Broad band light emission ranging from the ultraviolet (UV) to the near infrared (NIR) has been observed from silicon nanoparticles fabricated using low energy (30-45 keV) metal and non-metal ion implantation with a fluence of 5*1015 ions/cm2 in crystalline Si(100). It is found from a systematic study of the annealing carried out at certain temperatures that the spectral characteristics remains unchanged except for the enhancement of light emission intensity due to annealing. The annealing results in nucleation of metal nanoclusters in the vicinity of Si nanoparticles which enhances the emission intensity. Structural and optical characterization demonstrate that the emission originates from both highly localized defect bound excitons at the Si/Sio2 interface, as well as surface and interface traps associated with the increased surface area of the Si nanocrystals. The emission in the UV is due to interband transitions from localized excitonic states at the interface of Si/SiO2 or from the surface of Si nanocrystals. The radiative efficiency of the UV emission from the Si nanoparticles can be modified by the localized surface plasmon (LSP) interaction induced by the nucleation of silver nanoparticles with controlled annealing of the samples. The UV emission from Si nanoclusters are coupled resonantly to the LSP modes. The non-resonant emission can be enhanced by electrostatic-image charge effects. The emission in the UV (~3.3 eV) region can also be significantly enhanced by electrostatic image charge effects induced by Au nanoparticles. The UV emission from Si nanoclusters, in this case, can be coupled without LSP resonance. The recombination of carriers in Si bound excitons is mediated by transverse optical phonons due to the polarization of the surface bound exciton complex. The low energy side of emission spectrum at low temperature is dominated by 1st and 2nd order phonon replicas. Broad band emission ranging from the UV to the NIR wavelength range can be obtained from Ag implanted onto a single silicon substrate.

Doctor of Philosophy (PhD) / In this thesis we consider several novel photonic crystal structures that derive their properties from optical resonances and mode coupling effects. We present first a theoretical analysis of a new class of photonic crystal device based on the combination of mode coupling and Fabry-Perot resonance effects. These structures exhibit characteristics that make them promising candidates as compact, integrated photonic components. The second aspect we consider is highly-efficient coupling into uniform photonic crystals. The results of this study identify inherent advantages of rod-type photonic crystals over the more common hole-type structures for in-band applications. The third contribution of this thesis is the demonstration of an efficient and powerful theoretical approach to studying photonic crystal devices. Throughout this work, we combine general numerical methods with simple physical models to develop physical insight into the behaviour of photonic crystal structures. We show that this can lead to novel device geometries with highly attractive properties.

In the thesis, we fabricated the quantum dots lasers of 2D photonic crystal microcavity structures by E-beam lithography. The Al0.5Ga0.5As sacrificing layer beneath the Dwells structure is used for the purpose of suspending the active layer by air. Therefore, it has a high refractive index contrast in vertical direction to confine energy. Finally, we could fabricate a low threshold current photonic crystal laser. We can judge the epitaxy quality by the Microdisk (MD) process before the photonic crystal device process. For the 2D photonic crystal microcavity, we design different kinds of window to support the photonic crystal membrane cavity. We use dry and wet etching technique and metal mask to fabricate MD and photonic crystal membrane cavity. We use £g-PL to measure MD cavity resonant mode for the device of diameter 3£gm at room temperature. In addition, we design three kinds of defects (L3, H2, H3) of photonic crystal membrane structures using the sample C488. We measure resonant mode with H3 structure. The H3 structure measured resonant wavelength 1.26£gm, with Q =503.

A 2-D photonic crystal cavity device is investigated in this thesis. A simplified flexible local approximation method (FLAME) is used to analyze the electromagnetic characteristics of the cavity. / FLAME is a computational technique that is well suited to problems involving a large number of repeated structures. It has been used before to analyze photonic crystal cavities. In this thesis, an improved FLAME is developed, leading to a standard eigenproblem, which allows the use of sparse-matrix solution methods. Consequently, much larger problems can be solved. In addition, a graded perfectly matched layer (PML) is applied to absorb more effectively the out-going waves. / The new method is applied to cavities based on NxN arrays of rods, from N=3 to 9. Good accuracy is achieved compared with the finite-element method (FEM), with an error of less than 0.001% in the resonant frequency for a density of 42.6 nodes per wavelength (when N=5), which shows better consistency than the previous FLAME. Further, the new method converges more quickly than the FEM with linear elements, as the node density is increased, though it is less accurate than the FEM with quadratic elements.

