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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
581

Fabrication, caractérisation et simulation de cellules solaires multi-junction III-V sur silicium / Fabrication, characterization and simulation of III-V on Si multi-junction solar cells

Veinberg vidal, Elias 15 November 2018 (has links)
Des rendements record à plus de 26% ont récemment été démontrés avec des cellules solaires en Si, approchant la limite théorique de 30% pour une seule jonction. Les cellules solaires à multi-jonctions (MJSC) fabriquées à base de matériaux III-V peuvent dépasser cette limite: des rendements supérieurs à 45% ont été reportés pour une cellule à 5 jonctions sous un soleil et pour une cellule à 4 jonctions sous lumière concentrée. Cependant, pour des applications terrestres, le coût élevé de ces technologies impose l’utilisation d’une haute concentration, ce qui augmente la complexité du système.Une solution intermédiaire consiste à fabriquer des cellules solaires III-V à haut rendement sur des substrats Si, moins coûteux que les substrats III-V ou Ge utilisés dans les MJSC classiques. Des rendements supérieurs à 33% ont déjà été démontrés pour des MJSC fabriquées par collage direct. Ceci, combiné aux progrès récents dans la réutilisation des substrats III-V, présage un avenir prometteur pour les cellules solaires tandem III-V sur Si, ce qui pourrait mener à la prochaine génération de systèmes photovoltaïques à haut rendement et faible coût.Dans ce travail de thèse, des cellules solaires tandem AlGaAs//Si à 2 jonctions (2J) et GaInP/AlGaAs//Si à 3 jonctions (3J) ont été fabriquées par collage direct, ce qui a donné lieu à une configuration à 2 terminaux (2T).Différentes techniques de collage ont été étudiées, notamment une approche innovante présentant un potentiel d'industrialisation prometteur pour l’intégration des matériaux III-V sur Si. Les propriétés électriques de l'interface de collage GaAs//Si ont été analysées à l'aide de dispositifs de test dédiés conçus au CEA, permettant d'évaluer la résistance d'interface et le mécanisme de conduction.Des caractérisations et simulations expérimentales ont été effectuées afin d'optimiser le design et le processus de fabrication, conduisant à des rendements record. Pour la sous-cellule supérieure en AlGaAs de la 2J, cela comprend l'utilisation d'une fenêtre en AlInP avec un émetteur en GaInP, formant une hétérojonction n-GaInP/p-AlGaAs, qui améliore les performances pour les faibles longueurs d'onde. De plus, la réduction de l'épaisseur de la couche de collage en GaAs et l'utilisation d'une jonction tunnel en AlGaAs, avec bande interdite plus large, augmentent la transparence et donc le photocourant de la sous-cellule inférieure.Pour la sous-cellule inférieure en Si, les simulations ont permis d'identifier les facteurs clés qui limitent les performances, la durée de vie étant la caractéristique la plus critique dans les cellules Si épaisses utilisées. Dans le cas des interfaces III-V//Si, un émetteur fortement dopé est essentiel pour minimiser la recombinaison de surface et donc augmenter la tension en circuit ouvert. La passivation de la surface arrière est également importante, notamment pour augmenter la réponse dans l’infrarouge. Différents processus de diffusion et d'implantation ont été étudiés pour former l'émetteur. Les processus d'implantation ont montré moins de dégradation de la durée de vie et des surfaces moins rugueux, permettant ainsi le collage sans planarisation chimico-mécanique et donc des niveaux de dopage plus élevés en surface.Finalement, afin d’évaluer correctement le rendement de conversion de ces cellules tandem III-V sur Si, une méthode de caractérisation courant-tension rapide et peu coûteuse, adaptée aux MJSC sous faible concentration a été développée. Cette méthode ne nécessite pas de cellules isotypes parfaitement identiques, à la place, des cellules Si à simple jonction avec filtres optiques sont utilisées. Une efficacité de 23,7% sous 10 soleils a été démontrée de cette manière pour la cellule AlGaAs//Si, qui est le rendement le plus élevé signalé à ce jour pour une cellule tandem à base de Si avec 2J et 2T. / Si solar cells with record efficiencies over 26% have been recently demonstrated, approaching the Si single-junction limit of 30%. Multi-junction solar cells (MJSC) based on III-V materials can overcome this limit: efficiencies over 45% have been reported for a 5-junction under 1 sun and for a 4-junction under a concentrated illumination of 300 suns. Due to their elevated cost, these cells could be used in terrestrial applications only if operated under very high sunlight concentration for commercial terrestrial applications, which in turn increases the module and system complexity.An intermediate solution consists in fabricating high efficiency III-V solar cells on Si substrates, which are less expensive than the III-V or Ge substrates used in conventional MJSC. Mechanical-stacked and wafer-bonded solar cells, which avoid the unresolved issues of III-V on Si epitaxy, have already demonstrated efficiencies over 33%. This, combined with the recent advancements in the field of substrate reuse, predict a promising future for III-V on Si tandem solar cells, which could lead the next generation of high-efficiency and low-cost photovoltaics.In this PhD work, 2-junction (2J) AlGaAs//Si and 3-junction (3J) GaInP/AlGaAs//Si tandem solar cells were fabricated. The Si bottom subcell and the III-V top subcell(s) were joined together by wafer bonding, resulting in a 2-terminal (2T) III-V//Si solar cell configuration.Different wafer bonding techniques were studied, including an innovative bonding approach showing promising industrialization potential and thus, opening a new path for III-V on Si processing. The GaAs//Si bonding interface electrical properties were analyzed using dedicated test devices originally conceived at CEA, allowing to evaluate the interface resistance and the conduction mechanism.Experimental characterizations and simulations were performed in order to optimize the design and fabrication process, leading to record efficiencies. For the AlGaAs top subcell of the 2J, this includes the use of an AlInP window together with a GaInP emitter, forming an n-GaInP/p-AlGaAs heterojunction, which improved the short wavelength performance. In addition, the reduction of the GaAs bonding layer thickness and the use of a higher bandgap AlGaAs tunnel junction resulted in a higher transparency and a bottom subcell photocurrent improvement.For the Si bottom subcell, simulations allowed to identify the key factors that limit the performance, being the bulk lifetime the most critical characteristic in the thick Si cells used. In the case of III-V//Si interfaces, a highly doped emitter is crucial to minimize the surface recombination and maximize the open-circuit voltage, outweighing the drop in short-circuit current due to lifetime degradation. Back surface passivation is also important, specially to increase the infrared response. Different diffusion and implantation processes for the emitter formation were studied. Implantation processes showed less bulk lifetime degradation and smoother surfaces, thereby allowing bonding without chemical-mechanical planarization and thus higher doping levels at the surface.Finally, in order to correctly assess the efficiency of these III-V on Si tandem cells, a fast and low-cost current-voltage characterization method adapted for MJSC under low concentration was developed. This method does not require perfectly matched component cells and instead, Si single-junction cells with optical filters are used as pseudo-isotypes. An efficiency of 23.7% under 10 suns was demonstrated this way for the AlGaAs//Si cell, which is the highest efficiency reported to date for a 2J 2T Si-based tandem cell.
582

