A study of the structural and electrical properties of low-temperature-sublimed silicon films indicates that they are characterized by a high density of grain boundaries, hence crystal defects. A trapping model has been proposed to explain the experimentally observed temperature-dependencies of resistivity and carrier concentration of these films. The result shows that the defect density at the grain boundaries is of the order of 10¹² cmˉ², and that it is independent of the doping concentrations in the films. It has been shown that the thin-film metal-insulator-semi-conductor (MIS) structure can be reduced to a transmission line problem by expressing the equivalent capacitance of the structure as a series combination of the depletion capacitance and the insulator capacitance. The variations of both the capacitance and channel conductance of the MIS structure have been utilized to make notch filters in which the notch frequency can be varied over 200% by an external biasing voltage. In view of the need for maintaining a constant null depth in the semiconductor notch filter under various biasing potentials, a new notch network has been proposed in which the optimal notch condition could be maintained simply by designing the ratios of the lengths and widths of the MIS structure to the appropriate values. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate

published_or_final_version / Electrical and Electronic Engineering / Doctoral / Doctor of Philosophy

When the size of display panel increased, the RC delay of TFTs became serious.In order to solve this problem, it is necessary to incorporate a high dielectric (high-k) material used as the gate oxide can increase the gate oxide capacitance Co, which can induce a higher drain current and higher aperture ratio. In this study, titanium silicon oxide films were grown on amorphous silicon and poly-crystal silicon by liquid phase deposition, the addition of NH4OH in the growth solution can control the PH value and prevent the amorphous and poly-crystalline silicon over etching by HF. The physical and chemical properties of titanium silicon oxide film by means of several measuring instruments, including Fourier transform infrared spectrometer (FTIR), and X-Ray diffractometer (XRD). An Al/titanium silicon oxide/a-Si or poly-Si/Si metal-oxide-semiconductor (MOS) capacitor structure was used for the electrical measurements. After oxygen and nitrogen annealing, the leakage current is improved due to the reduction of the oxygen vacancy of titanium silicon oxide film. However, the electrical characteristics can be further improved by the postmetallization annealing treatment especially under the negative electric field. Post-metallization annealing (PMA) is to use the reaction between the aluminum contact and hydroxyl groups existed on oxide surface to form active hydrogen and diffuse through the oxide to passivate the oxide traps. Therefore, titanium silicon oxide film which treated by PMA with higher dielectric constant and lower leakage current can be obtained.

The area of advanced gate dielectrics has gained considerable attention recently because semiconductor technology roadmaps predict for less than 2 nm equivalent oxide thickness (EOT) for next 10 years, and there are significant leakage current and reliability concerns for oxy-nitride in this regime. So it¡¦s an important business to use alternate high-k dielectrics instead of oxy-nitride. Titanium silicon oxide shows a low leakage current with a high dielectric constant for dielectric applications. Besides, barium doping can create additional oxygen vacancies that can enhance dielectric constant. In this study, we prepared barium doped titanium silicon by liquid phase deposition which is a novel material considered to have intermediate properties of silicon dioxide and titanium dioxide. From several characteristic measurements, we found that barium doped titanium silicon oxide with exhibiting higher dielectric constant, low leakage current and well interface state which is very promising candidates to instead of titanium silicon oxide. The physical and chemical properties of barium doped titanium silicon oxide films by means of several measuring instruments, including Fourier transform infrared spectrometer (FTIR), secondary ion spectrometer (SIMS), and X-Ray diffractometer (XRD). An Al / Ba doped titanium silicon oxide / Si metal-oxide-semiconductor (MOS) capacitor structure was used for the electrical measurements. The static dielectric constant of the O2-annealed barium doped titanium silicon oxide film can reach about 22.3. In addition, it has well leakage current density of 2.6 ¡Ñ 10-6 A/cm2 at 5 MV/cm with the equivalent oxide thickness 1.27 nm (optical thickness of 7.3 nm). It has high potential for dielectric applications.

The theme of this thesis is MBE growth of high resistivity semiconductor epi-layers and MBD growth of silicon oxide anti-reflection films. For MBE growth of high resistivity semiconductor epi-layers, In0.523Al0.477As and In0.527Al0.228Ga0.245As lattice matched to InP and grown by MBE at 400¢J has been investigated. We construct n-i-n and p-i-n structure diode models to evidence that the nonlinear I-V characteristics are an intrinsic property of 400¢J In0.523Al0.477As and In0.527Al0.228Ga0.245As, and not due to barriers to current injection at the n+ InGaAs/ high resistivity epi-layer and high resistivity epi-layer/n+ InP heterojunctions. We obtained the effective resistivities of 400¢J In0.523Al0.477As and In0.527Al0.228Ga0.245As at 7V are still more than 109 £[ cm and 107 £[ cm, respectively, in n-i-n structure. They are more than sufficient for most practical applications. For MBD growth of silicon oxide anti-reflection films, we have set up the SiO MBD system in our lab. Then we measured the index of the SiO film that we deposited in the wavelength of 1550nm is about 1.85. Finally, we coated SiO anti-reflection film on one cleaved facet of a Fabry-Perot laser. The reflectance R of the coated facet is reduced to about 1.7¡Ñ10-4 in the vicinity of £f¡×1580 nm.

No description available.

Thesis (Ph. D.)--University of New South Wales, 2002. / Also available online.

Thesis (Ph. D.)--University of North Texas, Dec., 2007. / Title from title page display. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.

Thesis (M.S.)--Oregon State University, 2005. / Printout. Includes bibliographical references (leaves 69-71). Also available online.