published_or_final_version / abstract / Physics / Doctoral / Doctor of Philosophy

by Kwok-fung Kan = 低能量氬離子濺射於表面淸潔及高解像深度剖析時所產生的損傷及離子混合的硏究 / 簡國豐. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2000. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Kwok-fung Kan = Di neng liang ya li zi jian she yu biao mian qing jie ji gao jie xiang shen du pou xi shi suo chan sheng de sun shang ji li zi hun he de yan jiu / Jian Guofeng. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgement --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter Chapter 1 --- Background and Goals of the Thesis Work --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.1.1 --- Surface contamination of semiconductors --- p.1 / Chapter 1.1.2 --- Common surface cleaning methods --- p.2 / Chapter 1.1.3 --- Quality control in ultrathin gate dielectrics --- p.3 / Chapter 1.1.4 --- High-resolution depth profiling --- p.5 / Chapter 1.2 --- Energy range limitation in sputtering --- p.5 / Chapter 1.3 --- Goals of this thesis study --- p.6 / References for Chapter1 --- p.7 / Chapter Chapter 2 --- Theoretical Background and Instrumentation --- p.9 / Chapter 2.1 --- Ion Bombardment --- p.9 / Chapter 2.1.1 --- Bombardment mechanism --- p.9 / Chapter 2.1.2 --- Ion beam induced damage --- p.10 / Chapter 2.1.2.1 --- Region of damage --- p.10 / Chapter 2.1.2.2 --- Structural changes --- p.11 / Chapter 2.1.3 --- Assessment methods on ion beam damage and ion mixing --- p.12 / Chapter 2.1.3.1 --- Assessment methods on ion beam damage --- p.12 / Chapter 2.1.3.2 --- Assessment of ion mixing in the sample --- p.13 / Chapter 2.1.4 --- Minimizing the sputtered damage and ion mixing --- p.14 / Chapter 2.1.5 --- Ion gun --- p.15 / Chapter 2.1.5.1 --- Mechanism of the generation of an argon ion beam --- p.15 / Chapter 2.1.5.2 --- Description of ion gun --- p.16 / Chapter 2.1.5.3 --- Calibration of current density provided by the ion gun --- p.16 / Chapter 2.1.5.4 --- Sputtering time --- p.16 / Chapter 2.2 --- X-ray photoelectron spectroscopy(XPS) --- p.18 / Chapter 2.2.1 --- Principle of XPS --- p.18 / Chapter 2.2.1.1 --- Qualitative analysis of XPS --- p.18 / Chapter 2.2.1.2 --- Quantitative analysis of XPS --- p.20 / Chapter 2.2.2 --- Angle-resolved XPS --- p.24 / Chapter 2.2.3 --- Set-up --- p.25 / Chapter 2.2.3.1 --- UHV system --- p.27 / Chapter 2.2.3.2 --- X-ray source --- p.27 / Chapter 2.2.3.3 --- Electron energy analyser --- p.27 / Chapter 2.2.3.4 --- Detector --- p.28 / Chapter 2.2.4 --- Calibration of XPS --- p.28 / References for Chapter2 --- p.29 / Chapter Chapter 3 --- Damages induced by ion sputtering --- p.31 / Chapter 3.1 --- Introduction --- p.31 / Chapter 3.2 --- Experimental --- p.31 / Chapter 3.2.1 --- Sample preparation --- p.31 / Chapter a. --- Surface cleaning and oxidization --- p.31 / Chapter b. --- HF etching --- p.32 / Chapter c. --- Indium back contact --- p.32 / Chapter 3.2.2 --- XPS analysis --- p.33 / Chapter 3.2.2.1 --- Data acquisition --- p.33 / Chapter 3.2.2.2 --- Peak deconvolution --- p.33 / Chapter 3.2.3 --- Ion sputtering --- p.34 / Chapter 3.3 --- Results and discussion --- p.34 / Chapter 3.3.1 --- Spectral width of In3d and P2p peak --- p.34 / Chapter 3.3.2 --- Deconvolution of In3d signal at take-off angle of 90° --- p.37 / Chapter 3.3.2.1 --- In in bulk InP --- p.37 / Chapter 3.3.2.2 --- In metal --- p.37 / Chapter 3.3.2.3 --- In in damaged InP region --- p.37 / Chapter 3.3.3 --- Deconvolution of P2p signal at take off angle of 45° --- p.37 / Chapter 3.3.3.1 --- P in bulk InP --- p.37 / Chapter 3.3.3.2 --- P in damaged InP region --- p.37 / Chapter 3.3.4 --- Relative composition of deconvoluted components --- p.38 / Chapter 3.3.5 --- Fermi level shift --- p.39 / Chapter 3.3.6 --- Analysis at take-off angle of 45° --- p.40 / Chapter 3.3.7 --- Stoichiometry in sputtered InP --- p.43 / Chapter 3.4 --- Conclusions --- p.45 / References for Chapter3 --- p.46 / Chapter Chapter 4 --- Ion mixing in sputtered depth profiling --- p.47 / Chapter 4.1 --- Introduction --- p.47 / Chapter 4.2 --- Experimental --- p.47 / Chapter 4.2.1 --- Sample description --- p.47 / Chapter 4.2.2 --- Acquisition conditions --- p.47 / Chapter 4.2.3 --- Raw data --- p.48 / Chapter 4.2.4 --- Data treatments --- p.48 / Chapter 4.2.4.1 --- Depth calibration --- p.48 / Chapter 4.2.4.2 --- Calibration procedure --- p.55 / Chapter A. --- Overlayer region --- p.55 / Chapter B. --- Substrate region --- p.56 / Chapter 4.3 --- Results and discussions --- p.57 / Chapter 4.3.1 --- Study of ion mixing using depth profile --- p.57 / Chapter A. --- Comparing the carbon profiles at two ion sputtering energies --- p.59 / Chapter B. --- Comparing the nitrogen profiles at two ion sputtering energies --- p.59 / Chapter C. --- Comparing the oxygen profiles at two ion sputtering energies --- p.59 / Chapter 4.3.2 --- Study of ion mixing from a change in sputtering rate --- p.60 / Chapter 4.3.3 --- Approximation on ion mixing --- p.64 / Chapter 4.3.4 --- Conclusions --- p.66 / References for Chapter4 --- p.67 / Chapter Chapter 5 --- Conclusions --- p.68

