Exciton-polaritons in semiconductor microcavities have been studied intensely, both with respect to their intriguing fundamental physical properties and with respect to their potential in novel device designs. The latter requires ways to control polaritonic systems, and all-optical control mechanisms are considered to be especially useful. In this talk, we discuss and review our efforts to control the polariton density, utilizing optical four-wave mixing instabilites, and the spin or polarization textures resulting from the optical spin Hall effect. Both effects are readily observable in the cavity's far-field emission, and hence potentially useful for optoelectronic and spinoptronic device applications.

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<p> Effects of electron correlations on a two dimensional quantum spin Hall system are studied. We examine possible phases of a generalized Hubbard model on a bilayer honeycomb lattice with a spin-orbit coupling and short range electron-electron repulsions at half filling, based on the slave rotor mean-field theory. The phase diagram of the model is found for a special case where the interlayer Coulomb repulsion is comparable to the intralayer Coulomb repulsion.</p> <p> Besides the conventional quantum spin Hall phase and a broken-symmetry insulating phase, we find a new phase, a fractionalized quantum spin Hall phase, where the quantum spin Hall effect arises for fractionalized spinons which carry only spin but not charge. Experimental manifestations of the exotic phase and effects of fluctuations beyond the saddle point approximation are also discussed.</p> <p> We finally study a toy Bose-Hubbard model for the charge sector of the theory to gain some insight into the phase diagram away from the special Coulomb repulsion values.</p> / Thesis / Master of Science (MSc)

A partir da teoria de resposta linear (formalismo de Kubo) calculamos a condutividade de spin $\\sigma_^$ para um gás bidimensional de elétrons formado num poço quântico com duas subbandas devido a atuação de um novo tipo de interação spin-órbita [Bernardes et al. \\textit{Phys. Rev. Lett.} \\textbf, 076603 (2007) \\& Calsaverini \\textit{et al}. \\textit{Phys. Rev. B} \\textbf, 155313 (2008)]. Este novo termo é não-nulo mesmo em estruturas simétricas e surge devido ao acoplamento entre os estados confinados no poço de paridades diferentes. Encontramos um valor para $\\sigma_^$ não-nulo e não-universal (dependente da intensidade do acoplamento $\\eta$) quando somente uma das subbandas está ocupada, ao contrário de Rashba. Para encontrarmos valores realistas para $\\sigma_^$, determinamos $\\eta$ via cálculo autoconsistente. Esse cálculo é executado para diferentes valores de densidade eletrônica em poços simples e duplos. Obtivemos que $\\sigma_^$ possui um comportamento não-monótono e sofre inversão de sinal como função da energia de Fermi (densidade de elétrons) conforme ela varia entre as duas subbandas. Contudo nossos resultados indicam que a condutividade Hall de spin é muito pequena $\\left(``\\ll \\frac{8\\pi}\"ight)$ nesses sistemas (poços simples e duplos) e possivelmente não mensurável. / Using the Kubo linear response theory, we investigate spin Hall conductivity $\\sigma_^$ in a two-dimensional electron gas in quantum wells with two subbands, when intersubband-induced spin-orbit coupling is operative [Bernardes et al. \\textit{Phys. Rev. Lett.} \\textbf, 076603 (2007) \\& Calsaverini \\textit{et al}. \\textit{Phys. Rev. B} \\textbf, 155313 (2008)]. This new spin-orbit term is non-zero even in symmetric structures and it arises from the distinct parity of the confined states. We find non-zero and non-universal $\\sigma_^$ (dependent on spin-orbit coupling strength $\\eta$) when only one of the subbands is occupied. This is in contrast to the Rashba spin-orbit interaction for which $\\sigma_^$ is identically zero. To obtain realistic values for $\\sigma_^$, we develop a self-consistent scheme to calculate $\\eta$. We performed this calcultion for different values of the eletronic density in single and double wells. We find that $\\sigma_^$ shows a non-monotonic behavior and a sign change as the Fermi energy (carrier density) varies between the two subband edges. However, our results indicate that $\\sigma_^$ is extremely small $\\left(``\\ll \\frac{8\\pi}\"ight)$ and possibly not measurable.

