Submitted by Erika Demachki (erikademachki@gmail.com) on 2015-03-04T21:01:51Z No. of bitstreams: 2 Dissertação - Lidianne Dias de Alvarenga - 2013.pdf: 2431358 bytes, checksum: ad3757d9260c06bc86b5d120f613787e (MD5) license_rdf: 23148 bytes, checksum: 9da0b6dfac957114c6a7714714b86306 (MD5) / Approved for entry into archive by Erika Demachki (erikademachki@gmail.com) on 2015-03-04T21:02:03Z (GMT) No. of bitstreams: 2 Dissertação - Lidianne Dias de Alvarenga - 2013.pdf: 2431358 bytes, checksum: ad3757d9260c06bc86b5d120f613787e (MD5) license_rdf: 23148 bytes, checksum: 9da0b6dfac957114c6a7714714b86306 (MD5) / Made available in DSpace on 2015-03-04T21:02:03Z (GMT). No. of bitstreams: 2 Dissertação - Lidianne Dias de Alvarenga - 2013.pdf: 2431358 bytes, checksum: ad3757d9260c06bc86b5d120f613787e (MD5) license_rdf: 23148 bytes, checksum: 9da0b6dfac957114c6a7714714b86306 (MD5) Previous issue date: 2013-07-16 / Crystalline samples of CaTiO3: X with X = Tb or/and Yb were stoichiometrically prepared by the polymeric precursor method. The structure of the doped sample was analyzed by X-ray diffraction measurements. The diffraction pattern showed a single phase perovskite-related type orthorhombic. The X-ray diffraction was used to evaluate order-disorder materials calcined at different temperatures, and to calculate the lattice parameters and crystallite size of the materials. XANES spectra were used to evaluate the local order around the Ti atoms and correlating with pre presence of clusters TiO5-TiO6. The photoluminescent property of the obtained materials was investigated for the powders calcined at different temperatures and observed a greater issue for photoluminescent material heat treated at 500 ° C. / Amostras estruturalmente ordenadas e desordenadas de CaTiO3:X com X= Tb e/ou Yb foram estequiometricamente preparadas pelo método dos precursores poliméricos. A estrutura cristalina da amostra dopada foi analisada pelas medidas de difração de raios X. O padrão de difração obtido para as amostras estruturalmente ordenadas revelou uma única fase relacionada a fase perovsquita do tipo ortorrômbica do material. A difração de raios X também foi utilizada para avaliar a ordem-desordem estrutural dos materiais calcinados a diferentes temperaturas, bem como para calcular os parâmetros de rede e tamanho do cristalito dos materiais. Espectros de XANES foram utilizados para avaliar a ordem local ao redor dos átomos de Ti e correlacionar a altura da pré-borda com a presença de clusters de TiO5-TiO6. A propriedade fotoluminescente dos materiais obtidos foi investigada para os materiais calcinados em diferentes temperaturas, observando uma maior emissão fotoluminescente para o material tratado termicamente a 500ºC.

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / Neste trabalho apresentaremos os resultado de nossas investigacões e caracterização através da técnica de Espectroscopia de Fotoluminescência em 03(três) amostras que consiste de Poços Quânticos Quadrados Duplos que serão designados por essa abreviação DQWs de AlGaAs=AlAs de diferentes percentual de alumínio nos poços quânticos.

