Ternary indium aluminum nitride (InXAl1-XN) semiconductor is an attractive material with a wide-range bandgap energy varied from ultraviolet (Eg(AlN): 6.2 eV) to near infrared (Eg(InN): 0.7 eV). With tuning composition, it can be widely used to many optoelectronic device applications. In this thesis, I have studied InXAl1-XN film deposited on Si (111) substrate using natural and isotopically enriched nitrogen as reactive gas by reactive magnetron sputter epitaxy (MSE). Four series of experiments were performed, which are I. InAlN presputtering, II. InAlN sputter deposition, III. InAlN direct deposition, and IV. InAlN direct deposition using isotopically enriched nitrogen. The samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). The θ-2θ XRD scan confirms that the designed composition x = 0.17 of InXAl1-XN film was obtained. TEM images shows that an amorphous interlayer with a thickness ranging from 1.2 nm to 1.5 nm was formed between Si substrate and InXAl1-XN film. However, high-resolution TEM shows that the interlayer actually contains partial crystalline structures. EDX line profile indicates that the chemical composition of the amorphous interlayer is silicon nitride (SiNX). By comparing d-spacing measurement of partial crystalline structures with EDX line profile, it reveals that partial SiNX crystal is formed in the interlayer. Nonetheless, the samples (IAD01, IAD02, IAD03, IAD04), grown without presputtering procedure, contain both crystalline SiNX and InXAl1-XN embedded in the amorphous interlayer. It means that SiNX and InXAl1-XN film can be directly grown on the substrate in the beginning of deposition. Moreover, the samples (IAD01, IAD03), quenched directly after deposition, have less crystalline structures in the interlayer then the samples (IAD02, IAD04), maintained at 800℃ for 20 min.

<p>Spark Plasma Sintering (SPS) is a promising rapid consolidation technique that allows a better understanding and manipulating of sintering kinetics and therefore makes it possible to obtain Si₃N₄-based ceramics with tailored microstructures, consisting of grains with either equiaxed or elongated morphology.</p><p> The presence of an extra liquid phase is necessary for forming tough interlocking microstructures in Yb/Y-stabilised α-sialon by HP. The liquid is introduced by a new method, namely by increasing the O/N ratio in the general formula RE_xSi_12-(3x+n)Al_3x+nO_nN_16-n while keeping the cation ratios of RE, Si and Al constant. </p><p>Monophasic α-sialon ceramics with tailored microstructures, consisting of either fine equiaxed or elongated grains, have been obtained by using SPS, whether or not such an extra liquid phase is involved. The three processes, namely densification, phase transformation and grain growth, which usually occur simultaneously during conventional HP consolidation of Si₃N₄-based ceramics, have been precisely followed and separately investigated in the SPS process.</p><p>The enhanced densification is attributed to the non-equilibrium nature of the liquid phase formed during heating. The dominating mechanism during densification is the enhanced grain boundary sliding accompanied by diffusion- and/or reaction-controlled processes. The rapid grain growth is ascribed to a <i>dynamic ripening</i> mechanism based on the formation of a liquid phase that is grossly out of equilibrium, which in turn generates an extra chemical driving force for mass transfer. Monophasic α-sialon ceramics with interlocking microstructures exhibit improved damage tolerance. Y/Yb- stabilised monophasic α-sialon ceramics containing approximately 3 vol% liquid with refined interlocking microstructures have excellent thermal-shock resistance, comparable to the best β-sialon ceramics with 20 vol% additional liquid phase prepared by HP. </p><p>The obtained sialon ceramics with fine-grained microstructure show formidably improved <i>superplasticity</i> in the presence of an electric field. The compressive strain rate reaches the order of 10^-2 s^-1 at temperatures above 1500oC, that is, two orders of magnitude higher than that has been realised so far by any other conventional approaches. The high deformation rate recorded in this work opens up possibilities for making ceramic components with complex shapes through super-plastic forming. </p>

