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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Electrical characterization of Si-SiO2 interface for thin oxides

洪國光, Hung, Kwok-kwong. January 1987 (has links)
published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy
2

Field emission properties of a silicon tip array.

January 2001 (has links)
Fung Yun Ming. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 134-140). / Abstracts in English and Chinese. / Abstract --- p.I / Acknowledgement --- p.III / Contents --- p.IV / List of Figure captions --- p.VIII / List of Table captions --- p.XIII / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Theory and Applications / Chapter 2.1 --- Principle of field emission / Chapter 2.1.1 --- The Fowler-Nordheim Theory --- p.3 / Chapter 2.1.2 --- Field emission from metals --- p.6 / Chapter 2.1.3 --- Field emission from semiconductors --- p.8 / Chapter 2.1.3.1 --- Advantages and limitations of silicon --- p.9 / Chapter 2.1.4 --- Application of the Fowler-Nordheim theory --- p.10 / Chapter 2.1.5 --- Factors influencing field emission efficiency --- p.11 / Chapter 2.2 --- Applications --- p.11 / Chapter 2.2.1 --- Operation of a Field Emission Displays --- p.11 / Chapter 2.2.2 --- Basic structure of a Field Emission Displays --- p.13 / Chapter 2.2.3 --- Parameters relevant to applications --- p.15 / Chapter 2.3 --- The fabrication processes --- p.17 / Chapter 2.3.1 --- The anisotropic wet etching method --- p.18 / Chapter 2.3.2 --- The isotropic wet etching method --- p.19 / Chapter 2.3.3 --- Field emission from coating materials --- p.20 / Chapter 2.3.3.1 --- Coating enhancement --- p.20 / Chapter 2.3.3.2 --- Diamond and diamond-like films --- p.21 / Chapter 2.3.3.3 --- Metallic coatings --- p.22 / Chapter 2.3.3.4 --- Porous silicon coatings --- p.22 / Chapter 2.3.3.5 --- Silicon carbide coatings --- p.22 / Chapter 2.3.4 --- Fabrication of field emitters with gate --- p.23 / Chapter Chapter 3 --- Sample Preparation and Characterization Methods / Chapter 3.1 --- Sample preparation --- p.25 / Chapter 3.2 --- The fabrication process / Chapter 3.2.1 --- Isotropic etching of silicon / Chapter 3.2.1.1 --- The anodization process --- p.25 / Chapter 3.2.1.2 --- Porous silicon formation --- p.26 / Chapter 3.2.2 --- Anistropic etching of silicon --- p.27 / Chapter 3.2.3 --- The sputtering system --- p.28 / Chapter 3.2.4 --- The MEVVA Ion Source Implanter --- p.30 / Chapter 3.3 --- Characterization Methods / Chapter 3.3.1 --- Atomic Force Microscopy (AFM) --- p.32 / Chapter 3.3.2 --- Scanning Electron Microscopy (SEM) --- p.34 / Chapter 3.3.3 --- Field emission measurement / Chapter 3.3.3.1 --- Vacuum requirements --- p.35 / Chapter 3.3.3.2 --- Testing system / Chapter 3.3.3.3 --- Fluctuation of field emission --- p.38 / Chapter Chapter 4 --- Fabrication of Silicon Tips and their field emission charateristics / Chapter 4.1 --- The anodization etching process / Chapter 4.1.1 --- Introduction --- p.40 / Chapter 4.1.2 --- Experimental details --- p.42 / Chapter 4.1.3 --- Results and Discussions / Chapter 4.1.3.1 --- N type (100) sample --- p.45 / Chapter 4.1.3.2 --- Ntype(lll) sample --- p.60 / Chapter 4.1.3.3 --- Fluctuations of the emission current --- p.64 / Chapter 4.1.3.4 --- The effect of Concentration of HF solution on First Step Anodization --- p.68 / Chapter 4.1.3.5 --- The effect of the Concentration of HF solution on Second Step Anodization --- p.70 / Chapter 4.1.3.6 --- Gated silicon field emitter --- p.70 / Chapter 4.1.4 --- Conclusions --- p.73 / Chapter 4.2 --- Anisotropic texturing process / Chapter 4.2.1 --- Introduction --- p.74 / Chapter 4.2.2 --- Experimental details --- p.76 / Chapter 4.2.3 --- Results and Discussions --- p.78 / Chapter 4.2.4 --- Conclusion --- p.92 / Chapter 4.3 --- Formation of Porous Silicon Layer on silicon / Chapter 4.3.1 --- Introduction --- p.93 / Chapter 4.3.2 --- Experimental details --- p.94 / Chapter 4.3.3 --- Results and Discussions --- p.95 / Chapter 4.3.4 --- Conclusion --- p.100 / Chapter 4.4 --- Chapter Summary --- p.101 / Chapter Chapter 5 --- Improvement in the field emission characteristics of the silicon tips upon coating with low work function materials / Chapter 5.1 --- Amorphous carbon coating / Chapter 5.1.1 --- Introduction --- p.102 / Chapter 5.1.2 --- Experimental details --- p.103 / Chapter 5.1.3 --- Results and Discussions --- p.104 / Chapter 5.1.4 --- Conclusion --- p.118 / Chapter 5.2 --- Silicon carbide coated Silicon emitter by MEWA / Chapter 5.2.1 --- Introduction --- p.119 / Chapter 5.2.2 --- Experimental details --- p.120 / Chapter 5.2.3 --- Results and Discussions --- p.121 / Chapter 5.2.4 --- Conclusion --- p.125 / Chapter 5.3 --- Chapter Summary --- p.126 / Chapter Chapter 6 --- Conclusions --- p.127 / Reference --- p.134 / List of publications --- p.140
3

