The problem of spin manipulation via the spin-orbit interaction in nonmagnetic semiconductors in the absence of magnetic fields is investigated in this work. We begin with a review of the literature on spin dynamics in semiconductors, then discuss the semi-empirical k ⋅ p method of calculating direct-gap semiconductor properties, which we use to estimate material parameters significant for manipulation of spin even in the absence of a magnetic field. The total effective magnetic fields and precession lengths are calculated for a variety of quantum well orientations, and a class of devices are proposed that will allow for all-electric arbitrary manipulation of spin orientations. The strain- and momentum-dependent spin splitting coefficient C3 has been calculated using a fourteen band Kane k⋅p model for a variety of III-V semiconductors as well as ZnSe and CdSe. It is observed that the spin-splitting parameters C3 and γ, corresponding to the strain-induced spin-orbit interaction and Dresselhaus coefficient, are sensitive to the value of the inter-band spin-orbit coupling Δ− between the p valence and p̄ second conduction band in all cases. The value of Δ− has therefore been recalculated in these materials using a tight-binding model and modern experimental values of the valence and second conduction band spin-orbit splittings. The total effective magnetic field and precession length of spins in strained quantum wells in the (001), (110), and (111) planes are derived with consideration for all known effective magnetic fields except those due to interface effects in non- common-atom heterostructures (native inversion asymmetry). The orientation of the k-linear Dresselhaus field and the strain-dependent fields vary strongly with the growth axis of the quantum well. The precession length in the (110) and (001) cases can achieve infinite anisotropy, while the precession length of (111) quantum wells is always isotropic. We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zinc blende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (< 100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.

Prominent definitions and theories of 'Creativity' provide core data for themes that frame the Creative Process Assessment Matrix (CPAM). Its framework is based on Wallas' stages of the creative process and the P theory (Person, thinking Process, Press/Persuasion and Product). The CPAM's structure and content was derived from current, reliable and valid research. Issues relating to assessment procedures, as well as psychological factors (blockers and stimulators) gave rise to the Creative Assessment Test Questionnaire (CATQ#4), containing questions that document creative assessment prerequisites. Recognized creativity tests (Word-Association, Instances and TCT-DP) were evaluated to determine whether they successfully address and test for relevant creative process criteria. Results indicated that all three tests only addressed a minority of CPAM's 60-point criteria. CPAM offers understanding of the environmental impact and influence on creativity, and renders it measurable. Finally, the CPAM measures the setting, sensory stimulation and what postulates the initial spark of creativity. / Psychology of Education / M. Ed. (Psychology of Education)

Les propriétés physico-chimiques d'un nanocristal semi-conducteur sphérique, intermédiaires entre la molécule et le solide, dépendent de sa taille. Empilés ou dispersés, ces nanocristaux sont les briques architecturales de nouveaux matériaux fonctionnels aux propriétés ajustables, en particulier pour l’optoélectronique. Cette thèse s'inscrit dans le développement de ces nouveaux matériaux et présente avant tout une méthodologie pour la simulation du transport électronique dans un solide à nanocristaux en régime de faible couplage électronique appliquée à des nanocristaux de silicium dans une matrice de SiO2 pour les applications photovoltaïques. La cinétique du déplacement des porteurs est liée au taux de transfert tunnel (hopping) entre nanocristaux. Ces taux sont calculés dans le cadre de la théorie de Marcus et prennent en compte l'interaction électron-phonon dont l'effet du champ de polarisation dans la matrice ainsi que les interactions électrostatiques à courte et longue portée. Le calcul des états électroniques (électrons et trous) en théorie k.p associé à l'utilisation de la formule de Bardeen donne au code la capacité, par rapport à la littérature, de fournir des résultats (mobilité ou courant) en valeur absolue. Les résultats de mobilité ainsi obtenus pour des empilements cubiques idéaux viennent contredire les résultats de la littérature et incitent à considérer d'autres matériaux notamment en ce qui concerne la matrice pour obtenir de meilleurs performances. En outre, les résultats de simulation de dispositifs montrent l'impact considérable des électrodes sur les caractéristiques courant-tension. Aussi, un nouvel algorithme Monte-Carlo Cinétique accéléré a été adapté afin de pouvoir reproduire le désordre inhérent à la méthode de fabrication tout en maintenant un temps de simulation raisonnable. Ainsi l'impact du désordre en taille se révèle faible à température ambiante tandis que les chemins de percolation occultent la contribution des autres chemins de conduction. Des résultats de caractérisation comparés aux simulations tendent par ailleurs à indiquer que ces chemins peuvent concentrer les porteurs et exhiber un phénomène de blocage de coulomb. Enfin, la section efficace d'absorption est calculée théoriquement et permet d'obtenir le taux de génération sous illumination qui se révèle proche du silicium massif. Et une méthode en microscopie à sonde de Kelvin est décrite pour caractériser la durée de vie des porteurs c'est-à-dire le taux de recombinaison, les résultats ainsi obtenus étant cohérents avec d'autres techniques expérimentales. / The physicochemical properties of a spherical semiconductor nanocrystal, intermediate between the molecule and the solid depend on its size. Stacked or dispersed, these nanocrystals are building blocks of new functional materials with tunable properties, particularly appealing for optoelectronics. This thesis takes part in the development of these new materials. It mainly presents a methodology for the simulation of electronic transport in nanocrystal solids within the weak electronic coupling regime. It is applied to a material made of silicon nanocrystals embedded in silicon oxide and considered for photovoltaïc applications. The displacement kinetics of charge carriers is related to the tunneling transfer rate (hopping) between nanocrystals. These rates are calculated within the framework of Marcus theory and take into account the electron-phonon interactions, the effect of the bias field and the electron-electron interactions at short and long range. The calculation of electronic states (electrons and holes) in k.p theory associated with the use of Bardeen's formula provides, compared to previous works, results (mobility or current) in absolute terms. The mobility thus computed is far lower than the results of the literature and encourage to consider other materials. Furthermore, the device simulations show the significant impact of the electrodes on the current-voltage characteristics. Also, a new accelerated kinetic Monte-Carlo algorithm has been adapted in order to reproduce the disorder inherent in the manufacturing process while maintaining a reasonable simulation time. Thus the impact of the size disorder is poor at room temperature while the percolation paths shunt the contribution of other conduction paths. Characterization results compared to simulations tend to show that these paths concentrate carriers and exhibit Coulomb blockade phenomenon. Finally, the absorption cross section is calculated theoretically to obtain the generation rate under illumination. It is similar to the bulk silicon one. And a method employing a Kelvin probe microscope is described to characterize the carrier lifetime, namely the recombination rate. The results thus obtained are consistent with other experimental technics.

Prominent definitions and theories of 'Creativity' provide core data for themes that frame the Creative Process Assessment Matrix (CPAM). Its framework is based on Wallas' stages of the creative process and the P theory (Person, thinking Process, Press/Persuasion and Product). The CPAM's structure and content was derived from current, reliable and valid research. Issues relating to assessment procedures, as well as psychological factors (blockers and stimulators) gave rise to the Creative Assessment Test Questionnaire (CATQ#4), containing questions that document creative assessment prerequisites. Recognized creativity tests (Word-Association, Instances and TCT-DP) were evaluated to determine whether they successfully address and test for relevant creative process criteria. Results indicated that all three tests only addressed a minority of CPAM's 60-point criteria. CPAM offers understanding of the environmental impact and influence on creativity, and renders it measurable. Finally, the CPAM measures the setting, sensory stimulation and what postulates the initial spark of creativity. / Psychology of Education / M. Ed. (Psychology of Education)