Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references (leaves 82-84). Also available in electronic version. Access restricted to campus users.

published_or_final_version / Electrical and Electronic Engineering / Master / Master of Philosophy

abstract / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy

Thesis (M.Eng.Sc.)--University of Adelaide, Dept. of Electrical and Electronic Engineering, 1999. / Bibliography: leaves 133-134.

Thesis (Ph. D.) University of Missouri-Columbia, 2006. / The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on August 3, 2007) Includes bibliographical references.

Bibliography: leaves 156-165. / xvi, 174 leaves : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical. / Thesis (M.Eng.Sc.)--University of Adelaide, Dept. of Electrical & Electronic Engineering, 1996?

Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2007. / Includes bibliographical references (leaves 155-168). Also available in electronic version.

The current temperature operating range of semiconducting materials is given to be between -10°C and 105°C. Current plans are to increase this range due to an industry demand for semiconducting materials able to operate outside these bounds. Wide bandgap semiconductor materials have been researched for some time in an effort to manufacture commercially viable controlled semiconductor switches. Samples of such a controlled switch have been obtained and promises to be close to commercial rollout. This controlled switch takes on the form of a Junction Field Effect Transistor (JFET), which is a depletion mode component. Depletion mode switches are normally-on, and have thus far not been used in the power electronics field. Due to difficult switching and availibility of component which are switched more easily, these components were quicklier and easierly adopted for use. The Silicon Carbide JFET promises to circumvent these cons with the ability to block higher voltages, at higher temperatures and at higher speeds. Lower on resistance and smaller size of substrates are other benefits that the use of Silicon Carbide semiconducting material promises. A variety of properties of the Silicon Carbide JFET are investigated. Some of these properties include the component on-resistance, gate charge, breakthrough voltage of the gate and leakage current of the channel. Switching performance is also investigated as well as the reverse recovery of the body diode. All properties were measured as a function of temperature in an effort to describe the difference in performance at high temperatures. / Prof. Ivan Hofsajer

An efficient numerical method to simulate a subpicosecond semiconductor optical switch is developed in this research. The problem under studying involves both electromagnetic wave propagation and semiconductor dynamic transport, which is a nonlinear phenomenon. Finite difference time domain (FDTD) technique is used to approximate the time dependent Maxwell's equations for full-wave analysis of the wave propagation. The dynamic transport is handled by solving the balance equations using the energy and momentum relaxation time approximation. Based on the structure of the device, a physical semi-analytical model is also developed for preliminary analysis. Simulation results in the device's subpicosecond responses including nonlinearity and overshoot. The validity of the method is verified by comparing the simulation with the published experimental results. The method can be extended to other devices as well. / Ph. D.

Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2006. / John Papapolymerou, Committee Chair ; Joy Laskar, Committee Member ; John Cressler, Committee Member ; Alan Doolittle, Committee Member ; Clifford Henderson, Committee Member.