Magnetic random­access memory (MRAM) devices have been widely studied since the 1960s. During this time, the size of spintronic devices has continued to decrease. Conse quently, there is now an urgent need for new low­dimensional magnetic materials to mimic the traditional structures of spintronics at the nanoscale. We also require new effective mechanisms to conduct the main functions of memory devices, which are: reading, writ ing, and storing data. To date, most research efforts have focused on MRAM devices based on magnetic tun nel junction (MTJ), such as a conventional field­driven MRAM and spin­transfer torque (STT)­MRAM devices. Consequently, many efforts are currently focusing on new alterna tives using different techniques, such as spin­orbit torque (SOT) and magnetic skyrmions (a skyrmion is the smallest potential disruption to a uniform magnet required to obtain more effective memory devices). The most promising memory devices are SOT­MRAMs and skyrmion­based memories. This study investigates the magnetic properties of 1T­phase vanadium dichalcogenide (VXY) Janus monolayers, where X, Y= S, Se, or Te (i.e., monolayers that exhibit inversion symme try breaking due to the presence of different chalcogen elements). This study is developed along four directions: (I) the nature of the magnetism and the SOT effect of Janus mono layers; (II) the Dzyaloshinskii Moriya interaction (DMI); (III) investigation of stability en hancement by adopting practical procedures for industry; and (IV) study of the effect of a hexagonal boron nitride (h­BN) monolayer as an insulator on the magnetism of the VXY monolayer. This study provides a clear perspective for the next generation of memory de vices, such as SOT­MRAMs based on transition metal dichalcogenide monolayers.