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by Yun-hung Ng. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references. / Text in English; abstracts in English and Chinese. / by Yun-hung Ng. / Abstract --- p.ii / 論文摘要 --- p.iii / Acknowledgements --- p.iv / Table of Contents --- p.v / List of Figures --- p.ix / List of Tables --- p.xi / Chapter Chapter 1 --- INTRODUCTION --- p.1 / Chapter 1.1 --- Background of Study --- p.1 / Chapter 1.2 --- General Properties of a-SiNx and a-SiOxNy --- p.1 / Chapter 1.3 --- Common Preparation Methods of a-SiNx and a-SiOxNy --- p.2 / Chapter 1.4 --- Applications of a-SiNx in Microelectronics --- p.4 / Chapter 1.5 --- Applications of a-SiOxNy in Microelectronics --- p.6 / References --- p.8 / Chapter Chapter 2 --- METHODOLOGY --- p.10 / Chapter 2.1 --- Introduction --- p.10 / Chapter 2.2 --- Mott Rule --- p.10 / Chapter 2.3 --- Random Mixture Model --- p.11 / Chapter 2.4 --- Random Bonding Model --- p.12 / Chapter 2.5 --- Hasegawa Model --- p.15 / References --- p.20 / Chapter Chapter 3 --- INSTRUMENTATION --- p.21 / Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.21 / Chapter 3.1.1 --- Fundamental Theory of XPS --- p.21 / Chapter 3.1.2 --- Qualitative Analysis using XPS --- p.25 / Chapter 3.1.2.1 --- Chemical Shift --- p.25 / Chapter 3.1.2.2 --- Angular Effect on XPS --- p.28 / Chapter 3.1.2.3 --- Valence Band Investigation --- p.28 / Chapter 3.1.3 --- Quantitative Analysis using XPS --- p.30 / Chapter 3.1.4 --- Instrumental Setup of XPS --- p.33 / Chapter 3.2 --- Ultraviolet Photoelectron Spectroscopy --- p.37 / Chapter 3.2.1 --- Basic Theory of UPS --- p.37 / Chapter 3.2.2 --- Instrumentation --- p.38 / References --- p.41 / Chapter Chapter 4 --- SHORT RANGE ORDER OF a-SiNx --- p.42 / Chapter 4.1 --- Sample Preparation --- p.42 / Chapter 4.2 --- XPS Analysis of a-SiNx --- p.43 / Chapter 4.2.1 --- Angle Resolved XPS Analysis --- p.43 / Chapter 4.2.2 --- RB Model and RM Model Simulation of a-SiNx --- p.43 / Chapter 4.2.3 --- Intermediate Mixture (IM) Model --- p.50 / Chapter 4.2.4 --- Valence Band Structure of a-SiNx --- p.51 / Chapter 4.3 --- Raman Measurements --- p.54 / Chapter 4.4 --- Photoluminescence of a-SiNx --- p.54 / Chapter 4.5 --- Large Scale Potential Fluctuations in a-SiNx --- p.56 / Chapter 4.6 --- Conclusion --- p.61 / References --- p.62 / Chapter Chapter 5 --- MOTT RULE VERIFICATION OF a-SiOxNy --- p.65 / Chapter 5.1 --- Sample Preparation --- p.65 / Chapter 5.2 --- Validity of Mott Rule on a-SiOxNy --- p.66 / Chapter 5.3 --- Conclusion --- p.73 / References --- p.74 / Chapter Chapter 6 --- SHORT RANGE ORDER OF a-SiOxNy --- p.75 / Chapter 6.1 --- Angle Resolved XPS Analysis --- p.75 / Chapter 6.2 --- Random Bonding Model Simulation of a-SiOxNy --- p.75 / Chapter 6.3 --- Conclusion --- p.79 / References --- p.82 / Chapter Chapter 7 --- CONCLUSIONS --- p.83

Graduation date: 1995

Silicon and silicon nitride thin films were growth on Si and glass substrates at room temperature by ratio-frequency (r-f) magnetron sputtering. The electrical characteristics of the silicon nitride films were characterized using I-V and C-V measurement under different growth condition, including r-f power, nitrogen partial pressure, and hydrogen partial pressure. Minimum current leakages for MIS structure as low as 2¡Ñ10 A/cm were obtained at 1 MV/cm electrical field with hysteresis voltage about 2V. The root-mean square surface roughness of the silicon nitride film is less then 1nm. In addition, silicon nitride capacitors with indium-tin-oxide as electrodes were fabricated. Silicon thin films prepared by R.F. magnetron sputtering at room temperature are amorphous. The measurements on the variation of the photo-conductivity were used to characterize the characteristics of the Si film.