Dans le cadre d'exigences environnementales toujours plus strictes, l'allègement des véhicules automobiles, à un coût maitrisé, est aujourd'hui un objectif fondamental des constructeurs. Jusqu'à aujourd'hui, l'effort d'innovation consenti par les sidérurgistes a permis à l'acier de conserver sa position dominante sur les alliages légers. Néanmoins, les performances des nuances actuelles au carbone montrent une évolution asymptotique. La métallurgie des aciers à l'azote constitue d'ores et déjà une solution disruptive qui promet de dépasser largement ces performances. Les alliages Fe-Si-N obtenus par nitruration à 570 °C donnent notamment lieu à des réactions de précipitations inédites. Il a été montré que la phase précipitant au cours de la nitruration est le nitrure stoechiométrique Si3N4. Il se présente sous forme de cuboïdes nanométriques dont la structure est amorphe. L'origine de cette morphologie se trouve dans la minimisation de l'énergie élastique engendrée par la précipitation. Ces précipités entrainent un durcissement considérable de la matrice ferritique et abaisse la densité globale du composite final. Les précipités amorphes sont susceptibles de subir une transition vers le cristal si les alliages nitrurés sont ensuite recuits dans une atmosphère dénitrurante. Les cristallites obtenues se présentent sous forme de prismes hexagonaux et ont une structure appartenant au groupe spatial P62c. La composition Si3N4 reste par contre inchangée. Enfin, il a été démontré que cette transition peut être modélisée à l'aide d'un modèle cinétique de précipitation développé spécifiquement dans ce travail pour prendre en compte les particularités du traitement de nitruration / In the context of ever more stringent environmental regulations, cost-effective weight savings have become a high-priority objective for car makers. Until today, the research effort deployed by steel makers has kept steel in a dominating position on this market against light alloys. However, the performances of current carbon steel grades start to show an asymptotic evolution. Nitrogen steel metallurgy represents a disruptive concept which is bound to outperform by far these current grades. Fe-Si-N alloys obtained through nitriding at 570 °C give rise to unexpected precipitation reactions. It has been shown that the species precipitating during nitriding is the stoichiometric nitride Si3N4. The precipitates display the unusual combination of an amorphous structure with a cuboidal morphology. This morphology can be explained by considering the minimization of the precipitation-induced elastic stress. This precipitation results in substantial hardening of the ferritic matrix and contributes to lowering the density of the final composite. The amorphous precipitates undergo a transition to a crystalline structure when the nitride alloys are subjected to annealing in a denitriding atmosphere. The occurring crystallites precipitate in the form of hexagonal prisms and exhibit a structure belonging to the P62c space group. Their composition however remains Si3N4. Finally, it has been demonstrated that such a transition can be modeled by the means of a kinetic model specifically developed in the present work to account for characteristic aspects of the nitriding treatment

Orientador: Leandro Russovski Tessler / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-09-11T21:07:05Z (GMT). No. of bitstreams: 1 BiggemannTejero_DanielCarlos_D.pdf: 10164089 bytes, checksum: 92ca23a6073fc8197bc0a0519b8227b1 (MD5) Previous issue date: 2005 / Resumo: Nesse trabalho apresentamos o estudo da otimização da fotoluminescência (PL) de filmes finos de a-SiNx:H<Nd> preparados pela técnica de RF co- sputtering. A PL foi estudada em função da concentração de nitrogênio e de neodímio. Foi observado que os íons são excitados através da matriz amorfa. O mecanismo de excitação é mais eficiente em amostras com gap óptico E04 aproximadamente igual ao dobro da transição 4 I 9/2 ® 3 F 3/2 , indicando um processo de excitação dos íons dominantemente via recombinações não-radiativas de elétrons da cauda de banda de condução nas dangling bonds. O modelo mais adequado para descrever a excitação dos íons Nd 3+ é o DRAE (Defect Related Auger Excitation), que foi proposto originalmente para o Er 3+ em a-Si:H. Foi feito um estudo da PL com o tratamento térmico das amostras até temperaturas de 700°C. Os resultados de medidas de micro-Raman e HRTEM (High Resolution Transmission Electron Microscopy) mostram que as mudanças na estrutura dos filmes (presença de nano-cristais de Si e/ou