With the rapid development of information technology, more and more bandwidth is required to transmit multimedia data. Since local communication networks are moving to wireless domain, it brings up great challenges for making integrated wideband wireless front-ends suitable for these applications. RF filtering is a fundamental need in all wireless front-ends and is one of the most difficult parts to be integrated. This has been a major obstacle to the implementation of low power and low cost integrated wireless terminals. <p> Lots of previous work has been done to make integrated RF filters applicable to these applications. However, some of these filters are not designed with standard CMOS technology. Some of them are not designed in desired frequency bands and others do not have sufficient frequency bandwidth. This research demonstrates the design of a tunable wideband RF filter that operates at 3.6 GHz and can be easily changed to a higher frequency range up to 5 GHz. This filter is superior to the previous designs in the following aspects: a) wider bandwidth, b) easier to tune, c) balancing in noise and linearity, and d) using standard CMOS technology. The design employs the state-of-the-art inductor degenerated LNA, acting as a transconductor to minimize the overall noise figure. A Q-enhancement circuit is employed to compensate the loss from lossy on-chip spiral inductors. Center frequency and bandwidth tuning circuits are also embedded to make the filter suitable for multi band operations. <p> At first, a second order bandpass filter prototype was designed in the standard 0.18 ìm CMOS process. Simulation results showed that at 3.6 GHz center frequency and with a 60-MHz bandwidth, the input third-order intermodulation product (IIP3) and input-referred 1 dB compression point (P1dB) was -22.5 dBm and -30.5 dBm respectively. The image rejection at 500 MHz away from the center frequency was 32 dB (250 MHz intermediate frequency). The Q of the filter was tunable over 3000 and the center frequency tuning range was about 150 MHz. <p> By cascading three stages of second order filters, a sixth order filter was designed to enhance the image rejection ability and to extend the filter bandwidth. The sixth order filter had been fabricated in the standard 0.18 ìm CMOS process using 1.8-V supply. The chip occupies only 0.9 mm 0.9 mm silicon area and has a power consumption of 130-mW. The measured center frequency was tunable from 3.54 GHz to 3.88 GHz, bandwidth was tunable from 35 MHz to 80 MHz. With a 65 MHz bandwidth, the filter had a gain of 13 dB, an IIP3 of -29 dBm and a P1dB of -46 dBm.

With the rapid development of information technology, more and more bandwidth is required to transmit multimedia data. Since local communication networks are moving to wireless domain, it brings up great challenges for making integrated wideband wireless front-ends suitable for these applications. RF filtering is a fundamental need in all wireless front-ends and is one of the most difficult parts to be integrated. This has been a major obstacle to the implementation of low power and low cost integrated wireless terminals. <p> Lots of previous work has been done to make integrated RF filters applicable to these applications. However, some of these filters are not designed with standard CMOS technology. Some of them are not designed in desired frequency bands and others do not have sufficient frequency bandwidth. This research demonstrates the design of a tunable wideband RF filter that operates at 3.6 GHz and can be easily changed to a higher frequency range up to 5 GHz. This filter is superior to the previous designs in the following aspects: a) wider bandwidth, b) easier to tune, c) balancing in noise and linearity, and d) using standard CMOS technology. The design employs the state-of-the-art inductor degenerated LNA, acting as a transconductor to minimize the overall noise figure. A Q-enhancement circuit is employed to compensate the loss from lossy on-chip spiral inductors. Center frequency and bandwidth tuning circuits are also embedded to make the filter suitable for multi band operations. <p> At first, a second order bandpass filter prototype was designed in the standard 0.18 ìm CMOS process. Simulation results showed that at 3.6 GHz center frequency and with a 60-MHz bandwidth, the input third-order intermodulation product (IIP3) and input-referred 1 dB compression point (P1dB) was -22.5 dBm and -30.5 dBm respectively. The image rejection at 500 MHz away from the center frequency was 32 dB (250 MHz intermediate frequency). The Q of the filter was tunable over 3000 and the center frequency tuning range was about 150 MHz. <p> By cascading three stages of second order filters, a sixth order filter was designed to enhance the image rejection ability and to extend the filter bandwidth. The sixth order filter had been fabricated in the standard 0.18 ìm CMOS process using 1.8-V supply. The chip occupies only 0.9 mm 0.9 mm silicon area and has a power consumption of 130-mW. The measured center frequency was tunable from 3.54 GHz to 3.88 GHz, bandwidth was tunable from 35 MHz to 80 MHz. With a 65 MHz bandwidth, the filter had a gain of 13 dB, an IIP3 of -29 dBm and a P1dB of -46 dBm.