Orientador: Fernando Alvarez / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-24T01:43:09Z (GMT). No. of bitstreams: 1 Scoca_DiegoLeonardoSilva_M.pdf: 4961271 bytes, checksum: 2f6307ff4adda022c6df4b03d2014fdd (MD5) Previous issue date: 2013 / Resumo: Neste trabalho foi investigada a influência do ambiente químico na fotoluminescência de filmes finos de Oxi-nitreto de titânio dopados com érbio (TiNxOy : Er). Os filmes finos foram crescidos utilizando a técnica de Deposição por Feixe de Íons (IBD ¿ Ion Beam Deposition) e, a fim de modificar o ambiente químico ao qual os íons de Er3+ estão submetidos para controlar as características da fotoluminescência dos íons de érbio, foi realizado tratamento térmico sequencial sob atmosfera de oxigênio, durante 30 minutos em cada uma das seguintes temperaturas: 250°C, 500°C, 750°C e 1000°C. A investigação do estado atômico e da concentração relativa de cada elemento presente nos filmes foi analisada através da técnica de XPS, para as amostras antes (AD) de passarem pelo tratamento térmico e após todos os tratamentos serem realizados (TA). A estrutura cristalina dos filmes foi investigada por Difração de Raio-X à Baixo Ângulo (1°) antes (AD) e após (TA) o tratamento térmico, enquanto que, através de espectroscopia Raman, foi acompanhada cada etapa (temperatura) do tratamento térmico, possibilitando a identificação de duas fases distintas do TiO2, onde a 750°C foram detectados modos vibracionais referentes a fase anatásio e, a 1000°C, modos vibracionais relacionados a fase rutilo. Os resultados de XRD à Baixo Ângulo após o tratamento térmico corroboram com os resultados obtidos por espectroscopia Raman a mesma temperatura. As propriedades de fotoluminescência (PL) dos filmes estudados também foram investigadas em cada etapa do tratamento térmico, evidenciando a influência deste tratamento na fotoluminescência dos filmes. Vale ressaltar a influência do nitrogênio inicial, que por estar em diferentes concentrações em cada amostra, favoreceu diferentes ambientes químicos em função do tratamento térmico, que modificou notadamente as características de fotoluminescência das amostras. Também foi possível notar a influência das fases cristalinas do TiO2 na PL dos filmes, pois esta apresentou uma emissão estreita em ~ 550nm para os filmes estudados quando estes se cristalizaram na fase anatásio, comportamento inexistente quando os filmes se recristalizaram na fase rutilo do TiO2. Medidas de PL em função da temperatura também foram realizadas, de forma que o quenching das emissões na região verde do espectro eletromagnético pôde ser observado, fornecendo uma estimativa para a diferença entre os níveis 2H11/2 e 4S3/2 dê ~ 93 meV (750 cm-1), concordando bem com a separação teórica calculada entre esses níveis. Portanto, neste trabalho foram observadas cinco emissões dos íons trivalente de vi érbio, com comprimentos de onda ~525nm, ~ 550nm, ~ 680nm, ~ 980nm e ~ 1540nm referentes as respectivas transições 2H11/2 -> 4 I15/2, 4S3/2 -> 4 I15/2, 4F9/2 -> 4 I15/2, 4I11/2 -> 4 I15/2 e 4I13/2 -> 4 I15/2, sendo que a característica das emissões no visível foram controladas a partir da concentração inicial de nitrogênio e da temperatura do tratamento térmico / Abstract: In this work was investigated the influence of chemical environment on photoluminescence of Erbium doped Titanium Oxi-Nitride thin films (TiNxOy : Er). The thin films were grown by Ion Beam Deposition technique and, in order to study the influence of the chemical environment which Er3+ ions are subjected, was performed a sequential thermal annealing in an oxygen atmosphere, during 30 minutes in each of the following temperatures: 250°C, 500°C, 750°C e 1000°C. The investigation of binding state and the relative concentration of each element in the films was analyzed by XPS technique for samples "as deposited¿ (AD) and after the ¿thermal annealing¿ (TA). The crystalline structure of the films was investigated by X-Ray Diffraction at Small Angle before (AD) and after thermal annealing (TA), while using Raman spectroscopy, each step of the thermal annealing was monitored. With this procedure was possible to identify two distinct phases of TiO2, with vibrational modes emerging at the annealing temperature of 750°C referring to anatásio phase and, annealing temperature of 1000°C associated with rutile. The results of XRD at Small Angle after thermal annealing corroborate the Raman spectra obtained at the same temperature. The properties of photoluminescence (PL) of the studied films were investigated in each stage of thermal annealing, showing the influence of this treatment on photoluminescence of the films. It is worth mentioning the influence of initial nitrogen that, being in different concentrations in each sample, favored different chemical environments after the annealing procedure, which markedly changed the characteristics of photoluminescence of the samples. It was also noted the influence of the crystalline phases of TiO2 in the PL of the films, by displaying a narrow emission at ~ 550nm when the thin film crystallized into anatásio phase, behavior absent when the recrystallization of the films took place in the rutile phase TiO2. PL measurements as a function of temperature also were performed, so the quenching of emission in the green region of electromagnetic spectrum can be observed. These experiments provide an estimate of the difference between the levels 2H11=2 and 4S3/2 of ~ 93 meV (750 cm-1), results that agree fairly well with the calculated theoretical separation between these levels. Therefore, in this work were observed five emissions of trivalent erbium ions, with wavelenghts ~ 525nm, ~ 550nm, ~ 680nm, ~ 980nm and ~ 1540nm regarding their transitions 2H11/2 -> 4 I15/2, 4S3/2 -> 4 I15/2, 4F9/2 -> 4 I15/2, 4I11/2 -> 4 I15/2 e 4I13/2 -> 4 I15/2, with characteristic of the visible emissions were monitored from the initial concentration of nitrogen and the annealing temperature / Mestrado / Física / Mestre em Física

