京都大学 / 0048 / 新制・課程博士 / 博士(エネルギー科学) / 甲第21472号 / エネ博第377号 / 新制||エネ||74(附属図書館) / 京都大学大学院エネルギー科学研究科エネルギー変換科学専攻 / (主査)准教授 増田 開, 教授 長﨑 百伸, 教授 大垣 英明 / 学位規則第4条第1項該当 / Doctor of Energy Science / Kyoto University / DFAM

Syftet med denna avhandling är att bidra till forskningen av befintliga TMD:er (på Engelska transition metal dichalcogenide-TMD) som visar laddningstäthetsvågor och supraledning vid låga temperaturer (som 2H-TaS2). 2H-TaS2 är också känt för att visa supraledning vid 2K. Dessutom kommer en betydande del av denna avhandling att ägnas åt analysen av den elektronstrukturen nära Ferminivån av Cu-interkalerad TiSe2 och speciellt dess laddningstäthets-beteende vid temperaturer under 200K. Medan de teoretiska modellerna överlåts till teoretikerna, är följande sidor tillägnad att ge ett kvalitativt perspektiv på materialen. Avhandlingen är uppdelad i fyra huvudavsnitt: grundläggande begrepp, experiment-ella tekniker, tidigare rön och dataanalys. Det första avsnittet syftar till att introducera de viktigaste relevanta begreppen för att spåra de många möjliga fenomen som händer i bulk-TMD, speciellt Fe-dopade TaS2 i 2H-fasen och Cu-interkalerade TiSe2 i 1T fas. Elektronisk dispersion i fasta ämnen kommer att diskuteras på ett inledande och fenomenologiskt sätt utan rigorösa härledningar och ska hjälpa läsaren att förstå kapitlen därefter. / Motivation: The family of transition metal dichalcogenides (TMDs) has captured the fascination of researchers worldwide due to their remarkable properties and vast potential for various applications. These 2D materials exhibit a wide range of electronic, optical, and mechanical characteristics, making them incredibly versatile. From semiconductors to superconductors, TMDs offer a rich playground for exploration in condensed matter physics and materials science. Their unique properties are paving the way for breakthroughs in electronics, optoelectronics, energy storage, and beyond. As we delve deeper into the world of TMDs, we uncover new opportunities to revolutionize technology and enhance our understanding of the fundamental principles governing the behavior of matter. Joining the journey of discovery within the TMD family promises exciting challenges and the potential to contribute to the forefront of scientific and technological advancement.  The aim of this thesis is to add to the canon of existing TMDs that display charge density waves and superconductivity at low temperatures (like 2H-TaS2). 2H-TaS2 is also known to display superconductivity at 2K. Additionally, a substantial part of this thesis will be dedicated to the analysis of the electronic structure near the Fermi level of Cu-intercalated TiSe2 and especially its charge-density behaviour at temperatures below 200K. While the theoretical models are left to the theoreticians, the following pages are dedicated to giving a qualitative perspective on the materials. Thesis Outline: The primary goal of this thesis is to provide an introduction to both widely utilized and cutting-edge experimental setups employed by physicists worldwide. This will enable the acquisition of practical experience, facilitating the mastery of best practices and analysis techniques within the realm of experimental condensed matter physics. The thesis is split into four main sections: fundamental concepts, experimental techniques, previous findings and data analysis. The first section is occupied to introduce the main relevant concepts to trace the many possible phenomena happening in bulk TMDs, specifically Fe-doped TaS2 in the 2H phase and Cu-intercalated TiSe2 in the 1T phase. Subjects such as electronic dispersion in solids will be discussed in a rather introductory and phenomenological manner without rigorous derivations and shall aid the reader in understanding the chapters thereafter.