π-Extended and Curved Antiaromatic Polycyclic Hydrocarbons

Liu, Junzhi, Ma, Ji, Zhang, Ke, Ravat, Prince, Machata, Peter, Avdoshenko, Stanislav, Hennersdorf, Felix, Komber, Hartmut, Pisula, Wojciech, Weigand, Jan J., Popov, Alexey A., Berger, Reinhard, Müllen, Klaus, Feng, Xinliang 06 January 2020 (has links)
Synthesis of antiaromatic polycyclic hydrocarbons (PHs) is challenging because the high energy of their highest occupied molecular orbital and low energy of their lowest unoccupied molecular orbital cause them to be reactive and unstable. In this work, two large antiaromatic acene analogues, namely, cyclopenta[pqr]indeno[2,1,7-ijk]tetraphene (CIT, 1a) and cyclopenta[pqr]indeno[7,1,2-cde]picene (CIP, 1b), as well as a curved antiaromatic molecule with 48 πelectrons, dibenzo[a,c]diindeno[7,1,2-fgh:7′,1′,2′-mno]-phenanthro[9,10-k]tetraphene (DPT, 1c), are synthesized on the basis of the corona of indeno[1,2-b]fluorene. These three antiaromatic PHs possess a narrow energy gap down to 1.55 eV and exhibit high kinetic stability under ambient conditions. Moreover, these compounds display reversible electron transfer processes in both the cathodic and anodic regimes. Their cation and anion radicals are characterized by in situ vis−NIR absorption and electron paramagnetic resonance spectroelectrochemistry. The X-ray crystallographic analysis confirms that while CIP and CIT manifest planar structures, DPT shows a curved πconjugated carbon skeleton. The synthetic strategy starting from ortho-substituted benzene units to construct five-membered rings in this work provides a unique entry to novel pentagon-embedding or curved antiaromatic polycyclic hydrocarbons. In addition, besides the detailed chemical and physical investigations, microscale single-crystal fiber field-effect transistors were also fabricated.
583

