Abstract In this study, copper oxide thin films prepared by DC reactive magnetron sputtering using a Cu target were studied. By changing the oxygen partial pressure ratios and sputtering power and deposition temperatures during sputtering, we obtained copper oxide thin films with different properties. The structures of copper oxide thin films were characterized by glancing incident angle X-ray diffraction. Clear crystal orientation at (002) plane were observed at 50% and 60% oxygen partial pressure ratio. The preferred orientation at (111) plane were observed with heating substrate to 200¢J. The optical and electrical properties of cupric oxide thin films were measured by UV-VIS spectrophotometer and four-point probe system. The cupric oxide thin films deposited with heating substrate to 200¢J exhibited the resistivity of 0.77£[-cm and optical band gap of 1.57 eV. Keywords¡G cupric oxide, thin film, magnetron sputtering, band gap

The electro-optical properties of the ZnO thin film are affected by the deposition parameters. In this study, we find the optimum growth parameters to grow high quality ZnO film. We change the RF power to adjust the surface roughness. The higher RF power will result in a higher deposition rate and rough surface roughness. We obtained an optimum surface roughness of 1.811nm at 50W RF power. The ZnO films have more than 80% transmittance in visible range, and obvious absorption in UV range. A significant peak in the wavelength of 385nm is observed in PL measurement. For the electric characteristics, the resistivity of as-grown ZnO films is high and decreases with post annealing treatment. We have obtained a minimum resistivity of 2.764¡Ñ10-2(£[-cm) at 700oC annealing treatment. Under the fixed 50RF power and 5sccm Ar flux, the optical characteristics and the crystal qualities are worse in the lower pressure (below 5mTorr). The ZnO films have lowest resistivity of 1.826¡Ñ10-2(£[-cm) in the 15mTorr and, strongest PL intensities in 25mTorr after 700oC annealing treatment. After the optimum growth condition, we enhance the optical characteristics through the surface Plasmon effect of the metal nanoparticles. The nano gold particles in the diameter of 50nm and 200-250nm can be obtained under the 5nm and 10nm Au film deposition and annealing at 700oC, respectively. For the optical characteristics, the PL intensity and optical transmittance are enhanced dependent on the size and position of the gold nanoparticles. For the electric characteristics, the n-ZnO/p-Si shows a good rectification effect. The mechanisms of current conduction are space charge current limit, and tunnel current. Sample with 50nm diameter has a significant space charge current limit mechanism. In the C-V measurement, we observed the hysteresis curve in the sample with gold nanoparticles. The sample with larger gold particles have larger memory window of ¡µVFB=0.23.

The Pd77Cu6Si17 (PCS) thin film metallic glasses (TFMGs) with high glass forming ability and hardness are selected as a hard coating for improving the surface hardness of the AZ31 magnesium alloy. Both micro- and nano-indentation tests are conducted on the specimens with various PCS film thicknesses from 30 to 2000 nm. The apparent hardness and the relative indentation depth (£]) are integrated by a quantitative model. The involved interaction parameters and relative hardness values are extracted from iterative calculations. According to the results, surface hardness can be enhanced greatly by PCS TFMGs in the shallow region, followed by gradual decrease with increasing £] ratio. In addition, the specimens with thinner coating (for example, 200 nm) show greater substrate-film interaction and those with thick coating (for example, 2000 nm) become prone to film cracking. The optimum TFMG coating thickness in this study is estimated to be around 200 nm. Keywords: Magnesium alloys, hardness, sputtering, thin film metallic glass, nanoindentation