In this dissertation, we used a combination of synchrotron-based x-ray spectroscopic techniques such as angle-resolved photoelectron spectroscopy (ARPES), soft x-ray ARPES, hard x-ray photoelectron spectroscopy (HAXPES), and soft x-ray absorption spectroscopy (XAS) to investigate momentum-resolved and angle-integrated electronic structure of advanced three- and two-dimensional materials and interfaces. The results from the experiments were compared to several types of state-of-the-art first-principles theoretical calculations. In the first part of this dissertation we investigated the effects of spin excitons on the surface states of samarium hexaboride (SmB6), which has gained a lot of interest since it was proposed to be a candidate topological Kondo insulator. Here, we utilized high-resolution (overall resolution of approximately 3 meV) angle-resolved and angle-integrated valence-band photoemission measurements at cryogenic temperatures (1.2 K and 20 K) to show evidence for a V-shap / Physics

A simple model for above threshold ionization is presented in this work. It is based on modeling the pulsed laser beam involved in ionization as a cylinder consisting of elementary cells whose volumes are very small compared to the pulse volume. A cell is occupied by a number of photons determined probabilistically and found to follow the Poisson distribution. During ionization, resulting from the application of the laser field, a typical atom finds itself in one of the cells and one of its electrons absorbs the photon energy. The electron will be detached from its atom and will exit the interaction volume (the laser beam) if the energy contained in the particular cell is high enough. The model predicts all possible energies of the electrons exiting the beam and produces energy spectra associated with these electrons. While most of the other available models make only qualitative comparisons, we are able to make both qualitative and quantitative comparisons with experimental data. / Master of Science

Ziel dieser Arbeit war es, die Reaktivität von V2O3(0001) zu untersuchen. In dieser Arbeit wird sich zunächst mit dem epitaktischen Wachstum von V2O3-Filmen auf Au(111)und W(110) befaßt. Stöchiometrie und Geometrie der dünnen Filme wurden mit Röntgenphotoelektronenspektroscopie (XPS), Röntgenabsorptionsspektroskopie (NEXAFS) und Beugung niederenergetischer Elektronen (LEED) charakterisiert. Wir haben gezeigt, dass die Oberfläche zwei Terminierungen aufweist, die sich durch die An- bzw. Abwesenheit von zusätzlichen Sauerstoffatomen auf der Oberfläche unterscheiden. Diese Sauerstoffatome bilden Vanadylgruppen mit den Oberflächenvanadiumatomen, deren Streckschwingung mit Infrarotabsorptionsspektroskopie (IRAS) detektiert werden kann. Die elektronische Struktur des V2O3(0001) dünnen Filmes wurde mittels UV-Photoelektronenspektroskopie (UPS), XPS und NEXAFS untersucht. Wir haben bewiesen, dass die Bildung von Vanadylgruppen an der Oberfläche einen Metall-Isolator Übergang hervorruft. Für jede Oberflächenterminierung wurde ein elektronenenergieverlustspektrum (HREELS) gezeigt und mit einem Spektrum des isomorphischen Cr2O3 verglichen. Wasseradsorptionsexperimente zeigen, dass Wasser sowohl molekular als auch dissoziativ auf beiden Oberflächen adsorbiert. Die Dissoziationswahrscheinlichkeit hängt von der Terminierung und von der Bedeckung ab. Sie ist am höchsten bei großer Bedeckung auf der -V=O Oberfläche. CO2 Adsorption wurde mit UPS, XPS, HREELS und IRAS untersucht. CO2 physisorbiert auf der -V=O Oberfläche. Den IRA Spektren entnehmen wir, dass CO2 auf der -V Oberfläche als gewinkelte Spezies adsorbiert. Heizen dieser Spezies auf 200 K führt zu Karbonatbildung. Die Adsorption von CO verhält sich ähnlich wie die von CO2: nur kleine Menge adsorbieren auf der -V=O Oberfläche, während die -V Oberfläche viel reaktiver zu sein scheint. Winkelaufgelöste UPS Messungen deuten auf eine flache CO Adsorptionsgeometrie auf der -V=O Oberfläche hin. NEXAF- und IRA-Spektren zeigen dagegen, dass bereits bei 90 K sich CO2 auf der -V Oberfläche bildet. / In this work, we firstly showed that it is possible to grow thin V2O3(0001) films on Au(111) and W(110). The stoichiometry of the film has been characterized by X-ray photoelectron spectroscopy (XPS) and near edge X-ray absorption fine structure spectroscopy (NEXAFS). We inferred with infrared absorption spectroscopy (IRAS) the existence of two possible terminations of the V2O3(0001) surface. These two terminations differ only by the presence or not of oxygen atoms on the top of the surface, forming vanadyl groups with the surface vanadium atoms. We studied with UV photoelectron spectroscopies (UPS), XPS and NEXAFS the electronic structure of our V2O3(0001) thin films. Our data evidence a metal to insulator transition induced by the formation of the vanadyl groups on the surface. We performed high resolution electron energy loss spectroscopy (HREELS) measurements and presented a phonon spectrum for each termination. We compared our spectra with a spectrum of the isomorphic Cr2O3(0001). We studied the water adsorption properties of both surface terminations. We observed molecularly adsorbed water on both surface terminations for low exposures. For large exposures, water dissociates and OH-groups were detected. We performed CO2 adsorption experiments with UPS, XPS, HREELS and IRAS. The analyze of the IRAS results on the -V terminated surface leads us to the conclusion that CO2 adsorbs in a bent configuration. With UPS and XPS, we could evidence the formation of carbonates upon heating up to 200 K. On the -V=O surface, CO adsorbs molecularly and we concluded from the angle resolved UPS data that the CO molecule is strongly tilted on the surface. With NEXAFS and IRAS, we showed the formation of CO2 on the -V surface.