Le domaine de recherche de la spintronique vise a concevoir des dispositifs électroniques misant sur le degré de libre de spin pour transporter de l'information. An d'intégrer ces courants de spin dans des dispositifs électroniques, il est particulièrement intéressant d'étudier l'inter-conversion d'un pur courant de spin en un courant de charge par l'effet Hall de spin, ainsi que le transfert de moment angulaire entre les électrons de conduction d'un métal normal (NM) et l'aimantation d'un ferromagnétique (FM) (couple de transfert de spin / pompage de spin). An de mieux comprendre ces différentes interaction, cette thèse se concentre sur l'étude du système hybride constitué de la juxtaposition d'un ferrimagnétique isolant, le grenat d'yttrium fer (YIG), et d'un métal normal _a fort couplage spin-orbite (Pt ou Ta), nécessaire pour bénéficier de la polarisation en spin de l'interface par un courant électrique dans le plan. Nous avons étudié le pompage de spin et la magnétorésistance produite par l'effet Hall de spin a l'interface entre des bicouches de YIG j Pt et YIG j Ta, et ceci sur des lms étendus de YIG de 200 nm d'épaisseur, produits par épitaxie en phase liquide. Nous observons que la tension électrique, produite par l'effet Hall de spin inverse, change de signe entre du Pt et du Ta confirmant ainsi l'inversion des signes de l'angle de Hall entre ces deux matériaux. En outre, en mesurant la variation de la tension de Hall inverse en fonction de l'épaisseur de la couche de Ta, nous avons réussi à borner la longueur de diffusion de spin dans le Ta. Tant le YIG j Pt et le YIG j Ta affiche une variation semblable de la magnétorésistance a effet Hall de spin en fonction de l'orientation du champ magnétique. Pour étudier l'inuence interfaciale du pompage de spin… / Spintronics aims at designing electronic devices which capitalize on the spin degree of freedom to transport information using spin currents. In order to incorporate spin currents intoelectronic devices, it is particularly interesting to study the interconversion from a spin current, the motion of spin angular momentum, to a charge current (Spin Hall Effect) as well as the transfer of spin angular momentum between the conduction electrons of a normal metal (NM) and the magnetization of a ferromagnet (FM) (Spin Transfer Torque/Spin Pumping). To investigate the interplay of those effects this thesis studies hybrid systems of the ferromagnetic insulator Yttrium Iron Garnet and normal metals with large spin-orbit coupling, a prerequisite for spin Hall e_ect. We study spin pumping and spin hall magnetoresistance in YIGjPt and YIGjTa bi-layers using extended _lms of 200 nm thick YIG, grown by liquid phase epitaxy. The inverse spin Hall voltages in Pt and Ta confirm the opposite signs of spin Hall angles in these two materials. Moreover, from the dependence of the inverse spin Hall voltage on the Ta thickness, we constrain the spin di_usion length in Ta. Both the YIGjPt and YIGjTa systems display a similar variation of resistance upon magnetic eld orientation, the spin Hall magnetoresistance. To study the inuence of interfacial spin pumping and a possible reverse e_ect, it is desirable to work with thin _lm thicknesses. A high quality 20 nm thick YIG _lm was grown by pulsed laser deposition, showing a damping similar to that of bulk YIG. We use nano-lithography to pattern series of YIG(20nm) and YIG(20nm)jPt(13nm) discs with diameters between 300 and 700 nm. The ferromagnetic resonance (FMR) spectra of the individual sub-micron sized samples are recorded through magnetic resonance force microscopy. . Passing dc-current through micron sized YIGjPt disks reveal a variation of the FMR linewidth consistent with the geometry and amplitude of the expected SHE transfer torque. In the absence of exciting microwave _elds, a variation in the magnetization is detected when the dc-current reaches the expected threshold for auto oscillations.

