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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Long and short term effects of X-rays on charge coupled devices

Tudge, Mark Vernon January 1996 (has links)
EEV buried channel charge coupled devices (BC CDs) with technological variations have been studied with respect to their response to 70kVp X-rays. Process variations considered are the conventional BCCD, scintillator coated BCCDs (Gadox(Eu) and Csl(Tl)) and the inversion mode device. The work was made necessary by the use of these CCDs for dental X-ray imaging. Effects investigated include changes in device operating voltages and dark current. The dark current buildup has been characterised in terms of a prompt component seen immediately following irradiation, and a time dependent component which occurs gradually. A major part of this work was the determination of the location and concentration of the energy states responsible for this dark current buildup. Also a novel aspect of the work was the derivation of an expression describing the time dependent component as a function of time and temperature. Effects associated with the bias dependence of the BCCD have also been considered, with particular regard to the effect of a negative substrate bias, and the theoretical explanation has been developed. The findings of this work have demonstrated the suitability of these devices for the commercial application of imaging X-rays for dentistry.
2

Análise dos processos de condução em transientes de fotocorrente de elétrons em monocristais de enxofre ortorrombico (s) / Analysis of the conduction processes in electronic photocurrent transients in suphfur orthorhombic monocrystals

Mergulhão, Sérgio 18 December 1987 (has links)
Medidas de tempo de vôo, em cinco diferentes temperaturas, foram realizadas em enxofre ortorrômbico para vários campos elétricos, tanto positivos como negativos. O trânsito dos portadores negativos foi mais extensivamente analisado e para baixas intensidades de luz, isto é, o caso do sinal fraco, os seguintes fatos foram verificados; a) não foi detectada dependência da mobilidade com o campo elétrico; b) a razão da corrente no tempo t para a corrente inicial mostrou não ser uma função universal do tempo, (isto é, independente do campo aplicado). Transporte dispersivo, discernível através da dependência da mobilidade com o campo elétrico, foi detectado pelo fato a. Contudo, para o transporte não dispersivo nós devemos esperar que a corrente normalizada leve a uma função universal do tempo, somente dependente do tempo de captura e, eventualmente, do tempo de soltura dos portadores, contrário ao que foi encontrado em b. A parte principal desta tese foi dedicada a testar nossos resultados com modelos existentes e o efeito esperado da falha das suposições nos resultados. Nós fomos então levados a um novo modelo, o qual explicou razoavelmente os resultados; a luz joga portadores, não só no canal normal de condução, mas também em um nível extra, confinado à região superficial, caracterizado por uma mobilidade dependente da profundidade. Soluções numéricas foram obtidas para confirmar a validade das soluções analíticas aproximadas obtidas. Um modelo aproximado foi desenvolvido para explicar o efeito do campo elétrico na extração de portadores da zona iluminada / Time off light measurements, in five different temperatures, were carried out in orthorhombic sulphur for various electric fields, both positive and negative. The transit of negative carriers were more thoroughly analyzed and at low light intensities, that is, the small signal case, the following facts were well established; a) no electric field dependence of the mobility was detected, b) the ratio of the current at a time t to the initial current was found not to be a universal function of the time (that is, independent of the applied field). Dispersive transport, discernible through its field dependent electron mobility, is ruled out by a. However, for non dispersive transport, we should expect the normalized current to lead to a universal function of time, only dependent of the trapping and, eventually, de-trapping times of the carriers, contrary to what was found in b. The main part of this thesis was devoted to test our results with the existing models and the expected effect of the breakdown of the simplified assumptions on the results. We were thus lead to a new model, which reasonable explained the results: light put carriers, not only in the normal conduction channel, but also in an extra level, confined to the surface region, characterized by a depth dependent mobility. Computer solution were carried out to confirm the validity of approximate analytic solutions thus obtained. An approximate model was also developed to explain the effect of the electronic field on the extraction of carriers from the illuminated zone
3

