Submitted by Nadir Basilio (nadirsb@uninove.br) on 2016-09-01T21:26:55Z No. of bitstreams: 1 Alfredo Júlio Leal.pdf: 1312836 bytes, checksum: 20c3e58a33fec2442fa32185a8a3e4d5 (MD5) / Made available in DSpace on 2016-09-01T21:26:55Z (GMT). No. of bitstreams: 1 Alfredo Júlio Leal.pdf: 1312836 bytes, checksum: 20c3e58a33fec2442fa32185a8a3e4d5 (MD5) Previous issue date: 2016-03-28 / The Waste Electrical and Electronic Equipment (REEEs) are sourced from a range of electronic products to be disposed of in inappropriate ways become dangerous to health and the environment. The electronic components used in circuit boards, as well as those used in the production of high-tech and energy equipment, have a number of compounds known as Rare Earth Oxides. Rare Earth Oxides are ores with properties very similar to each other, allowing several applications such as magnets, ... oil, among other technologies. Due to the strategic value in technology development and the export quota reduction policies pursued by China, the countries of the first world and the emerging countries, including Brazil, are seeking a way to reactivate the mining of Rare Earth Oxide. Countries like Japan and Canada invest in technologies for the recycling of electronic waste, whose purpose is the extraction of Rare Earth Oxides. The recycling of electronic waste requires innovative technologies that can be found in the worldwide patent databases such as the European Patent Office (EPO) and the World Intellectual Property Organization (WIPO). In this sense, this study aims to analyze the contributions of patents information as a source of technologies for recycling of REEEs the extraction of Rare Earth Oxides. This study was based on a qualitative study of exploratory and descriptive, using a documentary and bibliographic research, with applications techniques of technological prospects based on a survey of patents information. To collect patents information in the EPO database, used the search Crawler Patent2Net, which is a data mining tool available in Espacenet base. The results of the research showed that 17 patents are related in some way to obtaining Rare Earth Oxide, the raw materials used were the scraps of vehicles, by having electronic components (integrated circuits and boards). In search any patent related to the use of waste electrical and electronic equipment was not found. Patents found are not registered in Brazil, so they are available for use. The processes most commonly used in patents are the metallurgical and chemical, such as calcination, leaching and thermal treatments. / Os Resíduos de Equipamentos Eletroeletrônicos (REEEs) são originados de uma gama de produtos eletrônicos que ao serem descartados de formas inadequadas tornam-se perigosos à saúde e ao meio ambiente. Os componentes eletrônicos utilizados em placas de circuitos, bem como, os utilizados na produção de equipamentos de alta tecnologia e de energia, possuem vários compostos conhecidos como os Óxidos de Terras Raras. Os Óxidos de Terras Raras são minérios com propriedades muito semelhantes entre si, permitindo diversas aplicações tais como: imãs, petróleo..., entre outras tecnologias. Devido ao valor estratégico no desenvolvimento tecnológico e nas políticas de redução de cota de exportação exercido pela China, os países do primeiro mundo e os emergentes, inclusive o Brasil, estão buscando uma forma de reativar a mineração de Óxido de Terras Raras. Países como o Japão e o Canadá investem em tecnologias para a reciclagem dos resíduos eletroeletrônicos, cujo intuito, é a extração dos Óxidos Terras Raras. A reciclagem dos resíduos eletroeletrônicos exige tecnologias inovadoras que podem ser encontradas nas bases de dados de patentes mundiais como o Europeia Patente Office (EPO) e o World Intellectual Property Organization (WIPO). Neste sentido, este trabalho visa analisar as contribuições das informações patentearias como fonte de tecnologias para reciclagem dos REEEs na extração dos Óxidos Terras Raras. O presente estudo fundamentou-se em uma pesquisa qualitativa de natureza exploratória e descritiva, utilizando-se de uma pesquisa documental e bibliográfica, com aplicações de técnicas de prospecções tecnológicas fundamentada em levantamento de informações patentearias. Para a coleta de informações patentearias na base de dados do EPO, utilizou-se o Crawler de busca Patent2Net, sendo este uma ferramenta de mineração de dados disponível na base Espacenet. Os resultados das pesquisas demonstraram que 17 patentes estão relacionadas de alguma forma na obtenção de Óxido de Terras Raras, as matérias prima utilizadas foram as sucatas de veículos, por possuírem componentes eletrônicos (placas e circuitos integrados). Na pesquisa não fora encontrado nenhuma patente relacionada à utilização de resíduos de equipamentos eletroeletrônicos. As patentes encontradas não estão registradas no Brasil, portanto estão disponíveis para o uso. Os processos mais utilizados nas patentes são os metalúrgicos e os químicos, como calcinação, lixiviação e tratamentos térmicos.