Ti thin films were deposited by a radio frequency ion-beam sputtering system. Deposition resulted from sputtering a Ti target (99.995%) with an Ar ion beam. Epitaxial TiO thin films with different orientations, which came from oxidizing Ti thin films, were prepared on single-crystal NaCl substrate. The formation of epitaxial TiO2 thin films (anatase or rutile phase) by oxidation of epitaxial TiO thin films was investigated. The composition, microstructure, and orientation relationships between interfaces were analyzed by TEM and Fourier transformation in the present report. Epitaxial TiO thin films with different orientations were prepared on single-crystal NaCl substrate in the present study. The formation of epitaxial TiO2 thin films (anatase or rutile) by oxidation of epitaxial TiO thin films, which were first grown on different NaCl surfaces, was investigated. The composition, microstructure, and orientation relationships between interfaces were analyzed by TEM and Fourier transformation in this report. The TiO to anatase phase transformation has been studied by transmission electron microscopy in this Article. It is shown that prior formation of TiO from Ti film can induce the formation of anatase by thermal oxidation in air, otherwise only rutile is formed. Ti film deposited on the NaCl (001) surface is induced to form epitaxial TiO film by thermal oxidation in air. Further thermal oxidation in air partially transformed TiO into anatase (A) with a parallel orientation relationship of {200}A // {200}TiO. Detailed analysis of the lattice fringes image of the specimen reveals the presence of very high density of misfit dislocations. The TiO to anatase transformation is reversible as further annealing in a vacuum can turn the anatase back into TiO and eliminates the misfit dislocations. The transformation is analyzed in terms of the crystal structure, orientation relationship, and the dislocation distribution, which show that the TiO to anatase transformation is due to the close similarity between their structures. (Chapter 1) The anatase TiO2 (001) surface was shown to have superior photoreactivity. Epitaxial anatase (001) films used to be grown on single-crystal SrTiO3 and LaAlO3 substrates. It is shown in this report that these films can be grown also on the NaCl substrate, which is much cheaper and easily prepared. Epitaxial TiO (001) films were first grown on the NaCl (001) substrate. By testing the TiO-to-anatase transformation over temperature and time ranges, an epitaxial anatase (001) film was prepared by simple thermal oxidation in air. The formation of a single-variant anatase (001) film instead of a multiple-variant film is discussed in this report. (Chapter 2) An epitaxial rutile (100) thin film has been grown on NaCl substrate instead of other more expensive substrates. An epitaxial TiO (111) thin film with minor Ti phase was first deposited on the NaCl (111) surface by thermal evaporation. It was then transformed into the epitaxial rutile (100) thin film by subsequent thermal oxidation in air. TEM was used to analyze the phases and the orientation relationship. Our previous result showed that an epitaxial anatase (001) film was formed on the NaCl (001) surface in a similar process. The substrate-dependent formation of different TiO2 phase is also discussed in terms of the mismatch of the interfaces. (Chapter 3)

The purpose of this study is to investigate the effects on DC sputtered thin films after different surface treatments on aluminum targets. Abrasive papers and nonwovens were used to polish the aluminum targets before sputtering. Surface morphology of the aluminum targets before and during sputtering were characterized using surface profiler. In addition, the erosion rate of the aluminum targets was obtained by measuring the changes of the erosion depth with sputtering time at a fixed processing condition. On the other hand, the surface morphology and electrical characteristics of the deposited thin films with respect to different aluminum targets were investigated. We found that surface roughness of the treated aluminum targets is of great importance to the stability of the film quality.

In this study, the reactive rf magnetron sputtering was used to deposit zinc oxide (ZnO) thin films on Si substrate. The optimal sputtering parameters for film as luminescence application were found to be oxygen concentration (O2/O2+Ar) of 21%, RF power of 100W, substrate temperature of 500¢XC and sputtering pressure of 5 mtorr. Beside, the thermal treatment procedure was carried out to improve the luminescence characteristics of ZnO thin films. The physical characteristics of ZnO thin films deposited on Si substrate with different sputtering parameters were obtained by the analyses of XRD and SEM. The optical properties of ZnO thin films were discussed also. Ultraviolet (UV) visible spectrometer and photoluminescence spectrometer were used to measure the visible transmission and photoluminescence characteristics (PL), respectively. According to the experimental results, it is found that under optimal sputtering parameters, the emitted UV light intensity will be increased as the FWHM in x-ray diffraction is decreased, i.e. the grain size is larger. In addition, after post-deposition annealing at 800¢J, the strongest UV emission intensity was obtained in the nitrogen ambient and the strongest visible (green) emission intensity was obtained in the oxygen ambient.