In this study, the characteristics of low-pressure chemical vapor deposition deposited silicon nitride films on n-GaN substrate were investigated. The physical and chemical properties were measured and surveyed. And an Al/LPCVD-Si3N4/n-GaN MOS structure was used for the electrical characterizations. For the electrical property improvements, we investigated the low-pressure chemical vapor deposition deposited silicon nitride films by (NH4)2Sx treatment. Furthermore, the silicon nitride films were passivated by fluorine ions to improve the electrical characterizations that came from the liquid phase deposited SiO2 stacks. After the (NH4)2Sx treatment and fluorine ions passivation, the dielectric constant of low-pressure chemical vapor deposition deposited silicon nitride films were maintained and the leakage current density were improved. The highest dielectric constant is 12.13, and lowest leakage current density are 1.73¡Ñ10-10 A/cm2 at 1 MV/cm and 3.81¡Ñ10-10 A/cm2 at 1 MV/cm for the LPCVD-Si3N4 film after fluorine passivation and (NH4)2Sx treatment.

Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004. / Includes bibliographical references. Also available in electronic version. Access restricted to campus users.

Thesis (Ph. D.)--Rutgers University, 2008. / "Graduate Program in Ceramic and Materials Science and Engineering." Includes bibliographical references (p. 213-218).

Thesis (M.S.)--West Virginia University, 2006. / Title from document title page. Document formatted into pages; contains vii, 30 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 28-30).

Philosophiae Doctor - PhD / Nanocrystalline silicon (nc-Si:H) is an interesting type of silicon with superior electrical properties that are more stable compared to amorphous silicon (a-Si:H). Silicon nitride (SiNₓ) thin films are currently the dielectric widely applied in the microelectronics industry and are also effective antireflective and passivating layers for multicrystalline silicon solar cells. Research into the synthesis and characterization of nc-Si:H and SiNₓ thin films is vital from a renewable energy aspect. In this thesis we investigated the film growth mechanisms and the filament stability during the hot-wire chemical vapour deposition (HWCVD) of nc-Si:H and SiNₓ thin films. During the HWCVD of nc-Si:H, electron backscatter diffraction (EBSD) revealed that the tantalum (Ta) filament aged to consists of a recrystallized Ta-core with Ta-rich silicides at the hotter centre regions and Si-rich Ta-silicides at the cooler ends nearer to the electrical contacts. The growth of nc-Si:H by HWCVD is controlled by surface reactions before and beyond the transition from a-Si:H to nc-Si:H. During the transition, the diffusion of hydrogen (H) within the film is proposed to be the reaction controlling step. The deposition pressure influenced the structural, mechanical and optical properties of nc-Si:H films mostly when the film thickness is below 250 nm. The film stress, optical band gap, refractive index and crystalline volume fraction approached similar values at longer deposition times irrespective of the deposition pressure. Filament degradation occurred during the HWCVD of SiNₓ thin films from low total flow rate SiH₄ / ammonia (NH₃) / H₂ gas mixture. Similar to the HWCVD of nc-Si:H, the Ta-core recrystallized and silicides formed around the perimeter. However, Tanitrides formed within the filament bulk. The extent of nitride and silicide formation, porosity and cracks were all enhanced at the hotter centre regions, where filament failure eventually occurred. We also applied HWCVD to deposit transparent, low reflective and hydrogen containing SiNₓ thin films at total gas flow rates less than 31 sccm with NH₃ flow rates as low as 3 sccm. Fluctuations within the SiNₓ thin film growth rates were attributed to the depletion of growth species (Si, N, and H) from the ambient and their incorporation within the filament during its degradation.

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