Die vorliegende Arbeit befasst sich mit der elektronischen Struktur von Bi-Kupraten vom Normalzustand bis in den supraleitenden Zustand. Der Normalzustand von einschichtigen Bi-Kupraten wurde mittels polarisationsabhängiger XAS untersucht. Es konnte eine deutliche Polarisationsabhängigkeit der CuL3- und OK-Kante innerhalb der Kupferoxidebene beobachtet werden. Insbesondere in den Merkmalen, die den dotierten Löchern zugeordnet werden. Die Winkelabhängigkeit geht über die erwartete Hybridisierung von Cu3dx^2-y^2- und O2px,y-Orbitalen hinaus, und unterstützt somit Theorien, die auch Orbitale ausserhalb der Kupferoxidebene zur Beschreibung der elektronischen Struktur einbeziehen. Desweiteren wurde beobachtet, dass die Ladungs-Transfer-Lücke sich mit steigender Lochkonzentration vergrößert konform zu Theorien zum Zusammenbruch der Zhang-Rice-Singuletts im überdotierten Bereich. Mittels ARPES wurden die Anregungen nahe der Fermikante in antinodaler Richtung an zweischichtigen Bi-Kupraten untersucht. Die komplexe Linienform im zweischichtigen Bi-Kuprat, die aus Interlageneffekten resultiert, wurde durch die gezielte Ausnutzung von Matrixelementeffekten vereinfacht. Dadurch konnten, in Kombination mit der spezifischen Ausrichtung der Polarisation, vorherige, sich scheinbar widersprechende Beobachtungen am einschichtigen und zweischichtigen Bi-Kuprat in Einklang gebracht werden. Es konnte gezeigt werden, dass im zweischichtigen Bi-Kuprat eine Anregung zusätzlich zum bindenden und antibindenden Band existiert, welche mit dem antibindenden Band korreliert zu sein scheint. Außerdem zeigt es Gemeinsamkeiten mit dem scharfen Peak, der im einschichtigen Bi-Kuprat gefunden wurde. So besteht es über die supraleitende Sprungtemperatur Tc hinaus, und verschwindet vermutlich bei oder über der Pseudolücken-Temperatur T*. Die ARPES Messungen lassen sich am Besten innerhalb des Modells elektronischer Inhomogenitäten erklären, welches Hochtemperatursupraleitung aus Streifen ableitet. / The electronic structure of Bi cuprates from the normal state down to the superconducting state has been investigated. The normal state electronic structure is probed by polarization dependent XAS on single layer Bi cuprates. With the x-ray beam being incident normal to the CuO2 plane the azimuthal angle was varied to explore the polarization effects on orbitals within the plane. In the CuL3- as well as the OK-edge spectra, the spectral features related to the doped holes showed a distinct polarization dependence within the CuO2 plane. The revealed polarization dependence is more complex than expected from hybridization of Cu3dx^2-y^2 and O2px,y orbitals only. Thus, the results support the inclusion of out-of-plane orbitals into the description of the electronic structure as has been previously theoretically proposed. Furthermore, the charge transfer gap has been observed to rise with rising hole concentration supporting theories of the instability of Zhang-Rice-singlets in the overdoped regime. By ARPES the excitations close to the Fermi surface in the antinodal region of double layer Bi cuprates have been investigated. The complex lineshape in double layer Bi cuprates that results from interlayer effects has been disentangled by exploiting matrix element effects. In combination with distinct polarization settings this enabled to unify seemingly inconsistent observations made on single and double layer Bi cuprates. The existence of an excitation additional to antibonding and bonding band could be shown in the double layer Bi cuprate. This additional excitation is probably connected to the antibonding band. It furthermore shows similarities to the sharp peak observed in single layer Bi cuprates. It persists to temperatures above the superconducting temperature Tc, and presumably vanishes at or above the pseudogap temperature T*. The ARPES results could be best explained within the model of electronic inhomogeneity which derives superconductivity from stripes.

