No description available.

No description available.

No description available.

No description available.

Neste trabalho investigamos a estrutura eletrônica de fios quânticos formados por distribuição de carga espacial, obtidos a partir da incorporação de dopantes nos degraus que delimitam planos vicinais em semicondutores. Estudos experimentais recentes, que combinam o crescimento epitaxial em planos vicinais (terraços) sobre o GaAs com as técnica de dopagem planar abrupta, sugerem que a incorporação do dopante (Silício) ocorre preferencialmente ao longo das linhas que delimitam os planos vicinais deste semicondutor. Baseados em resultados teóricos recentes, que sugerem que a aproximação semiclássica de Thomas-Fermi é capaz de reproduzir o potencial auto-consciente de sistemas eletrônicos criados a partir de distribuições de carga de origem puramente espacial, vários efeitos tais como: difusão de dopantes, temperatura finita e densidade residual de aceitadores puderam ser investigados neste nível de aproximação. As equações de Kohn-Sham na aproximação de densidade local (T=0K) foram também empregadas com o propósito de avaliar-se a possível influência de efeitos de não localidade do funcional energia cinética e efeitos de muitos corpos (troca e correlação) que foram ignorados pela abordagem semiclássica. / In this work we investigate the electronic structure of space-charge quantum wires obtained via attachment of donors in misorientation steps of semiconductor vicinal surfaces. Recent experimental studies, combining epitaxial growth on GaAs (100) vicinal surfaces (terraces) with the ?-doping technique, suggests that the incorporation of Silicon donors is preferential along the lines that delimit the vicinal terraces in this semiconductor. Based on recent theoretical results suggesting that the Thomas-Fermi is a reliable approximation for the self-consistent potential fo space-charge layers, we have employed this approximation to study the possible influence of various factors such as diffusion of dopants, finite temperature and residual density of acceptors on the electronic structure of these wires. The Kohn-Sham equations, within the local density approximation (T=0K), were also solved as the propose of evaluating the influence of effects due to the non-locality of the kinectic energy densities functional and many body effects (exchange and correlation) that were ignored in the semiclassical approximation.

Investigamos os efeitos de tamanho e do potencial de confinamento finito V0 nas taxas de espalhamento de absorção e de emissão de elétrons interagindo com os fônons longitudinais ópticos (fônons LO) de um fio quântico cilíndrico de GaAs à temperatura ambiente. Calculamos as taxas de espalhamento inter e intra-sub-banda e a taxa de espalhamento total para uma temperatura de 300 K, pois nesta temperatura o mecanismo de espalhamento dominante em semicondutores do tipo III-V é aquele devido aos fônons LO. Qualitativamente a taxa de emissão intra-sub-banda neste sistema tem o mesmo comportamento da sua correspondente em estruturas 2D. Para a absorção encontramos uma mudança suave de comportamento da taxa de absorção intra-sub-banda quando o raio do fio é da ordem do diâmetro do polaron (ou seja, da ordem de 80 ANGSTROM). Para raios pequenos ela tem um comportamento similar ao do bulk, mas para raios maiores ela cresce até atingir um máximo e depois cai monotonicamente à medida que aumentamos a energia do portador. Vimos que, o tamanho do fio e o potencial de confinamento têm grande influência na taxa de espalhamento total. / We investigated the size effects and the effects of the finite confining potential V0 on the absorption and emission scattering rates of electron interacting with longitudinal optical (LO) phonons for a cylindrical GaAs quantum wire. We calculated the inter and intrasubband total scattering rate for a temperature of 300K, because in this temperature the dominant mechanism of scattering in semiconductors III-V is that due LO phonons. Qualitatively the intrasubband emission scattering rate in this system has the same behavior of the correspondent in 2D structures. For absorption we found a smooth change in the intrasubband absorption scattering rate behavior when the radius the wire is near the polaron diameter (ie, about 80 ANGSTROM). For small radius the scattering rate has a similar behavior as that of the bulk, but for large radius it increases until reach a maximum and after ir drops monotonicaly with increase of carrier energy. We found that the size effect and the confining potential have a large influence in the total scattering rate

