grau II foram oxinitretados por plasma de Ar - N2 - O2 usando diferentes propor??es de gases individuais. Essas propor??es foram estabelecidas a partir de an?lises de espectroscopia de emiss?o ?ptica (OES) das esp?cies do plasma. As propor??es que resultaram em espectros cujas esp?cies apresentaram varia??o abrupta de intensidade luminosa foram escolhidas para o presente trabalho. Os ensaios de nanodureza revelaram que houve uma rela??o entre a intensidade da esp?cie N2 + com a dureza, pois para os tratamentos onde estas apresentaram maior intensidade, obteve-se maior valor de nanodureza, embora as fases cristalinas tenham se mantido inalteradas. Com rela??o ?s topografias, observou-se que de um modo geral, a rugosidade superficial est? relacionada com as intensidades das esp?cies do plasma, pois estas podem apresentar valores diferentes dependendo do comportamento das esp?cies. Imagens obtidas por microscopia ?ptica revelaram uma superf?cie com gr?os de diferentes cores e a reflet?ncia ?ptica mostrou um pico m?ximo de reflex?o na regi?o do vermelho. As medidas de ?ngulo de contato e tens?o mostraram superf?cies com propriedades hidrof?licas e pouco hidrof?licas com varia??o das componentes polar e dispersiva da tens?o superficial

Neste trabalho, filmes amorfos de oxinitreto de silício (alfa-SiO IND.XN IND.Y:H) foram crescidos pelo processo de Plasma Enhanced Chemical Vapor Deposition (PECVD) a temperatura da 320ºC. No processo de deposição foi utilizada a mistura dos gases óxido nitroso (N IND.2O) e silano (SiH IND.4), variando-se a razão entre os seus fluxos (Re= N2O/SiH4) num intervalo de 0,25 Re 5,00. Foram obtidos filmes com diferentes composições químicas, sendo ricos em O (65 at.%) para Re 2,00 e ricos em Si (44 at. %) para Re 1,50. A técnica de Rutherford backscattering spectroscopy (RBS) foi utilizada para determinar a composição química dos filmes. Os dados de RBS mostram um decréscimo da quantidade de O, enquanto que as quantidades de Si e N aumentam com o decréscimo de Re. A morfologia dos filmes foi estudada por Small Angell X-ray scattering (SAXS), Transmissio Electron Microscopy (TEM) e medida de densidade pelo método de flutuação. Os dados de SAXS revelam a presença de centros espalhadores com raio médio que varia de 10 Ã a 100 Ã. Os resultados de TEM mostram a presença de aglomerados esféricos dispersos numa matriz de mesmas espécies atômicas. A concentração de poros nos filmes é inferior a 10% e diminui com o aumento do conteúdo de oxigênio. Tanto a estrutura de ordem local quanto as ligações químicas foram investigadas pelas técnicas de X-ray Absorption Near Edge Structure (XANES), Extented X-ray Absorption Fine Structure (EXAFS) e Fourier Transform Infrared Spectroscopy (FTIR). foi desenvolvido um potencial modelo de interação para simular a estrutura atômica do oxinitreto de silício amorfo e compará-la com os dados experimentais. As simulações computacionais foram realizadas utilizando o método de Monte Carlo (MC)-Metropolis. A análise estrutural das amostras ricas em O, tanto do ponto de vista experimental quanto teórico (obtidos por MC), mostram que a estrutura básica da rede é um tetraedro, onde o átomo central é o Si conectado por O e N. Os resultados experimentais das amostras ricas em si, apontam para a formação de agregados de Si, embebidos dentro de uma matriz de Si-O-N. Tratamentos térmicos a vácuo em temperaturas entre 550 e 1000 ºC promovem a efusão de hidrogênio e segregação de diferentes fases. / In this work, thin films of amorphous silicon oxynitride(alfa-SiOxNy:H) were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 320 ºC. In the deposition process a mixture of nitrous oxide (N2O) and silane (SiH4) was used, varying their flow ratio (Re= N2O/SiH4) in an interval of 0,25 Re 5,00. Films with different chemical composition were obtained, being O-rich (65 at.%) for Re 2,00 and Si-rich (44 at.%) for Re 1,50. The Rutherford backscattering spectroscopy (RBS) was used to determine the atomic content of the films. The RBS data showed a decrease of the oxygen content while the Si and N contents increase with the decrease of Re. The films morphology was studied by Small Angle X-ray scattering (SAXS), Transmission Electron Microscopy (TEM) and density measurements by the flotation method. The SAXS data revealed the presence of scattering centers with mean radius from 10 Ã to 100 Ã. The TEM data showed the presence of spherical clusters dispersed in a matrix of the same atomic species. The concentration of pores in the material is less than 10% and decreases with the increase of oxygen content. The local atomic structure and chemical bonds were investigated by X-ray Absorption Near Edge Structure (XANES), Extended X-ray Absorption Fine Structure (EXAFS) and Fourier Transform Infrared spectroscopy (FTIR). A model of interatomic potential was developed to simulate the atomic structure of the amorphous silicon oxynitride in order to be compared with the experimental data. The computer simulations were performed by the Monte Carlo (MC) Metropolis method. The structural analysis of the O-rich samples, obtained by both experimental and theoretical simulations (obtained by MC), showed that the basic structure of the network is tetrahedral, being Si the central atom connected by O and N. The experimental results of the Si-rich samples indicate the formation of Si aggregates, embedded in a Si-O-N matrix. Annealing in vacuum, at temperatures between 550 e 1000 ºC, promoted hydrogen effusion and segregation of different phases.