Charge transport in mix-conducting hetero-ionic junctions of polyacetylene ionomers

Lin, Fuding, 1975- 06 1900 (has links)
xvii, 159 p. : ill. A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / Experimental studies on mix-conducting hetero-ionic junctions of anionically (PA A ) and cationically (PA C ) functionalized polyacetylene ionomers, as well as each individual ionomer, in thin-film sandwich configurations are reported for the purpose of better understanding the interaction between ionic and electronic charge transports in mixed ionic-electronic conductor (MIEC) systems. The transport of ions in both individual ionomers as well as their hetero-ionic junction was investigated via small-amplitude AC impedance spectroscopy in the absence of significant interference from the electronic charge transport. Modeling of the impedance results reveal important information about the materials such as: ion conductivity, activation energy of ion conduction, ion hopping frequency, dielectric constant, interfacial capacitance, and estimates of effective ion density. Electrochemical injection of electronic charge carriers into PA A and PA C from gold electrodes was monitored to determine the applied potentials needed to drive hole and electron injection into each ionomer. It is found that for both ionomers, the onset voltages for unipolar and bipolar charge injection are similar, and holes can be injected at close to zero bias. The responses of the complete Au|PA A |PA C |Au hetero-ionic junction, as well as each constituent ionomer layer in Au|Ionomer|Au configuration, to various stepping biases were investigated through current-voltage and impedance measurements to study the origin of the asymmetric current-voltage response observed in the hetero-ionic junction. Analysis of the results reveal a working mechanism of a mix-conducting junction that is fundamentally different from that of a purely electronic pn junction. When illuminated with light, the Au|PA A |PA C |Au junction exhibits unidirectional photovoltage and photocurrent with the PA A side at higher potential, while the Au|PA A |Au and Au|PA C |Au samples exhibit symmetric photoresponses. The efficiency of photocurrent generation in the Au|PA A |PA C |Au junction was found to be strongly dependent on the direction of illumination and on the sample thickness. These observations can be explained by the difference in the mobility of holes and electrons and the existence of a built-in ionic space charge region at the PA A |PA C interface. A mechanism of photoresponse unique to MIEC junctions was proposed, and the magnitude of built-in potential was estimated. / Committee in charge: J David Cohen, Chairperson, Physics; Mark Lonergan, Advisor, Chemistry; Roger Haydock, Member, Physics; David Strom, Member, Physics; David Tyler, Outside Member, Chemistry
4

Dosimetria de processos de irradiacao gama com diodos comerciais de silicio / Gamma radiation processing dosimetry with commercial silicon diodes

FERREIRA, DANILO C. 09 October 2014 (has links)
Made available in DSpace on 2014-10-09T12:26:55Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:06:20Z (GMT). No. of bitstreams: 0 / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
5

Dosimetria de processos de irradiacao gama com diodos comerciais de silicio / Gamma radiation processing dosimetry with commercial silicon diodes