Neste trabalho investigamos a estrutura eletrônica de fios quânticos formados por distribuição de carga espacial, obtidos a partir da incorporação de dopantes nos degraus que delimitam planos vicinais em semicondutores. Estudos experimentais recentes, que combinam o crescimento epitaxial em planos vicinais (terraços) sobre o GaAs com as técnica de dopagem planar abrupta, sugerem que a incorporação do dopante (Silício) ocorre preferencialmente ao longo das linhas que delimitam os planos vicinais deste semicondutor. Baseados em resultados teóricos recentes, que sugerem que a aproximação semiclássica de Thomas-Fermi é capaz de reproduzir o potencial auto-consciente de sistemas eletrônicos criados a partir de distribuições de carga de origem puramente espacial, vários efeitos tais como: difusão de dopantes, temperatura finita e densidade residual de aceitadores puderam ser investigados neste nível de aproximação. As equações de Kohn-Sham na aproximação de densidade local (T=0K) foram também empregadas com o propósito de avaliar-se a possível influência de efeitos de não localidade do funcional energia cinética e efeitos de muitos corpos (troca e correlação) que foram ignorados pela abordagem semiclássica. / In this work we investigate the electronic structure of space-charge quantum wires obtained via attachment of donors in misorientation steps of semiconductor vicinal surfaces. Recent experimental studies, combining epitaxial growth on GaAs (100) vicinal surfaces (terraces) with the ?-doping technique, suggests that the incorporation of Silicon donors is preferential along the lines that delimit the vicinal terraces in this semiconductor. Based on recent theoretical results suggesting that the Thomas-Fermi is a reliable approximation for the self-consistent potential fo space-charge layers, we have employed this approximation to study the possible influence of various factors such as diffusion of dopants, finite temperature and residual density of acceptors on the electronic structure of these wires. The Kohn-Sham equations, within the local density approximation (T=0K), were also solved as the propose of evaluating the influence of effects due to the non-locality of the kinectic energy densities functional and many body effects (exchange and correlation) that were ignored in the semiclassical approximation.

Investigamos os efeitos de tamanho e do potencial de confinamento finito V0 nas taxas de espalhamento de absorção e de emissão de elétrons interagindo com os fônons longitudinais ópticos (fônons LO) de um fio quântico cilíndrico de GaAs à temperatura ambiente. Calculamos as taxas de espalhamento inter e intra-sub-banda e a taxa de espalhamento total para uma temperatura de 300 K, pois nesta temperatura o mecanismo de espalhamento dominante em semicondutores do tipo III-V é aquele devido aos fônons LO. Qualitativamente a taxa de emissão intra-sub-banda neste sistema tem o mesmo comportamento da sua correspondente em estruturas 2D. Para a absorção encontramos uma mudança suave de comportamento da taxa de absorção intra-sub-banda quando o raio do fio é da ordem do diâmetro do polaron (ou seja, da ordem de 80 ANGSTROM). Para raios pequenos ela tem um comportamento similar ao do bulk, mas para raios maiores ela cresce até atingir um máximo e depois cai monotonicamente à medida que aumentamos a energia do portador. Vimos que, o tamanho do fio e o potencial de confinamento têm grande influência na taxa de espalhamento total. / We investigated the size effects and the effects of the finite confining potential V0 on the absorption and emission scattering rates of electron interacting with longitudinal optical (LO) phonons for a cylindrical GaAs quantum wire. We calculated the inter and intrasubband total scattering rate for a temperature of 300K, because in this temperature the dominant mechanism of scattering in semiconductors III-V is that due LO phonons. Qualitatively the intrasubband emission scattering rate in this system has the same behavior of the correspondent in 2D structures. For absorption we found a smooth change in the intrasubband absorption scattering rate behavior when the radius the wire is near the polaron diameter (ie, about 80 ANGSTROM). For small radius the scattering rate has a similar behavior as that of the bulk, but for large radius it increases until reach a maximum and after ir drops monotonicaly with increase of carrier energy. We found that the size effect and the confining potential have a large influence in the total scattering rate

