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Design, Implementation, and Test of a Micro Force Displacement SystemCate, Evan Derek 01 June 2014 (has links) (PDF)
The design and implementation of a micro-force displacement system was completed to test the force-displacement characteristics of square silicon diaphragms with side lengths of 4mm, 5mm, and 7mm with a thickness of 10um. The system utilizes a World Precision Instruments Fort 10g force transducer attached to a World Precession Instruments TBM4M amplifier. A Keithley 2400 source meter provided data acquisition of the force component of the system. A micro prober tip was utilized as the testing probe attached to the force transducer with a tip radius of 5um. The displacement of samples was measured using a Newport M433 linear stage driven by a Newport ESP300 motion controller (force readings at constant displacement intervals). An additional 3 linear stages were used to provide X and Y-axis positioning of samples beneath the probe tip. The system components were mounted to an optical bench to provide stability during testing. C# was used to deliver the code to the individual components of the system. In addition the software provides a graphic user interface for future users that includes a calibration utility (both X/Y and force calibration), live force-displacement graph, motion control, and a live video feed for sample alignment. Calibration of the force transducer was accomplished using an Adam Equipment PGW153e precision balance to assign force values to the voltage data produced from the transducer. Displacement calibration involved the use of a microscope calibration micrometer. The system was characterized with an equipment variability of ±1.02mg at 1.75um, and ±1.86mg at 3.5um with the ability to characterize samples with stiffness less than 279 mg/um. The displacement resolution of the system was determined to be 35 nm per step of the linear stages. The diaphragms created to test the machine were fabricated from 10um thick device layer SOI wafers. An etch consisting of 38g/l silicic acid, 7g/l ammonium persulfate, and 5% TMAH was used to reduce the formation of hillocks, and provide a consistent etch rate. A Gage R&R study was performed on the fabricated diaphragms, indicating that the deflection produced by the 4mm, 5mm, and 7mm diaphragms was resolvable by the machine. A model was developed to correlate theoretical results to the observed measured values.
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Intermédialité et subjectivité dans l'oeuvre de Marilyn MansonAlloi, Eric January 2001 (has links)
Mémoire numérisé par la Direction des bibliothèques de l'Université de Montréal.
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Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon StructuresNdoye, Coumba 20 January 2011 (has links)
The semiconductor industry scaling has mainly been driven by Moore's law, which states that the number of transistors on a single chip should double every year and a half to two years. Beyond 2011, when the channel length of the Metal Oxide Field effect transistor (MOSFET) approaches 16 nm, the scaling of the planar MOSFET is predicted to reach its limit. Consequently, a departure from the current planar MOSFET on bulk silicon substrate is required to push the scaling limit further while maintaining electrostatic control of the gate over the channel. Alternative device structures that allow better control of the gate over the channel such as reducing short channel effects, and minimizing second order effects are currently being investigated.
Such novel device architectures such as Fully-Depleted (FD) planar Silicon On Insulator (SOI) MOSFETS, Triple gate SOI MOSFET and Gate-All-Around Nanowire (NW) MOSFET utilize Silicon on Insulator (SOI) substrates to benefit from the bulk isolation and reduce second order effects due to parasitic effects from the bulk. The doping of the source and drain regions and the redistribution of the dopants in the channel greatly impact the electrical characteristics of the fabricated device. Thus, in nano-scale and reduced dimension transistors, a tight control of doping levels and formation of pn junctions is required. Therefore, deeper understanding of the lateral component of the diffusion mechanisms and interface effects in these lower dimensional structures compared to the bulk is necessary.
This work focuses on studying the dopant diffusion mechanisms in Silicon nanomembranes (2D), nanoribbons (â 1.Xâ D), and nanowires (1D). This study also attempts to benchmark the 1D and 2D diffusion against the well-known bulk (3D) diffusion mechanisms. / Master of Science
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Reconfigurable Threshold Logic Gates Implemented in Nanoscale Double-Gate MOSFETsTing, Darwin Ta-Yueh 03 October 2008 (has links)
No description available.
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Design, Fabrication, and Characterization of Field-Effect and Impedance Based BiosensorsWen, Xuejin 08 September 2011 (has links)
No description available.
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Apodized Coupled Resonator Optical Waveguides: Theory, design and characterizationDoménech Gómez, José David 23 September 2013 (has links)
In this work we propose the apodization or windowing of the coupling coefficients of the unit cells conforming a coupled resonator device as a mean to reduce the level of secondary sidelobes in the case of SCISSOR configuration [7] or reducing the passband ripples in the case of CROW configuration [8]. This technique is regularly employed in the design of digital filters [18] and has been applied as well in the design of other photonic devices such as corrugated waveguide filters [9] and fiber Bragg gratings [19]. We also propose a novel technique for the apodization of coupled resonator structures by applying a longitudinal offset between resonators in order to modify the power coupling constant, which alleviates the technical requirements required for the production of these devices. We will demonstrate the design, fabrication and characterization of CROW structures employing the apodization through the aforementioned technique. / Doménech Gómez, JD. (2013). Apodized Coupled Resonator Optical Waveguides: Theory, design and characterization [Tesis doctoral]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/32278
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Lélia et le mal du siècleCampeau, Renée January 1993 (has links)
Mémoire numérisé par la Direction des bibliothèques de l'Université de Montréal.
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L'influence du facteur gémellaire sur l'acquisition d'une identité distincteBernier, Josée January 2004 (has links)
Thèse numérisée par la Direction des bibliothèques de l'Université de Montréal.
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L'effet du contreconditionnement de l'attitude à l'égard d'autrui sur le concept de soi d'adolescents de niveau secondaire II et IVPaquet, Gisèle 25 April 2018 (has links)
Québec Université Laval, Bibliothèque 2015
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Trop d'images : entre image médiatique et image du corpsBerthiaume, Joan 02 February 2024 (has links)
Ce mémoire aborde en profondeur diverses notions et concepts interreliés en art, philosophie et psychologie sociale comme la représentation du corps et son instrumentalisation dans l’image publicitaire ou encore l’hypermédiatisation et son conditionnement esthétique. Les différentes parties de cet ouvrage sont construites dans la même lignée que ma démarche de création, c’est-à-dire de manière fragmentée et dont la finalité témoigne d’un art de l’assemblage. En m’appuyant sur une vision personnelle étoffée par des recherches sur l’image du corps et sa médiatisation, j’exprime comment notre rapport à la société et à notre production d’images me sert de filon artistique. J’illustre mes propos avec des travaux d’artistes d’avant-garde des années 1960 et, bien entendu, avec les images issues de ma pratique artistique des deux dernières années. Ces dernières présentent principalement des installations vidéo multiécran comprenant des mosaïques d’images qui mettent de l’avant un travail de montage vidéo et de composition visuelle conçue d’images d’archives, de captures vidéographiques ainsi que macrovidéographiques d’ordre documentaire.
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