No description available.

The concentration of tin and palladium in catalysts used in electroless copper plating have been determined by Rutherford backscattering spectrometry with high energy (2-5) MeV ⁴He⁺. The tin:palladium ratio in the catalyst decreases when exposed to an alkaline solution. X-ray photoelectron spectroscopy has confirmed this result and has shown the palladium in the catalyst is present as palladium metal and the tin is present, probably as an oxidized species, to a depth of about 30 Å. Catalysts for the electroless plating of copper are obtained by the reaction of Pd(II) and Sn(II). The extent of the reaction and the concentrations of the reaction products depend on the solution conditions. Conflicting results obtained in previous investigations of tin-palladium catalysts can be explained on this basis. Single crystals of gallium arsenide (GaAs(100)) were found to dissolve in synthetic lung fluid (Gamble solution). The concentrations of arsenic and gallium in the Gamble solution as well as the arsenic:gallium ratio on the GaAs surface increased continuously as the time of exposure to the Gamble solution increased. X-ray photoelectron spectroscopic studies of the gallium arsenide surface showed that arsenic migrated to the surface and it was oxidized to a species resembling As₂O₃ and finally solubilized by the Gamble solution. The solubility of gallium was governed primarily by the formation of stable complexes with the citrate and phosphate ions in the Gamble solution. Zinc that was present in the single crystals of gallium arsenide also migrated to the surface.

Thesis (Ph.D.)--Chinese University of Hong Kong ,2001. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese.

by Raymon, Wai-man Chan. / "March 1999." / Thesis (Ph.D.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. / Mode of access: World Wide Web. / Abstracts in English and Chinese. / by Raymon, Wai-man Chan.

No description available.