Si3 N4 ) aparecem quando a PL não é mais detectável. Isso implica que o tratamento térmico aumenta a PL principalmente deixando o entorno químico dos íons Nd3+ mais favorável para as transições 4f. Em amostras na geometria de guia de onda planar, fizermos medidas de ganho óptico, tempo de vida da PL em função da temperatura e da potência de excitação. Os resultados mostram ganho óptico no material somente a baixas temperaturas e sob excitações acima de 5 kW/cm 2 . A PL em função da intensidade de excitação apresenta mudança de derivada também acima de 5 kW/cm 2 . Esses resultados permitem considerar o material como promissor para aplicações em amplificadores ópticos integrados / Abstract: In this work, we report a study of the photoluminescence (PL) optimization of a-SiNx:H<Nd> thin films prepared by RF co-sputtering. The PL was investigated as a function of nitrogen and neodymium concentrations. We observed that the Nd ions are excited through the amorphous matrix. The excitation mechanism is more efficient in samples where the optical gap E04 is twice the 4 I 9/2 ® 3 F 3/2 transition of Nd ions, showing an excitation process mostly dominated by non-radiative recombinations of electrons from conduction band tails into dangling bonds. The most adequate model to describe the excitation of Nd 3+ ions is the DRAE model (Defect Related Auger Excitation), originally proposed for Er 3+ in a-Si:H. We study the PL of the samples with thermal annealing at temperatures up to 700°C. Micro Raman and HRTEM (High Resolution Transmission Electron Microscopy) measurements show that small structural changes (presence of Si and/or Si3 N4 nano crystals) appear when no more PL is detectable. This implies that the annealing enhances the PL mainly modifying the chemical neighborhood of the Nd3+ ions to be more favorable for the 4f transitions. In samples with planar waveguide geometry, we performed optical gain measurements, PL lifetime as a function of temperature and excitation power. The results showed optical gain only at low temperatures and under excitation intensities higher than 5 kW/cm 2. The behavior of the PL as a function of excitation intensity shows a change in its derivate also at an excitation power higher than 5 kW/cm 2 . These results allow us to consider this material as promising for applications in integrated optical amplifiers / Doutorado / Física da Matéria Condensada / Doutor em Ciências

Orientador: Leandro Russovski Tessler / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-09-01T20:54:28Z (GMT). No. of bitstreams: 1 Bosco_GiacomoBizinotoFerreira_D.pdf: 9507140 bytes, checksum: 4980b29f48f98f8ff97e8a0a37b7577e (MD5) Previous issue date: 2017 / Resumo: Este trabalho fornece caracterização ótica e estrutural de filmes finos compostos por nitreto de silício amorfo hidrogenado dopado com térbio (a-SiNx:H) ¿ crescidos por deposição química a vapor assistida por plasma gerado através de ressonância ciclotrônica de elétrons (ECR PECVD) e por pulverização catódica reativa em radiofrequência (reactive RF-Sputtering) ¿ com o propósito de avançar a investigação em fabricação de novos materiais e dos mecanismos da emissão de luz de íons de Tb quando diluídos em materiais baseados em silício. A fotoluminescência (PL) atribuída aos filmes de a-SiNx:H foi investigada em termos das condições de deposição e correlacionadas com suas propriedades estruturais e de recozimento pós-deposição. Entre as propriedades caracterizadas estão: estequiometria, taxa de deposição, índice de refração, coeficiente de extinção, bandgap ótico E04, concentração de térbio e vizinhança química presente ao redor de íons Tb3+. Concentrações de Tb da ordem de 1.8 at.% ou 1.4×?10?^21 at/cm^3 foram obtidas em amostras crescidas por Sputtering enquanto que concentrações de 14.0 at.%, ou da ordem ?10?