Semiconductor devices are commonplace in every household. One application of semiconductors in particular, namely solid state lighting technology, is destined for a bright future. To this end, ZnO nanostructures have gained substantial interest in the research community, in part because of its requisite large direct band gap. Furthermore, the stability of the exciton (binding energy 60 meV) in this material, can lead to lasing action based on exciton recombination and possibly exciton interaction, even above room temperature. Therefore, it is very important to realize controllable growth of ZnO nanostructures and investigate their properties. The main motivation for this thesis is not only to successfully realize the controllable growth of ZnO nanorods, but also to investigate the structure, optical and electrical properties in detail by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy (steady state and time resolved) and X-ray diffraction (XRD). Furthermore, strong rectification in the ZnO/p-Si heterojunction is demonstrated. Nanorods have been successfully synthesized on silicon by a two-step process, involving the pre-coating of the substrate by a seed layer, followed by the chemical bath deposition of the nanorods. ZnO seed layers with particle sizes of about 5 nm are achieved by the thermal decomposition of zinc acetate dihydrate dissolved in ethanol. The effects of the seed layer density on the distribution, alignment and uniformity of subsequently grown nanorods were studied. The aspect ratio, orientation and distribution of nanorods are shown to be well controlled through adjusting the density of the ZnO nanoparticles pre-coated onto the substrates. It is shown that the seed layer is a prerequisite for the growth of well aligned ZnO nanorods on lattice mismatched Si substrate. The influence of various nanorod growth parameters on the morphology, optical and electrical properties of the nanorods were also systematically studied. These include the oxygen to zinc molar ratio, the pH of the growth solution, the concentration of the reactants, the growth temperature and growth time, different hydroxide precursors and the addition of surface passivating agents to the growth solution. By controlling these xii parameters different architectures of nanostructures, like spherical particles, well aligned nanorods, nanoflowers and thin films of different thicknesses are demonstrated. A possible growth mechanism for ZnO nanostructures in solution is proposed. XRD indicated that all the as-grown nanostructures produced above 45 C crystallize in the wurtzite structure and post growth annealing does not significantly enhance the crystalline quality of the material. In material grown at lower temperature, traces of zinc hydroxide were observed. The optical quality of the nanostructures was investigated using both steady-state PL and time-resolved (TR) PL from 4 K to room temperature. In the case of as-grown samples, both UV and defect related emissions have been observed for all nanostructures. The effect of post-growth annealing on the optical quality of the nanostructures was carefully examined. The effect of annealing in different atmospheres was also investigated. Regardless of the annealing environment annealing at a temperature as low as 300 C enhances the UV emission and suppresses defect related deep level emission. However, annealing above 500 C is required to out-diffuse hydrogen, the presence of which is deduced from the I4 line in the low temperature PL spectra of ZnO. TRPL was utilized to investigate lifetime decay profiles of nanorods upon different post growth treatments. The bound exciton lifetime strongly depends on the post-growth annealing temperature: the PL decay time is much faster for as grown rods, confirming the domination of surface assisted recombination. In general, the PL analysis showed that the PL of nanorods have the same characteristics as that of bulk ZnO, except for the stronger contribution from surface related bound excitons in the former case. Surface adsorbed impurities causing depletion and band bending in the near surface region is implied from both time resolved and steady state PL. Finally, although strong rectification in the ZnO/p-Si heterojunction is illustrated, no electroluminescence has been achieved. This is explained in terms of the band offset between ZnO and Si and interfacial states. Different schemes are proposed to improve the performance of ZnO/Si heterojunction light emitting devices.