The rapid development of wireless applications has created a demand for low-cost, compact, low-power hardware solutions. This demand has driven efforts to realize fully integrated, "single-chip" systems. While substantial progress had been made in the integration of many RF and baseband processing elements through the development of new technologies and refinements of existing technologies, progress in the area of fully monolithic filters has been limited due to the losses (low Qs) associated with integrated passive elements in standard IC processes. The work in this thesis focuses on the development low-loss, Q-enhanced LC filters in GaAs E/D-SAGFET technology. This thesis presents a methodology for designing Q-enhanced LC resonators and low-loss, monolithic LC filters based on these resonators. The first phase of this work focused on the Q-enhancement of LC resonator structures using FET-based active negative resistance circuits. Three passive resonators were designed, fabricated, and measured to determine their loss and frequency response. Furthermore, six Q-enhanced resonators were designed, fabricated, and measured to compare the performance of various negative resistance circuit designs. In the second phase of this work, four of these Q-enhanced resonator designs were used to implement fully-integrated second-order Butterworth bandpass filters. Each filter was designed for a 60 MHz, -3 dB bandwidth centered at 1.88 GHz, corresponding to the North American PCS transmit band. The best filter design achieves 0 dB of passband insertion loss while consuming 16 mA of current from a 3 V source (48 mW). Passband gain (up to 15 dB) can be achieved with increased bias current before instability is encountered. The filter provides more than 30 dB of rejection at 1.7 and 2 GHz and more than 70 dB of rejection below 1.5 GHz. In the filter passband, the noise figure is 12 dB and the output 1 dB compression point is -18 dBm. These Q-enhanced LC filters have potential application as image-reject filters in GaAs integrated transceiver designs. / Master of Science

In wireless transceiver circuits some of the most prevalent required off-chip components are discrete filters. These components are generally implemented with surface acoustic wave (SAW) or ceramic components. These devices are used in the receiver section for discrimination of incoming radio frequency (RF) signals as well as downconverted intermediate frequency (IF) signals. Presently, with the growing demand for multi-functional wireless consumer devices, the need for full integration of RF and logic circuits in wireless communications systems is becoming increasingly evident. If integrated RF filters with acceptable electrical characteristics could be realized, this might reduce or eliminate the currently required off-chip filters, prospectively decreasing the complexity, size, and cost of future wireless transceiver circuits and systems. The objective of the present research effort is to implement an integrated Q-enhanced LC bandpass filter in a prospective receiver front-end RF amplifier using the passive and active components available in a standard digital complementary metal-oxide semiconductor (CMOS) process. CMOS is the standard design medium for digital circuitry, and with the increased unity gain or transit frequency (fT) values that accompany steadily shrinking CMOS device sizes, the implementation of gigahertz frequency communications circuits in this medium is increasingly feasible. The circuit design specifically investigated in this work introduces a loss-compensated second-order gigahertz range bandpass filter implemented in a 0.18 쭠digital CMOS process provided by National Semiconductor. This filter incorporates a unique design technique that provides improvements in filter linearity through an independently variable bias level shifting method, while also facilitating prospective single-to-differential signal conversion. One distinctive characteristic of the investigated circuit, in comparison to other RF integrated filter work, is the implementation of a novel integrated transformer feedback method that facilitates magnetically coupled loss-restoration and subsequent filter Q-enhancement. Additionally, this loss restoration method is achieved using a single transistor, in contrast to the multi-transistor cross-coupled transconductor Q-enhancement technique commonly implemented in other previous and current integrated RF filter research.

