Doctor of Philosophy (PhD) / Photonic crystals are optical structures that contain a periodic modulation of their refractive index, allowing them to control light in recent years of an unprecedented capacity. Photonic crystals may take on a variety of configurations, in particular the photonic crystal cavity, which may “hold” light in small volumes comparable to the light’s wavelength. This capability to spatially confine light opens up countless possibilities to explore for research in telecommunications, quantum electrodynamics experiments and high-resolution sensor applications. However, the vast functionality potentially made available by photonic crystal cavities is limited due to the difficulty in redefining photonic crystal components once they are formed in their (typically) solid material. The work presented in this thesis investigates several approaches to overcome this issue by reconfiguring photonic crystal cavities.

Thesis (Ph.D.)--University of Nebraska-Lincoln, 2009. / Title from title screen (site viewed September 08, 2009). PDF text: xiii, 129 p. : ill. (some col.) ; 36 Mb. UMI publication number: AAT 3352411. Includes bibliographical references. Also available in microfilm and microfiche formats.

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Klein, Benjamin; Committee Member: Citrin, David; Committee Member: Ferguson, Ian.

Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2008. / Includes bibliographical references (leaves 92-94). Also available in electronic version.

Thesis (Ph. D.)--University of Texas at Austin, 2007. / Vita. Includes bibliographical references.

The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into SiO₂ etch mask by reactive ion etching, pattern transfer through AlGaInP/GaInP layer by inductively coupled plasma (ICP) etching and a selective undercut wet etch to create the freestanding membrane. The chlorine-based ICP etching conditions are optimized to achieve a vertical sidewall. The photonic crystal structures with periods of a=160-480nm are produced. / Singapore-MIT Alliance (SMA)

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Photonic signal processing has been considered a promising solution to overcome the inherent bandwidth limitations of its electronic counterparts. Over the last few years, an impressive range of photonic integrated signal processors have been proposed with the technological advances of III-V and silicon photonics, but the signal processors offer limited tunability or reconfigurability, a feature highly needed for the implementation of programmable photonic signal processors. In this thesis, tunable and reconfigurable photonic signal processors are studied. Specifically, a photonic signal processor based on the III-V material system having a single ring resonator structure for temporal integration and Hilbert transformation with a tunable fractional order and tunable operation wavelength is proposed and experimentally demonstrated. The temporal integrator has an integration time of 6331 ps, which is an order of magnitude longer than that provided by the previously reported photonic integrators. The processor can also provide a continuously tunable fractional order and a tunable operation wavelength. To enable general-purpose signal processing, a reconfigurable photonic signal processor based on the III-V material system having a three-coupled ring resonator structure is proposed and experimentally demonstrated. The reconfigurability of the processor is achieved by forward or reverse biasing the semiconductor optical amplifiers (SOAs) in the ring resonators, to change the optical geometry of the processor which allows the processor to perform different photonic signal processing functions including temporal integration, temporal differentiation, and Hilbert transformation. The integration time of the signal processor is measured to be 10.9 ns, which is largely improved compared with the single ring resonator structure due to a higher Q-factor. In addition, 1st, 2nd, and 3rd of temporal integration operations are demonstrated, as well as a continuously tunable order for differentiation and Hilbert transformation. The tuning range of the operation wavelength is 0.22 nm for the processor to perform the three functions. Compared with the III-V material system, the CMOS compatible SOI material system is more cost effective, and it offers a smaller footprint due to the strong refractive index contrast between silicon and silica. Active components such as phase modulators (PMs) can also be implemented. In this thesis, two photonic temporal differentiators having an interferometer structure to achieve active and passive fractional order tuning are proposed and experimentally demonstrated. For both the active and passive temporal differentiators, the fractional order can be tuned from 0 to 1. For the active temporal differentiator, the tuning range of the operation wavelength is 0.74 nm. The use of the actively tunable temporal differentiator to perform high speed coding with a data rate of 16 Gbps is also experimentally demonstrated.

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The topic of this dissertation is photonic crystal nanocavities for semiconductor cavity quantum electrodynamics. For the purposes of this study, these nanocavities may be one dimensional (1D) or two dimensional (2D) in design. The 2D devices are active and contain embedded InAs quantum dots (QDs), whereas the 1D devices are passive and contain no active emitters. The 2D photonic crystal nanocavities are fabricated in a slab of GaAs with a single layer of InAs QDs embedded in the slab. When a cavity mode substantially overlaps the QD ensemble, the dots affect the linewidths of the observed modes, leading to broadening of the linewidth at low excitation powers due to absorption and narrowing of the linewidths at high excitation powers due to gain when the QD ensemble absorption is saturated. We observe lasing from a few QDs in such a nanocavity. A technique is discussed with allows us to tune the resonance wavelength of a nanocavity by condensation of an inert gas onto the sample, which is held at cryogenic temperatures. The structural quality at the interfaces of epitaxially grown semiconductor heterostructures is investigated, and a growth instability is discovered which leads to roughness on the bottom of the GaAs slabs. Adjustment of MBE growth parameters leads to the elimination of this roughness, and the result is higher nanocavity quality factors. A number of methods for optimizing the fabrication of nanocavities is presented, which lead to higher quality factors. It is shown that some fundamental limiting factor, not yet fully understood, is preventing high quality factors at wavelengths shorter than 950 nm. Silicon 1D devices without active emitters are investigated by means of a tapered microfiber loop, and high quality factors are observed. This measurement technique is compared to a cross-polarized resonant scattering method. The quality factors observed in the silicon nanocavities are higher than those observed in GaAs, consistent with our observation that quality factors are in general higher at longer wavelengths.