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No description available.

No description available.

No description available.

No description available.

No description available.

Vacuum microelectronic (VME) devices are of interest for the development of flat-screen displays and microwave devices. In many cases, their operation depends on the field emission of electrons from micron-sized cathodes (semiconductor or metal), into a vacuum. Major challenges to be met before these devices can be fully exploited include obtaining - low operating voltages, high maximum emission currents, uniform emission characteristics, and long-term emission stability. The research in this thesis concerns the production of silicon field emitters and the improvement of their emission properties by the process of anodisation. Anodisation was carried out for short times, in order to form a very thin layer of porous silicon (PS) at the surface of both p and p⁺-type silicon emitters. The aim in doing this was to form a high density of asperities over the surface of the emitters. It was the intention that these asperities, rather than the "macroscopic" apex of the emitter, would control emission. This was the first work of its kind to be carried out. Transmission electron microscopy was used to characterise the morphology of p and p⁺-type silicon emitters before and after anodisation. Both the structure and arrangement of the surface fibrils, the thickness of the PS layers at the apex and nature of PS cross-sections were studied. The morphology was correlated to subsequent field emission measurements. Field emission characteristics, before and after anodisation, were obtained using a scanning electron microscope adapted for field emission measurements, and a field emission microscope. Extensive measurements showed that, following anodisation, there was substantial improvement in emission behaviour. After anodisation, the following was found to be true: i) The starting voltage was reduced by up to 50% (with p<sup>+</sup -type PS emitters exhibiting a greater reduction in starting voltage than p-type PS emitters). ii) Number of emitting tips per array was increased. iii) Higher maximum currents (up to 3 times higher) were obtained before tips underwent destruction. iv) The resistive effect of the PS layer at the apex was important in determining the maximum current obtained from a tip. In addition, both field emission and field ion microscopy were used to identify the emission source following anodisation. It was shown that individual fibrils on the emission surface caused an increase in field enhancement over a flat plane, leading to emission at lower voltage. Overall, porous silicon appears to be a very promising material for field emission displays.

The deformational and microstructural behaviour of the commercial Al-Li alloy 8090 and an 8090 based composite containing silicon carbide particulate has been investigated. The materials were deformed at elevated temperature by the test methods of plane strain compression (PSC) and torsion to provide stress-strain data for the formulation of constitutive relationships. Torsion testing also provided high temperature ductility data. Isothermal annealing of rolled samples was carried out at the solution temperature of 530°C to investigate the recrystallisation kinetics and microstructures produced, with particular emphasis on the effect of the inclusion of reinforcement particles on the behaviour of the matrix alloy. Hyperbolic sine forms of constitutive equation have been produced and are found to provide good agreement with the experimental data. High values of the activation energy are calculated for the deformation of both the alloy and composite from the PSC test data. The equations obtained from the two different test methods are found to be comparable for the composite material, but a discrepancy is found for the monolithic alloy, where apparently less hardening results from torsion testing. A distinct transition in microstructure from recrystallised equiaxed grains when deformed at low temperature to an elongated, sometimes partially recrystallised, structure for material rolled at high temperature is present in the monolithic material. This is attributed to the balance of recrystallisation driving force and the Zener pinning force exerted by the 13' (A1 3Zr) phase. The composite material exhibited greatly enhanced recrystallisation kinetics in agreement with the theory of particle stimulated nucleation (PSN) of recrystallisation.

Graduation date: 1994

Modelling of phosphorus donor-based silicon (Si:P) qubit devices and mesoscopic single-electron devices is presented in this thesis. This theoretical analysis is motivated by the use of Si:P devices for scalable quantum computing. Modelling of Si:P single-electron devices (SEDs) using readily available simulation tools is presented. The mesoscopic properties of single and double island devices with source-drain leads is investigated through ion implantation simulation (using Crystal-TRIM), 3D capacitance extraction (FastCap) and single-electron circuit simulation (SIMON). Results from modelling two generations of single and double island Si:P devices are given, which are shown to accurately capture their charging behaviour. The trends extracted are used to forecast limits to the reduction in size of this Si:P architecture. Theoretical analysis of P2+:Si charge qubits is then presented. Calculations show large ranges for the SET measurement signal, Δq, and geometric ratio factor, α, are possible given the 'top-down' fabrication procedure. The charge qubit energy levels are calculated using the atomistic simulator NEMO 3-D coupled to TCAD calculations of the electrostatic potential distribution, further demonstrating the precise control required over the position of the donors. Theory has also been developed to simulate the microwave spectroscopy of P2+:Si charge qubits in a decohering environment using Floquet theory. This theory uses TCAD finite-volume modelling to incorporate realistic fields from actual device gate geometries. The theory is applied to a specific P2+:Si charge qubit device design to study the effects of fabrication variations on the measurement signal. The signal is shown to be a sensitive function of donor position. Design and analysis of two different spin qubit architectures concludes this thesis. The first uses a high-barrier Schottky contact, SET and an implanted P donor to create a double-well suitable for implementation as a qubit. The second architecture is a MOS device that combines an electron reservoir and SET into a single structure, formed from a locally depleted accumulation layer. The design parameters of both architectures are explored through capacitance modelling, TCAD simulation, tunnel barrier transmission and NEMO 3-D calculations. The results presented strengthen the viability of each architecture, and show a large Δq (> 0.1e) can be expected.