^22 at/cm^3, puderam ser obtidas em amostras crescidas por ECR PECVD. Em Sputtering, a incorporação de Tb varia linearmente com a área recoberta por pastilhas de Tb4O7 em pó, enquanto que em PECVD, a incorporação de Tb é inversamente proporcional e pode ser ajustada sensivelmente pelo fluxo de gás SiH4. Forte emissão de luz, atribuída às transições eletrônicas em Tb3+ (PL do Tb), foi obtida em filmes não-recozidos que possuíam bandgap estequiométrico (E04 = 4.7 ± 0.4 eV and x = 1.5 ± 0.2). Espectros de PL do Tb não mostraram mudanças significativas no formato e na posição dos picos de emissão devido a alterações na temperatura de recozimento, nas condições de deposição ou entre amostras crescidas por diferentes técnicas de deposição. Entretanto, esses parâmetros influenciaram fortemente a intensidade da PL do Tb. Estudos da estrutura fina de absorção de raios-X (XAFS) em filmes crescidos por sputtering mostraram a estabilidade da vizinhança química ao redor dos íons Tb3+ mesmo em altas temperaturas (1100ºC). Investigações por sonda atômica tomográfica (APT) não encontraram formação de nanoclusters envolvendo ou não Tb, mesmo após recozimentos em altas temperaturas. Isso sugere que a excitação de Tb3+ deve ocorrer através da própria matriz hospedeira amorfa e não por mudanças no campo cristalino e, portanto, na força de oscilador das transições eletrônicas do Tb3+. Caracterização da densidade de ligações Si-H por espectroscopia infravermelha a transformada de Fourier (FTIR) em filmes recozidos em diferentes temperaturas foi relacionada com a intensidade da PL do Tb. Ela mostra que um decréscimo na densidade das ligações Si-H, que está relacionada a um aumento na concentração de ligações pendentes de Si (Si-dbs), resulta em filmes com maior intensidade na PL do Tb. Portanto, isso sugere que a excitação de Tb3+ parece acontecer através de transições envolvendo Si-dbs e estados estendidos, o que é consistente com o modelo de excitação Auger por defeitos (DRAE) / Abstract: This work offers optical and structural characterization of terbium (Tb) doped hydrogenated amorphous silicon nitrides thin films (a-SiNx:H) grown by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR PECVD) and reactive RF-Sputtering with the purpose of advancing the investigation in fabrication of novel materials and the mechanisms of light emission of Tb ions when embedded in Si-based materials. Photoluminescence (PL) of a-SiNx:H films were investigated and correlated with the deposition conditions, structural properties, and post-deposition thermal treatments (isochronal annealing under flow of N2). Among the characterized properties are: film stoichiometry, deposition rate, refractive index, extinction coefficient, optical bandgap, terbium concentration, and the chemical neighborhood around Tb ions. Tb concentrations of about 1.8 at.% or 1.4×?10?^21 at/cm^3 have been achieved in Sputtering system while concentrations of 14.0 at.%, or about ?10?^22 at/cm^3, could be achieved in ECR PECVD samples. In Sputtering, Tb incorporation varies linearly with the covered area of the Si target by Tb4O7 powder pellets, while in PECVD, Tb incorporation is inversely proportional to and can be sensitively adjusted through SiH4 gas flow. Bright PL attributed to Tb3+ electronic transitions (Tb PL) were obtained in as-deposited films with stoichiometric bandgaps (E04 = 4.7 ± 0.4 eV and x = 1.5 ± 0.2). The Tb PL spectra did not show any significant change in shape and in PL peak positions due to alterations in annealing temperature, deposition conditions or due to the used deposition method. However, these parameters strongly affected Tb PL intensity. Studies of X-ray absorption fine structure (XAFS) in Sputtering grown films show the stability of the chemical neighborhood around Tb3+ under annealing conditions even after thermal treatments at temperatures as high as 1100ºC. Atom probe tomography (APT) investigation also found no formation of nanoclusters of any type (involving Tb ions or not) after high temperature annealing treatments suggesting that Tb3+ excitation should come from the amorphous host matrix itself and not by changes in crystal field and thus in oscillator strength of Tb3+ electronic transitions. Fourier transform infrared spectroscopy (FTIR) characterization of Si-H bond density in films treated atin different annealing temperatures were crossed correlated with Tb PL intensity. It shows that a decrease in Si-H bond density, related to increase in Si dangling bonds (Si-dbs) concentration, results in greater Tb PL intensity. Thus, it suggests that excitation of Tb3+ happens through transitions involving silicon dangling bonds and extended states, consistent with the defect related Auger excitation model (DRAE) / Doutorado / Física / Doutor em Ciências / 142174/2012-2 / 010308/2014-08 / CNPQ / CAPES