Photoelectric properties of amorphous silicon deposited by the pyrolytic decomposition of silane

Raouf, Nasrat Arif January 1981 (has links)
No description available.
4

Photoconductive studies of zinc-doped n-type silicon.

Krishna, Vijaya January 1970 (has links)
No description available.
5

The structure and electrical properties of silicon thin films on zirconia-tungsten composites

Moh, Kyung Hwa 12 1900 (has links)
No description available.
6

'n Versnellingsensor met groot dinamiese bereik vervaardig in mikrogemasjineerde silikon

Coetzer, Paul Jacobus 10 April 2014 (has links)
M.Ing. / Measurement of acceleration is of importance for several applications such as impact tests and navigation. The design and manufacture of a symmetrical piezoresistive accelerometer, which can measure accelerations up to 60 000 g, are presented in this work. Various accelerometers are discussed and compared. The design of an accelerometer is an interdisciplinary activity which requires knowledge of the mechanical and electronic properties of materials as well as electronic signal processing. Computer design aids such as finite element analysis and semiconductor process modelling are used in this work to optimize first order designs. Since accelerometers with large dynamic range must be small in size in order to cause the minimum disturbance of the measurand, micromachining of silicon is used to manufacture extremely small devices. A substantial part of this work deals with the different materials and methods used in the manufacturing process. Since there is an inevitable spread in the parameters of the accelerometers, each one requires calibration. A test facility was developed to test and calibrate accelerometers up to 20 000 g. Because shock impulse response is determined by the test facility, a Fourier-transform is used to compute the frequency response of the accelerometer. The result of this work is the development and manufacture of an accelerometer with a mass of approximately 1 mg. The extremely small size and mass makes it very useful for measuring high accelerations.
7

Invloed van substraattemperatuur en uitgloeiing op die elektriese en optiese eienskappe van amorfe silikon

Prinsloo, John James Richard 11 June 2014 (has links)
M.Sc. (Physics) / Please refer to full text to view abstract
8

Photoconductive studies of zinc-doped n-type silicon.

Krishna, Vijaya January 1970 (has links)
No description available.
9

OPTICAL AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON PREPARED BY CHEMICAL VAPOR DEPOSITION AND PLASMA HYDROGENATION.

Scheidegger, Gary Louis. January 1983 (has links)
No description available.
10

Architectures and Integrated Circuits for Efficient, High-power "Digital'' Transmitters for Millimeter-wave Applications

Chakrabarti, Anandaroop January 2016 (has links)
This thesis presents architectures and integrated circuits for the implementation of energy-efficient, high-power "digital'' transmitters to realize high-speed long-haul links at millimeter-wave frequencies in nano-scale silicon-based processes.

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