This thesis reports our work on transport related problems in mesoscopic physics using analytical as well as numerical techniques. Some of the problems we studied are: effect of interactions and static impurities on the conductance of a ballistic quantum wire[1], aspects of quantum charge pumping [2, 3, 4], DC and AC conductivity of a (dissipative) quantum Hall (edge) line junctions[5, 6], and junctions of three or more Luttinger liquid (LL)quantum wires[7]. This thesis begins with an introductory chapter which gives a brief glimpse of the underlying physical systems and the ideas and techniques used in our studies. In most of the problems we will look at the physical effects caused by e-e interactions and static scattering processes. In the second chapter we study the effects of a static impurity and interactions on the conductance of a 1D-quantum wire numerically. We use the non-equilibrium Green’s function (NEGF) formalism along with a self-consistent Hartree-Fock approximation to numerically study the effects of a single impurity and interactions between the electrons (with and without spin) on the conductance of a quantum wire [1]. We study the variation of the conductance with the wire length, temperature and the strength of the impurity and electron-electron interactions. We find our numerical results to be in agreement with the results obtained from the weak interaction RG analysis. We also discover that bound states produce large density deviations at short distances and have an appreciable effect on the conductance which is not captured by the renormalization group analysis. In the third chapter we use the equations of motion (EOM) for the density matrix and Floquet scattering theory to study different aspects of charge pumping of non-interacting electrons in a one-dimensional system. We study the effects of the pumping frequency, amplitude, band filling and finite bias on the charge pumped per cycle, and the spectra of the charge and energy currents in the leads[2]. The EOM method works for all values of parameters, and gives the complete time-dependences of the current and charge at any site of the system. In particular we study a system with oscillating impurities at several sites and our results agree with Floquet and adiabatic theory where these are applicable, and provides support for a mechanism proposed elsewhere for charge pumping by a traveling potential wave in such systems. For non-adiabatic and strong pumping, the charge and energy currents are found to have a marked asymmetry between the two leads, and pumping can work even against a substantial bias. We also study one-parameter charge pumping in a system where an oscillating potential is applied at one site while a static potential is applied in a different region [3]. Using Floquet scattering theory, we calculate the current up to second order in the oscillation amplitude and exactly in the oscillation frequency. For low frequency, the charge pumped per cycle is proportional to the frequency and therefore vanishes in the adiabatic limit. If the static potential has a bound state, we find that such a state has a significant effect on the pumped charge if the oscillating potential can excite the bound state into the continuum states or vice versa. In the fourth chapter we study the current produced in a Tomonaga-Luttinger liquid (TLL) by an applied bias and by weak, point-like impurity potentials which are oscillating in time[4]. We use bosonization to perturbatively calculate the current up to second order in the impurity potentials. In the regime of small bias and low pumping frequency, both the DC and AC components of the current have power law dependences on the bias and pumping frequencies with an exponent 2K−1 for spinless electrons, where Kis the interaction parameter. For K<1/2, the current grows large for special values of the bias. For non-interacting electrons with K= 1, our results agree with those obtained using Floquet scattering theory for Dirac fermions. We also discuss the cases of extended impurities and of spin-1/2 electrons. In chapter five, we present a microscopic model for a line junction formed by counter or co-propagating single mode quantum Halledges corresponding to different filling factors and calculate the DC [5] and AC[6] conductivity of the system in the diffusive transport regime. The ends of the line junction can be described by two possible current splitting matrices which are dictated by the conditions of both lack of dissipation and the existence of chiral commutation relations between the outgoing bosonic fields. Tunneling between the two edges of the line junction then leads to a microscopic understanding of a phenomenological description of line junctions introduced by Wen. The effect of density-density interactions between the two edges is considered exactly, and renormalization group (RG) ideas are used to study how the tunneling parameter changes with the length scale. The RG analysis leads to a power law variation of the conductance of the line junction with the temperature (or other energy scales) and the line junction may exhibit metallic or insulating phase depending on the strength of the interactions. Our results can be tested in bent quantum Hall systems fabricated recently. In chapter six, we study a junction of several Luttinger Liquid (LL) wires. We use bosonization with delayed evaluation of boundary conditions for our study. We first study the fixed points of the system and discuss RG flow of various fixed points under switching of different ‘tunneling’ operators at the junction. Then We study the DC conductivity, AC conductivity and noise due to tunneling operators at the junction (perturbative).We also study the tunneling density of states of a junction of three Tomonaga-Luttinger liquid quantum wires[7]. and find an anomalous enhancement in the TDOS for certain fixed points even with repulsive e-e interactions.

Esta dissertação discute o desenvolvimento de modelos analíticos e numéricos para as características elétricas de transistores de fios quânticos. Sendo assim, realizou-se um estudo implementando uma sequência de formalismos e ferramentas computacionais para solução auto-consistente das equações de Schrödinger e Poisson para poços e fios quânticos. Com a utilização deste método numérico pode-se determinar os auto-estados os níveis de energias e as densidades eletrônicas de portadores livres, dentre outros parâmetros relevantes para dispositivos de fio quântico. Adicionalmente, realizou-se um estudo analítico das heteroestruturas semicondutoras de interesse para a área de dispositivos de dimensionalidade reduzida. Este estudo levou a obtenção de resultados referentes ao desenvolvimento de modelos teóricos para as características elétricas de dispositivos baseados no mecanismo de tunelamento ressonante. Os resultados obtidos para a característica corrente-tensão (I-V) nas heteroestruturas investigadas foram contrastados satisfatoriamente com os encontrados na literatura. Este ferramental analítico foi então aplicado para computar o coeficiente de transmissão eletrônico de um diodo de fio quântico com tunelamento ressonante. / This dissertation discusses the development of analytical and numerical models for the electrical characteristics of quantum wire transistors. A study is carried out, implementing a sequence of formalisms and computational tools for the self-consistent solution of the equations of Schrödinger and Poisson in quantum wells and quantum wires. By using this numerical formulation it is possible to determine the eigenstates, energy levels and free-carrier electronic density, among other relevant parameters for quantum wire devices. In addition, we also conducted an analytical study concerning semiconductor heetrostrucures of interest for reduced dimensionality devices applications. This study led to results regarding the development of theoretical models for the electrical characteristics of devices based on the resonant tunneling mechanism. The results obtained for the current-voltage (I-V) characteristics in the investigated heterostructures were satisfactorily compared to those available at the published literature and this analytical tool was then used to compute the electronic transmission coefficient in a resonant tunneling quantum wire diode.