LiCoO₂thin films have been grown by pulsed laser deposition on stainless steel and SiO₂/Si substrates. The film deposited at 600°C in an oxygen partial pressure of 100mTorr shows an excellent crystallinity, stoichiometry and no impurity phase present. Microstructure and surface morphology of thin films were examined using a scanning electron microscope. The electrochemical properties of the thin films were studied with cyclic voltammetry and galvanostatic charge-discharge techniques in the potential range 3.0-4.2 V. The initial discharge capacity of the LiCoO2 thin films deposited on the stainless steel and SiO₂/Si substrates reached 23 and 27 µAh/cm², respectively. / Singapore-MIT Alliance (SMA)

In this study, barium strontium titanate (BST) thin films with different compositions (Ba0.9Sr0.1TiO3, Ba0.8Sr0.2TiO3, Ba0.7Sr0.3TiO3, Ba0.5Sr0.5TiO3) were produced by chemical solution deposition technique. BST solutions were prepared by dissolving barium acetate, strontium acetate and titanium isopropoxide in acetic acid and adding ethylene glycol as a chelating agent and stabilizer to this solution, at molar ratio of acetic acid/ethylene glycol, 3:1. The solution was then coated on Si and Pt//Ti/SiO2/Si substrates at 4000 rpm for 30 seconds. Crack-free films were obtained up to 600 nm thickness after 3 coating &amp / #8211 / pyrolysis cycles by using 0.4M solutions. Crystal structure of the films was determined by x-ray diffraction while morphological properties of the surface and the film-substrate interface was examined by scanning electron microscope (SEM). Dielectric constant, dielectric loss and ferroelectric parameters of the films were measured. Sintering temperature, film composition and the thickness of the films were changed in order to observe the effect of these parameters on the measured electrical properties. The dielectric constant of the films was decreased slightly in 1kHz-1 MHz range. It was seen that dielectric constant and loss of the films was comparable to chemical solution deposition derived films on literature. Maximum dielectric constant was obtained for the Ba0.7Sr0.3TiO3 composition at a sintering temperature of 800&amp / #730 / C for duration of 3 hours. Dielectric constant increased whereas dielectric loss decreased with increasing film thickness. BST films have composition dependent Curie temperature. For Ba content greater than 70 %, the material is in ferroelectric state. However, fine grain size of the films associated with chemical solution deposition and Sr doping causes the suppression of ferroelectric behaviour in BST films. Therefore, only for Ba0.9Sr0.1TiO3 composition, slim hysteresis loops with very low remanent polarization values were obtained.

ABSTRACT PREPARATION OF PLZT THIN FILMS BY CHEMICAL SOLUTION DEPOSITION AND THEIR CHARACTERIZATION Kaplan, Burkan M.S., Department of Metallurgical and Materials Engineering Supervisor: Prof. Dr. Macit &Ouml / zenbaS November 2005, 125 pages In this study, La3+ was substituted into lead zirconate titanate (PZT) system by Pb1-xLax(ZryTi1-y)1-x/4O3 nominal stochiometry and it was processed via chemical solution deposition on (111)-Pt/Ti/SiO2/Si-(100) substrate.PLZT solutions were prepared by mixing two solutions, one of which was obtained by dissolving lead acetate and lanthanum acetate hydrate in 2 methoxyethanol at high temperature. This solution was then mixed with the second solution containing zirconium propoxide and titanium isopropoxide. 40ml/0.4M solution was prepared and spin coated on Pt/Ti/SiO2/Si substrates at 3000 rpm for 30 seconds. After 4 coating cycles, film thickness was reached to 600 nm. A systematic study was carried out in different regions of PLZT phase diagram tetragonal, rhombohedral and on the morphotropic phase boundry (MPB) to obtain optimized results of ferroelectric, dielectric and optical properties of the material. During the period of the work, effect of parameters on these properties such as heat treatment conditions, chemical composition of the film, microstructure and thickness of the film was investigated. The films were characterized structurally and electrically. For structural properties, X-ray diffraction technique (XRD), energy dispersive spectrometry (EDS) and Scanning Electron Microscope (SEM) were used to observe phases and surface characterization. For electrical measurements, ferroelectric tester was used to obtain dielectric constant, loss tangent and hysteresis curves. Optical transmittance of the films was also investigated by UV-VIS Spectrophotometer and optical film constants were calculated by modified envelope method. It was observed that the optimum heat treatment conditions were achieved at 7500C for 3 hours. The highest ferroelectric and dielectric properties such as remanent polarization and dielectric constant were obtained using that temperature. The dielectric constant of the films was measured in the frequency range of 1kHz-1MHz and remained almost constant in this region. The change of dielectric constant and ferroelectric hysteresis loops were obtained as a function of Zr/Ti ratio and La content. The grain size as a function of sintering temperature and La content was investigated. It was seen that as the sintering temperature was increased, the grain size of the films increased. The same tendency was also observed when the La content was increased. Fatigue behavior of PLZT thin films was also investigated by Radiant Ferroelectric Tester at 50 kHz and &plusmn / 15V. Change of remanent polarization (Pr) as a function of cumulative switching cycles (N) was drawn with the log scale of x-axis. Furthermore, leakage current characteristics of the films were also obtained by the ferroelectric tester at &amp / #61617 / 15V. It has been observed that as the La content of the film was increased, leakage current of the PLZT films decreased. Keywords: PLZT, (111)-Pt/Ti/SiO2/Si-(100) substrate, Chemical Solution Deposition.

L'apparition des dernières applications de l'internet à haut débit engendre une augmentation importante des échanges d'informations à travers le monde. Pour éviter une saturation inexorable du réseau de télécommunications, les liaisons par fibre optique avec multiplexage en longueur d'onde (DWDM) se généralisent pour permettre la transmission de données avec un débit actuel maximum de 1Tbit/s. L'aiguillage en longueur d'onde des signaux entre les différentes boucles de ce type de réseau est réalisé à l'aide de Multiplexeurs Insertion- Extraction (MIE). Ce mémoire est consacré à l'étude et à la réalisation de deux MIE réalisés par photoinscription de réseaux de Bragg (=filtres sélectifs en longueur d'onde photoinscrits par un champ d'interférence de lumière laser UV) dans des guides optiques à coeur dopé en germanium. Le premier MIE étudié lors de cette thèse est réalisé sur la base d'un coupleur directif en optique intégrée SiO2/Si dans la zone de couplage duquel deux réseaux de Bragg ont été photoinscrits. Le travail a consisté à améliorer à la fois la fabrication des guides optiques (diminution de leur biréfringence) ainsi que leur photoinscription (meilleure apodisation de la réponse spectrale du spectre réfléchi). La conception et la réalisation de premiers prototypes permettant l'extraction de canaux espacés de 200 GHz ont alors pu être effectuées. La deuxième étude se concentre, quant à elle, sur l'optimisation d'un MIE plus mature basé sur un interféromètre de Mach-Zehnder à réseaux de Bragg réalisé en fibre bicoeur. L'influence néfaste du déphasage engendré par les réseaux de Bragg sur la réponse spectrale de l'interféromètre a été discutée et minimisée. La reconstruction de la dispersion chromatique de ces réseaux via la réponse spectrale de l'interféromètre a aussi été étudiée. Des composants industrialisables pour réseaux d'espacements intercanaux de 100 GHz et 50 GHz ont alors pu être réalisés.