Regionalwirtschaftliche Effekte aus dem Betrieb von Photovoltaikanlagen: Methodenpapier zur Wertschöpfungsanalyse

Kolb, Katharina, Springsklee, Maren, Hesse, Mario 20 December 2021 (has links)
Der voranschreitende Ausbau von erneuerbaren Energien (EE) Technologien bringt eine zunehmend dezentralisierte Energieproduktion mit sich. Hieraus ergeben sich unterschiedliche regionalwirtschaftliche Effekte und Wertschöpfungspotenziale für den ländlichen und den urbanen Raum. Ziel dieser Studie ist die Quantifizierung der Wertschöpfung im Kontext von Solarstromerzeugung durch Photovoltaik (PV)-Anlagen. Hierzu wird eine allgemeine Methodik zur Bestimmung der direkten, indirekten und induzierten Wertschöpfungseffekte erstellt, die aktuelle Entwicklungen berücksichtigt und zunächst auf das Praxisbeispiel der Stadt Leipzig im Jahr 2019 angewandt. Die Ergebnisse können Kommunen bei der Frage unterstützen, ob und inwiefern es sich im Hinblick auf veränderte regulatorische Rahmenbedingungen auch in Zukunft lohnt, den PV-Ausbau vor Ort voranzutreiben und geeignete Ansatzpunkte hierfür zu identifizieren. Im Ergebnis zeigt sich, dass die Wertschöpfungseffekte für verschiedene Anlagengrößen variieren. Während kleinere Anlagen eine höhere Wertschöpfung pro Kilowattpeak (kWp) generieren, zeigen große Dach- und Freiflächenanlagen durch ihre Skalierung einen größeren Effekt auf die Wertschöpfung in absoluten Werten. Gleichzeitig fließt ein erheblicher Anteil der generierten Wertschöpfung aus der Standortkommune ab. Insgesamt beziffert sich die kommunal verbleibende Wertschöpfung aus dem PV-Betrieb in der Stadt Leipzig 2019 auf rund 4,5 Mio. Euro.
584

Inovace systému pro detekci defektů solárních článků pomocí elektroluminiscence / Inovation of system for electroluminiscence defect detection of solar cells

Lepík, Pavel January 2017 (has links)
This master thesis analyses the existing methods both practically and theoretically used to detect defected surface area in solar cells. Various methods were used but by using an upgraded CMOS camera without IR filter to implement the electroluminescence method, this has proven to have a very crucial impact on the results. Given the overall results and the acquired information, a procedure with a simple parameter can be setup to carry out the measurements. In addition to this a catalog was formed showing the defects occurring in mono and polycrystalline solar cells.
585

Studium degradace perovskitových solárních článků / Study of perovskite solar cells degradation