[pt] Pós nanoestruturados de nitreto de silício (Si3N4) foram sintetizados a 300 graus Celsius por precipitação a partir da reação em fase vapor entre o cloreto de silício (SiCl4) e a amônia (NH3). O argônio (Ar) foi utilizado como gás de arraste. Além do pó de nitreto de silício amorfo, o cloreto de amônio sólido (NH4Cl) é formado como subproduto. Os pós Si3N4 quando expostos à atmosfera são facilmente oxidados a oxi-nitreto de silício. As fases cristalinas do Si3N4 foram obtidas por tratamento térmico em uma atmosfera de argônio a 1500 graus Celsius por 2 horas. Caracterizações por Difração de Raios-X e Espectroscopia no Infravermelho com Transformada de Fourier (FTIR) revelaram as fases alfa-Si3N4 e beta-Si3N4, dióxido de silício e oxinitretos de silício. A Microscopia Eletrônica de Varredura por Emissão de Campo (MEV) e Microscopia Eletrônica de Transmissão (MET) mostrara diversas morfologias nas nanoestruturas tais como bastões, cristais facetados, fitas e fios amorfos. O padrão de difração de área selecionada (SADP) indica a natureza cristalina das partículas colunares e as imagens HRTEM revelaram que o espaçamento interplanar da rede é 0,67 nm, que se relaciona com o plano de rede (100) do alfa-Si3N4. A maior superfície específica determinada dos pós, por BET, foi de 96,56m(2)/g. / [en] Nanostructured silicon nitride powders (Si3N4) were synthesized at 300 Celsius degrees by precipitation from the vapor phase reaction between silicon chloride (SiCl4) and ammonia (NH3). Argon (Ar) was used as carrier gas. Solid ammonium chloride (NH4Cl) is formed as by-product, in addition to silicon nitride powder. When exposed to the atmosphere these powders are readily oxidized to silicon oxynitride. Crystalline phases of Si3N4 were obtained by heat treatment in an argon atmosphere at 1500 Celsius degrees for 2 hours. Characterization by X-ray Diffraction and Infrared Spectroscopy with Fourier Transform (FTIR) revealed formation of the alpha-Si3N4 and beta-Si3N4 phases, silicon dioxide and silicon oxynitrides. Field emission scanning electron microscopy (SEM-FEG) and Transmission Electron Microscopy (MET) showed different morphologies such as nano sticks, faceted crystals, ribbons and whiskers. The selected area diffraction pattern (SADP) indicates the crystalline nature of the columnar particles and the HRTEM images reveal that the lattice fringe spacing is 0.67 nm, which match with the (100) plane of alpha-Si3N4. The highest specific surface area of the powders determined, by BET, was 96.56 m(2)/g.

One of the poly-Si thin-film cells developed at the University of New South Wales (UNSW) is the EVA cell. In this work, SiN films for EVA cells as an antireflection/barrier coating were investigated. In addition, the effect of hydrogenation pre-treatment of solid phase crystallisation (SPC) on grain size and open-circuit voltage (Voc) was investigated. The SiN films deposited by PECVD were examined for uniformity of the thickness and the refractive index of the films across the position of the samples in the PECVD deposition system. A spectrophotometric analysis was used to determine these film properties. It was found that these properties were very uniform over the deposition area. Good repeatability of the depositions was also observed. A series of SiN film depositions by reactive sputtering were also performed to optimize the deposition process. Parameters adjusted during the deposition were nitrogen flow rate, substrate bias, and substrate temperature. By investigating the deposition rate, refractive index, and surface roughness of the films, the three deposition parameters were optimised. The effects of post SiN deposition treatments (a-Si deposition, SPC, RTA, and hydrogenation) on thickness and refractive index of both SiN films deposited by PECVD and reactive sputtering were investigated by using samples which have the same structure as the EVA cells. The thickness of the PECVD SiN films decreased about 6 % after all the treatments. On the other hand, the thickness reductions of the reactively sputtered SiN films were very small. The refractive index of the PECVD SiN films increased about 0.6 % after the treatments, whereas that of the reactively sputtered SiN films decreased 1.3 % after the treatments. As a possible method to improve the performance of EVA cells, hydrogenation of a-Si was investigated as a pre-treatment of SPC process. There were no obvious differences in the grainsize and the Voc of the EVA cells with and without the hydrogenation. Therefore it is likely that the hydrogenation pre-treatment of SPC does not have a beneficial effect on the performance of EVA cells.