Le premier chapitre de cette thèse présente l’intérêt et la problématique de la fonctionnalisation du graphène. L’état de l’art actuel de cette thématique est présenté. Dans un deuxième chapitre, nous discutons de façon détaillée des techniques expérimentales. Le chapitre 3 est centré sur la modification du graphène par réaction de cycloaddition par molécules dérivées de maleimides. Dans cette étude, nous démontrons le greffage covalent de molécules sur graphène épitaxié sans défaut sur SiC, ainsi qu’une tendance d’ouverture de bande interdite à l’aide de caractérisations par spectroscopie Raman, XPS, ARPS et STM. L’augmentation du rapport ID /IG des pics Raman et des liaisons sp3 sur l’échantillon en fonction de la durée de réaction chimique confirme le greffage. Par analogie avec les bords de marche de type « zigzag » ou « armchair », l’étude des ondes de densité de charge générées sur le graphène par les molécules permet de déterminer la nature des sous-réseaux mis en jeu lors du greffage. Dans le chapitre 4, nous étudions l’intercalation du terbium dans le graphène épitaxié. Après intercalation, l’ARPES montre une structure de bande complexe dont une composante correspond à une monocouche de graphène fortement dopée n. Nous avons pu isoler cette composante et montrer qu’elle provient du découplage de la couche tampon du substrat par le Terbium. Ces résultats sont confirmés par les données XPS. Le graphène avec Terbium intercalé produit également un réseau de lignes visibles par imagerie STM, qui a l’échelle atomique à basse tension montrent les 6 atomes de carbone de la structure en nid d’abeille, confirmant ainsi la transformation de la couche tampon en graphène. / The first chapter of this thesis explains the general motivation and problematic of graphene functionalization. It presents the state of the art of current research in this field. In the second chapter we discuss the experimental techniques in detail. Chapter 3 of this thesis work focuses on covalent modification of graphene by cycloaddition reaction of maleimide derivative molecules. In these studies we have confirmed the grafting of molecules on epitaxial defect free graphene on SiC and a tendency to open a gap with the help of Raman spectroscopy, XPS, ARPES and STM studies. An increase in the ID /IG ratio for Raman signature and sp3 bonding on the sample with increasing reaction time confirmed the reaction of molecules. By drawing an analogy with the standing waves obtained on armchair step edges of graphene and standing waves generated by molecules it was possible to determine the location of grafted molecules on the graphene lattice. In chapter 4, studies on terbium intercalation of epitaxial graphene are discussed. After intercalation a complex band structure was observed by ARPES with one spectra corresponding to highly n-doped graphene monolayer. We were able to isolate this highly n-doped graphene and confirmed its origin from decoupling of buffer layer and making it graphene like. These results are also supported by the XPS data. STM images on Terbium intercalated on buffer layer samples showed an interesting pattern of lines, atomic resolution scans at low bias voltage on these lines showed 6 atoms of hexagon confirming the transformation of buffer layer into graphene layer.

No description available.