The lateral spatial separation between the circular polarization components of a linearly polarized light beam impinging at off-normal incidence on an air-semiconductor interface is investigated experimentally and theoretically. This fundamental optical phenomenon is referred to as the Spin Hall effect of light (SHEL). An optical pump-probe technique is demonstrated to resolve in situ the nanometer size SHEL displacement of a beam transmitted inside an absorptive material. Three different types of optical interactions in silicon and GaAs demonstrate the technique’s general applicability. First, resonant ∼150 fs pump and probe pulses at λ = 820 nm resolve the SHEL displacement via free-carrier absorption in a 10 μm thick silicon sample. The measured SHEL displacements for a p-polarized probe beam are obtained between −10 to 150 nm as a function of the angle of incidence on the sample. Different angles of incidence are achieved by keeping a fixed angular separation between the pump and the probe beams while rotating the sample about the axis perpendicular to the plane of incidence. In another experiment, an optically thin (500 nm thick) GaAs sample allows one to use Pauli-blocking as an optical interaction to investigate the polarization and angular dependence of the SHEL in the probe beam. For such a polarization-dependent imaging technique, the SHEL displacement in the pump beam also contributes to the measured signal and is evaluated experimentally. A probe beam at normal incidence is used to measure a SHEL displacement of ∼180 nm in a transmitted p-polarized pump beam impinging on the sample with an angle of incidence of 55 degrees. Finally, two-photon absorption is used to resolve the SHEL in a (001) oriented 500 μm thick GaAs wafer using an optical source generating sub-bandgap radiation (λ = 1550 nm) with a pulse duration of 120 fs. Linearly p- and s- co-polarized pump and probe beams are also used to investigate the polarization dependence of the SHEL. All the experimental results obtained using these different optical interactions agree with the theory within the experimental error. Finally, analytical expressions of the shifts experienced by the circular components of a beam impinging at an interface between two optical media are also derived for an incident beam with an arbitrary spatial distribution.

The lateral spatial separation between the circular polarization components of a linearly polarized light beam impinging at off-normal incidence on an air-semiconductor interface is investigated experimentally and theoretically. This fundamental optical phenomenon is referred to as the Spin Hall effect of light (SHEL). An optical pump-probe technique is demonstrated to resolve in situ the nanometer size SHEL displacement of a beam transmitted inside an absorptive material. Three different types of optical interactions in silicon and GaAs demonstrate the technique’s general applicability. First, resonant ∼150 fs pump and probe pulses at λ = 820 nm resolve the SHEL displacement via free-carrier absorption in a 10 μm thick silicon sample. The measured SHEL displacements for a p-polarized probe beam are obtained between −10 to 150 nm as a function of the angle of incidence on the sample. Different angles of incidence are achieved by keeping a fixed angular separation between the pump and the probe beams while rotating the sample about the axis perpendicular to the plane of incidence. In another experiment, an optically thin (500 nm thick) GaAs sample allows one to use Pauli-blocking as an optical interaction to investigate the polarization and angular dependence of the SHEL in the probe beam. For such a polarization-dependent imaging technique, the SHEL displacement in the pump beam also contributes to the measured signal and is evaluated experimentally. A probe beam at normal incidence is used to measure a SHEL displacement of ∼180 nm in a transmitted p-polarized pump beam impinging on the sample with an angle of incidence of 55 degrees. Finally, two-photon absorption is used to resolve the SHEL in a (001) oriented 500 μm thick GaAs wafer using an optical source generating sub-bandgap radiation (λ = 1550 nm) with a pulse duration of 120 fs. Linearly p- and s- co-polarized pump and probe beams are also used to investigate the polarization dependence of the SHEL. All the experimental results obtained using these different optical interactions agree with the theory within the experimental error. Finally, analytical expressions of the shifts experienced by the circular components of a beam impinging at an interface between two optical media are also derived for an incident beam with an arbitrary spatial distribution.

京都大学 / 新制・課程博士 / 博士(工学) / 甲第23907号 / 工博第4994号 / 新制||工||1780(附属図書館) / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 白石 誠司, 教授 竹内 繁樹, 准教授 浅野 卓 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM

Les purs courants de spin peuvent être créés dans des dispositifs latéraux, en utilisant des mesures non-locales dans des vannes de spin latérales, par l’effet Hall de spin ou encore des effets magnétocaloriques. Ils consistent en le flux d'électrons de spin-up dans une direction, et de spin-down dans la direction opposée, de sorte qu’il y ait un flux de moment angulaire sans flux net de charge. Ces propriétés de transport de spin sont étudiés dans des matériaux non-magnétiques, afin de limiter les effets joules ou les effets de champs Oersted, mais surtout pour permettre la création de dispositifs aux nouvelles fonctionnalités et principe de fonctionnement. En outre, l'absorption de courants de spin purs par un élément ferromagnétique est associé au mécanisme de transfert de spin et peuvent exciter des ondes de spin, induire des oscillations magnétiques conduisant à la commutation magnétique. Un sujet relativement indépendant, mais connexe est la manipulation de parois magnétiques (DWS) dans les nanostructures, qui soulève des questions fondamentales liées au mouvement de DW induit par courant, et sous-tend un certain nombre de technologies émergentes. Au cours de cette thèse, l'intention est d'explorer l'interaction entre les DWS et les courants de spin purs. L'idée principale est d'utiliser vannes de spin latérales pour créer et détecter les courants de spin, et des constrictions dans des nanofils de NiFe pour manipuler les DW, nous allons alors montrer comment ceci peut être utilisé pour générer depuis des DWS des courants de spin purs pour détecter efficacement l’effet Hall de spin. Réciproquement, les courants de spin ainsi généré peuvent être utilisés pour détecter très précisément la position ou la configuration micro-magnétique d'un DW. / The bulk effect of the interconversion between charge current and spin current is activated by spin Hall effect (SHE) and its inverse. It is vastly recognized that the SHE originate of the strong spin–orbit coupling in nonmagnetic materials. This thesis is focused on a proposal techniques to characterize SHE and inverse spin Hall effect (ISHE) in the ferromagnetic/nonmagnetic (F/N) nanostructure and electrical detection of magnetic domain walls by using SHE and ISHE. We will briefly give the cornerstones and the basic spintronic concepts, in order to ease the understanding of the work presented in this thesis, and the state-of-the-art of the SHE investigations. In the second part, a technique of F/N nanostructure are proposed and applied to detect the spin Hall angle and spin diffusion length of Pt. Then the technique will be used to characterize the SHE/ISHE in different materials, heavy metal and alloys. The influence of the interfaces in the device will also investigated. In the last of this manuscript, we demonstrate a domain wall (DW) detection method, based on the ability for a ferromagnetic nanowire, in which a DW is pinned, to inject or detect a PSC what can be produced/detected by SHE/ISHE.

A partir da teoria de resposta linear (formalismo de Kubo) calculamos a condutividade de spin $\\sigma_^$ para um gás bidimensional de elétrons formado num poço quântico com duas subbandas devido a atuação de um novo tipo de interação spin-órbita [Bernardes et al. \\textit{Phys. Rev. Lett.} \\textbf, 076603 (2007) \\& Calsaverini \\textit{et al}. \\textit{Phys. Rev. B} \\textbf, 155313 (2008)]. Este novo termo é não-nulo mesmo em estruturas simétricas e surge devido ao acoplamento entre os estados confinados no poço de paridades diferentes. Encontramos um valor para $\\sigma_^$ não-nulo e não-universal (dependente da intensidade do acoplamento $\\eta$) quando somente uma das subbandas está ocupada, ao contrário de Rashba. Para encontrarmos valores realistas para $\\sigma_^$, determinamos $\\eta$ via cálculo autoconsistente. Esse cálculo é executado para diferentes valores de densidade eletrônica em poços simples e duplos. Obtivemos que $\\sigma_^$ possui um comportamento não-monótono e sofre inversão de sinal como função da energia de Fermi (densidade de elétrons) conforme ela varia entre as duas subbandas. Contudo nossos resultados indicam que a condutividade Hall de spin é muito pequena $\\left(``\\ll \\frac{8\\pi}\"ight)$ nesses sistemas (poços simples e duplos) e possivelmente não mensurável. / Using the Kubo linear response theory, we investigate spin Hall conductivity $\\sigma_^$ in a two-dimensional electron gas in quantum wells with two subbands, when intersubband-induced spin-orbit coupling is operative [Bernardes et al. \\textit{Phys. Rev. Lett.} \\textbf, 076603 (2007) \\& Calsaverini \\textit{et al}. \\textit{Phys. Rev. B} \\textbf, 155313 (2008)]. This new spin-orbit term is non-zero even in symmetric structures and it arises from the distinct parity of the confined states. We find non-zero and non-universal $\\sigma_^$ (dependent on spin-orbit coupling strength $\\eta$) when only one of the subbands is occupied. This is in contrast to the Rashba spin-orbit interaction for which $\\sigma_^$ is identically zero. To obtain realistic values for $\\sigma_^$, we develop a self-consistent scheme to calculate $\\eta$. We performed this calcultion for different values of the eletronic density in single and double wells. We find that $\\sigma_^$ shows a non-monotonic behavior and a sign change as the Fermi energy (carrier density) varies between the two subband edges. However, our results indicate that $\\sigma_^$ is extremely small $\\left(``\\ll \\frac{8\\pi}\"ight)$ and possibly not measurable.