Spelling suggestions: "subject:"dpectroscopy THz"" "subject:"espectroscopy THz""
1 |
Terahertz Spectroscopy of Dynamic YBa2Cu3O7-δ Thin FilmsKristoffersen, Anna January 2009 (has links)
<p> The optical properties of high temperature superconductors have long been of interest to condensed matter physicists. The majority of the research has concentrated on the steady-state properties of cuprates. Optical excitation of cuprate superconductors provides the valuable opportunity to study the dynamics of the superconducting state via the evolution of the superconducting condensate and excited quasiparticles. Terahertz (THz) spectroscopy is particularly attractive for the study of thin film cuprates, as the energies available in broad spectrum THz pulses lie below the maximum superconducting gap values. Optical pump THz probe spectroscopy utilizes a high energy infrared pulse to destroy the condensate and excite quasiparticles states out of equilibrium. The THz probe is capable of spectrally resolving the sample's temporal response to the optical perturbation. The direct measurement of both the amplitude and phase of the electric fields associated with the transmitted THz radiation allow for the calculation of both the real and imaginary parts of the conductivity. This offers the tantalizing potential of untangling the condensate's recovery from quasi-particle dynamics.</p> <p> The focus of this thesis will be upon the long timescale dynamics of YBa2Cu3O7-δ (YBCO) thin films. It has generally been believed that the condensate is fully recovered after a few picoseconds, and that the recovery of these films at longer timescales is essentially a thermal process although perhaps slowed by a phonon bottleneck. However, we will show spectral evidence that this picture cannot fully explain long lived dynamics in YBCO thin films. Specifically we see a suppression of the low frequency components of the optical conductivity. This anomaly is consistent with the formation of spatial inhomogeneity in the superconducting fraction, which likely arises from a non-uniform formation of the condensate across the film. The role of local inhomogeneity in the condensate and its effect on the conductivity of the thin film will be discussed. Evidence of intrinsic inhomogeneities in YBCO films may prove useful to the theoretical understanding of condensate dynamics in the cuprates. The spectral response of three doping levels, from optimally doped to underdoped YBCO, will also be shown, with a brief discussion of the normal state dynamics in underdoped films and the possible sensitivity of THz radiation to pseudogap dynamics.</p> / Thesis / Doctor of Philosophy (PhD)
|
2 |
<b>Application of Terahertz Time-Domain Spectroscopy for sub-surface mechanical characterization of polymers</b>Sushrut Karmarkar (19199968) 24 July 2024 (has links)
<p dir="ltr">Terahertz Time Domain Spectroscopy (THz-TDS) is a powerful non-destructive, non-ionizing spectroscopic technique utilized for evaluating the optical properties of materials within the terahertz frequency range, spanning from 0.1 to 10 terahertz or wavelengths of 300 micron to 3000 micron. It effectively bridges the gap between microwave and infrared regions on the electromagnetic spectrum and its high resolution which avoiding scattering can quantify small changes in dielectric properties of media. It has high transmission through visibly opaque polymers and its ability to record both magnitude and phase information makes it a strong spectroscopic technique with applications in security, chemistry, electronics and telecommunication and non-destructive evaluation methods for solid mechanics.</p><p><br></p><p dir="ltr">This work introduces a polarization-dependent analytical model employing THz-TDS for computing strain in materials. The model establishes a correlation between volumetric strain and the change in time of arrival for a THz pulse, leveraging dielectrostrictive properties, variations in doping particle density, and changes in sample thickness due to Poisson’s effects. Validation of the analytical model is achieved through strain mapping of polydimethylsiloxane doped with highly dielectrostrictive strontium titanate (STO). Two experiments, including open-hole tensile and circular edge-notch specimens, demonstrate the efficacy of the model. Additionally, the study accounts for stress relaxation behavior to ensure measurement accuracy. Comparison of THz strain mapping results with finite element model (FEM) and surface strain measurements using digital image correlation (DIC) method highlights the technique's sensitivity to material features such as particle clumping and edge effects, while showcasing strong agreement with FEM and DIC results.