FERREIRA, DANILO C. 09 October 2014 (has links)
Made available in DSpace on 2014-10-09T12:26:55Z (GMT). No. of bitstreams: 0 / Made available in DSpace on 2014-10-09T14:06:20Z (GMT). No. of bitstreams: 0 / Este trabalho contempla o desenvolvimento de dosímetros baseados em diodos de Si para a dosimetria de radiação gama para doses desde 1 Gy até 100 Gy. Este intervalo de dose é freqüentemente utilizada em processos de irradiação de cristais, polímeros conjugados e também em vários estudos biológicos conduzidos no Centro de Tecnologia das Radiações (CTR) do IPEN-CNEN/SP. O dosímetro proposto foi construído a partir do diodo cormecial de Si SFH00206 (Siemens), operando em regime fotovoltaico, cujas características elétricas são adequadas para esta aplicação. As correntes geradas no dispositivo pela radiação gama do 60Co dos irradiadores tipo I e II foram registrada por um eletrômetro digital e armazenadas durante todo o tempo de exposição. Em todas as medidas realizadas verificou-se que os sinais de corrente registrados em função do tempo de exposição eram estáveis. Além disso, a fotocorrente do dispositivo mostrou-se linearmente dependente com a taxa de dose desde 6.1x10-2 Gy/min até 1.9x102 Gy/min. As curvas de calibração dos dosímetros, em termos da carga média registrada em função da dose absorvida, foram obtidas pela integração dos sinais de corrente em função do tempo de exposição. Os resultados evidenciaram uma resposta linear do dosímetro, com um coeficiente de correlação melhor que 0,998 para uma dose total absorvida de até 120 Gy. Finalmente, devido aos pequenos erros experimentais, 5% foi possível medir a dose de trânsito devida ao movimento das fontes radioativas de Cobalto-60 nos irradiadores utilizados neste trabalho. / Dissertacao (Mestrado) / IPEN/D / Instituto de Pesquisas Energeticas e Nucleares - IPEN-CNEN/SP
6

Análise dos processos de condução em transientes de fotocorrente de elétrons em monocristais de enxofre ortorrombico (s) / Analysis of the conduction processes in electronic photocurrent transients in suphfur orthorhombic monocrystals

Sérgio Mergulhão 18 December 1987 (has links)
Medidas de tempo de vôo, em cinco diferentes temperaturas, foram realizadas em enxofre ortorrômbico para vários campos elétricos, tanto positivos como negativos. O trânsito dos portadores negativos foi mais extensivamente analisado e para baixas intensidades de luz, isto é, o caso do sinal fraco, os seguintes fatos foram verificados; a) não foi detectada dependência da mobilidade com o campo elétrico; b) a razão da corrente no tempo t para a corrente inicial mostrou não ser uma função universal do tempo, (isto é, independente do campo aplicado). Transporte dispersivo, discernível através da dependência da mobilidade com o campo elétrico, foi detectado pelo fato a. Contudo, para o transporte não dispersivo nós devemos esperar que a corrente normalizada leve a uma função universal do tempo, somente dependente do tempo de captura e, eventualmente, do tempo de soltura dos portadores, contrário ao que foi encontrado em b. A parte principal desta tese foi dedicada a testar nossos resultados com modelos existentes e o efeito esperado da falha das suposições nos resultados. Nós fomos então levados a um novo modelo, o qual explicou razoavelmente os resultados; a luz joga portadores, não só no canal normal de condução, mas também em um nível extra, confinado à região superficial, caracterizado por uma mobilidade dependente da profundidade. Soluções numéricas foram obtidas para confirmar a validade das soluções analíticas aproximadas obtidas. Um modelo aproximado foi desenvolvido para explicar o efeito do campo elétrico na extração de portadores da zona iluminada / Time off light measurements, in five different temperatures, were carried out in orthorhombic sulphur for various electric fields, both positive and negative. The transit of negative carriers were more thoroughly analyzed and at low light intensities, that is, the small signal case, the following facts were well established; a) no electric field dependence of the mobility was detected, b) the ratio of the current at a time t to the initial current was found not to be a universal function of the time (that is, independent of the applied field). Dispersive transport, discernible through its field dependent electron mobility, is ruled out by a. However, for non dispersive transport, we should expect the normalized current to lead to a universal function of time, only dependent of the trapping and, eventually, de-trapping times of the carriers, contrary to what was found in b. The main part of this thesis was devoted to test our results with the existing models and the expected effect of the breakdown of the simplified assumptions on the results. We were thus lead to a new model, which reasonable explained the results: light put carriers, not only in the normal conduction channel, but also in an extra level, confined to the surface region, characterized by a depth dependent mobility. Computer solution were carried out to confirm the validity of approximate analytic solutions thus obtained. An approximate model was also developed to explain the effect of the electronic field on the extraction of carriers from the illuminated zone

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