Hrbková, Silvie January 2018 (has links)
This thesis studies the degradation of perovskite photovoltaic cells placed in atmospheres of different moisture. Samples with inverse structure: ITO/ PEDOT:PSS/ CH3NH3PbI3–XClX / PC70BM/ Ca/ Al were prepared. Electrical characteristics were measured for 2 months and similar degradation trend was observed for all the samples. Perovskite cell efficiency PCE decreased to 20 % of the initial value in t80= 46±3 days in laboratory, t80=23±1$ days in nitrogen atmosphere and t80=25,7±0,6 dní days in dry atmosphere. For the initial 27 days of the experiment, a faster degradation linked with the decrease of ISC, FF and VOC was observed. After this period, the value of FF has stabilised at 0,777±0,009 % and the value of VOC at 0,70±0,02 % of their original value (in the laboratory atmosphere). Additional fall of PCE resulted only from the decrease of ISC and was slower than in the initial period. From the results acquired, it has emerged that during the experiment, the cell encapsulation provided a sufficient barrier against outer moisture. Residual moisture present in the sctructure, was labeled as the source of the degradation. The moisture is believed to enter with the hygroscopic material PEDOT:PSS during the samples preparation procedure. During the degradation, absorption measurements of photovoltaic cells were executed. The absorption spectra didn't change. That indicates, that the decrease of ISC is not caused by the reduction of light absorption. The thesis also studied the degradation of perovskite solar cells under illumination. The samples were exposed to UV radiation for 55,5 hours. The PCE time of decrease to 20 % of the initial value was t80 = 6±2 days. It was revealed, that UV radiation significantly accelerates the decrease of ISC.
586

Energetický audit / Energy audit

Miesler, Zdeněk January 2020 (has links)
My diploma thesis is focused on processing of an energy audit of an apartment buil-ding in accordance with the Decree 480/2012 Coll. as amended. In the theoretical part I deal with the revitalization of residential and prefabricated houses both in classical ways and with modern technologies. In the practical part is processed analysis of ener-gy consumption of the apartment building in Kyjov in the initial state. In the last part is the energy audit of the apartment building, where are suggested precautions and then proposed the option for implementation.
587

Energeticky úsporný administrativní objekt s posilovnou a wellness Kostka / Energy efficient office building with gym and wellness Kostka

Kotas, Marek Unknown Date (has links)
The master thesis describes a complete design of an office building, including its technical equipment. The building's technical equipment contains HVAC, lighting, DHW and photovoltaics design, water demand. The building has two floors. It contains offices, a bistro with a lounge, a wellness area and two gyms, a children's playground and facilities. This master thesis is divided into three parts. Firstly, the thesis presents building documentation with an engineering and an accompanying report. Secondly, the thesis introduces the design of the building's technical equipment and engineering reports. Lastly, the results of a conducted experiment are presented. In this experiment, a system for the optimization of blind tilt angle is proposed.
588

CdTe Back Contact Engineering via Nanomaterials, Chemical Etching, Doping, and Surface Passivation

Bastola, Ebin January 2020 (has links)
No description available.
589

Příprava a studium optoelektrických vlastností tenkých vrstev pro organickou fotoniku / Deposition and study of optoelectronic properties of thin films for organic photonics

Nagyová, Veronika January 2013 (has links)
This diploma thesis concentrates on the properties characterization of new organic materials for solar cells. In the theoretical part, there is a solar cells themed literature search, there is described a mechanism of conversion of solar energy, factors influencing photovoltaic conversion efficiency and materials using for preparation of organic solar cells. The practical part includes the preparation of solar cells and characterization of optical and electrical properties of the studied materials in thin layers and solutions. Used materials were conjugated polymers and derivatives of fullerenes.
590

Automatické měřicí pracoviště U-I charakteristik solárních článků / V-I characteristic of solar cells

Kaderka, Tomasz January 2011 (has links)
The theoretical part is to outline the possibilities of solar energy conversion, learn about the issues solar cells and describe the history of photovoltaics and photovoltaic energy conversion. Then describe principle of the measurement VA characteristics of photovoltaic cells. This issue is not as easy as it seems at first sight, because the solar cell isn’t a linear component, which is very easy to measure. Analysis of VA characteristic of photovoltaic cells affects parameters such as: light intensity, temperature, serial and parallel resistance, the slope of the light source, and more. The practical part deals with creating a workplace for automatic measurement of VA characteristics of photovoltaic cells in the LabVIEW. Challenge is to create a functional program, which automatically measures the VA characteristics not only in the lighted cells, but also in the shaded cell (diode mode). The program calculates the power and important parameters, such as short-circuit current, open circuit voltage, maximum power, current and voltage at maximum power article. The program allows you to export the measured values to a text file. In the last chapter of this work is made control measurements of three samples of monocrystal photovoltaic cell by the measuring workplace. The measurement is compared with the reference device Solar Cell Tester.

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