</p><p><br></p><p dir="ltr">This analytical model is further expanded for experimentally mapping subsurface stress and strain in the adhesive layer of a single lap shear test. This in-situ non-destructive testing method pioneers the use of THz-TDS for stress estimation in the adhesive layer. Validation through strain mapping of STO doped Araldite 2011 epoxy adhesive with the analytical formulation is presented.</p><p dir="ltr">Finally, THz-TDS is applied for fracture front mapping in a double cantilever beam test with high-density polyethylene bonded with STO doped Araldite 2011. The phase-dependent model for mapping fracture fronts in the sub-surface adhesive layer involves analyzing convoluted waves due to interface resonances in a multi-layer structure using THz-TDS in transmission mode. The technique evaluates changes in dielectrostrictive properties and degree of separation to delineate fracture fronts. THz image enhancement algorithms facilitate crack front delineation. Error analysis on measured crack thickness is conducted to evaluate signal-to-noise ratio for THz-TDS. Additionally, an approach employing THz-TDS measured fracture propagation information for determining sub-surface stress maps in the adhesive layer and computing fracture toughness (G_Ic) is proposed. This work highlights the versatility and efficacy of THz-TDS in material characterization and stress/strain mapping in solid mechanics applications.</p>
|
3 |
Non-linear THz spectroscopy in semiconductor quantum structuresTeich, Martin 26 September 2014 (has links)
In this thesis the strong coupling of excitons with intense THz radiation in GaAs/AlGaAs and InGaAs/GaAs multi-quantum wells (MQW) and the strong coupling of electrons to phonons in InAs/GaAs quantum dots (QD) are investigated. Experimental studies in the field of non-linear terahertz (THz) spectroscopy were carried out using the narrowband THz emission of a free-electron laser (FEL). In the first part intra-excitonic transitions are pumped with intense THz radiation.
The THz-pump–near-infrared(NIR)-probe experiments are analysed focusing on the behaviour of the Autler-Townes (AT) splittings with increasing THz field strength. Furthermore measurements of the temperature dependence up to room temperature are discussed. With the help of a microscopic theory the contribution of higher lying intra-excitonic states to the lineshape and splitting of the heavy-hole absorption line is analysed at low temperatures. The second part is about the lifetime and dephasing time of polarons in InAs/GaAs QDs that was measured for inter-sublevel excitation in the THz spectral region (below the Reststrahlen band). Single electrons inside QDs strongly interact with phonons and form quasi-particles called polarons. The temperature dependence of the dephasing behavior and the contribution of pure dephasing is discussed.:1 Introduction 1
2 Theoretical background 5
2.1 Semiconductor quantum structures 5
2.2 Selection rules for optical excitation 8
2.3 Linewidth of an optical transition 10
2.4 Excitons in a quantum well 10
2.4.1 Excitonic linewidth 13
2.4.2 The concept of exciton-polariton and exciton formation 15
2.5 Electron-phonon interaction in a quantum dot 18
2.5.1 Phonons in GaAs 18
2.5.2 Interaction of electrons with phonons 20
2.5.3 The phonon bottleneck 22
2.5.4 Anharmonicity and LO phonon disintegration 23
2.6 Light-matter interaction 27
2.6.1 The two-level system 27
2.6.2 Autler-Townes splitting 30
2.6.3 Optical Bloch Equations 33
2.6.4 Bloch sphere and photon echo 36
3 Experimental Methods 41
3.1 The Dresden free-electron laser FELBE 41
3.2 THz pump - NIR probe setup 43
3.3 QW samples 47
3.4 THz pump-probe and four-wave mixing setup 50
3.5 Thermally annealed QD samples 50
4 Intra-excitonic Autler-Townes effect in quantum wells 55
4.1 Experimental data 56
4.1.1 Resonant and detuned intra-excitonic excitation 56
4.1.2 Anti-crossing behavior 59
4.1.3 Temperature dependence . 60
4.2 Comparison of experimental data with microscopic theory 63
4.2.1 Exciton linewidth 64
4.2.2 Anti-crossing from microscopic theory 69
4.2.3 Rabi oscillations and polarization redistribution 69
4.3 Summary 72
5 Inter-sublevel coherence in InAs/GaAs quantum dots 73
5.1 Strong electron-phonon coupling 74
5.2 Dephasing above the Restrahlen band 77
5.3 Pump-probe and transient four-wave-mixing measurements below the