The effect of spin-orbit coupling had once been thought to be a minor perturbation to the low energy band structure that could be ignored. Instead, a surge in recent theoretical and experimental efforts have shown spin-orbit interactions to have significant consequences. The main objective of this thesis is to investigate the role of the orbital sector and crystal symmetries in governing the spin texture in materials that have strong spin- orbit interactions. This can be accessed through a combination of spin- and angle-resolved photoemission spectroscopy (ARPES and spin-ARPES), both of which are powerful techniques for probing the one-electron band structure plus interactions, and supported by density functional theory calculations (DFT). We focus first on a globally inversion asymmetric material, the layered semiconductor BiTeI, which hosts a giant spin-splitting of its bulk bands. We show that these spin-split bands develop a previously undiscovered, momentum-space ordering of the atomic orbitals. We demonstrate this orbital texture to be atomic element specific by exploiting resonant enhancements in ARPES. These orbital textures drive a hierarchy of spin textures that are then tied to the constituent atomic layers. This opens routes to controlling the spin-splitting through manipulation of the atomic orbitals. This is contrasted against a material where inversion symmetry is globally upheld but locally broken within each monolayer of a two layer unit cell. Through our ARPES and spin-ARPES measurements of 2H-NbSe2, we discover the first experimental evidence for a strong out-of-plane spin polarisation that persists up to the Fermi surface in this globally inversion sym- metric material. This is found to be intrinsically linked to the orbital character and dimensionality of the underlying bands. So far, previous theories underpinning this (and related) materials' collective phases assume a spin- degenerate Fermi sea. We therefore expect this spin-polarisation to play a role in determining the underlying mechanism for the charge density wave phase and superconductivity. Through these studies, this thesis then develops the importance of global versus local inversion symmetry breaking and uncovers how this is intricately tied to the underlying atomic orbital configuration.

Cette thèse présente une étude expérimentale des propriétés électroniques de deux matériaux topologiques, notamment l’isolant topologique tridimensionnel irradié Bi₂Te₃ et le super-réseau topologique naturel Sb₂Te. Les deux systèmes ont été étudiés par des techniques basées sur la spectroscopie de photoémission. Les composés Bi₂Te₃ ont été irradiés par des faisceaux d’électrons de haute énergie. L’irradiation avec des faisceaux d’électrons est une approche très prometteuse pour réaliser des matériaux qui sont vraiment isolants dans le volume, afin de mettre en évidence le transport quantique dans les états de surface protégés. En étudiant une série d’échantillons de Bi₂Te₃ par la technique de spectroscopie de photoémission résolue en temps et en angle (trARPES), nous montrons que les propriétés topologiques des états de surface de Dirac sont conservées après irradiation électronique, mais leurs dynamiques ultra-rapides de relaxation sont très sensibles aux modifications reliées aux propriétés du volume. De plus, nous avons étudié la structure électronique des bandes occupées et inoccupées du Sb₂Te. En utilisant la microscopie de photoémission d’électrons à balayage (SPEM), nous avons constamment trouvé diverses régions non équivalentes sur la même surface après avoir clivé plusieurs monocristaux de Sb₂Te. Nous avons pu identifier trois terminaisons distinctes caractérisées par différents rapports stœchiométriques de surface Sb/Te et possédant des différences claires dans leurs structures de bandes. Pour la terminaison dominante riche en tellure, nous avons également fourni une observation directe des états électroniques excités et de leurs dynamiques de relaxation en ayant recours à la technique trARPES. Nos résultats indiquent clairement que la structure électronique de surface est fortement affectée par les propriétés du volume du super-réseau. Par conséquent, pour les deux systèmes, nous montrons que la structure électronique de surface est absolument connectée aux propriétés du volume. / This thesis presents an experimental study of the electronic properties of two topological materials, namely, the irradiated three-dimensional topological insulator Bi₂Te₃ and the natural topological superlattice phase Sb₂Te. Both systems were investigated by techniques based on photoemission spectroscopy. The Bi₂Te₃ compounds have been irradiated by high-energy electron beams. Irradiation with electron beams is a very promising approach to realize materials that are really insulating in the bulk, in order to emphasize the quantum transport in the protected surface states. By studying a series of samples of Bi₂Te₃ using time- and angle-resolved photoemission spectroscopy (trARPES) we show that, while the topological properties of the Dirac surface states are preserved after electron irradiation, their ultrafast relaxation dynamics are very sensitive to the related modifications of the bulk properties. Furthermore, we have studied the occupied and unoccupied electronic band structure of Sb₂Te. Using scanning photoemission microscopy (SPEM), we have consistently found various nonequivalent regions on the same surface after cleaving several Sb₂Te single crystals. We were able to identify three distinct terminations characterized by different Sb/Te surface stoichiometric ratios and with clear differences in their band structure. For the dominating Te-rich termination, we also provided a direct observation of the excited electronic states and of their relaxation dynamics by means of trARPES. Our results clearly indicate that the surface electronic structure is strongly affected by the bulk properties of the superlattice. Therefore, for both systems, we show that the surface electronic structure is absolutely connected to the bulk properties.