Doctor of Philosophy (PhD) / In this thesis we consider several novel photonic crystal structures that derive their properties from optical resonances and mode coupling effects. We present first a theoretical analysis of a new class of photonic crystal device based on the combination of mode coupling and Fabry-Perot resonance effects. These structures exhibit characteristics that make them promising candidates as compact, integrated photonic components. The second aspect we consider is highly-efficient coupling into uniform photonic crystals. The results of this study identify inherent advantages of rod-type photonic crystals over the more common hole-type structures for in-band applications. The third contribution of this thesis is the demonstration of an efficient and powerful theoretical approach to studying photonic crystal devices. Throughout this work, we combine general numerical methods with simple physical models to develop physical insight into the behaviour of photonic crystal structures. We show that this can lead to novel device geometries with highly attractive properties.

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Klein, Benjamin; Committee Member: Alavi, Kambiz; Committee Member: Allen, Janet K.; Committee Member: Buck, John; Committee Member: Gaylord, Tom; Committee Member: Yoder, Douglas.

No description available.

The American Institute for Manufacturing Integrated Photonics (AIM Photonics) is focused on developing an end- to- end integrated photonics ecosystem in the U.S., including domestic foundry access, integrated design tools, automated packaging, assembly and test, and workforce development. This paper describes how the institute has been structured to achieve these goals, with an emphasis on advancing the integrated photonics ecosystem. Additionally, it briefly highlights several of the technological development targets that have been identified to provide enabling advances in the manufacture and application of integrated photonics.

This thesis presents designs and fabrication algorithms for 3D photonic band gap (PBG) material synthesis and embedded optical waveguide networks. These designs are suitable for large scale micro-fabrication using optical lithography methods. The first of these is a criss-crossing pore structure based on fabrication by direct photo-electrochemical etching in single-crystal silicon. We demonstrate that a modulation of the pore radius between pore crossing points leads to a moderately large PBG. We delineate a variety of PBG architectures amenable to fabrication by holographic lithography. In this technique, an optical interference pattern exposes a photo-sensitive material, leading to a template structure in the photoresist whose dielectric-air interface corresponds to an iso-intensity surface in the exposing interference pattern. We demonstrate PBG architectures obtainable from the interference patterns from four independent beams. The PBG materials may be fabricated by replicating the developed photoresist with established silicon replication methods. We identify optical beam configurations that optimize the intensity contrast in the photoresist. We describe the invention of a new approach to holographic lithography of PBG materials using the diffraction of light through a three-layer optical phase mask (OPM). We show how the diffraction-interference pattern resulting from single beam illumination of our OPM closely resembles a diamondlike architecture for suitable designs of the phase mask. It is suggested that OPML may both simplify and supercede all previous optical lithography approaches to PBG material synthesis. Finally, we demonstrate theoretically the creation of three-dimensional optical waveguide networks in holographically defined PBG materials. This requires the combination of direct laser writing (DLW) of lines of defects within the holographically-defined photoresist and the replication of the microchip template with a high refractive index semiconductor such as silicon. We demonstrate broad-band (100-200~nm), single-mode waveguiding in air, based on the light localization mechanism of the PBG as well as sharp waveguide bends in three-dimensions with minimal backscattering. This provides a basis for broadband 3D integrated optics in holographically defined optical microchips.

This thesis presents designs and fabrication algorithms for 3D photonic band gap (PBG) material synthesis and embedded optical waveguide networks. These designs are suitable for large scale micro-fabrication using optical lithography methods. The first of these is a criss-crossing pore structure based on fabrication by direct photo-electrochemical etching in single-crystal silicon. We demonstrate that a modulation of the pore radius between pore crossing points leads to a moderately large PBG. We delineate a variety of PBG architectures amenable to fabrication by holographic lithography. In this technique, an optical interference pattern exposes a photo-sensitive material, leading to a template structure in the photoresist whose dielectric-air interface corresponds to an iso-intensity surface in the exposing interference pattern. We demonstrate PBG architectures obtainable from the interference patterns from four independent beams. The PBG materials may be fabricated by replicating the developed photoresist with established silicon replication methods. We identify optical beam configurations that optimize the intensity contrast in the photoresist. We describe the invention of a new approach to holographic lithography of PBG materials using the diffraction of light through a three-layer optical phase mask (OPM). We show how the diffraction-interference pattern resulting from single beam illumination of our OPM closely resembles a diamondlike architecture for suitable designs of the phase mask. It is suggested that OPML may both simplify and supercede all previous optical lithography approaches to PBG material synthesis. Finally, we demonstrate theoretically the creation of three-dimensional optical waveguide networks in holographically defined PBG materials. This requires the combination of direct laser writing (DLW) of lines of defects within the holographically-defined photoresist and the replication of the microchip template with a high refractive index semiconductor such as silicon. We demonstrate broad-band (100-200~nm), single-mode waveguiding in air, based on the light localization mechanism of the PBG as well as sharp waveguide bends in three-dimensions with minimal backscattering. This provides a basis for broadband 3D integrated optics in holographically defined optical microchips.