Aluminum nitride (AlN) thin film is a promising material as buffer layer in GaN-based optoelectronic and electronic devices or as a substrate to fabricate Surface Acoustic Wave (SAW) and Film Bulk Acoustic wave Resonant (FBAR) devices in high frequency in wireless (>1GHz) communication technology. Aluminum nitride, thin film with the c-axis normal to the film is favored in a low energy deposition condition because it places the packed hexagonal basal plane parallel to the substrate surface. Grains of this orientation have a low surface energy which favors rapid growth in a columnar structure. In this experiment r.f. dual ion beam sputtering (DIBS) system is used to prepare the AlN films on Si (100) substrate. Various processing variable were tested to deposit AlN films with desirable properties. After systematic testing, a high quality film with preferred c-axis orientation was grown successfully on Si (100) substrate with Al target under the process parameters of 700 ev energy flux; 55% N2 / (N2+Ar) ratio; 4X10 - 4 torr working pressure with no heating of substrate. The AlN target is also used. The results show the great sensitivity of the films to oxygen-containing environments. Only under low residual oxygen pressure, could aluminum nitride be grown well. The deposited AlN thin film characteristic were studied by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Transmission Electron Microscopy (TEM), Secondary Ion Mass Spectrometry (SIMS) and Electron Spectroscopy for Chemical Analysis (ESCA).

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Nanocrystalline £\-Zr condensates deposited by ion beam sputtering on the NaCl (100) surfaces and then annealed at 100 ¢J to 750 ¢J in air. The phases present were identified by transmission electron microscopy to be nanometer-size £\-Zr+ZrO¡B£\-Zr+ZrO+c-ZrO2¡Bc-ZrO2¡Bc-+t-ZrO2¡Bt-ZrO2¡Band t-+m-ZrO2 phase assemblages with increasing annealing temperature. The zirconia showed strong {100} preferred orientation due to parallel epitaxy with NaCl (100) when annealed between 150 ¢J and 500 ¢J in air. The c- and t-zirconia condensates also showed (111)-specific coalescence among themselves. The c- and/or t-ZrO2 formation can be accounted for by the small grain size, the presence of low-valence Zr cation and the lateral constraint of the neighboring grains. (Part 1) Nanocrystalline £\-Zr condensates were deposited on the NaCl (100) plane at 25 to 450 ¢J by radio frequency ion beam sputtering from a pure 99.9¢H Zr disk. The nano condensates were identified by transmission electron microscopy to be quasiamorphous, £\-Zr, £\-Zr+ZrO and £\-Zr+ZrO+c-ZrO2 phase assemblages with increasing substrate temperature. At 400 ¢J and under 1-20 sccm oxygen, c- and t-ZrO2 nanocondensates were assembled on NaCl (100) as monolayer nanocrystalline material and showed strong preferred orientation. The c- and/or t-ZrO2 were retained by small grain size, low-valence Zr cation and 2-D matrix constraint of the film. (Part 2) Nanosized c- and t-ZrO2 were formed as monolayer nanocrystalline film on NaCl (100) plane by radio frequency ion beam sputtering. The microstructure and the epitaxy relationship with the NaCl (100) plane were studied by a high resolution transmission electron microscope. The epitaxy orientation was found to be [001]Z//[001]N, [100]Z//[1 0]N (group A), and [011]Z//[001]N, [100]Z//[100]N (group B) between zirconia (Z) and NaCl (N). Group B has two variants and is the dominant type. The possible causes for the epitaxy relationship are discussed. Crystallites within the same group can merge by rotation and coalesce into a single crystal, whereas crystallites in different groups can form high-angle grain boundaries. (Part 3) Special interfaces were formed for the c- and/or t-ZrO2 (Z) nano-crystals when deposited on the NaCl (N) (100) cleavage plane by ion beam sputtering to follow the epitaxy relationships of [001]Z//[001]N, (100)Z//(1 0)N (group A); and [011]Z//[001]N, (100)Z//(100)N (group B1) or (100)Z//(010)N (group B2). The nanoparticles in group A and B were impinged and coalesced to form {220}A/{200}B and {200}A/{111}B interfaces; with anchored dislocation whereas those in group B1 and B2 form {220}B1/{200}B2 interface. The {220}A/{200}B interface is found to be of especially low energy due to good match O2¡V lattice sites, and smoothly joints {200} and {220} planes across the interfaces without mismatch strain and dislocations. The special interfaces may shed light on the epitaxial mechanism of nanocrystalline materials in general. (Part 4)