Die Erzeugung spinpolarisierter Ladungsträger in einem Halbleiter gilt als Grundvoraussetzung zur Realisierung spintronischer Bauelemente. Einen möglichen Ansatz zu deren Realisierung stellen Ferromagnet/Halbleiter(FM/HL)-Hybridstrukturen dar, deren Herstellung jedoch mit einigen Schwierigkeiten verbunden ist. Durch die Vermischung des ferromagnetischen Materials mit dem Halbleiter werden die elektronischen Eigenschaften der Hybridstruktur verändert und die Spininjektionseffizienz stark verringert. Durch das gezielte Einfügen einer dünnen Oxidschicht in den FM/HL-Grenzübergang kann die Diffusion unterdrückt, die Kristallqualität verbessert und die Effizienz der Struktur erhöht werden. Diese Arbeit beschäftigt sich mit dem Wachstum und der Charakterisierung dünner Oxidschichten, hergestellt mittels Molekularstrahlepitaxie. Zwei Seltenerdoxide, La2O3 und Lu2O3, werden auf GaAs-Substraten gewachsen und die Kristallqualität der Schichten miteinander verglichen. Mit der Heusler-Legierung Co2FeSi als Injektorschicht wird eine FM/Oxid/HL-Hybridstruktur auf Basis einer La2O3/GaAs(111)B-Struktur realisiert und magnetisch und elektrisch charakterisiert. Ein häufig verwendetes Barrierenmaterial in FM/HL-Hybridstrukturen ist Magnesiumoxid (MgO). In dieser Arbeit werden dünne MgO-Schichten auf GaAs(001) an der PHARAO-Wachstumsanlage am BESSY II erzeugt. Dies geschieht durch getrenntes Verdampfen von metallischem Mg bzw. Einleiten von molekularem Sauerstoff in die Wachstumskammer. Um die Oxidation des Halbleitersubstrats zu verhindern, wird vor dem MgO-Wachstum eine dünne Mg-Schicht abgeschieden. Abhängig von der Dicke dieser Schicht sind zwei in-plane-Orientierungen des MgO relativ zum GaAs kontrolliert einstellbar. Darüber hinaus werden Hybridstrukturen mit Eisen Fe als Injektorschicht und schrittweise erhöhter MgO-Schichtdicke gewachsen. Die Eindiffusion von Fe in das GaAs-Substrat nimmt mit zunehmender MgO-Schichtdicke um mehrere Größenordnungen ab. / The generation of spin-polarized charge carriers in a semiconductor is a basic building block for the implemention of spintronic devices. A feasible approach to their implementation are ferromagnet/semiconductur(FM/SC) hybrid structures, whose fabrication is associated with some issues. The intermixing of the ferromagnetic material with the semiconductor leads to distortion of the electrical properties of the hybrid structure and the spin injection efficiency is reduced. By intentionally inserting a thin oxide layer into the FM/SC interface diffusion can be suppressed while the crystal quality and the spin injection efficiency of the structure are both increased. In this thesis the growth and characterization of thin oxide films fabricated by molecular beam epitaxy are discussed. Two rare earth oxides, La2O3 and Lu2O3, are grown on GaAs substrates and their crystal qualities are compared. Based on La2O3/GaAs(111)B full FM/SC hybrid structures are grown with the Heusler alloy Co2FeSi as injection layer and characterized by magnetic and electrical means. Another material used as a barrier in FM/SC hybrid structures is magnesium oxide (MgO). Here, thin MgO layers are grown on GaAs(001) at the PHARAO system at BESSY II. The growth is conducted by the separated evaporation of metallic Mg and introducing molecular oxygen into the growth chamber. To avoid oxidation of the semiconducting substrate a thin Mg layer is deposited prior to the MgO growth. Depending on the Mg layer thickness two different MgO in-plane orientations can be achieved with respect to the GaAs substrate. Furthermore, FM/SC hybrid structures with iron Fe as injection layer are grown while the MgO layer thickness is increased gradually. The indiffusion of Fe into the GaAs substrate is suppressed by several orders of magnitude with increasing MgO layer thickness.