This thesis examines the packaging of high-temperature SiC power electronic devices. Current-voltage measurements were conducted on as-received and packaged SiC power devices. The planar structure was introduced and developed as a substitution for traditional wire-bonding vertical structure. The planar structure was applied to a high temperature (>250oC) SiC power device. Based on the current-voltage (I-V) measurements, the packaging structures were improved, materials were selected, and processes were tightly controlled. This study applies two types of planar structures, the direct bond and the bump bond, to the high-temperature packaging of high-temperature SiC diode. A drop in the reverse breakdown voltage was discovered in the packaging using a direct bond. The root cause for the drop in the breakdown voltage was identified and corrective solutions were evaluated. A few effective methods were suggested for solving the breakdown issue. The forward I-V curve of the planar packaging using direct bond showed excellent results due to the excellent electrical and thermal properties of sintered nanosilver. The packaging using a bump bond as an improved structure was processed and proved to possess desirable forward and reverse I-V behavior. The cross-sections of both planar structures were inspected. High-temperature packaging materials, including nano-silver paste, high-lead solder ball and paste, adhesive epoxy, and encapsulant, were introduced and evaluated. The processes such as stencil printing, low-temperature sintering, solder reflowing, epoxy curing, sputtering deposition, electroplating, and patterning of direct-bond copper (DBC) were tightly controlled to ensure high-quality packaging with improved performance. Finally, the planar packaging of the high temperature power device was evaluated and summarized, and the future work was recommended. / Master of Science

Made available in DSpace on 2014-12-17T14:55:00Z (GMT). No. of bitstreams: 1 JoabsonNC.pdf: 1023745 bytes, checksum: 5c279305bf7356a4d77b64ca8e0c6261 (MD5) Previous issue date: 2005-12-19 / This work presents a theoretical and numerical analysis using the transverse resonance technique (TRT) and a proposed MTRT applied in the analysis of the dispersive characteristics of microstrip lines built on truncated isotropic and anisotropic dielectric substrates. The TRT uses the transmission lines model in the transversal section of the structure, allowing to analyze its dispersive behavior. The difference between TRT and MTRT consists basically of the resonance direction. While in the TRT the resonance is calculated in the same direction of the metallic strip normal axis, the MTRT considers the resonance in the metallic strip parallel plane. Although the application of the MTRT results in a more complex equivalent circuit, its use allows some added characterization, like longitudinal section electric mode (LSE) and longitudinal section magnetic mode (LSM), microstrips with truncated substrate, or structures with different dielectric regions. A computer program using TRT and MTRT proposed in this work is implemented for the characterization of microstrips on truncated isotropic and anisotropic substrates. In this analysis, propagating and evanescent modes are considered. Thus, it is possible to characterize both the dominant and higher order modes of the structure. Numerical results are presented for the effective permittivity, characteristic impedance and relative phase velocity for microstrip lines with different parameters and dimensions of the dielectric substrate. Agreement with the results obtained in the literature are shown, as well as experimental results. In some cases, the convergence analysis is also performed by considering the limiting conditions, like particular cases of isotropic materials or structures with dielectric of infinite size found in the literature. The numerical convergence of the formulation is also analyzed. Finally, conclusions and suggestions for the continuity of this work are presented / Este trabalho apresenta os fundamentos te?ricos da t?cnica da resson?ncia transversa (TRT) e da t?cnica da resson?ncia transversa modificada (MTRT) aplicada na an?lise das caracter?sticas dispersivas de uma microfita considerando substratos diel?tricos isotr?picos e anisotr?picos truncados. A TRT utiliza o modelo da linha de transmiss?o na se??o transversal da estrutura, permitindo analisar o seu comportamento dispersivo. A diferen?a entre a TRT e MTRT consiste basicamente na dire??o da resson?ncia. Enquanto na TRT a resson?ncia ? calculada ao longo do eixo normal ? fita met?lica, a MTRT considera a resson?ncia no plano paralelo ? fita met?lica. Embora a aplica??o da MTRT resulte num circuito equivalente mais complexo, sua utiliza??o permite a caracteriza??o mais precisa, incluindo modo el?trico de se??o longitudinal (LSE) e modo magn?tico de se??o longitudinal (LSM), microfitas com substrato truncado, ou estruturas planares com multiplas regi?es diel?tricas. Um programa computacional utilizando a TRT e MTRT ? discutido e desenvolvido para caracteriza??o de microfitas sobre substratos isotr?picos e anisotr?picos truncados. Na an?lise, consideram-se modos propagantes e evanescentes. Assim, ? poss?vel caracterizar n?o somente o modo fundamental, mas tamb?m os modos de ordem superior da estrutura. S?o apresentados resultados num?ricos para as diversas grandezas, ou seja, permissividade efetiva, imped?ncia caracter?stica e velocidade de fase relativa para microfita com diferentes par?metros e dimens?es do substrato. S?o feitas compara??es com outros resultados dispon?veis na literatura e, tamb?m, com resultados determinados experimentalmente. Em alguns casos, os resultados s?o comparados como casos particulares de materiais isotr?picos ou de estruturas com diel?tricos de tamanho infinito encontradas na literatura, tendo sido observada uma excelente concord?ncia. Apresenta-se, ainda, um estudo de converg?ncia da formula??o proposta e, finalmente, conclus?es e sugest?es para continuidade do trabalho