The growing demand for wireless communication systems is driving the integration of radio frequency (RF) front-ends on the same chip with multi-band functionality and higher spectral efficiency. Microelectromechanical systems (MEMS) have an overarching applicability to RF communications and are critical components in facilitating this integration process. Among a variety of RF MEMS devices, piezoelectric MEMS resonators have sparked significant research and commercial interest for use in oscillators, filters, and duplexers. Compared to their bulky quartz crystal and surface acoustic wave (SAW) counterparts, MEMS resonators exhibit impressive advantages of compact size, lower production cost, lower power consumption, and higher level of integration with CMOS fabrication processes. One of the promising piezoelectric MEMS resonator technologies is the aluminum nitride (AlN) contour mode resonator (CMR). On one hand, AlN is chemically stable and offers superior acoustic properties such as large stiffness and low loss. Furthermore, CMRs offer low motional resistance over a broad range of frequencies (few MHZ to GHz), which are lithographically-definable on the same silicon substrates. To date, RF MEMS resonators (include CMRs) have been extensively studied; however, one aspect that was not thoroughly investigated is how to modulate/tune their equivalent parameters to enhance their performance in oscillators and duplexers. The goal of this thesis is to investigate various modulation methods to improve the thermal stability of the resonator, its “effective” quality factor when used in an oscillator, and build completely novel non-reciprocal components. Broadly defined, modulation refers to the exertion of a modifying or controlling influence on something, herein specifically, the resonator admittance. In this thesis, three categories of modulation methods are investigated: thermal modulation, force modulation, and external electronic modulation. Firstly, the AlN CMR’s center frequency can be tunned by the applied thermal power to the resonator body. The resonator temperature is kept constant (for example, 90 °C) via a temperature sensor and feedback control such that the center frequency is stable over the whole operation temperature range of interest (e.g. –35 to 85 °C). The maximum power consumption to sustain the maximum temperature difference (120 ºC in this thesis) between resonator and ambient is reduced to a value as low as 353 μW – the lowest ever reported for any MEMS device. These results were attained while simultaneously maintaining a high quality factor (up to 4450 at 220 MHz device). The feedback control was implemented by either analog circuits or via a microprocessor. The analog feedback control, which innovatively utilized a dummy resistor to compensate for temperature gradients, resulted in a total power consumption of 3.8 mW and a frequency stability of 100 ppm over 120 ºC. As for the digital compensation, artificial neural network algorithm was employed to facilitate faster calibration of look-up tables for multiple frequencies. This method attained a frequency stability of 14 ppm over 120 ºC. The second modulation method explored in this thesis is based on the use of an effective external force to enhance the 3-dB quality factor of AlN CMRs and improve the phase noise performance of resonator-based oscillators. The force modulation method was embodied in a two-port device, where one of the two ports is used as a one-port resonator and the other is driven by an external signal to effectively apply an external force to the first port. Through this technique, the quality factor of the resonator was boosted by 140 times (up to 150,000) and the phase noise of the corresponding oscillator realized using the resonator was reduced by 10 dBc/Hz. Lastly, a novel magnetic-free electrical circulator topology that facilitates the development of in-band full duplexers (IBFD) for simultaneous transmit and receive (STAR) is proposed and modeled. Fundamentally, a linear time-invariant (LTI) filter network parametrically modulated via a switching matrix is used to break the reciprocity of the filter. The developed model accurately predicts the circulator behavior and shows very good agreement with the experimental results for a 21.4 MHz circulators built with MiniCircuit filter and switch components. Furthermore, a high frequency (1.1 GHz) circulator was synthesized based on AlN MEMS bandpass filters and CMOS RF switches, hence showing a compact approach that can be used in handheld devices. The modulation frequency and duty cycle are optimized so that the circulator can provide up to 15 dB of isolation over the filter bandwidth while good power transfer between the other two ports is maintained. The demonstrated device is expected to intrinsically offer low noise and high linearity. The combination of the first two modulation methods facilitates the implementation of monolithic, temperature-stable, ultra-low noise, multi-frequency oscillator banks. The third modulation technique that was investigated sets the path for the development of CMOS-compatible in-band full duplexers for simultaneous transmit and receive and thus facilitates the efficient utilization of the electromagnetic spectrum. With the aid of all these three modulation approaches, the author believes that a fully integrated, multi-frequency, spectrum-efficient transceiver is enabled for next-generation wireless communications.