by So King Lung, Benny. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves 102-109). / ABSTRACT --- p.v / ACKNOWLEDGEMENTS --- p.vii / LIST OF FIGURES --- p.viii / LIST OF TABLES --- p.xiii / Chapter Chapter 1 --- Background of the study --- p.1 / Chapter 1.1 --- Introduction --- p.1 / Chapter 1.2 --- Surface passivation techniques --- p.3 / Chapter 1.2.1 --- Sulfide solution passivation --- p.3 / Chapter 1.2.2 --- Gas-phase sulfide passivation --- p.4 / Chapter 1.3 --- Surface structure of sulfide-passivated surface --- p.5 / Chapter 1.4 --- Objectives of the present study --- p.7 / Chapter Chapter 2 --- Instrumentation --- p.9 / Chapter 2.1 --- Introduction --- p.9 / Chapter 2.2 --- X-ray photoelectron spectroscopy (XPS) --- p.9 / Chapter 2.2.1 --- The development of XPS --- p.9 / Chapter 2.2.2 --- Basic principle of XPS --- p.9 / Chapter 2.2.3 --- Quantitative analysis of XPS --- p.14 / Chapter 2.2.3.1 --- Atomic concentration of a homogenous material --- p.14 / Chapter 2.2.3.2 --- Layer structure --- p.15 / Chapter 2.2.3.3 --- Simulation of XPS atomic concentration ratios from proposed surface structural models --- p.17 / Chapter 2.2.4 --- XPS experiment --- p.19 / Chapter 2.3 --- Low energy electron diffraction (LEED) --- p.21 / Chapter 2.3.1 --- The development of LEED --- p.21 / Chapter 2.3.2 --- Basic principle of LEED --- p.23 / Chapter 2.3.3 --- LEED experiment --- p.28 / Chapter 2.3.3.1 --- The ultra high vacuum chamber (UHV) --- p.28 / Chapter 2.3.3.2 --- The electron gun --- p.28 / Chapter 2.3.3.3 --- The sample --- p.30 / Chapter 2.3.3.4 --- The detector system --- p.30 / Chapter Chapter 3 --- Surface treatments --- p.31 / Chapter 3.1 --- Semiconductor wafers --- p.31 / Chapter 3.2 --- Cleaning procedure --- p.31 / Chapter 3.3 --- Polysulfide passivation --- p.33 / Chapter Chapter 4 --- Gas-phase polysulfide passivation of the InP(100) surface --- p.37 / Chapter 4.1 --- Introduction --- p.37 / Chapter 4.2 --- Sulfide-assisted reordering at the InP(100) surface --- p.38 / Chapter 4.2.1 --- Gas-phase polysulfide-treated InP( 100) surface --- p.38 / Chapter 4.2.2 --- Further annealing of the gas-phase polysulfide-treated surface --- p.47 / Chapter 4.2.3 --- Comparison with the UV/O3-HF treatment --- p.48 / Chapter 4.2.4 --- Sulfide at the interface of SiNx/InP --- p.49 / Chapter 4.3 --- Conclusions --- p.53 / Chapter Chapter 5 --- Gas-phase polysulfide passivation of the GaAs(lOO) surface --- p.55 / Chapter 5.1 --- Introduction --- p.55 / Chapter 5.2 --- Gas-phase poly sulfide-passivated GaAs( 100) surface --- p.56 / Chapter 5.2.1 --- Surface structure of the as-treated surface --- p.56 / Chapter 5.2.2 --- Surface structure after further annealing --- p.64 / Chapter 5.2.3 --- Mechanism of the gas-phase polysulfide passivation --- p.67 / Chapter 5.3 --- Conclusions --- p.68 / Chapter Chapter 6 --- Gas-phase polysulfide passivation of the GaAs(100) surface --- p.69 / Chapter 6.1 --- Introduction --- p.69 / Chapter 6.2 --- Reordering at the gas-phase polysulfide-passivated GaAs(100) surface --- p.70 / Chapter 6.2.1 --- Adsorption of polysulfide on the GaAs(100) surface --- p.70 / Chapter 6.2.2 --- Ordered sulfide at the GaAs(l 10) surface --- p.73 / Chapter 6.2.3 --- Further analysis of the LEED pattern --- p.80 / Chapter 6.3 --- Conclusions --- p.83 / Chapter Chapter 7 --- Sulfide Solution passivation of the GaAs(100) surface --- p.84 / Chapter 7.1 --- Introduction --- p.84 / Chapter 7.2 --- Sulfide solution passivation on the GaAs(l 10) surface --- p.85 / Chapter 7.2.1 --- Etching of sulfide solution on the GaAs(l 10) surface --- p.85 / Chapter 7.2.2 --- Annealing of sulfide solution-passivated GaAs( 110) surface --- p.88 / Chapter 7.2.3 --- Further analysis of the LEED pattern --- p.92 / Chapter 7.2.4 --- Shift of XPS peak position during annealing --- p.95 / Chapter 7.3 --- Conclusions --- p.97 / Chapter Chapter 8 --- Conclusions and further work --- p.99 / Chapter 8.1 --- Conclusions --- p.99 / Chapter 8.2 --- Further work --- p.100 / References --- p.102

No description available.

No description available.