Reststrahlenband 80
5.4 Temperature dependence 80
5.5 Summary 84
6 Appendix 85
6.1 Appendix A - Autler-Townes splitting calculated in a three-level configuration 85
6.2 Appendix B - Microscopic theory 88
6.3 Appendix C - Coherent oscillations in the THz pump-probe signal 92
Bibliography 94
|
4 |
Etudes des matériaux, composants et systèmes dans le domaine térahertz par analogie aux méthodes optiques / Study of materials, devices and systems in terahertz domain by analogy with optical methodsPoulin, Cyndie 27 November 2018 (has links)
L’objectif de ma thèse est d’étendre les modèles électromagnétiques existants à l’Institut Fresnel pour les fréquences optiques vers le domaine des fréquences térahertz (THz), pour mieux comprendre les phénomènes physiques mis en jeu lors d’interaction onde-matière. Cette compréhension permettrait d’améliorer l’analyse des images THz acquises et de mieux définir les configurations des systèmes optiques utilisés. Ce travail est réalisé en comparant les résultats issus de la modélisation avec ceux provenant d’expériences menées par imagerie THz au sein de l’entreprise Terahertz Waves Technologies. Dans le futur, la modélisation pourrait devenir un outil prédictif pour la caractérisation de matériaux dans le domaine THz.Les ondes THz se situent entre l’infrarouge lointain et les micro-ondes dans le spectre électromagnétique allant de 0.01 mm à 3 mm (ou 100 GHz à 30 THz). Ces ondes bénéficient des avantages des ondes optiques et des micro-ondes dépendant des longueurs d’ondes utilisées. L’imagerie THz présente un fort potentiel pour la caractérisation de la matière, car ces ondes peuvent pénétrer beaucoup de matériaux qui sont opaques dans le visible et dans l’infrarouge. La détection de défauts, les délaminations, la présence d’humidité, etc…, sont un exemple des problématiques qui peuvent être investiguées grâce au rayonnement THz.Dans un premier temps, j’ai pu simuler la réponse optique d’échantillons polymères plans homogènes et isotropes avec de bons accords entre le calcul et la mesure. Ces résultats ont permis de réaliser de premières modélisations d’images en adéquation avec l’imagerie THz. L’étude est ensuite élargie aux matériaux anisotropes qui existent dans l’environnement industriel actuel ainsi qu’aux objets de forme cylindrique. Les modèles développés considèrent l’indice de réfraction complexe d’un échantillon et son épaisseur, c’est pourquoi un chapitre est dévolu à la méthode d’estimation de ces paramètres à partir de mesures issues de spectroscopie THz dans le domaine temporel mise en œuvre. / The aim of my thesis is to extend the electromagnetic models already existing at the Institut Fresnel for the optical frequencies towards the terahertz (THz) range, to have a better knowledge of the physical phenomena involved in THz light-matter interactions. This understanding would allow to improve the analysis of the THz images acquired and to have a better definition of the optical systems configurations that we use. To achieve this work, we compare the results coming from the model with those from the experiments led by THz imaging by Terahertz Waves Technologies. In the future, the modelling could become a predictive tool for the characterization of materials in the THz domain.THz waves are located between far infrared and microwaves in the electromagnetic spectrum going from 0.01 mm to 3 mm (or 100 GHz to 30 THz). These waves benefit from advantages of the optical waves and from microwaves depending on used frequencies. THz imaging presents a high potential one for the characterization on the material, because these waves can penetrate a lot of materials which are opaque in the visible and the infrared lights. Detection of defects, delaminations, the presence of humidity, etc…, are examples of the problems which can be investigated with THz light.At first, I was able to model the optical response of planar, homogenous, isotropic and polymeric samples with good agreements between the calculation and the measurement. These results allowed to realize first modellings of images which are consistent with THz imaging. Therefore, the study is enlarged to anisotropic materials which exist in the current industrial environment as well as the objects of full cylindrical shape. The developed models consider the complex refractive index of a sample and its thickness, that is why a chapter is devoted to the method of estimation of these parameters from measurements coming from THz Time-Domain Spectrocopy signals which was implemented.