Organic semiconductors (OSCs), compared to the more traditional silicon, are enticing materials for the fabrication of optoelectronic devices (e.g., transistors, photovoltaic cells, light-emitting diodes) due notably to the lower cost associated with their preparation and purification, as well as their increased solubility in solvents which can accommodate large-scale fabrication. However, a higher degree of molecular disorder typically results in lower performance than silicon and remains an issue to be adressed. As the structure of an OSC is crucial to its performance, understanding the nature of this structure-property relationship is key to further the field of OSCs. In this regard, this thesis explores the optoelectronic properties of different π-conjugated organic frameworks which incorporate sulphur and nitrogen atoms along the rigid conjugated backbone for their desirable impacts on charge mobilities and stability. After a brief review of both small-molecule OSCs as well as key experimental techniques employed in the course of this work, chapter three covers the synthesis and characterization of dithiatetrazocines (DTTA), electron-deficient sulphur-nitrogen heterocycles, which were functionalized with various (oligo)thienyls pendants. The impact of both the substitution patterns and the degree of conjugation on the optoelectronic and solid-state properties of the ring system was investigated. The fourth chapter expands on previous work from the Brusso group that focused on extending the 2D conjugation of tetrathienoanthracene. While oligothienyls were previously shown to effectively increase the degree of conjugation, little to no change in device performance were observed, which was ascribed to disorder of the rotatable pendants. Here, rigid thieno[3,2-b]thiophene was used instead to increase both the degree of conjugation while maintaining structural rigidity, as assessed by optical, electrochemical and theoretical studies. The fifth chapter introduces preliminary work toward expanding the electron-deficient hexaazatrinaphtylene core with thiophene rings. The resulting concentric donor-acceptor structure promotes luminescent behavior with pronounced emission solvatochromism. Optical measurements were performed before and after intramolecular cyclization of the thiophene rings, to study the impact of aromatization on the optoelectronic properties of the system.

>Magister Scientiae - MSc / Magnetic luminescent nanoparticles of an iron oxide (Fe₃O₄) superparamagnetic core and an indium phosphide/zinc selenide (InP/ZnSe) quantum dot shell are reported. The magnetic nanoparticles (MNP’s) and quantum dots (QD’s) were each synthesized separately before conjugation. The MNP’s were functionalized with a thiol-group allowing the QD shell to bind to the surface of the MNP by the formation of a thiol-metal bond. The nanocomposite was capped with 3-mercaptopropionic acid, 1-propanethiol, 2-methyl-1-propanethiol and their properties investigated using the characterization techniques: high- resolution transmission electron microscopy (HR-TEM), energy-dispersive spectroscopy (EDS), UV-vis, scanning electron microscopy (SEM), superconducting quantum interference device (SQUID), and photoluminescence. These techniques yielded significant information on particle size, morphology, dispersion, and chemical composition including luminescence and florescence.