Abstract not available

The cost of crystalline silicon solar cells must be reduced in order for photovoltaics to be widely accepted as an economically viable means of electricity generation and be used on a larger scale across the world. There are several ways to achieve cost reduction, such as using thinner silicon substrates, lowering the thermal budget of the processes, and improving the efficiency of solar cells. This thesis examines the use of plasma enhanced chemical vapour deposited silicon nitride to address the criteria of cost reduction for n-type crystalline silicon solar cells. It focuses on the surface passivation quality of silicon nitride on n-type silicon, and injection-level dependent lifetime data is used extensively in this thesis to evaluate the surface passivation quality of the silicon nitride films. The thesis covers several aspects, spanning from characterisation and modelling, to process development, to device integration. The thesis begins with a review on the advantages of using n-type silicon for solar cells applications, with some recent efficiency results on n-type silicon solar cells and a review on various interdigitated backside contact structures, and key results of surface passivation for n-type silicon solar cells. It then presents an analysis of the influence of various parasitic effects on lifetime data, highlighting how these parasitic effects could affect the results of experiments that use lifetime data extensively. A plasma enhanced chemical vapour deposition process for depositing silicon nitride films is developed to passivate both diffused and non-diffused surfaces for n-type silicon solar cells application. Photoluminescence imaging, lifetime measurements, and optical microscopy are used to assess the quality of the silicon nitride films. An open circuit voltage of 719 mV is measured on an n-type, 1 Ω.cm, FZ, voltage test structure that has direct passivation by silicon nitride. Dark saturation current densities of 5 to 15 fA/cm2 are achieved on SiN-passivated boron emitters that have sheet resistances ranging from 60 to 240 Ω/□ after thermal annealing. Using the process developed, a more profound study on surface passivation by silicon nitride is conducted, where the relationship between the surface passivation quality and the film composition is investigated. It is demonstrated that the silicon-nitrogen bond density is an important parameter to achieve good surface pas-sivation and thermal stability. With the developed process and deeper understanding on the surface passivation of silicon nitride, attempts of integrating the process into the fab-rication of all-SiN passivated n-type IBC solar cells and laser doped n-type IBC solar cells are presented. Some of the limitations, inter-relationships, requirements, and challenges of novel integration of SiN into these solar cell devices are identified. Finally, a novel metallisation scheme that takes advantages of the different etching and electroless plating properties of different PECVD SiN films is described, and a preliminary evalua-tion is presented. This metallisation scheme increases the metal finger width without increasing the metal contact area with the underlying silicon, and also enables optimal distance between point contacts for point contact solar cells. It is concluded in this thesis that plasma enhanced chemical vapour deposited silicon nitride is well-suited for n-type silicon solar cells.

Spark Plasma Sintering (SPS) is a promising rapid consolidation technique that allows a better understanding and manipulating of sintering kinetics and therefore makes it possible to obtain Si3N4-based ceramics with tailored microstructures, consisting of grains with either equiaxed or elongated morphology. The presence of an extra liquid phase is necessary for forming tough interlocking microstructures in Yb/Y-stabilised α-sialon by HP. The liquid is introduced by a new method, namely by increasing the O/N ratio in the general formula RExSi12-(3x+n)Al3x+nOnN16-n while keeping the cation ratios of RE, Si and Al constant. Monophasic α-sialon ceramics with tailored microstructures, consisting of either fine equiaxed or elongated grains, have been obtained by using SPS, whether or not such an extra liquid phase is involved. The three processes, namely densification, phase transformation and grain growth, which usually occur simultaneously during conventional HP consolidation of Si3N4-based ceramics, have been precisely followed and separately investigated in the SPS process. The enhanced densification is attributed to the non-equilibrium nature of the liquid phase formed during heating. The dominating mechanism during densification is the enhanced grain boundary sliding accompanied by diffusion- and/or reaction-controlled processes. The rapid grain growth is ascribed to a dynamic ripening mechanism based on the formation of a liquid phase that is grossly out of equilibrium, which in turn generates an extra chemical driving force for mass transfer. Monophasic α-sialon ceramics with interlocking microstructures exhibit improved damage tolerance. Y/Yb- stabilised monophasic α-sialon ceramics containing approximately 3 vol% liquid with refined interlocking microstructures have excellent thermal-shock resistance, comparable to the best β-sialon ceramics with 20 vol% additional liquid phase prepared by HP. The obtained sialon ceramics with fine-grained microstructure show formidably improved superplasticity in the presence of an electric field. The compressive strain rate reaches the order of 10-2 s-1 at temperatures above 1500oC, that is, two orders of magnitude higher than that has been realised so far by any other conventional approaches. The high deformation rate recorded in this work opens up possibilities for making ceramic components with complex shapes through super-plastic forming.