|
5 |
Transitions intersousbandes dans les puits quantiques GaN/AlN du proche infrarouge au THz / Intersubband transitions in the GaN/AlN quantum wells in the near infrared to THz frequencyMachhadani, Houssaine 28 March 2011 (has links)
Les transitions intersousbandes dans les hétérostructures de nitrure d’éléments III ont été intensément étudiées dans le proche infrarouge pour des applications télécoms. L’accordabilité dans le proche infrarouge est rendu possible grâce à la discontinuité de potentiel en bande de conduction qui peut atteindre 1.75 eV pour le système GaN/AlN. Les matériaux nitrures suscitent actuellement un grand intérêt à plus grande longueur d'onde infrarouge. C'est par exemple le développement de détecteurs et d'imageurs rapides à cascade quantique dans la gamme 2-5 µm. C'est aussi l'extension des dispositifs intersousbandes dans le domaine de fréquences THz. Ce travail de thèse porte sur l’étude des transitions intersousbandes dans les puits quantiques GaN/Al(Ga)N épitaxiés par jets moléculaires. Le but est d’accorder ces transitions dans une gamme spectrale très large allant du proche au lointain infrarouge. Je montre que les transitions ISB peuvent être accordées dans la gamme 1-12 µm dans les puits quantiques GaN/AlGaN en phase hexagonale synthétisés selon l'axe polaire c [0001]. Ceci impose l'ingénierie du champ électrique interne, dont la valeur peut atteindre dans le GaN 10 MV/cm. Une solution alternative consiste à utiliser une orientation particulière, dite semipolaire, qui conduit à une réduction du champ électrique interne le long de l'axe de croissance [11-22]. J’ai montré que cette réduction du champ interne permet d’accorder les résonances intersousbandes des puits quantiques GaN/AlN dans le proche infrarouge et j’ai pu estimer le champ en comparant les résultats de spectroscopie et simulations. J’ai d’autre part étudié les propriétés interbandes et intersousbandes des puits quantiques de symétrie cubique, qui par raison de symétrie, ne présentent pas de champ électrique interne. Finalement j’ai mis en évidence les premières transitions intersousbandes aux fréquences THz dans les puits quantiques GaN/AlGaN polaires mais aussi cubiques. / Most of the research on GaN-based intersubband transitions has been focused on near-infrared applications, benefiting from the large conduction band offset between GaN and AlN1.75 eV. Devices such as all-optical switches, electro-optical modulators, quantum cascadedetectors, or light emitters have been demonstrated at short infrared wavelengths. Nitridematerials are currently attracting a great interest at longer infrared wavelengths, for example, forthe development of high-speed quantum cascade detectors and imagers in the range 2-5 µm. Inaddition, there is a great interest to extend the operation of nitride intersubband devices to theTHz frequency range especially for the development of quantum cascade lasers operating at non-cryogenic temperature.This work is focused on the study of intersubband transitions in GaN/Al(Ga)N quantumwells grown by molecular beam epitaxy. The goal is to tune these transitions in a broad spectralrange, from near to far infrared. I show that intersubband transitions may be tuned withinthe range 1-12 µm in the polar GaN/AlGaN quantum wells. This requires the engineering of theinternal electric fields, which can be as high as 10 MV/cm in GaN/AlN quantum wells. Analternative approach is to use a particular orientation, known as semipolar, which leads toa reduction of the internal electric field along the growth axis [11-22]. I show that this reductionof the internal field induces a redshift of the intersubband energy allowing to reach the mid-infrared domain. I was able to estimate the electric field in semi-polar structures by comparingthe results of spectroscopy and simulations. I also investigate interband andintersubband optical properties of cubic GaN/AlN quantum wells, for which the internal field isabsent due to the high symmetry of the cubic crystal. Finally, I report the first observation of theintersubband absorption at terahertz frequencies in polar GaN/AlGaN step quantum wells andin cubic quantum wells.