Two dimensional (2D) materials can withstand an order of magnitude more strain than their bulk counterparts, which results in dramatic changes to electrical, thermal and optical properties. These changes can be harnessed for technological applications such as tunable light emitting diodes or field effect transistors, or utilized to explore novel physics like exciton confinement, pseudo-magnetic fields (PMFs), and even quantum gravity. However, current techniques for straining atomically thin materials offer limited control over the strain field, and require bulky pressure chambers or large beam bending equipment. This dissertation describes the development of micro-electromechanical systems (MEMS) as a platform for precisely controlling the magnitude and orientation of the strain field in 2D materials. MEMS are a versatile platform for studying strain physics. Mechanical, electrical, thermal and optical probes can all be easily incorporated into their design. Further, because of their small size and compatibility with electronics manufacturing methods, there is an achievable pathway from the laboratory bench to real-world application. Nevertheless, the incorporation of atomically thin crystals with MEMS has been hampered by fragile, non-planer structures and low friction interfaces. We have innovated two techniques to overcome these critical obstacles: micro-structure assisted transfer to place the 2D materials on the MEMS gently and precisely, and micro-riveting to create a slip-free interface between the 2D materials and MEMS. With these advancements, we were able to strain monolayer molybdenum disulfide (MoS2) to greater than 1\% strain with a MEMS for the first time. The dissertation develops the theoretical underpinnings of this result including original work on the theory of operation of MEMS chevron actuators, and strain generated PMFs in transition metal dichalcogenides, a large class of 2D materials. We conclude the dissertation with a roadmap to guide and inspire future physicists and engineers exploring strain in 2D systems and their applications. The roadmap contains ideas for next-generation fabrication techniques to improve yield, sample quality, and add capabilities. We have also included in the roadmap proposals for experiments such as a speculative technique for realizing topological quantum field theories that mimics recent theoretical wire construction methods.

Carbonaceous materials, especially in micro and nanoscale, are useful in optical, energy storage, electronic, and biomedical devices or technologies. Techniques have been developed for preparation and modification of the carbonaceous materials, while it is still challenging to tailor the properties of carbonaceous materials effectively and economically. Laser is a powerful tool in academic and industrial laboratories, which also plays important roles in the preparation and modification of high-performance carbonaceous nanomaterials. In this study low-cost hydrothermal synthesis, high-temperature annealing, and Laser ablation (LAL) methods are developed to prepare functionalized carbon nanomaterials and modify their electrochemical and optical properties. Sub-micro hollow carbon spheres are synthesized via hydrothermal carbonization and high-temperature activation without any templates. Good capacitive properties are obtained after activation. The electrochemical properties of the activated carbon spheres depend on the media of the activation. The capacitance of the activated carbon spheres significantly increases with the addition of water as an activation agent. Carbon dots (CDs) are synthesized via a facile and economic hydrothermal (HTC) process using both small-molecule sugar (Xylose) and ground soybean residuals as precursors. The photoluminescence (PL) properties of the as-prepared and further-treated CDs are systematically studied. For the xylose-synthesized CDs, the initial green PL emission disappears after high-temperature treatment at 850 ℃ for 2 h. With further LAL treatment in NH4OH solutions, the PL emission is re-acquired, and a blue shift in emission is observed. Thus, the LAL is found to be an effective method to modify the CDs and their PL properties. For the nitrogen-doped soybean waste-derived carbon particles, they show strong blue emissions, which essentially disappear after 850 ℃ annealing for 2 hours in an argon flow. Then, PL appears again after laser ablation in a 10% NH4OH solution. The conversion from the blue emission to no emission and then back to blue emission again implies the effect of the functional groups on the PL properties of the CDs.

No description available.

The presented thesis deals with preparation of GaN nanocrystals with a metal core. In the theoretical part of the thesis GaN with its properties and applications is introduced. Further, some of the preparation methods of GaN are presented, mainly focusing on MBE growth. Deposition of metal NPs from colloidal solution and the state of the art approaches to enhance luminescence of GaN based structures is discussed. The experimental part follows three steps of preparation of GaN crystals with the Ag core. In the first step the Ag NPs are deposited on the Si(111) substrate. In the second step the Ga deposition process is optimized and in the third step the deposited Ga is transformed into GaN. After the Ga deposition the samples were analyzed by SEM/EDX and SAM/AES. The properties of prepared GaN crystals with the Ag core were studied by XPS, photoluminescence and Raman spectroscopy.