L’ouverture du marché de l’aéronautique civil aux matériaux composites à matrice céramique impose le développement de nouveaux procédés d’élaboration compatibles avec les cadences de production et les coûts de fabrication du secteur.À cette fin, des travaux expérimentaux ont été menés pour élaborer une matrice à base d’oxynitrure de silicium (Si2N2O) par procédé SHS, ou synthèse par combustion, à partir d’un mélange de poudres réactives.L’oxynitrure de silicium est une céramique thermostructurale prometteuse, caractérisée par de bonnes propriétés mécaniques, mais également par une résistance à l’oxydation supérieure à celle du carbure de silicium.Le procédé SHS est un procédé d’élaboration rapide dont le moteur est une réaction chimique suffisamment exothermique pour s’entretenir sans apport d’énergie extérieur.Les poudres sont préalablement broyées, mises en suspension, puis imprégnées dans une préforme fibreuse composée de fibres en carbure de silicium de dernière génération (Hi-Nicalon S). La réaction SHS est ensuite réalisée dans un réacteur spécialement conçu et dédié à cette étude.Une attention particulière a été portée sur l’optimisation des paramètres d’élaboration pour la synthèse d’une matrice à base Si2N2O. La synthèse s’effectue par la nitruration sous pression d’un mélange dans les bonnes proportions d’une poudre de silicium et d’une poudre de silice. La réaction chimique s’amorce à la température de fusion du silicium. La pression d’élaboration et la vitesse de montée en température constituent les paramètres principaux régissant la composition et la microstructure de la matrice. Ces paramètres ont fait l’objet d’une étude expérimentale approfondie pour parvenir à une matrice homogène, composée à plus de 90% d’oxynitrure de silicium et assurant un taux de porosité résiduelle du composite inférieur à 10%. Ce travail a été complété par le calcul des propriétés élastoplastiques de la matrice, par la caractérisation mécanique à l’échelle du composite, et par un test de vieillissement en température sous air humide. / The opening of the civil aviation market to ceramic matrix composite materials requires the development of new methods of producing compatible with the production rates and manufacturing costs of the sector.For this purpose, experimental work was conducted to develop a silicon oxynitride matrix (Si2N2O) by combustion synthesis (or SHS), from reactive powders. In recent years, Si2N2O has emerged as a promising new high-temperature ceramic material, characterized by not only good mechanical properties, but also by a higher oxidation resistance than silicon carbide. The underlying basis of SHS relies on the ability of highly exothermic reactions to be self-sustaining and, therefore, energetically efficient. Powders are first milled, dispersed and stabilized in aqueous media, and then impregnated into a fibrous preform composed of the latest generation of silicon carbide fibers (Hi-Nicalon S). SHS reaction is then carried out in a reactor specially designed and dedicated to this study. Particular attention was focused on the optimization of experimental parameters for the synthesis of a Si2N2O based matrix. Silicon metal in a mixture with silica powder was combusted under pressurized nitrogen gas into silicon oxynitride. The pressure and the temperature rise rate were the principal parameters for the composition and microstructure of the matrix. These parameters have been the subject of extensive experimental work to reach a homogeneous matrix with a very high formation rate for silicon oxynitride (more than 90wt%) and with a level of residual porosity lower than 10%. This work was completed by the calculation of the physical properties of the matrix, by the mechanical characterization of the composite material, and finally by a temperature aging test under moist air.

No description available.

The pursuit of sustainable and high-performance materials is of utmost significance in driving the progress of battery technologies. Solid-state technology represents a promising avenue for the development of batteries with improved sustainability and performance. In this context, the present study delves into the examination of composition and the substitution of oxygen with nitrogen within the 50Li2O-xSiO2-(50-x)P2O5 glass system, specifically as applied to Solid-State electrolytes. The objective is to evaluate the influence of these factors on the electrical properties of the glass and their potential implications for Solid-State battery technology. The glass matrix was obtained through the melt-quenching technique, followed by comprehensive characterization using electrochemical impedance spectroscopy. The influence of varying silica content on the conductivity of the glass was investigated. This led to the selection of the glass system with the highest conductivity for further experiments involving nitridation. Subsequent experiments on nitridation aimed to explore the impact of nitrogen incorporation on the conductivity of the glass. By systematically varying the nitrogen content at different temperatures, the study sought to elucidate the relationship between nitrogen content and the resulting increase in glass conductivity.    The study reveals a noteworthy finding regarding the impact of nitrogen content on the conductivity of the glass. Specifically, when the nitrogen content was increased, the conductivity increased. In the case of a similar glass composition in pellet form, the conductivity at room temperature increased from Log σ = -8,009 (for glass without nitrogen) to Log σ = -6,951 (for nitrided glass). Additionally, the introduction of nitrogen into the glass resulted in a decrease in activation energy, being reduced from 0,66 eV (for oxide glass) to 0,60 eV (for oxynitride glass). These results indicate a clear correlation between increased nitrogen content and enhanced electrical properties of the investigated glasses; although obtaining a homogeneous bulk glass after nitridation was not feasible. Therefore, the nitrided samples were pelletized and sintered under different thermal conditions to obtain characterizable samples. The findings suggest that nitrogen substitution could be a promising approach for enhancing the electrical properties of the glasses of the title system of composition. Further investigation is required to optimize the process and achieve homogeneous bulk oxynitride glass.

No description available.