|
6 |
Conception de tags d'identification sans puce dans le domaineTHz / Study of chipless tag in the THz frequency domainHamdi, Maher 01 October 2014 (has links)
Ce travail de thèse a été réalisé dans le cadre d'un contrat avec l'ANR (ANR-09-VERS-013 « THID ») et porte sur le développement d'une nouvelle génération de tags Chipless à bas coûts fonctionnant dans le domaine THz, pour des applications d'identification et/ou authentification unitaire des articles commerciaux, des papiers d'identités, des personnes pour le contrôle d'accès... Les structures proposées, constituées d'un empilement périodique de couches diélectriques d'indices de réfraction différents, utilisent les propriétés particulières des cristaux photoniques 1D de présenter une réponse électromagnétique entrecoupée de bandes interdites photoniques (BIP). Toute perturbation de la périodicité de la structure engendre des pics dans les bandes interdites qui sont utilisés pour coder une information binaire. Cette structuration particulière des matériaux permet donc de manipuler précisément une signature électromagnétique. Pour des raisons liées à l'industrialisation (facilité de fabrication en masse) et aussi de coût, nous avons retenu des matériaux de base déjà couramment utilisés dans l'industrie papetière : le papier et le polyéthylène. Le choix de ces matériaux, qui doivent allier contraste d'indice élevé et faible absorption, représente une étape cruciale dans ce travail. Ainsi, à partir des résultats expérimentaux obtenus par spectroscopie THz dans le domaine temporel (THz-TDS) sur un grand nombre de matériaux, nous avons pu concevoir deux familles de tags sur la base de ces différents matériaux. Par ailleurs, nous avons développé deux méthodes de codage d'une information binaire, toutes deux basées sur l'absence ou la présence de pics dans une BIP, pics dont la position et le nombre dépendent bien évidemment des défauts de périodicité introduits. Pour des applications liées à l'identification, des capacités de codage de près de 20 bits ont été démontrées. Nous avons aussi montré que la richesse d'information contenue dans la réponse électromagnétique de ces Tags THz peut être utilisée pour les applications liées à l'authentification unitaire, en utilisant comme critère de discrimination le coefficient d'autocorrélation. Nous avons ainsi pu évaluer les performances d'un test d'authentification basé sur ce critère dans différents domaines d'analyse : temporel, fréquentiel et temps-fréquence. Nous avons montré qu'une étude du spectrogramme (combinant temps et fréquence) est ainsi bien plus pertinente qu'une étude dans les seuls domaines temporel ou fréquentiel. / This thesis work deals with the development of a new generation of low-cost Chipless tags operating in the THz frequency domain, it has been supported by the french national agency for research (ANR-09-VERS-013 « THID » ). It covers a wide area of applications such as the identification and/or unitary authentication of commercial items, identity papers, access control…To manufacture these tags, we proposed to use a periodic stack of dielectric material layers with different refractive index and whose thickness is of the order of the wavelength, commonly known as a one dimensional photonic crystal. The electromagnetic signature of such a structure exhibits photonic bandgaps (PBG), i.e. frequency windows in which light propagation is prohibited. We suggested modifying the periodicity of the crystal to create defect levels (peaks) for example in the 1st PBG to encode binary information. This particular structure allows to precisely tuned an electromagnetic signature. To ensure a mass and cost effective industrialization, we retained basic materials which are widely used in the pulp and paper industry: paper and polyethylene. The choice of these materials, which must combine high index contrast and low absorption, represents the first and a crucial step in this work. We characterize a wide range of materials using classical THz time domain spectroscopy (THz-TDS) and we propose two families of tags based on paper and polyethylene. Furthermore, we developed two methods to encode binary information, both based on the absence or presence of peaks in a PBG, peaks whose number and position depend on the introduced defects of periodicity. In a real identification test, a coding capacity of nearly 20-bit has been demonstrated. We also showed that the information contained in the electromagnetic response of these THz tags can be used for other applications related to the unitary authentication and by using the correlation coefficient as criterion for discrimination of the different signatures. Therefore, we evaluate the performance of an authentication test based on this criterion in various analysis domains: time, frequency and time-frequency. We showed that a study of the spectrogram (combining time and frequency representation) is much more relevant than a study in the only time or frequency domain.
|
Page generated in 0.055 seconds